BZT03C...

TELEFUNKEN Semiconductors

Silicon Z–Diodes

Features

Glass passivated junction

Hermetically sealed package

Clamping time in picoseconds

Applications
Medium power voltage regulators and medium
power transient suppression circuits
94 9539

Absolute Maximum Ratings

Tj = 25C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation
p l=10mm, TL=25
C PV 3.25 W
Tamb=25
C PV 1.3 W
Repetitive peak reverse power PZRM 10 W
dissipation
Non repetitive peak surge power tp=100
s, Tj=25
C PZSM 600 W
dissipation
Junction temperature Tj 175
C
Storage temperature range Tstg –65...+175
C

Maximum Thermal Resistance

Tj = 25C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant RthJA 46 K/W
on PC board with spacing 25mm RthJA 100 K/W

Characteristics
Tj = 25C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=0.5A VF 1.2 V

Rev. A1: 12.12.1994 1

 BZT03C... TELEFUNKEN Semiconductors

Characteristics when used as voltage regultor diodes, Tj = 25°C

Type VZ rzj and TKV Z at IZ IR at VR
V W %/K mA mA
BZT03C
BZT03C...
Min. Typ. Max. Typ. Max. Min. Max. Max.
6V2 5.8 6.2 6.6 1 2 0 0.07 100 1500 4.7
6V8 6.4 6.8 7.2 1 2 0 0.07 100 1000 5.1
7V5 7.0 7.5 7.9 1 2 0 0.07 100 750 5.6
8V2 7.7 8.2 8.7 1 2 0.03 0.08 100 600 6.2
9V1 8.5 9.1 9.6 2 4 0.03 0.08 50 20 6.8
10 9.4 10 10.6 2 4 0.05 0.09 50 10 7.5
11 10.4 10 11.6 4 7 0.05 0.10 50 4 8.2
12 11.4 12 12.7 4 7 0.05 0.10 50 3 9.1
13 12.4 13 14.1 5 10 0.05 0.10 50 2 10
15 13.8 15 15.6 5 10 0.05 0.10 50 1 11
16 15.3 16 17.1 6 15 0.06 0.11 25 1 12
18 16.8 18 19.1 6 15 0.06 0.11 25 1 13
20 18.8 20 21.2 6 15 0.06 0.11 25 1 15
22 20.8 22 23.3 6 15 0.06 0.11 25 1 16
24 22.8 24 25.6 7 15 0.06 0.11 25 1 18
27 25.1 27 28.9 7 15 0.06 0.11 25 1 20
30 28 30 32 8 15 0.06 0.11 25 1 22
33 31 33 35 8 15 0.06 0.11 25 1 24
36 34 36 38 21 40 0.06 0.11 10 1 27
39 37 39 41 21 40 0.06 0.11 10 1 30
43 40 43 46 24 45 0.07 0.12 10 1 33
47 44 47 50 24 45 0.07 0.12 10 1 36
51 48 51 54 25 60 0.07 0.12 10 1 39
56 52 56 60 25 60 0.07 0.12 10 1 43
62 58 62 66 25 80 0.08 0.13 10 1 47
68 64 68 72 25 80 0.08 0.13 10 1 51
75 70 75 79 30 100 0.08 0.13 10 1 56
82 77 82 87 30 100 0.08 0.13 10 1 62
91 85 91 96 60 200 0.09 0.13 5 1 68
100 94 100 106 60 200 0.09 0.13 5 1 75
110 104 110 116 80 250 0.09 0.13 5 1 82
120 114 120 127 80 250 0.09 0.13 5 1 91
130 124 130 141 110 300 0.09 0.13 5 1 100
150 138 150 156 130 300 0.09 0.13 5 1 110

2 Rev. A1: 12.12.1994

 BZT03C...
TELEFUNKEN Semiconductors

Type VZ rzj and TKVZ at IZ IR at VR

V W %/K mA mA
BZT03C
BZT03C...
Min. Typ. Max. Typ. Max. Min. Max. Max.
160 153 160 171 150 350 0.09 0.13 5 1 120
180 168 180 191 180 400 0.09 0.13 5 1 130
200 188 200 212 200 500 0.09 0.13 5 1 150
220 208 220 233 350 750 0.09 0.13 2 1 160
240 228 240 256 400 850 0.09 0.13 2 1 180
270 251 270 289 450 1000 0.09 0.13 2 1 200

Rev. A1: 12.12.1994 3

 BZT03C... TELEFUNKEN Semiconductors

Characteristics when used as transient suppressor diodes, Tj = 25°C

Type Clamping Stand-off
V(CL)R 1) at IRSM IR at VR 2)
BZT03C... V A
A V
Max. Max.
6V2 9.3 34.0 3000 5.1
6V8 10.2 31.0 2000 5.6
7V5 11.3 26.5 1500 6.2
8V2 12.3 24.4 1200 6.8
9V1 13.3 22.7 50 7.5
10 14.8 20.3 20 8.2
11 15.7 19.1 5 9.1
12 17.0 17.7 5 10
13 18.9 15.9 5 11
15 20.9 14.4 5 12
16 22.9 13.1 5 13
18 25.6 11.7 5 15
20 28.4 10.6 5 16
22 31.0 9.7 5 18
24 33.8 8.9 5 20
27 38.1 7.9 5 22
30 42.2 7.1 5 24
33 46.2 6.5 5 27
36 50.1 6.0 5 30
39 54.1 5.5 5 33
43 60.7 4.9 5 36
47 65.5 4.6 5 39
51 70.8 4.2 5 43
56 78.6 3.8 5 47
62 86.5 3.5 5 51
68 94.4 3.2 5 56
75 103.5 2.9 5 62
82 114 2.6 5 68
91 126 2.4 5 75
100 139 2.2 5 82
110 152 2.0 5 91
120 167 1.8 5 100
130 185 1.6 5 110
150 204 1.5 5 120
160 224 1.3 5 130

4 Rev. A1: 12.12.1994

 BZT03C...
TELEFUNKEN Semiconductors

Type Clamping Stand-off

V(CL)R 1) at IRSM IR at VR 2)
BZT03C... V A
A V
Max. Max.
180 249 1.2 5 150
200 276 1.1 5 160
220 305 1.0 5 180
240 336 0.9 5 200
270 380 0.8 5 220
1) 10/1000 exp. falling pulse tp = 1000
s down to 50% 2) Stand-off voltage = recommended supply voltage
Typical Characteristics (Tj = 25
C unless otherwise specified)
50 3 4
l l

Ptot – Total Power Dissipation ( W )

l=10mm

3
15mm

TL=constant
2
25 50
20mm

see Fig.1
0
0 40 80 120 160 200
7 2 94 9086a
94 9584 Tamb – Ambient Temperature ( °C )

Figure 1 : Epoxy glass hard tissue, board thickness 1.5 mm, Figure 2 : Total Power Dissipation vs. Ambient Temperature
RthJA
100 K/W

3.0 10000
PZSM – Non-Repetitive Surge Power

2.5
Tj = 25°C
I F – Forward Current ( A )

Dissipation ( W )

2.0 1000
Tj = 25°C
1.5

1.0 100

0.5

0 10
0 0.5 1.0 1.5 2.0 0.01 0.1 1 10 100
94 9585 VF – Forward Voltage ( V ) 94 9586 tp – Pulse Length ( ms )

Figure 3 : Forward Current vs. Forward Voltage Figure 4 : Non Repetitive Surge Power Dissipation vs. Pulse Length

Rev. A1: 12.12.1994 5

 BZT03C... TELEFUNKEN Semiconductors

Dimensions in mm
Sintered Glass Case 94 9538
SOD 57
Weight max. 0.5 g ∅ 3.6 max. technical drawings
according to DIN
Cathode Identification specifications

∅ 0.82 max.

26 min. 4.2 max. 26 min.

6 Rev. A1: 12.12.1994

 BZT03C...
TELEFUNKEN Semiconductors

OZONE DEPLETING SUBSTANCES POLICY STATEMENT

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements and

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on the
environment.

Of particular concern is the control or elimination of releases into the atmosphere of those substances which are known
as ozone depleting substances ( ODSs).

The Montreal Protocol ( 1987) and its London Amendments ( 1990) will soon severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous
improvements to eliminate the use of any ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection
Agency ( EPA) in the USA and

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

TEMIC can certify that our semiconductors are not manufactured with and do not contain ozone depleting substances.

We reserve the right to make changes to improve technical design without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application,
the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423

Rev. A1: 12.12.1994 7