FPS110, FPS110B, FPS110E

Solid-State Fingerprint Sensor

Features Applications
§ Non-optical solid-state device § Database and network access
§ 300 × 300 sensor array, 50 µm pitch § Portable fingerprint acquisition
§ 1.5 cm × 1.5 cm sensor area § Access control (home, auto, office, etc.)
§ 500-dpi resolution § ATM
§ Operation from 3V to 5.5V § Smart cards
§ Ultra-hard protective coating § Cellular phone security access
§ Integrated 8-bit flash analog-to-digital converter
§ 8-bit microprocessor interface
§ Thin, 2.6 mm VSPA 80/1 package
§ Standard CMOS technology
§ Low power, less than 200 mW

Overview
The Veridicom FPS110 Solid-State Fingerprint
Sensor is a direct contact, fingerprint acquisition
device. It is a high performance, low power, low
cost, capacitive sensor with an integrated two-
dimensional array of metal electrodes in the
sensing array. Each metal electrode acts as one
plate of a capacitor and the contacting finger acts
as the second plate. A passivation layer on the
device surface forms the dielectric between these
two plates. Ridges and valleys on the finger yield
varying capacitor values across the array, which
is read to form an image of the fingerprint.
The FPS110 is manufactured in standard CMOS
technology and is available in an 80-pin, VSPA
80/1. The 300 × 300 sensor array has a 50 µm
pitch and yields a 500-dpi image. The sensor
surface is protected by a patented, ultra-hard,
abrasion and chemical resistant coating.
A block diagram of the FPS110 is shown in
Figure 1. The FPS110 has an integrated 8-bit
flash analog-to-digital converter to digitize the
output of the sensor array. The fingerprint image
is presented an 8-bit bi-directional bus interface CLKOUT
C
compatible with most microprocessors.
For SETCUR resistor differences between the
FPS110 and FPS110B/E see the Pin Information
table.
Figure 1. FPS110 Block Diagram

Veridicom, Inc. • 2040 Martin Avenue • Santa Clara, CA • 95050 • tel 408.565.6000 • fax 408.565.6020 • www.veridicom.com
02-0053-01 Rev F 01/26/01
 FPS110 Solid-State Fingerprint Sensor

Chip Operation
The sensor array is composed of 300 rows and 300 Rows can be accessed in any order; however, the
columns of sensor plates. Associated with each column selected row must be captured before the column cells
are two sample-and-hold circuits. A fingerprint image is are read. The column cells within a row can be accessed
sensed or captured one row at a time. This “row in any order.
capture” occurs in two phases. In the first phase, the
sensor plates of the selected row are pre-charged to the Special Features
VDD voltage. During this pre-charge period, an internal
signal enables the first set of sample-and-hold circuits There are two programmable open-drain outputs that
to store the pre-charged plate voltages of the row. can be used for driving LEDs.

In the second phase, the row of sensor plates is The CLKOUT pin can be enabled to output a square-
discharged with a current source. The rate at which a wave clock of the same frequency as the oscillator
cell is discharged is proportional to the “discharge clock. CLKOUT can be used to drive external circuitry.
current.” After a period of time (referred to as the When ENCLK is high, the clock signal is present at the
“discharge time”), an internal signal enables the second CLKOUT pin. When ENCLK is low or unconnected,
set of sample-and-hold circuits to store the final plate the CLKOUT output is held low.
voltages. The difference between the pre-charged and
discharged plate voltages is a measure of the
capacitance of a sensor cell. After the row capture, the
cells within the row are ready to be digitized.

The sensitivity of the chip is adjusted by changing the

discharge current and discharge time. The nominal
value of the current source is controlled by an external
resistor connected between the SETCUR pin and
ground. The current source is controlled from the
Discharge Current Register (DCR). The discharge time
is controlled by the Discharge Time Register (DTR).

The sensor array is a row-oriented device. Images are

read out one row at a time. The High-Order Row
Address Register (RAH) and the Low-Order Row
Address Register (RAL) must be programmed to select
a row to be captured. Writing to RAL initiates a row
capture. The capture time is a function of the external
clock and the DTR. After the discharge cycle, the
outputs of the row elements will be stored in analog
sample and hold circuits.

After the row capture is completed, the High-Order

Column Address Register (CAH) and Low-Order
Column Address Register (CAL) must be programmed
to select an element within the captured row to be
digitized. Writing to CAL causes the analog-to-digital
(A/D) converter to digitize the difference between the
outputs of the two sample-and-holds of the selected
column cell. The output of the A/D converter is
accessed by reading the CAL register.

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FPS110 Solid-State Fingerprint Sensor

FPS110 Pin Information for VSPA 80/1

Pin Pin Type Description Notes

Number Name
34 A3
35 A2 Address signals connected to these pins select a
Address Inputs
36 A1 register to read from or write to during data transfer.
37 A0
38 CE1 Chip Enable, Active Low When CE1 is low and CE2 is high, the chip is selected.
Input
Chip Enable, Active
39 CE2 When CE1 is low and CE2 is high, the chip is selected.
High
Read Enable, Active This pin must be low while WR is high and the chip
40 RD Low selected in order to read a register on the chip.
Write Enable, Active This pin must be low while the chip is selected to write
17 WR Low to a register on the chip.
18 D7
19 D6
21 D5
22 D4 Inputs when WR is low and chip is selected. Outputs
Bi-directional Data Bus
24 D3 when RD is low, WR is high, and chip is selected.
25 D2
26 D1
27 D0
This pin outputs the oscillator clock frequency when
32 CLKOUT Output Clock Output
ENCLK is high.
A high on this pin enables the CLKOUT pin. A low on
31 ENCLK Input Enable Clock Output this pin holds CLKOUT low. ENCLK has an internal
pull-down resistor.
Open-drain
15 LED1
Output
LED driver This pin can be used to drive an LED.
Open-drain
14 LED2
Output
Place an external resistor R1 (200K – 680K ohms)
between this pin and ground.
3 SETCUR Set Discharge Current
Typical: FPS110, R1 = 680K; FPS110B, R1 = 200K;
Input FPS110E, R1 = 200K
2 N/A
Reserved pin
13 TEST Must be left disconnected.
20, 33 VDD Digital Power Supply
Power
1 VDDA Analog Power Supply
16, 23, 28 VSS Digital ground
Ground
4, 5 VSSA Analog ground
To use the internal oscillator connect a crystal circuit
Input to the On-Chip to this pin. If an external oscillator is used, its output is
29 XTAL1 Input
Oscillator connected to this pin. XTAL1 is the clock source for
internal timing.
To use the internal oscillator connect a crystal circuit
Output of the On-Chip
30 XTAL2 Output to this pin. If an external oscillator is used, leave
Oscillator
XTAL2 unconnected.
Shield Connected to Package
41-80 GNDSHLD These pins should connect to chassis ground.
Ground Top Plate
2, 6-12 N/A N/A Not connected.

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 FPS110 Solid-State Fingerprint Sensor

FPS110 Connection Diagram

VDDA 1 80 GNDSHLD
Reserved 2 79 GNDSHLD
SETCUR 3 78 GNDSHLD
VSSA 4 77 GNDSHLD
VSSA 5 76 GNDSHLD
Unconnected 6 75 GNDSHLD
Unconnected 7 74 GNDSHLD
Unconnected 8 73 GNDSHLD
Unconnected 9 72 GNDSHLD
Unconnected 10 71 GNDSHLD
Unconnected 11 70 GNDSHLD
Unconnected 12 69 GNDSHLD
TEST 13 68 GNDSHLD
LED2 14 67 GNDSHLD
LED1 15 66 GNDSHLD
VSS 16 65 GNDSHLD
WR- 17 64 GNDSHLD
D7 18 63 GNDSHLD
D6 19 62 GNDSHLD
VDD 20 61 GNDSHLD
D5 21 60 GNDSHLD
D4 22 59 GNDSHLD
VSS 23 58 GNDSHLD
D3 24 57 GNDSHLD
D2 25 56 GNDSHLD
D1 26 55 GNDSHLD
D0 27 54 GNDSHLD
VSS 28 53 GNDSHLD
XTAL1 29 52 GNDSHLD
XTAL2 30 51 GNDSHLD
ENCLK 31 50 GNDSHLD
CLKOUT 32 49 GNDSHLD
VDD 33 48 GNDSHLD
A3 34 47 GNDSHLD
A2 35 46 GNDSHLD
A1 36 45 GNDSHLD
A0 37 44 GNDSHLD
CE1- 38 43 GNDSHLD
CE2 39 42 GNDSHLD
RD- 40 41 GNDSHLD

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FPS110 Solid-State Fingerprint Sensor

Function Table

CE1 CE2 RD WR Mode Data Lines

H X X X De-selected High-Z
X L X X De-selected High-Z
L H H H Standby High-Z
L H L H Read Data Out
L H H L Write Data In

Register Map

A3 A2 A1 A0 Access Register Description

0 0 0 0 Write RAL Low Order Row Address Register
0 0 0 1 Write RAH High Order Row Address Register
0 0 1 0 Read/Write CAL Low Order Column Address Register
0 0 1 1 Write CAH High Order Column Address Register
0 1 0 0 Write DTR Discharge Time Register
0 1 0 1 Write DCR Discharge Current Register
0 1 1 0 Write RSR Reserved

Address Register Descriptions

Refer to Row Capture and A/D Conversion Timing on page 8 to calculate row capture and A/D conversion times.

RAL (A3-A0 Address 0000) Write Only

Low Order Row Address Register

This register and bit 0 of RAH form the 9-bit Row Address Register that selects the row to be captured. The
9-bit Row Address Register selects a row address from 0 through 299. Writing the RAL starts a row capture. Only
RAL has to be written if RAH doesn’t change, otherwise RAH has to be written before RAL.

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
RA7 RA6 RA5 RA4 RA3 RA2 RA1 RA0

Bit Bit Function

Number Name
[7:0] RA[7:0] Low eight bits of Row Address Register.

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RAH (A3-A0 Address 0001) Write Only

High Order Row Address Register

Bit 0 of this register and RAL form the 9-bit Row Address Register that selects the row to be converted.
The L1 and L2 bits control two open-drain outputs that can be used to drive LEDs.

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
L1 L2 – – – – – RA8

Bit Bit Function

Number Name
7 L1 L1=0, LED1 output low
L1=1, LED1 output high-Z
6 L2 L2=0, LED 2 output low
L2=1, LED 2 output high-Z
[5:1] – Reserved, write 0 to these bits.
0 RA8 MSB of Row Address

CAL (A3-A0 Address 0010) Read/Write

Low Order Column Address Register

CAL is a read/write register. Writing to this address writes to the low-order 8 bits of the 9-bit Column Address
Register. The 9-bit Column Address Register selects a column from 0 through 299. Writing to CAL causes the
analog-to-digital (A/D) converter to begin digitizing its input. The input of the A/D converter is selected by bits 7
and 6 of the CAH register. The user should wait until the row capture is completed before writing to the CAL.

Reading from this address returns the output of the A/D converter. After writing to CAL, the user should wait until
A/D conversion completes before reading the A/D converter.

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
CA7 CA6 CA5 CA4 CA3 CA2 CA1 CA0

Bit Bit Function

Number Name
[7:0] CA[7:0] (WRITE) Low eight bits of Column Address Register.
(READ) Output of A/D converter.

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FPS110 Solid-State Fingerprint Sensor

CAH (A3-A0 Address 0011) Write Only

High Order Column Address Register

Bit 0 of this register and CAL form the 9-bit Column Address Register that selects a cell from the current row for
digitizing. The user should wait until the row capture is completed before writing to CAH.

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
R T – – – – – CA8

Bit Bit Function

Number Name

[7:1] – Reserved, write 0 to these bits.

0 CA8 MSB of Column Address Register

DTR (A3-A0 Address 0100) Write Only

Discharge Time Register

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
PD T6 T5 T4 T3 T2 T1 T0

Bit Bit
Number Name Function
7 PD Power down chip.
PD=0, Chip in Normal Mode
PD=1, Chip in Low Power Mode
[6:0] T[6:0] Selects the count to be loaded into the Discharge Timer. Discharge time is selected in
increments of the oscillator period. Discharge Time is defined as the period between
the sampling and holding of the pre-charged sensor cell to the sampling and holding of
the discharging sensor cell. The Discharge Time can be calculated from the following
equation:

Discharge Time = T[6:0] * tOSC

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 FPS110 Solid-State Fingerprint Sensor

DCR (A3-A0 Address 0101) Write Only

Discharge Current Register

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
F2 F1 TRST DC4 DC3 DC2 DC1 DC0

Bit Bit Function

Number Name
[7:6] F2, F1 These two bits tell the chip the frequency of the external oscillator or crystal that is
connected to the chip.

F2 F1 XTAL Input
0 0 10-15 MHz
0 1 15-20 MHz
1 0 20-30 MHz
1 1 30-40 MHz
5 TRST Timer Reset. Set this bit to halt and reset the Discharge Timer. Resetting the
Discharge Timer is necessary to put the Discharge Timer in a known state after power-
up or after returning to Normal mode from Low-power mode (See bit 7 of DTR).

TRST=0, Normal Timer Operation

TRST=1, Halt and Clear Discharge Timer (doesn’t clear DTR)
[4:0] DC[4:0] Selects the Discharge Current source value.

RSR (A3-A0 Address 0110) Write Only

Reserved
The user must initialize this resistor to zero.

MSB LSB
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
– – – – – – – –

Bit Bit Function

Number Name
[7:0] – Reserved. Write 0 to these bits.

Row Capture and A/D Conversion Timing

F2 F1 XTAL Input Range Row Capture Time in A/D Conversion Time in

OSC Clock Periods OSC Clock Periods
0 0 10-15 MHz 18+n 13
0 1 15-20 MHz 24+n 15
1 0 20-30 MHz 36+n 23
1 1 30-40 MHz 48+n 30
NOTE: n is selected by bits T[6:0] of DTR.

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FPS110 Solid-State Fingerprint Sensor

A/D Converter
The integrated 8-bit flash A/D converter is a buffered device. Each write to CAL causes: 1) the result of the previous
conversion to be latched and made readable at CAL, and 2) the A/D converter to start digitizing its current input.
Consequently, it takes 301 writes to CAL in order to digitize the 300 cells of a row.

Specifications*
*All specifications in this document are preliminary and subject to change.

Absolute Maximum Ratings

• Storage Temperature: -65° to +150° C

• DC Voltage Applied to any Pins: -0.5 V to +7.0 V

Operating Range

Symbol Parameter Min Max Unit

VDD Digital Supply Voltage +3.0 +5.5 V
VDDA Analog Supply Voltage +3.0 +5.5 V
Standard Temperature Range 0 60 °C
fOSC Oscillator Frequency VDD = 5.0V 10 40 MHz
VDD = 3.0V 10 20 MHz

DC Electrical Characteristics

Symbol Parameter Test Conditions Min Max Unit

VOH Output High Voltage VDD = 4.5V, IOH = -4 mA 2.4 – V
VOL Output Low Voltage VDD = 4.5V, IOL = 8 mA – 0.4 V
VOH Output High Voltage VDD = 3.0V, I OH = -2 mA 2.4 - V
VOL Output Low Voltage VDD = 3.0V, IOL = 4 mA - 0.4 V
VIH Input High Voltage 2.0 VDD V
VIL Input Low Voltage VDD = 4.5V -0.5 0.8 V
VIL Input Low Voltage VDD = 3.00 -0.5 0.6 V
ILI Input Leakage Current GND ≤ Vin ≤ 5.5V -5.0 5.0 µA
ILO Output Leakage Current GND ≤ Vout ≤ 5.5V -5.0 5.0 µA

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 FPS110 Solid-State Fingerprint Sensor

Power Supply Characteristics (VDD = 5.5V, fOSC=40 MHz Standard Temperature Range)

Symbol Parameter Test Conditions Typ Max Unit

IDD1 Digital Supply Current Power down with CLKOUT disabled, (DTR bit 7 = 1, <1 50 µA
ENCLK = 0)
IDD2 Power down with CLKOUT enabled. 17 20 mA
( DTR bit 7 = 1, ENCLK = 1)
IDD3 Idle with CLKOUT disabled. 8 12 mA
(DTR bit 7 = 0, ENCLK = 0)
IDD4 Idle with CLKOUT enabled. 17 20 mA
( DTR bit 7 = 0, ENCLK = 1)
IDD5 Active A/D conversion with CLKOUT disabled. 15 25 mA
(DTR bit 7 = 0, ENCLK = 0)
IDD6 Active A/D conversion with CLKOUT enabled. 25 30 mA
(DTR bit 7 = 0, ENCLK = 1)
IDDA Analog Supply Current Power down with CLK disabled or enabled. <10 50 µA
(DTR bit 7 = 1)
IDLE with CLKOUT disabled or enabled, 15 22 mA
(DTR bit 7 = 0)
Active A/D conversion with CLKOUT disabled or 18 26 mA
enabled. (DTR bit 7 = 0)

Note: Analog supply currents are independent of fOSC

Note: XTAL2 & CLKOUT driving CLOAD = 50pF

Normalized Digital Supply Current vs. fOSC, 5.5V, 25°c

1.20

1.00

0.80

IDD3
Normalized

IDD4
0.60

IDD5

IDD6
0.40

0.20

0.00
10 20 30 40
Frequency (MHz)

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FPS110 Solid-State Fingerprint Sensor

Power Supply Characteristics VDD = 3.6V, Commercial Temperature Range, fOSC = 20 MHz

Symbol Parameter Test Conditions Typ Max Unit

IDD1 Digital Supply Current Power down with CLKOUT disabled. <1 50 µA
IDD2 (VDD = max, fOSC = max, DTR bit 7 = 1, ENCLK = 0)
Power down with CLKOUT enabled. 6 10 mA
(VDD = max, fOSC = max, DTR bit 7 = 1, ENCLK = 1)
IDD3 Idle with CLKOUT disabled. 3 6 mA
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 0)
IDD4 Idle with CLKOUT enabled. 6 10 mA
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 1)
IDD5 Active A/D conversion with CLKOUT disabled. 6 10 mA
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 0)
IDD6 Active A/D conversion with CLKOUT enabled. 9 13 mA
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 1)

IDDA Analog Supply Current Power down with CLK disabled or enabled. <2 50 µA
(VDDA = max, DTR bit 7 = 1)
IDLE with CLKOUT disabled or enabled, (DTR bit 7 = 10 15 mA
0)
Active A/D conversion with CLKOUT disable or 12 18 mA
enable. (DTR bit 7 = 0)

Note: Analog supply currents are independent of fOSC

Note: XTAL2 & CLKOUT driving CLOAD = 50 Pf

Normalized Digital Supply Current vs. fOSC, 3.6V, 25°c

1.20

1.00

0.80

IDD3
Normalized

IDD4
0.60
IDD5
IDD6

0.40

0.20

0.00
10 20
Frequency (MHz)

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Read Cycle Timing at VDD = 3.0V, Standard Temperature Range

Parameter Description Min Max Unit

tAAC Address valid to data valid. – 70 ns

tRC Read Cycle Time 70 – ns

tACE1 CE1 low to data valid – 70 ns

tACE2 CE2 high to data valid – 70 ns

tDOE RD low to data valid – 35 ns

tLZOE RD low to low Z 5 – ns

tHZOE RD high to high Z – 30 ns

tLZCE CE1 low and CE2 high to low Z 5 – ns

tHZCE CE1 high to high Z or CE2 low to high Z – 30 ns

tLZWE WR high to low Z 5 – ns

tHZWE WR low to high Z – 30 ns

Figure 2. Read Cycle Timing

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Write Cycle Timing at VDD = 3.0V, Standard Temperature Range

Parameter Description Min Max Unit

tWC Write Cycle 70 – ns
tSCE1 CE1 low to write end 60 – ns

tSCE2 CE2 high to write end 60 – ns

tAW Address setup to write end 55 – ns

tHA Address hold from write end 5 – ns

tSA Address set-up to write start 5 – ns

tPWE WR Pulse Width 40 – ns

tSD Data setup to write end 35 – ns

tHD Data hold from write end 5 – ns

Figure 3. Write Cycle Timing

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 FPS110, FPS110B, FPS110E
Solid-State Fingerprint Sensor

Image Capture
Power Up and Initialization
Begin
Image
Capture

Write RAH if needed Needed if new value to be written

Power-Up differs from current RAH contents

Write RAL
Initiates row capture.

Write DTR with PD bit set Set DTR[7] (PD) to power down device. Wait until row capture
completes

Wait 1 µs Wait for chip to power down.

First A/D conversion
of image?

Clear DTR[7] (PD) to return from power-down.

Write DTR with Yes
PD bit clear
DTR[6:0] initialized to known values.
Write CAH

Wait 10 µs Wait for chip to return from power-down. No

Write CAL Initiates first A/D conversion.

Wait until A/D conversion

Set DCR[5] (TRST) to halt and reset the discharge completes
Write DCR with TRST set
timer.
No

Needed if new value to be written

Clear TRST for normal dicharge timer operation. Write CAH if needed
Write DCR with differs from current CAH contents
TRST clear
DCR[4:0] initialized to known values.
Initiates A/D conversion and
Write CAL transfers previous result to output
buffer.
Clear RSR Initialize RSR to zero.

Wait until A/D conversion

completes
No

Initialization Done

Read CAL Read output buffer.

Converted
all cells in current
row?

Yes

Converted
last cell of image?

Yes

Needed to transfer result of last

Write CAL
A/D conversion to output buffer.

Read CAL Read value of last cell.

Image Captured

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FPS110 Solid-State Fingerprint Sensor

FPS110 Package

FPS110 Assembly

FPS110 Dimensions
Symbol Description Min Nom Max
N Pin Count 80
A Overall Height .102 (2.60)
A1 Stand Off .006 (.15)
B Pin Width .008 (.20)
C Pin Thickness .008 (.20)
D Tip to tip Dimension 1.016 (25.8) 1.025 (26.0) 1.032 (26.2)
D1 Package Body .941 (23.9) .945 (24.0) .949 (24.1)
E1 Package Body .941 (23.9) .945 (24.0) .949 (24.1)
F Pin Pitch .0187 (.47) .0197 (.50) .0207 (.53)
L1 Foot length .032 (.81)
Note: Dimensions are in inches (mm)

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 FPS110 Solid-State Fingerprint Sensor

FPS110 Solder Pad Layout

Symbol Description Dimension

N Pin Count 80
A Tip to Tip Dimension 1.074 (27.30)
P Pitch .0197 (.50)
L Pad Length .065 (1.65)
W Pad Width .012 (.30)
Note: Dimensions are in inches (mm)

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FPS110 Solid-State Fingerprint Sensor

Manufacturing Considerations

CAUTION: DO NOT USE ANY METAL PICKUP TOOLS WHICH WOULD CONTACT THE
SENSOR DEVICE SURFACE WITHOUT PROTECTIVE LID INSTALLED

• Surface Mount reflow temperature:

Recommended 220°C Max reflow spike*

Max Temp 240°C

• Avoid any high pressure spray directly to the sensor device surface.

• Use standard handling practices for ESD sensitive devices.

* Refer to Veridicom PCB Assembly Process Guidelines, Document # 02-0042-01;

195° - 220°C reflow spike max temp. 40 sec. cycle.

Array Pixel Criteria

• FPS110 ships with no more than 10 non-functional pixels.

• FPS110 ships with no more than 2 adjacent non-functional pixels

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