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    SBR 13003 D

    Uploaded by

    Hendri eka fauzi
    This document provides information on a high voltage, high speed NPN power transistor. It details features, general description, maximum ratings, electrical characteristics, switching test circuits, package dimensions, and includes figures related to DC current gain, saturation voltage, switching time, and safe operation area.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    SBR 13003 D

    Uploaded by

    Hendri eka fauzi
    64 views5 pages
    This document provides information on a high voltage, high speed NPN power transistor. It details features, general description, maximum ratings, electrical characteristics, switching test circuits, package dimensions, and includes figures related to DC current gain, saturation voltage, switching time, and safe operation area.

    Original Description:

    Sbr 1300

    Original Title

    sbr13003d

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    © © All Rights Reserved

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    This document provides information on a high voltage, high speed NPN power transistor. It details features, general description, maximum ratings, electrical characteristics, switching test circuits, package dimensions, and includes figures related to DC current gain, saturation voltage, switching time, and safe operation area.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    64 views5 pages

    SBR 13003 D

    Uploaded by

    Hendri eka fauzi
    This document provides information on a high voltage, high speed NPN power transistor. It details features, general description, maximum ratings, electrical characteristics, switching test circuits, package dimensions, and includes figures related to DC current gain, saturation voltage, switching time, and safe operation area.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    SBR13003D

    130
    olttage Fast
    High Vol -Sw
    -Swiitch
    st-Sw chiing NPN Power Transis
    NPN isttor

    Fea
    eattur
    urees
    ◆ Very High Switching Speed
    ◆ High Voltage Capability
    ◆ Wide Reverse Bias SOA
    ◆ Built-in freewheeling diode

    escrrip
    General Desc ipttion
    This Device is designed for high voltage, High speed
    switching characteristics required such as lighting system,
    switching mode power supply.

    axiimum Rati
    Absolute Max ngs
    tin
    Symbol ametter
    Parame Test Conditions
    Conditio Value Units
    VCES Collector-Emitter Voltage VBE = 0 700 V

    VCEO Collector-Emitter Voltage IB = 0 400 V


    VEBO Emitter-Base Voltage IC = 0 9.0 V
    IC Collector Current 1.5 A
    ICP Collector pulse Current 3.0 A
    IB Base Current 0.75 A
    IBM Base Peak Current tP = 5ms 1.5 A
    Total Dissipation at Tc = 25℃ 40
    PC W
    Total Dissipation at Ta = 25℃ 1.2
    TJ Operation Junction Temperature - 40 ~ 150 ℃

    TSTG Storage Temperature - 40 ~ 150 ℃

    Thermal Characteristics
    Symbol ametter
    Parame Value Units
    RθJc Thermal Resistance Junction to Case 3.12 ℃/W
    RθJA Thermal Resistance Junction to Ambient 89 ℃/W

    Jan 2009.Rev.0
    Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
    SBR13
    130003D
    ecttrical Ch
    Elec arac
    Cha actteristics (TC=25℃ unless otherwise noted)

    Value
    Symbol ametter
    Parame estt Conditio
    Tes ns
    Condition Units
    Min Typ Ma
    Maxx

    BVCBBO Collector-Base Breakdown Voltage Ic=0.5mA,Ie=0 700 V

    BVCEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V

    VCE(sat) Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.6 V

    VBE(sat) Base-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.2 V

    ICBO Collector-Base Cutoff Current Vcb=550V,Ie=0mA - - 10 μA

    ICEO Collector-Emitter Cutoff Current Vce=400V,Ib=0mA - - 20 μA

    IEBO Emitter- Base Cutoff Current Veb=9V,Ic=0mA - - 20 μA

    Vce=20V,Ic=20mA 10 - 40
    hFE DC Current Gain
    Vce=5V, Ic=1mA 9 - -

    ts Storage Time VCC=250V - - 3


    ㎲
    tf Fall Time IC=5 IB - - 0.8
    IB1=- IB2=0.04A

    Not
    Notee:
    Pulse Test : Pulse width 300, Duty cycle 2%

    2/5
    .
    Steady, keep you advance
    SBR13003D
    130

    Fig. 1 DC Current Gain Fig. 2 Saturation Voltage

    Fig. 3 Switching Time Fig. 4 Safe Operation Area

    Fig.5 Power Derating

    3/5
    Steady, keep you advance
    SBR13
    130003D

    ivee Load Switch


    Resistiv tchiing Test Circuit
    rcu

    Ind uct
    nduct ive Load Swi
    uctive tc
    witc hing & RBS
    tch OA Test Ci
    BSOA Cirrcuit

    4/5
    .
    Steady, keep you advance
    SBR13
    130003D

    TO-126 Packa
    O-126 ackagge Di
    Dimmensi
    sioon

    5/5
    Steady, keep you advance

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