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    NTE100 (PNP) & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer For AM Radio, Medium Speed Switch

    Uploaded by

    Ernesto Suarez
    The document provides specifications for the NTE100 and NTE101 germanium complementary transistors. The NTE100 is a PNP transistor and the NTE101 is an NPN transistor. It lists maximum ratings and electrical characteristics including collector-base voltage, collector current, gain, capacitance, and switching times. The transistors are intended for use in oscillators, mixers for AM radios, and medium speed switching.

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    Attribution Non-Commercial (BY-NC)
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    NTE100 (PNP) & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer For AM Radio, Medium Speed Switch

    Uploaded by

    Ernesto Suarez
    91 views3 pages
    The document provides specifications for the NTE100 and NTE101 germanium complementary transistors. The NTE100 is a PNP transistor and the NTE101 is an NPN transistor. It lists maximum ratings and electrical characteristics including collector-base voltage, collector current, gain, capacitance, and switching times. The transistors are intended for use in oscillators, mixers for AM radios, and medium speed switching.

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    The document provides specifications for the NTE100 and NTE101 germanium complementary transistors. The NTE100 is a PNP transistor and the NTE101 is an NPN transistor. It lists maximum ratings and electrical characteristics including collector-base voltage, collector current, gain, capacitance, and switching times. The transistors are intended for use in oscillators, mixers for AM radios, and medium speed switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    91 views3 pages

    NTE100 (PNP) & NTE101 (NPN) Germanium Complementary Transistors Oscillator, Mixer For AM Radio, Medium Speed Switch

    Uploaded by

    Ernesto Suarez
    The document provides specifications for the NTE100 and NTE101 germanium complementary transistors. The NTE100 is a PNP transistor and the NTE101 is an NPN transistor. It lists maximum ratings and electrical characteristics including collector-base voltage, collector current, gain, capacitance, and switching times. The transistors are intended for use in oscillators, mixers for AM radios, and medium speed switching.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    NTE100 (PNP) & NTE101 (NPN)

    Germanium Complementary Transistors


    Oscillator, Mixer for AM Radio,
    Medium Speed Switch
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    CollectorEmitter Voltage (Note 1), VCEO
    NTE100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
    NTE101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    EmitterBase Voltage, VEBO
    NTE100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
    NTE101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
    Collector Current, IC
    NTE100 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
    NTE101 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
    Emitter Current (NTE100 Only), IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
    Total Device Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
    Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5mW/C
    Operating Collector Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +100C
    Note 1. Punchthrough voltage.
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter
    CollectorBase Breakdown Voltage
    NTE100

    Symbol
    V(BR)CBO

    IE = 0

    NTE101
    EmitterBase Breakdown Voltage
    NTE100

    V(BR)EBO

    IC = 0

    NTE101
    Punch Through Voltage
    NTE100

    VPT

    Test Conditions

    Min

    Typ

    Max

    Unit

    IC = 20A

    25

    IC = 100A

    25

    IE = 20A

    12

    IE = 100A

    25

    24

    25

    VCB = 12V

    VCB = 12V, TA = +80C

    40

    90

    VCB = 25V

    VEBfl = 1V, Note 2

    NTE101
    Collector Cutoff Current
    NTE100
    NTE101

    ICBO

    IE = 0

    Note 2. VPT is determined by measuring the EmitterBase floating potential VEBfl. The Collector
    Base Voltage, VCB, is increased until VEBfl = 1V; this value of VCB = (VPT + 1V). Care must
    be taken not to exceed maximum CollectorBase Voltage specified under maximum ratings.

    Electrical Characteristics (Contd): (TA = +25C unless otherwise specified)


    Parameter
    Emitter Cutoff Current
    NTE100

    Symbol
    IEBO

    Test Conditions

    Min

    Typ

    Max

    Unit

    VEB = 2.5V

    2.5

    VEB = 25V

    VCE = 0.15V, IC = 12mA

    30

    100

    VCE = 0.20V, IC = 24mA

    24

    110

    VCE = 1V, IC = 10mA

    20

    100

    VCE = 0.35V, IC = 200mA

    10

    100

    IB = 0.4mA, IC = 12mA

    0.26

    0.35

    IB = 1mA, IC = 24mA

    0.30

    0.40

    IB = 0.5mA, IC = 10mA

    0.15

    0.22

    0.40

    IB = 0.4mA, IC = 12mA

    0.08

    0.15

    IB = 1mA, IC = 24mA

    0.08

    0.20

    IB = 0.5mA, IC = 10mA

    0.07

    0.20

    VCE = 6V IC = 1mA, f = 1kHz

    135

    VCE = 5V

    105

    20

    pF

    VCB = 5V

    14

    20

    pF

    IC = 10mA, IB(1) = 1.3mA,


    IB(2) = 0.7mA, VBE(off) = 0.8V,
    RL = 1k

    0.14

    0.07

    s
    s

    IC = 0

    NTE101
    Static Forward Current Transfer Ratio
    NTE100

    hFE

    NTE101
    BaseEmitter Voltage
    NTE100

    VBE

    NTE101
    CollectorEmitter Saturation Voltage
    NTE100

    VCE(sat)

    NTE101
    SmallSignal Forward Current Transfer Ratio
    NTE100

    hfe

    NTE101
    Output Capacitance
    NTE100

    Cob

    NTE101

    VCB = 6V

    IE = 0, f = 1MHz

    Switching Characteristics
    Delay Time
    NTE100

    td

    NTE101
    Rise Time

    tr

    0.20

    Storage Time
    NTE100

    ts

    0.38

    0.70

    0.19

    0.40

    800

    1400

    pcb

    NTE101
    Fall Time
    NTE100

    tf

    NTE101
    Stored Base Charge

    Qsb

    IB(1) = 1mA, IC = 10mA

    s
    s
    s

    .352 (8.95) Dia Max


    .320 (98.13) Dia Max

    .250 (6.35)
    Max

    1.500 (38.1)
    Min

    .019 (0.5) Dia


    Base
    Emitter

    Collector

    45

    .031 (.793)

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