IRFP460: 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features
IRFP460: 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features
IRFP460: 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 125oC.
S
Thermal Resistance Junction to Case RθJC - - 0.50 oC/W
S
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13) - - 1.8 V
Reverse Recovery Time trr TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 280 580 1200 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 21A, dISD/dt = 100A/µs 3.8 8.1 18 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25Ω, Peak IAS = 20A.
1.2 20
POWER DISSIPATION MULTIPLIER
1.0
16
ID, DRAIN CURRENT (A)
0.8
12
0.6
8
0.4
4
0.2
0 0
0 50 100 150 25 50 75 100 125 150
TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE
1
ZθJC, THERMAL IMPEDANCE (oC/W)
0.5
0.1 0.2
0.1
0.05 PDM
0.02
10-2 0.01
t1
SINGLE PULSE t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-5 10-4 10-3 10-2 0.1 1 10
t1, RECTANGULAR PULSE DURATION (S)
103 40
VGS = 10V PULSE DURATION = 80µs
5 OPERATION IN THIS
AREA IS LIMITED DUTY CYCLE = 0.5% MAX
VGS = 6.0V
2 BY rDS(ON)
32
ID , DRAIN CURRENT (A)
40 102
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
VGS = 6.0V VDS ≥ 50V
32 VGS = 10V
ID , DRAIN CURRENT (A)
24
TJ = 150oC
1
16 VGS = 5.0V TJ = 25oC
8 0.1
VGS = 4.5V
VGS = 4.0V
0 10-2
0 4 8 12 16 20 0 2 4 6 8 10
VDS , DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)
2.5 3.0
PULSE DURATION = 80µs PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
2.0 2.4
ON RESISTANCE (Ω)
ON RESISTANCE
VGS = 10V
1.5 1.8
1.0 1.2
0.5 0.6
VGS = 20V
0 0
0 20 40 60 80 100 -40 0 40 80 120 160
ID, DRAIN CURRENT (A) TJ , JUNCTION TEMPERATURE (oC)
1.25 10000
ID = 250µA VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE
C, CAPACITANCE (pF)
CISS
1.05 6000
COSS
0.95 4000
0.85
2000 CRSS
0.75
-40 0 40 80 120 160 0
1 2 5 10 2 5 102
TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
40 102
PULSE DURATION = 80µs PULSE DURATION = 80µs
ISD, SOURCE TO DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX 5 DUTY CYCLE = 0.5% MAX
gfs, TRANSCONDUCTANCE (S)
VDS ≥ 50V
32
2
TJ = 25oC 10
24
5 TJ = 150oC
TJ = 25oC
2
16
1
TJ = 150oC
5
8
2
0 0.1
0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0
ID , DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 21A
VDS = 400V
16
VGS, GATE TO SOURCE (V)
VDS = 250V
VDS = 100V
12
0
0 40 80 120 160 200
Qg, GATE CHARGE (nC)
VDS
BVDSS
L tP
VDS
tP
0V IAS
0
0.01Ω
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON tOFF
td(ON) td(OFF)
tr tf
RL VDS
90% 90%
+
VDD 10% 10%
RG
- 0
DUT 90%
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
CURRENT (ISOLATED
REGULATOR SUPPLY) VDD
Qg(TOT)
SAME TYPE VGS
AS DUT Qgd
12V
0.2µF 50kΩ
BATTERY Qgs
0.3µF
D VDS
G DUT 0
IG(REF) S IG(REF)
0
VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING 0
RESISTOR RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H4