2SK2642-01MR FUJI POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Features TO-220F15

High speed switching

Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±35V Guarantee
Avalanche-proof
2.54

Applications
Switching regulators 3. Source

UPS
DC-DC converters Equivalent circuit schematic
General purpose power amplifier
Drain(D)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Rating Unit
Drain-source voltage V DS 500 V Gate(G)
Continuous drain current ID ±15 A Source(S)
Pulsed drain current ID(puls] ±60 A
Gate-source voltage VGS ±35 V
Maximum Avalanche Energy EAV *1 88.7 mJ
Max. power dissipation PD 50 W
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
*1 L=0.72mH, Vcc=50V

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID=1mA VGS=0V 500 V
Gate threshold voltage VGS(th) ID=1mA VDS=VGS 3.5 4.0 4.5 V
VDS=500V Tch=25°C 10 500 µA
Zero gate voltage drain current IDSS
VGS=0V Tch=125°C 0.2 1.0 mA
Gate-source leakage current IGSS VGS=±35V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=7.5A VGS=10V 0.44 0.55 Ω
Forward transcondutance gfs ID=7.5A VDS=25V 4.5 9.0 S
Input capacitance Ciss VDS =25V 1400 2100
Output capacitance Coss VGS=0V 250 380 pF
Reverse transfer capacitance Crss f=1MHz 110 170
Turn-on time ton td(on) VCC=300V ID=15A 30 50
tr VGS=10V 110 170
Turn-off time toff td(off) RGS=10 Ω 90 140 ns
tf 55 90
Avalanche capability IAV L=100µH Tch=25°C 15 A
Diode forward on-voltage V SD IF=2xID VGS=0V Tch=25°C 1.1 1.65 V
Reverse recovery time trr IF=ID VGS=0V 500 ns
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 8.0 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 2.50 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 62.5 °C/W

1
FUJI POWER MOSFET 2SK2642-01MR

Characteristics
Typical output characteristics
o
Drain-source on-state resistance
ID=f(VDS):80µs pulse test,Tc=25 C RDS(on)=f(Tch):ID=7.5A,VGS=10V
40 2.0

VGS=20V
35
10V

30 1.5

8V
25

RDS(on) [ Ω ]
ID [A]

20 1.0 max.

7V
15
typ.
6.5V
10 0.5

6V
5

5.5V

0 5V 0.0
0 5 10 15 20 25 30 35 -50 0 50 100 150

VDS [V] Tch [ C]

o

Typical transfer characteristic Typical drain-source on-state resistance

o
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25 C
o RDS(on)=f(ID):80 µs pulse test, Tc=25 C
4.0
VGS=
5V 5.5V 6.5V
6V 7V
3.5
1
10
3.0

2.5
RDS(on) [ Ω]
ID [A]

0
10
2.0

1.5

-1
10 1.0

0.5

10
-2 0.0
0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25

VGS [ V ] ID [ A ]

Typical forward transconductance Gate threshold voltage

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 C
o VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0

5.0

1
10 max.

4.0
typ.
VGS(th) [V]

min.
gfs [s]

3.0

0
10
2.0

1.0

0.0
-1
10 10-1 0 1 -50 0 50 100 150
10 10
o
ID [A] Tch [ C ]

2
 FUJI POWER MOSFET 2SK2642-01MR

Typical gate charge characteristic

Typical capacitances o
C=f(VDS):VGS=0V,f=1MHz VGS=f(Qg):ID=15A,Tc=25 C
400 40
10n
Vcc=400V

0V 35
350 10
c= V
Vc 250 V
0
40
300 30
Ciss
1n
250 25
250V

VGS [V]
VDS [V]
C [F]

200 20

Coss

150 15

100p Crss
100V 10
100

50 5

0 0
10p -2 -1 0 1 2 0 20 40 60 80 100 120 140 160 180
10 10 10 10 10
Qg [nC]
VDS [V]

Forward characteristic of reverse of diode Power Dissipation

IF=f(VSD):80 µs pules test,VGS=0V PD=f(Tc)
70

60
1
10

o
Tch=25 C typ. 50

0
40
IF [A]

10
PD [W]

30

-1
10 20

10

-2
10 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150
o
VSD [V] Tc [ C ]

Safe operating area

o
ID=f(VDS):D=0.01,Tc=25 C
Transient thermal impedande 10
2

Zthch=f(t) parameter:D=t/T
1
10

1
10 t=0.01µs
DC 1µs
0.5
10µs
0
10
0.2 100µs
ID [A]
Zthch-c [K/W]

0
10
0.1 1ms
0.05

10ms
10
-1 0.02
-1
10 100ms

0.01

-2
10 -2
-5 -4 -3 -2 -1 0 1 10 0 1 2 3
10 10 10 10 10 10 10 10 10 10 10

t [s] VDS [V]

3
FUJI POWER MOSFET 2SK2642-01MR

Avalanche energy derating

Eas=f(starting Tch):Vcc=50V,IAV=15A
100

80

60
Eas [mJ]

40

20

0
0 50 100 150
o
Starting Tch [ C ]