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NTE5411 Thru NTE5416 Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate, TO126

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NTE5411 thru NTE5416

Silicon Controlled Rectifier (SCR)


4 Amp, Sensitive Gate, TO126
Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for
high volume consumer applications such as temperature, light, and speed control: process and re-
mote control, and warning systems where reliability of operation is important.

Features:
D Passivated Surface for Reliability and Uniformity
D Power Rated at Economical Prices
D Practical Level Triggering and Holding Characteristics

Absolute Maximum Ratings: (TC = +110°C unles otherwise specified)


Repetitive Peak Forward and Reverse Blocking Voltage, VDRM, VRRM
(1/2 Sine Wave, RGK = 1000Ω, TC = −40° to +110°C, Note 1)
NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Non−Repetitive Peak Reverse Blocking Voltage , VRSM
(1/2 Sine Wave, RGK = 1000Ω, TC = −40° to +110°C)
NTE5411 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5412 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5413 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
NTE5415 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
NTE5416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 650V
Average On−State Current, IT(AV)
TC = −40° to +110°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6A
Surge On−State Current (TC = +90°C), ITSM
1/2 Sine wave, 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
1/2 Sine wave, 1.5ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Circuit Fusing (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.6A2s
Peak Gate Power (Pulse Width = 10μs, TC = +90°C), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap-
plied to the gate concurrently with a negative potential on the anode. Devices should not
be tested with a constant current source for forward or reverse blocking capability such that
the voltage applied exceeds the rated blocking voltage.
Absolute Maximum Ratings (Cont’d): (TC = +110°C unles otherwise specified)
Average Gate Power (t = 8.2ms, TC = +90°C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1W
Peak Forward Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2A
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3°C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Mounting Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 in. lb.
Note 2. Torque rating applies with the use of a compression washer. Mounting torque in excess of
6 in. lb. does not appreciably lower case−to−sink thermal resistance. Anode lead and heat-
sink contact pad are common.

Electrical Characteristics: (TC = +25°C, RGK = 1000Ω unles otherwise specified)


Parameter Symbol Test Conditions Min Typ Max Unit
Peak Forward or Reverse IDRM, Rated VDRM or VRRM, TC = +25°C − − 10 μA
Blocking Current IRRM
Rated VDRM or VRRM, TC = +110°C − − 200 μA
Peak Forward “ON” Voltage VTM ITM = 8.2A Peak, Note 3 − − 2.2 V
Gate Trigger Current IGT VAK = 12V, RL = 24Ω − − 200 μA
(Continuous DC, Note 4)
VAK = 12V, RL = 24Ω, TC = −40°C − − 500 μA
Gate Trigger Voltage VGT Source Voltage = 12V, RS = 50Ω, − − 1 V
(Continuous DC) VAK = 12V, RL = 24Ω, TC = −40°C
Gate Non−Trigger Voltage VGD VAK = Rated VDRM, RL = 100Ω, 0.2 − − V
TC = +110°C
Holding Current IH VAK = 12V, IGT = 2mA, TC = +25°C − − 5 mA
Initiating On−State Current = 200mA, − − 10 mA
TC = −40°C
Total Turn−On Time tgt Source Voltage = 12V, RS = 6kΩ, − 2 − μs
ITM = 8.2A, IGT = 2mA, Rated VDRM,
Rise Time = 20ns, Pulse Width = 10μs
Forward Voltage Application Rate dv/dt VD = Rated VDRM, TC = +110°C − 10 − V/μs

Note 3. Pulse Width = 1ms to 2ms, Duty Cycle = 2%.


Note 4. Measurement does not include RGK current.
.330 (8.38) Max

.175
(4.45)
Max
.450
(11.4)
Max

.118
(3.0)
Dia

.655
(16.6)
Max
.030 (.762) Dia

K A G

.090 (2.28)

.130 (3.3)
Max

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