Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 140 views

    Q603 - Nte159

    Uploaded by

    danelo
    This document provides specifications for the NTE159 silicon PNP transistor audio amplifier and switch. It lists absolute maximum ratings such as collector-emitter voltage up to 80V. Electrical characteristics include a DC current gain of 100-500 and collector-emitter saturation voltages of 0.15-1.1V depending on current and temperature. Dynamic characteristics include output and input capacitances of 30-110pF and 1-400pF respectively. Switching characteristics include turn-on and turn-off times of 3-5ns. Physical dimensions and a diagram of the transistor package are also provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Q603 - Nte159

    Uploaded by

    danelo
    140 views2 pages
    This document provides specifications for the NTE159 silicon PNP transistor audio amplifier and switch. It lists absolute maximum ratings such as collector-emitter voltage up to 80V. Electrical characteristics include a DC current gain of 100-500 and collector-emitter saturation voltages of 0.15-1.1V depending on current and temperature. Dynamic characteristics include output and input capacitances of 30-110pF and 1-400pF respectively. Switching characteristics include turn-on and turn-off times of 3-5ns. Physical dimensions and a diagram of the transistor package are also provided.

    Original Title

    Q603 - nte159

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for the NTE159 silicon PNP transistor audio amplifier and switch. It lists absolute maximum ratings such as collector-emitter voltage up to 80V. Electrical characteristics include a DC current gain of 100-500 and collector-emitter saturation voltages of 0.15-1.1V depending on current and temperature. Dynamic characteristics include output and input capacitances of 30-110pF and 1-400pF respectively. Switching characteristics include turn-on and turn-off times of 3-5ns. Physical dimensions and a diagram of the transistor package are also provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    140 views2 pages

    Q603 - Nte159

    Uploaded by

    danelo
    This document provides specifications for the NTE159 silicon PNP transistor audio amplifier and switch. It lists absolute maximum ratings such as collector-emitter voltage up to 80V. Electrical characteristics include a DC current gain of 100-500 and collector-emitter saturation voltages of 0.15-1.1V depending on current and temperature. Dynamic characteristics include output and input capacitances of 30-110pF and 1-400pF respectively. Switching characteristics include turn-on and turn-off times of 3-5ns. Physical dimensions and a diagram of the transistor package are also provided.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    NTE159 Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

    Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TA = 25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction to Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W Thermal Resistance, Junction to Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Note 1. Matched complementary pairs are available upon request (NTE159MCP). Matched com plementary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain hFE VCE = 10V, IC = 100A VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 100mA VCE = 10V, IC = 500mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 25 40 50 40 30 250 0.15 0.5 0.9 1.1 V V V V V(BR)CEO IC = 10mA, IB = 0, Note 2 V(BR)CBO IC = 10A, IE = 0 V(BR)EBO IE = 10A, IC = 0 ICBO IEBO VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = +75C 80 80 5 50 5 100 V V V nA A nA Symbol Test Conditions Min Typ Max Unit

    Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%.

    Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)


    Parameter Dynamic Characteristics Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure Switching Characteristics Turn-On Time Turn-Off Time ton toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA 100 400 ns ns Cob Cib hfe NF VCB = 20V, IE = 0, f = 1MHz VBE = 500mV, f = 1MHz IC = 500mA, VCE = 10V, f = 100MHz IC = 100mA, VCE = 10V, RS = 1k, f = 1kHz, BW = 1Hz 1 30 110 5 3 dB pF pF Symbol Test Conditions Min Typ Max Unit

    .135 (3.45) Min

    .210 (5.33) Max

    Seating Plane

    .500 (12.7) Min

    .021 (.445) Dia Max

    E B C .100 (2.54) .050 (1.27)

    .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

    You might also like