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    NTE6354 Thru NTE6365 Silicon Power Rectifier Diode, 300 Amp: Features

    Uploaded by

    Juan
    This document provides specifications for NTE6354 through NTE6365 silicon power rectifier diodes rated for 300 amps. The diodes have voltage ratings from 400-1600 volts and are available in anode-to-case or cathode-to-case configurations. The document lists electrical, thermal, and mechanical specifications including maximum current, voltage, temperature ratings, and mounting details.

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    © All Rights Reserved
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    NTE6354 Thru NTE6365 Silicon Power Rectifier Diode, 300 Amp: Features

    Uploaded by

    Juan
    25 views3 pages
    This document provides specifications for NTE6354 through NTE6365 silicon power rectifier diodes rated for 300 amps. The diodes have voltage ratings from 400-1600 volts and are available in anode-to-case or cathode-to-case configurations. The document lists electrical, thermal, and mechanical specifications including maximum current, voltage, temperature ratings, and mounting details.

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    This document provides specifications for NTE6354 through NTE6365 silicon power rectifier diodes rated for 300 amps. The diodes have voltage ratings from 400-1600 volts and are available in anode-to-case or cathode-to-case configurations. The document lists electrical, thermal, and mechanical specifications including maximum current, voltage, temperature ratings, and mounting details.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    25 views3 pages

    NTE6354 Thru NTE6365 Silicon Power Rectifier Diode, 300 Amp: Features

    Uploaded by

    Juan
    This document provides specifications for NTE6354 through NTE6365 silicon power rectifier diodes rated for 300 amps. The diodes have voltage ratings from 400-1600 volts and are available in anode-to-case or cathode-to-case configurations. The document lists electrical, thermal, and mechanical specifications including maximum current, voltage, temperature ratings, and mounting details.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    NTE6354 thru NTE6365

    Silicon Power Rectifier Diode, 300 Amp


    Features:
    D Diffused Diode
    D High Voltage Ratings up to 1600 Volts
    D High Surge Current Capabilities
    D Available in Anode–to–Case or Cathode–to–Case Style
    Ratings and Characteristics:
    Average Forward Current (TC = +130°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
    Maximum Repetitive Peak Reverse Voltage, VRRM
    NTE6354, NTE6355* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
    NTE6356, NTE6357* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
    NTE6358, NTE6359* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
    NTE6362, NTE6363* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1400V
    NTE6364, NTE6365* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
    Maximum Non–Repetitive Peak Reverse Voltage, VRSM
    NTE6354, NTE6355* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
    NTE6356, NTE6357* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V
    NTE6358, NTE6359* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
    NTE6362, NTE6363* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
    NTE6364, NTE6365* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
    Maximum Repetitive Peak Reverse Current (TJ = +200°C), IRRM
    NTE6354, NTE6355* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
    NTE6356, NTE6357* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
    NTE6358, NTE6359* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
    NTE6362, NTE6363* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
    NTE6364, NTE6365* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
    Maximum Forward Surge Current, IFSM
    50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000A
    60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5200A
    Fusing Current, I2t
    50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214000A2s
    60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195000A2s
    Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +180°C
    * Indicated Anode–to–Case polarity, Cathode–to–Case polarity is standard.
    Electrical Specifications:

    Parameter Symbol Test Conditions Rating Unit


    Maximum Average Forward Current IF(AV) 180° sinusoidal condition, TC = +130°C Max 300 A
    Maximum Peak One–Cycle IFSM t = 10ms No voltage 5000 A
    Non–Repetitive Surge Current reapplied
    t = 8.3ms 5200 A
    t = 10ms 100% VRRM 3800 A
    reapplied
    t = 8.3ms 4000 A
    Sinusoidal half wave,
    Maximum I2t for Fusing I2t t = 10ms No voltage Initial TJ = TJ max 214000 A2s
    reapplied
    t = 8.3ms 195000 A2s
    Maximum I2t for Individual Device t = 10ms 100% VRRM 151000 A2s
    Fusing reapplied
    t = 8.3ms 138000 A2s
    Maximum I2pt I2pt t = 0.1 to 10ms, no voltage reapplied 2140000 A2pt
    Maximum Value of Threshold VM (TO) TJ = +200°C 0.610 V
    Voltage
    Maximum Value of Forward Slope rt TJ = +200°C 0.751 mΩ
    Resistance

    Thermal–Mechanical Specifications:

    Parameter Symbol Test Conditions Rating Unit


    Maximum Operation Junction Temperature TJ –40 to + 180 °C
    Maximum Storage Temperature Tstg –55 to + 180 °C
    Maximum Internal Thermal Resistance RthJC DC operation 0.18 K/W
    Junction–to–Case
    Thermal Resistance, Case–to–Sink RthCS Mounting surface flat, smooth and 0.08 K/W
    greased
    Mounting Torque T Non–lubricated threads 40.06 m•N
    (360) (in•lb)
    3.250 (82.55) 1.250
    Max (31.75)
    Max
    .755 (19.2) Max .828 (21.03) Max

    6.000 (152.4) Max 3/4–16 UNF–2A

    Seating Plane

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