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    Nte 123 A

    Uploaded by

    Andres Mauricio Quiceno Betancourt
    The NTE123A and NTE159M are complementary silicon transistors designed for general purpose use such as switching and amplification from audio to VHF frequencies. They have low collector saturation voltage of 1V maximum and high current gain-bandwidth product of minimum 300MHz at 20mA collector current. The document provides detailed maximum ratings and electrical characteristics for both transistors, including breakdown voltages, cutoff currents, gain, saturation voltages, capacitances, and switching times.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Nte 123 A

    Uploaded by

    Andres Mauricio Quiceno Betancourt
    69 views4 pages
    The NTE123A and NTE159M are complementary silicon transistors designed for general purpose use such as switching and amplification from audio to VHF frequencies. They have low collector saturation voltage of 1V maximum and high current gain-bandwidth product of minimum 300MHz at 20mA collector current. The document provides detailed maximum ratings and electrical characteristics for both transistors, including breakdown voltages, cutoff currents, gain, saturation voltages, capacitances, and switching times.

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    nte123a

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    The NTE123A and NTE159M are complementary silicon transistors designed for general purpose use such as switching and amplification from audio to VHF frequencies. They have low collector saturation voltage of 1V maximum and high current gain-bandwidth product of minimum 300MHz at 20mA collector current. The document provides detailed maximum ratings and electrical characteristics for both transistors, including breakdown voltages, cutoff currents, gain, saturation voltages, capacitances, and switching times.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    69 views4 pages

    Nte 123 A

    Uploaded by

    Andres Mauricio Quiceno Betancourt
    The NTE123A and NTE159M are complementary silicon transistors designed for general purpose use such as switching and amplification from audio to VHF frequencies. They have low collector saturation voltage of 1V maximum and high current gain-bandwidth product of minimum 300MHz at 20mA collector current. The document provides detailed maximum ratings and electrical characteristics for both transistors, including breakdown voltages, cutoff currents, gain, saturation voltages, capacitances, and switching times.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    NTE123A (NPN) & NTE159M (PNP)

    Silicon Complementary Transistors


    General Purpose
    Description:
    The NTE123A (NPN) and NTE159M (PNP) are widely used Industry Standard complementary transistors in a TO18 type case designed for applications such as mediumspeed switching and amplifiers from
    audio to VHF frequencies.
    Features:
    D Low Collector Saturation Voltage: 1V (Max)
    D High Current GainBandwidth Product: fT = 300MHz (Min) @ IC 20mA
    Absolute Maximum Ratings:
    CollectorEmitter Voltage, VCEO
    NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
    NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    CollectorBase Voltage, VCBO
    NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
    NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    EmitterBase Voltage, VEBO
    NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Continuous Collector Current, IC
    NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
    NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
    Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
    Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.28mW/C
    Total Device Dissipation (TC = +25C), PD
    NTE123A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
    Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.85mW/C
    NTE159M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
    Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.3mW/C
    Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C

    Electrical Characteristics: (TA = 25C unless otherwise specified)


    Parameter

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    40

    60

    75

    60

    VCE = 60V, VEB(off) = 3V

    10

    nA

    VCE = 30V, VBE = 500mV

    50

    nA

    VCB = 60V, IE = 0

    0.01

    VCB = 60V, IE = 0, TA = +150C

    10

    VCB = 50V, IE = 0

    0.01

    VCB = 50V, IE = 0, TA = +150C

    10

    VEB = 3V, IC = 0

    10

    nA

    VCE = 60V, VEB(off) = 3V

    20

    nA

    VCE = 30V, VEB(off) = 500mV

    50

    nA

    VCE = 10V IC = 0.1mA, Note 1

    35

    IC = 1mA

    50

    IC = 10mA, Note 1

    75

    IC = 10mA, TA = 55C

    35

    IC = 150mA, Note 1

    100

    300

    VCE = 1V, IC = 150mA, Note 1

    50

    VCE = 10V IC = 500mA, Not e 1

    40

    IC = 0.1mA

    75

    IC = 1mA

    100

    IC = 10mA

    100

    IC = 150mA, Note 1

    100

    300

    IC = 500mA, Note 1

    50

    IC = 150mA, IB = 15mA, Note 1

    0.3

    IC = 500mA, IB = 50mA, Note 1

    1.0

    IC = 150mA, IB = 15mA, Note 1

    0.4

    IC = 500mA, IB = 50mA, Note 1

    1.6

    OFF Characteristics
    CollectorEmitter Breakdown Voltage
    NTE123A

    V(BR)CEO

    IC = 10mA, IB = 0

    NTE159M
    CollectorBase Breakdown Voltage
    NTE123A

    V(BR)CBO

    IC = 10A, IE = 0

    NTE159M
    EmitterBase Breakdown Voltage
    NTE123A

    V(BR)EBO

    IE = 10A, IC = 0

    NTE159M
    Collector Cutoff Current
    NTE123A

    ICEX

    NTE159M
    Collector Cutoff Current
    NTE123A

    ICBO

    NTE159M

    Emitter Cutoff Current (NTE123A Only)


    Base Cutoff Current
    NTE123A

    IEBO
    IBL

    NTE159M
    ON Characteristics
    DC Current Gain
    NTE123A

    hFE

    NTE159M

    CollectorEmitter Saturation Voltage


    NTE123A

    NTE159M

    VCE(sat)

    Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.

    Electrical Characteristics (Contd): (TA = 25C unless otherwise specified)


    Parameter

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    IC = 150mA, IB = 15mA, Note 1

    0.6

    1.2

    IC = 500mA, IB = 50mA, Note 1

    2.0

    IC = 150mA, IB = 15mA, Note 1

    1.3

    IC = 500mA, IB = 50mA

    2.6

    300

    MHz

    200

    MHz

    VCB = 10V, IE = 0, f = 100kHz

    pF

    VBE = 0.5V IC = 0, f = 100kHz

    25

    pF

    VBE = 2V

    30

    pF

    2.0

    8.0

    0.25

    1.25

    x 104

    x 104

    50

    300

    75

    375

    35

    mhos

    IC = 10mA

    25

    200

    mhos

    IE = 20mA, VCB = 20V, f = 31.8MHz

    150

    ps

    ON Characteristics (Contd)
    BaseEmitter Saturation Voltage
    NTE123A

    VBE(sat)

    NTE159M
    SmallSignal Characteristics
    Current GainBandwidth Product
    NTE123A

    fT

    NTE159M

    IC = 50mA

    Output Capacitance

    Cobo

    Input Capactiance
    NTE123A

    Cibo

    NTE159M
    Input Impedance (NTE123A Only)

    IC = 20mA

    hie

    IC = 1mA

    VCE = 20V, f = 100MHz,


    Note 2

    VCE = 10V, f = 1kHz

    IC = 10mA
    Voltage Feedback Ratio
    (NTE123A Only)

    hre

    SmallSignal Current Gain


    (NTE123A Only)

    hfe

    Output Admittance (NTE123A Only)

    hoe

    IC = 1mA

    VCE = 10V, f = 1kHz

    IC = 10mA
    IC = 1mA

    VCE = 10V, f = 1kHz

    IC = 10mA
    IC = 1mA

    VCE = 10V, f = 1kHz

    CollectorBase Time Constant


    (NTE123A Only)

    rbCc

    Noise Figure (NTE123A Only)

    NF

    IC = 100A, VCE = 10V, RS = 1k,


    f = 1kHz

    dB

    Re(hie)

    IC = 20mA, VCE = 20V, f = 300MHz

    60

    VCC = 30V, VBE(off) = 500mV,


    IC = 150mA, IB1 = 15mA

    10

    ns

    25

    ns

    VCC = 30V, IC = 150mA,


    IB1 = IB2 = 15mA

    225

    ns

    60

    ns

    VCC = 30V, IC = 150mA,


    IB1 = 15mA

    26

    45

    ns

    10

    ns

    20

    40

    ns

    70

    100

    ns

    50

    80

    ns

    20

    30

    ns

    Real Part of CommonEmitter High


    Frequency Input Impedance
    (NTE123A Only)
    Switching Characteristics
    NTE123A
    Delay Time

    td

    Rise Time

    tr

    Storage Time

    ts

    Fall Time

    tf

    NTE159M
    TurnOn Time

    ton

    Delay Time

    td

    Rise Time

    tr

    TurnOff Time

    toff

    Storage Time

    ts

    Fall Time

    tf

    VCC = 6V, IC = 150mA,


    IB1 = IB2 = 15mA

    Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%.


    Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity.

    .230 (5.84) Dia Max


    .195 (4.95) Dia Max

    .210 (5.33)
    Max

    .030 (.762) Max

    .500
    (12.7)
    Min

    .018 (0.45)
    Base
    Emitter

    Collector

    45

    .041 (1.05)

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