BF970

BF970
Vishay Telefunken
Silicon PNP Planar RF Transistor

Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF oscillator and mixer stages.
Features
D High gain
D Low noise
94 9308 13623
1
BF970 Marking: BF970
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings

Tamb = 25_C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Collector-base voltage –VCBO 40 V
Collector-emitter voltage –VCEO 35 V
Emitter-base voltage –VEBO 3 V
Collector current –IC 30 mA
Total power dissipation Tamb ≤ 60 °C Ptot 300 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg –55 to +150 °C
Maximum Thermal Resistance

Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 RthJA 300 K/W
plated with 35mm Cu
Document Number 85005 www.vishay.de • FaxBack +1-408-970-5600

Rev. 3, 20-Jan-99 1 (5)
BF970
Vishay Telefunken
Electrical DC Characteristics
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current –VCE = 40 V, VBE = 0 –ICES 100 mA
Collector-base cut-off current –VCB = 20 V, IE = 0 –ICBO 100 nA
Emitter-base cut-off current –VEB = 2 V, IC = 0 –IEBO 10 mA
Collector-emitter breakdown voltage –IC = 1 mA, IB = 0 –V(BR)CEO 35 V
DC forward current transfer ratio –VCE = 10 V, –IC = 3 mA hFE 25 50 90
Electrical AC Characteristics
Parameter Test Conditions Sym- Min Typ Max Unit

bol
Transition frequency –VCE = 10 V, –IC = 3 mA, f = 300 MHz fT 1000 MHz
Collector-base capacitance –VCB = 10 V, f = 1 MHz Ccb 0.4 pF
Noise figure –VCE = 10 V, –IC = 3 mA, ZS = 50 W, F 4.2 5.0 dB
f = 800 MHz
Power gain –VCE = 10 V, –IC = 3 mA, ZL = 500 W, Gpb 13 14.5 dB
f = 800 MHz
Collector current for Gpbmax –VCE = 10 V, ZL = 500 W, f = 800 MHz –IC 5 mA
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85005

2 (5) Rev. 3, 20-Jan-99
BF970
Vishay Telefunken
Typical Characteristics (Tamb = 25_C unless otherwise specified)
400 1.0
CCB – Collector Base Capacitance ( pF )

P tot – Total Power Dissipation ( mW )
350 0.9
0.8
300
0.7
250 0.6
200 0.5
150 0.4
0.3
100
0.2
50 0.1
0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20
12845 Tamb – Ambient Temperature ( °C ) 12846 VCB – Collector Base Voltage ( V )
Figure 1. Total Power Dissipation vs. Figure 3. Collector Base Capacitance vs.
Ambient Temperature Collector Base Voltage
1200
f T – Transition Frequency ( MHz )
1000
800
600
400
–VCB=10V
200 f=300MHz
0
0 3 6 9 12 15
12847 –IC – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current

Rev. 3, 20-Jan-99 3 (5)
BF970
Vishay Telefunken
Dimensions of BF970 in mm
96 12243
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85005

4 (5) Rev. 3, 20-Jan-99
BF970
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Rev. 3, 20-Jan-99 5 (5)

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BF970

Silicon PNP Planar RF Transistor

Absolute Maximum Ratings

Maximum Thermal Resistance

Document Number 85005 www.vishay.de • FaxBack +1-408-970-5600

Parameter Test Conditions Sym- Min Typ Max Unit

www.vishay.de • FaxBack +1-408-970-5600 Document Number 85005

CCB – Collector Base Capacitance ( pF )

Figure 2. Transition Frequency vs. Collector Current

Document Number 85005 www.vishay.de • FaxBack +1-408-970-5600

www.vishay.de • FaxBack +1-408-970-5600 Document Number 85005

It is the policy of Vishay Semiconductor GmbH to

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 85005 www.vishay.de • FaxBack +1-408-970-5600

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