2SK2645-01MR FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

FAP-2S Series Outline Drawings
TO-220F

Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

Equivalent circuit schematic
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain(D)
Drain-source voltage V DS 600 V
Continuous drain current ID ±9 A
Pulsed drain current ID(puls] ±32 A
Gate-source voltage VGS ±35 V
Repetitive or non-repetitive IAR *2 9 A Gate(G)
Maximum Avalanche Energy EAS *1 71.9 mJ Source(S)
Max. power dissipation PD 50 W
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
*1 L=1.63mH, Vcc=60V <
*2 Tch=150°C

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID=1mA VGS=0V 600 V
Gate threshold voltage VGS(th) ID=1mA VDS=VGS 3.5 4.0 4.5 V
VDS=600V Tch=25°C 10 500 µA
Zero gate voltage drain current IDSS
VGS=0V Tch=125°C 0.2 1.0 mA
Gate-source leakage current IGSS VGS=±35V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=4.5A VGS=10V 1.0 1.2 Ω
Forward transcondutance gfs ID=4.5A VDS=25V 2.5 5.0 S
Input capacitance Ciss VDS =25V 900 1400 pF
Output capacitance Coss VGS=0V 150 230
Reverse transfer capacitance Crss f=1MHz 70 110
Turn-on time ton td(on) VCC=300V ID=9A 25 40 ns
tr VGS=10V 70 110
Turn-off time toff td(off) RGS=10 Ω 60 90
tf 35 60
Avalanche capability IAV L=100 µH Tch=25°C 9 A
Diode forward on-voltage V SD IF=2xIDR VGS=0V Tch=25°C 1.0 1.5 V
Reverse recovery time t rr IF=IDR VGS=0V 550 ns
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 7.0 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 2.5 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 62.5 °C/W

1
2SK2645-01MR FUJI POWER MOSFET
Characteristics

Power Dissipation Safe operating area

PD=f(Tc) ID=f(VDS):D=0.01,Tc=25°C
70

60
1
10 t=0.01 µ s
50 DC
1µs
10 µ s
PD [W]

40 100 µ s
0

ID [A]
10
1ms
30

10ms
20 -1
10 t
t 100ms
D=
T
10
T

-2
0 10
0 50 100 150 10
0
10
1
10
2
10
3

o
Tc [ C] VDS [V]

Typical output characteristics Typical transfer characteristic

ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C
20

VGS=20V
10V 1
10
15 8V
ID [A]

0
10
ID [A]

10
7V

6.5V -1
5 10

6V

5.5V
0 5V -2
10
0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10

VDS [V] VGS [V]

Typical forward transconductance Typical drain-source on-state resistance

RDS(on)=f(ID):80µs Pulse test, Tch=25°C
gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C
9 VGS=
5V
5.5V 6V 6.5V 7V
8

7
1
10
6
RDS(on) [ Ω ]

5
gfs [s]

4
0
10 3

8V
2 10V
20V
1

-1 0
10 -1 0 1
0 5 10 15 20
10 10 10
ID [A] ID [A]

2
2SK2645-01MR FUJI POWER MOSFET

Drain-source on-state resistance Gate threshold voltage

RDS(on)=f(Tch):ID=4.5A,VGS=10V VGS(th)=f(Tch):ID=1mA,VDS=VGS
4.0 6.0

3.5
5.0
3.0
max.
4.0
2.5 typ.

VGS(th) [V]
RDS(on) [ Ω ]

min.
2.0 max. 3.0

1.5
typ.
2.0
1.0

1.0
0.5

0.0 0.0
-50 0 50 100 150 -50 0 50 100 150
o
o Tch [ C]
Tch [ C]

Typical gate charge characteristic Typical capacitances

VGS=f(Qg):ID=9A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
500 50 10n
Vcc=480V
450 45

400 40

350 0V 35
12 1n Ciss
c= V
300V Vc 300 V
300 0 30
VDS [V]

48
VGS [V]

C [F]

250 25

200 20 Coss
100p
150 15
120V Crss
100 10

50 5

0 0 10p -2 -1 0 1 2
0 20 40 60 80 100 120 140 10 10 10 10 10

Qg [nC] VDS [V]

Forward characteristic of reverse of diode Avalanche energy derating

IF=f(VSD):80µs Pulse test,VGS=0V Eas=f(starting Tch):Vcc=60V,IAV=9A
100

1
10 80

o
Tch=25 C typ.

60
Eas [mJ]

0
IF [A]

10

40

-1
10
20

10
-2 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150
o
VSD [V] Starting Tch [ C]

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2SK2645-01MR FUJI POWER MOSFET

Transient thermal impedande

1
Zthch=f(t) parameter:D=t/T
10

D=0.5
0
10
0.2
Zthch-c [K/W]

0.1
0.05

10 0.02
-1
t
t
D=
T
0.01 T

0
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t [s]