bee-EXPERIMENT 5 Zener
bee-EXPERIMENT 5 Zener
bee-EXPERIMENT 5 Zener
I. OBJECTIVES
1. To exhibit the characteristic of a zener diode.
2. To investigate how zener diode will maintain voltage regulation with variable supply.
The location of the zener region can be controlled by varying the doping levels. An increase in
doping producing an increase in the number of added impurities, which will decrease the zener
potential. Zener diodes are available having zener potential of 1.8 to 200V with power ratings from ¼ to
50 Watts. Because of its high temperature and current capability, silicon is usually preferred in
manufacturing zener diodes.
The zener diode is a special type of diode designed to operate at voltages that exceed the
breakdown voltage or peak reverse voltage. This breakdown region is called the Zener region.
The breakdown voltage of a zener diode (Vz) is determined by the resistivity of the diode which
is controlled by the doping technique used during the manufacturing. The rated breakdown voltage
represents the reverse voltage at the zener test current. The ability of a zener diode to dissipate power
decreases as the temperature increases. Power dissipation ratings are given for specific temperatures. A
derating factor is given by the diode manufacturer to determine the power rating at different
temperatures.
V. PROCEDURE
Table 5.1
Vs (V) Vz (V) - Iz (mA) -
0
10
20
25
30
35
Table 5.2
VIII. GRAPHS
IX. ANALYSIS OF RESULTS
X. CONCLUSIONS
Rs
Vin
91Ω D1
Vz=8V RL
Pzmax=400mW 0.22kΩ
02BZ2.2