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    2SC520A Nte130

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    hurantia
    The NTE130 and NTE219 are silicon power transistors designed for audio power amplification and switching applications. They have a DC current gain ranging from 20-70 and a saturation voltage of 1.1V or less at currents up to 4A. The transistors have maximum ratings of 60V for collector-emitter voltage, 70V for collector-emitter sustained voltage, and 115W for total device dissipation.

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    © All Rights Reserved
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    2SC520A Nte130

    Uploaded by

    hurantia
    20 views2 pages
    The NTE130 and NTE219 are silicon power transistors designed for audio power amplification and switching applications. They have a DC current gain ranging from 20-70 and a saturation voltage of 1.1V or less at currents up to 4A. The transistors have maximum ratings of 60V for collector-emitter voltage, 70V for collector-emitter sustained voltage, and 115W for total device dissipation.

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    2SC520A= nte130

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    The NTE130 and NTE219 are silicon power transistors designed for audio power amplification and switching applications. They have a DC current gain ranging from 20-70 and a saturation voltage of 1.1V or less at currents up to 4A. The transistors have maximum ratings of 60V for collector-emitter voltage, 70V for collector-emitter sustained voltage, and 115W for total device dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views2 pages

    2SC520A Nte130

    Uploaded by

    hurantia
    The NTE130 and NTE219 are silicon power transistors designed for audio power amplification and switching applications. They have a DC current gain ranging from 20-70 and a saturation voltage of 1.1V or less at currents up to 4A. The transistors have maximum ratings of 60V for collector-emitter voltage, 70V for collector-emitter sustained voltage, and 115W for total device dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch

    Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: D DC Current Gain: hFE = 20 70 @ IC = 4A D CollectorEmitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CollectorEmitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.657W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W Electrical Characteristics: (TC =+25C unless otherwise specified)
    Parameter OFF Characteristics CollectorEmitter Sustaining Voltage CollectorEmitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 1 VCER(sus) IC = 200mA, RBE = 100, Note 1 ICEO ICEX Emitter Cutoff Current IEBO VCE = 30V, IB = 0 VCE = 100V, VBE(off) = 1.5V VCE = 100V, VBE(off) = 1.5V, TC = +150C VBE = 7V, IC = 0 60 70 0.7 1.0 5.0 5.0 V V mA mA mA mA Symbol Test Conditions Min Typ Max Unit

    Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%.

    Electrical Characteristics (Contd): (TC =+25C unless otherwise specified)


    Parameter ON Characteristics (Note 1) DC Current Gain CollectorEmitter Saturation Voltage BaseEmitter ON Voltage Second Breakdown Second Breakdown Collector Current with Base Forward Biased Dynamic Characteristics Current GainBandwidth Product SmallSignal Current Gain SmallSignal Current Gain Cutoff Frequency fT hfe fhfe IC = 500mA, VCE = 10V, f = 1MHz IC = 1A, VCE = 4V, f = 1kHz VCE = 4V, IC = 1A, f = 1kHz 2.5 15 10 120 kHz MHz Is/b VCE = 40V, t = 1.0s; Nonrepetitive 2.87 A hFE VCE(sat) VBE(on) IC = 4A, VCE = 4V IC = 10A, VCE = 4V IC = 4A, IB = 400mA IC = 10A, IB = 3.3A IC = 4A, VCE = 4V 20 5 70 1.1 3.0 1.5 V V V Symbol Test Conditions Min Typ Max Unit

    Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%. Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (hFE) matched to within 10% of each other. Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN). .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane

    .312 (7.93) Min Emitter .215 (5.45)

    .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)

    .430 (10.92)

    .188 (4.8) R Max

    Base

    .525 (13.35) R Max Collector/Case

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