Datasheet

AC/DC Drivers

PWM type DC/DC converter IC

Included 650V MOSFET
BM2Pxx4 Series
General Description Features
The PWM type DC/DC converter (BM2Pxx4 Series)  PWM frequency : 65kHz
for AC/DC provide an optimum system for all products  PWM current mode method
that include an electrical outlet.  Burst operation when load is light
This IC supports both isolated and non-isolated  Frequency reduction function
devices, enabling simpler design of various types of  Built-in 650V start circuit
low-power electrical converters.  Built-in 650V switching MOSFET
This IC built in a HV starter circuit that tolerates  VCC pin under voltage protection
650V, it contributes to low-power consumption.  VCC pin overvoltage protection
With current detection resistors as external devices, a  SOURCE pin Open protection
higher degree of design freedom is achieved. Since  SOURCE pin Short protection
current mode control is utilized, current is restricted in  SOURCE pin Leading-Edge-Blanking function
each cycle and excellent performance is demonstrated  Per-cycle over current protection circuit
in bandwidth and transient response.  Soft start
The switching frequency is 65 kHz. At light load, the  Secondary Over current protection circuit
switching frequency is reduced and high efficiency is
achieved. Package W(Typ.) x D(Typ.) x H(Max.)
A frequency hopping function is also on chip, which DIP7K 9.27mm x 6.35mm x 8.63mm
contributes to low EMI. Pitch 2.54mm(Typ.)
We can design easily, because this IC includes the DIP7F 9.20mm x 6.35mm x 7.60mm
switching MOSFET. Pitch 2.54mm(Typ.)
Basic specifications
 Operating Power Supply Voltage Range:
VCC 8.9V to 26.0V DRAIN: to 650V
 Operating Current: Normal Mode
BM2P014: 0.950mA (Typ.)
BM2P034: 0.775mA (Typ.)
BM2P054: 0.600mA (Typ.)
BM2P094: 0.500mA (Typ.) Applications
Burst Mode: 0.400mA (Typ.) AC adapters and household appliances (vacuum
 Oscillation Frequency: 65kHz (Typ.) cleaners, humidifiers, air cleaners, air conditioners, IH
 Operating Temperature: - 40 C to +105 C cooking heaters, rice cookers, etc.)
 MOSFET ON Resistance:
BM2P014: 1.4Ω (Typ.) Line Up
BM2P034: 2.4Ω (Typ.)
BM2P054: 4.0Ω (Typ.) Product MOSFET ON resistor
BM2P094: 8.5Ω (Typ.) BM2P014 1.4Ω
Application circuit BM2P034 2.4Ω
BM2P054 4.0Ω
BM2P094 8.5Ω
+
FUSE

AC Diode
Filter Bridge
85-265Vac
-

7 6 5
DRAIN DRAIN VCC

ERROR
SOURCE N.C. GND FB AMP
1 2 3 4

Figure 1. Application circuit

○Product structure: Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
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Absolute Maximum Ratings (Ta=25C )

Parameter Symbol Rating Unit Conditions
Maximum applied voltage 1 Vmax1 -0.3 to 30 V VCC
Maximum applied voltage 2 Vmax2 -0.3 to 6.5 V SOURCE, FB
Maximum applied voltage 3 V max3 650 V DRAIN
PW=10us, Duty cycle=1%
Drain current pulse IDP 10.40 A
(BM2P014)
PW=10us, Duty cycle=1%
Drain current pulse IDP 5.20 A
(BM2P034)
PW=10us, Duty cycle=1%
Drain current pulse IDP 2.60 A
(BM2P054)
PW=10us, Duty cycle=1%
Drain current pulse IDP 1.30 A
(BM2P094)
Allowable dissipation Pd 2000 mW
o
Operating temperature range Topr -40 to +105 C
o
MAX junction temperature TJMAX 150 C
o
Storage temperature range Tstr -55 to +150 C
(Note1): When mounted (on 74.2 mm × 74.2 mm x 1.6 mm thick, glass epoxy on double-layer substrate).
Reduce to 16 mW/C when Ta = 25C or above.

Operating Conditions (Ta=25C )

Parameter Symbol Rating Unit Conditions
Power supply voltage range 1 VCC 8.9 to 26.0 V VCC pin voltage
Power supply voltage range 2 VDRAIN to 650 V DRAIN pin voltage

Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25C, VCC = 15 V)

Specifications
Parameter Symbol Unit Conditions
Min Typ Max

[MOSFET Block]
Between drain and
V(BR)DDS 650 - - V ID=1mA / VGS=0V
source voltage
Drain leak current IDSS - - 100 uA VDS=650V / VGS=0V
ID=0.25A / VGS=10V
On resistance RDS(ON) - 1.4 2.0 Ω
(BM2P014)
ID=0.25A / VGS=10V
On resistance RDS(ON) - 2.4 3.6 Ω
(BM2P034)
ID=0.25A / VGS=10V
On resistance RDS(ON) - 4.0 5.5 Ω
(BM2P054)
ID=0.25A / VGS=10V
On resistance RDS(ON) - 8.5 12.0 Ω
(BM2P094)

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Electrical Characteristics of Control IC part (Unless otherwise noted, Ta = 25C, VCC = 15 V)

Specifications
Parameter Symbol Unit Conditions
Min Typ Max
[Circuit current]
BM2P014 FB=2.0V
Circuit current (ON) 1 ION1 700 950 1200 μA
( at pulse operation)
BM2P034 FB=2.0V
Circuit current (ON) 1 ION1 550 775 1050 μA
(at pulse operation)
BM2P054 FB=2.0V
Circuit current (ON) 1 ION1 410 600 790 μA
(at pulse operation)
BM2P094 FB=2.0V
Circuit current (ON) 1 ION1 350 500 650 μA
(at pulse operation)
Circuit current (ON) 2 ION2 - 400 500 μA FB=0.0V(at burst operation)
[VCC protection function]
VCC UVLO voltage 1 VUVLO1 12.50 13.50 14.50 V VCC rises
VCC UVLO voltage 2 VUVLO2 7.50 8.20 8.90 V VCC falls
VCC UVLO hysteresis VUVLO3 - 5.30 - V VUVLO3= VUVLO1- VUVLO2
VCC OVP voltage 1 VOVP1 26.0 27.5 29.0 V VCC rises
VCC OVP voltage 2 VOVP2 23.5 V VCC falls
Latch released VCC voltage VLATCH - VUVLO2-0.5 - V
VCC Recharge start voltage VCHG1 7.70 8.70 9.70 V
VCC Recharge stop voltage VCHG2 12.00 13.00 14.00 V
Latch mask time TLATCH 50 100 150 us
Thermal shut down temperature TSD 118 145 - C Control IC
[PWM type DCDC driver block]
Oscillation frequency 1 FSW1 60 65 70 KHz FB=2.00V
Oscillation frequency 2 FSW2 20 25 30 KHz FB=0.40V
Frequency hopping width 1 FDEL1 - 4.0 - KHz FB=2.0V
Hopping fluctuation frequency FCH 75 125 175 Hz
Soft start time 1 TSS1 0.30 0.50 0.70 ms
Soft start time 2 TSS2 0.60 1.00 1.40 ms
Soft start time 3 TSS3 1.20 2.00 2.80 ms
Soft start time 4 TSS4 4.80 8.00 11.20 ms
Maximum duty Dmax 68.0 75.0 82.0 %
FB pin pull-up resistance RFB 23 30 37 kΩ
ΔFB / ΔCS gain Gain - 4.00 - V/V
FB burst voltage VBST 0.300 0.400 0.500 V FB falls
FB voltage of
VDLT 1.100 1.250 1.400 V
starting Frequency reduction mode
FB OLP voltage 1a VFOLP1A 2.60 2.80 3.00 V Overload is detected (FB rise)
FB OLP voltage 1b VFOLP1B - 2.60 - V Overload is detected (FB drop)
FB OLP ON timer TFOLP1 40 64 88 ms
FB OLP Start up timer TFOLP1b 26 32 38 ms
FB OLP OFF timer TFOLP2 358 512 666 ms
[Over current detection block]
Overcurrent detection voltage VCS 0.380 0.400 0.420 V Ton=0us
Overcurrent detection voltage SS1 VCS_SS1 - 0.100 - V 0[ms] ~ TSS1[ms]
Overcurrent detection voltage SS2 VCS_SS2 - 0.150 - V TSS1 [ms] ~ TSS2 [ms]
Overcurrent detection voltage SS3 VCS_SS3 - 0.200 - V TSS2 [ms] ~ TSS3[ms]
Overcurrent detection voltage SS4 VCS_SS4 - 0.300 - V TSS3 [ms] ~ TSS4 [ms]
Leading Edge Blanking Time TLEB - 250 - ns
Over current detection AC Voltage
KCS 12 20 28 mV/us
compensation factor
SOURCE pin
VCSSHT 0.020 0.050 0.080 V
short protection voltage
[Start circuit block]
Start current 1 ISTART1 0.100 0.500 1.000 mA VCC= 0V
Start current 2 ISTART2 1.000 3.000 6.000 mA VCC=10V
Inflow current from Drain pin
OFF current ISTART3 - 10 20 uA after UVLO released UVLO.
When MOSFET is OFF
Start current switching voltage VSC 0.800 1.500 2.100 V

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PIN DESCRIPTIONS

Table 1 Pin Description

ESD Diode
NO. Pin Name I/O Function
VCC GND
1 SOURCE I/O MOSFET SOURCE pin ○ ○
2 N.C. - - - -
3 GND I/O GND pin ○ -
4 FB I Feedback signal input pin - ○
5 VCC I Power supply input pin - ○
6 DRAIN I/O MOSFET DRAIN pin - -
7 DRAIN I/O MOSFET DRAIN pin - -

I/O Equivalent Circuit Diagram

7 DRAIN 6 DRAIN 5 VCC

DRAIN DRAIN

Internal Internal VCC

Circuit Circuit

Internal MOSFET Internal MOSFET

SOURCE SOURCE

1 SOURCE 2 N.C. 3 GND 4 FB

VREF
VREF

GND R FB
SOURCE FB

Figure 2 I/O Equivalent Circuit Diagram

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Block Diagram

VH
+ FUSE
VO

AC Diode CM
Filter
Bridge Vs

- Cvcc

VCC DRAIN
VCC DRAIN DRAIN
DRAIN
5 6 7

VCC UVLO
+
13.5V - Starter
/ 8.2V 4.0V
VCC OVP Line Reg
+
-

12V Clamp 10uA

Circuit
27.5V/
Internal Block
23.5V

R Q DRIVER

PWM Control
4.0V
4.0V
30k
FB OLP

4 - 64ms
32ms 1M
+ Timer Current
Limiter
SOURCE
Leading Edge
Burst + Blanking 1
Comparator - (typ=250ns)
-
+
Rs

AC Input
Soft Start
Compensation
PWM
Comparator MAX
- DUTY
+ GND
Frequency 3
OSC Hopping
+
(65kHz)

Slope
Compensation

FeedBack
With
Isolation

Figure 3. Block Diagram

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Description of Blocks
(1) Start circuit (DRIAN: 6,7pin)
This IC built in Start circuit (tolerates 650V). It enables to be low standby mode electricity and high speed starting.
After starting, consumption power is idling current ISTART3 (typ=10uA ) only.
Reference values of Starting time are shown in Figure-7. When Cvcc=10uF it can start less than 0.1 sec.

+ FUSE

AC Diode
85- 265 Vac Bridge

DRAIN

Starter

SW1 VCC

Cvcc

+
-
VCCUVLO

Figure 4. Block diagram of start circuit

1.0
ISTART2 0.9
0.8
Start Up Current [mA]

0.7
Start Time [s]

0.6
0.5
0.4
0.3
0.2
0.1
ISTART1 0.0
ISTART3 0 5 10 15 20 25 30 35 40 45 50
0 Vsc 10V V UVLO1 CVCC [μF]
VCC Voltage[V]
Figure 5. Start current vs VCC voltage Figure 6. Start time (reference value)

* Start current flows from the DRAIN pin

ex) Consumption power of start circuit only when the Vac=100V

PVH=100V*√2*10uA=1.41mW

ex) Consumption power of start circuit only when the Vac=240V

PVH=240V*√2*10uA=3.38mW

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(2) Start sequences

(Soft start operation, light load operation, and auto recovery operation during overload protection)
Start sequences are shown in Figure 7. See the sections below for detailed descriptions.

VH

VCC=13.5V

VCC(1pin) VCC=8.2V

Within FB OLP ON
32ms 64ms
Internal REF
Pull Up

FB(8pin)

Vout Over Load

Normal Load

Light LOAD
Iout
Burst mode
Switching
stop
Switing
Switching

Soft
Start

A BC D E F GH I

Figure 7. Start sequences Timing Chart

A: Input voltage VH is applied

B: This IC starts operation when VCC pin voltage rises and VCC > VUVLO1 (13.5 V typ).Switching function starts when
other protection functions are judged as normal. Until the secondary output voltage becomes constant level, VCC
voltage drops because of the VCC consumption current. VCC recharge function start if VCC voltage < VCHG1 (8.7V
typ )
C: With the soft start function, over current limit value is restricted to prevent any excessive rise in voltage or current.
D: When the switching operation starts, VOUT rises.The output voltage become to stable state, VCC voltage also
become to stable state through auxiliary winding.Please set the rated voltage within the TFOLP1b period (32ms typ)
from VCC voltage > VUVLO1.
E: During a light load, if it reaches FB voltage < VBST (= 0.4Vtyp), the IC starts burst operation to keep power
consumption low.During burst operation, it becomes low-power consumption mode.
F: When the FB Voltage＞VFOLP1A (=2.8V typ ), it becomes a overload operation.
G: When FB pin voltage keeps VFOLP1A (= 2.8V typ) at or above TFOLP1 (64ms typ), the overload protection function is
triggered and switching stops 64ms later. if the FB pin voltage becomes FB<VFOLP1B even once, the IC’s FB OLP
timer is reset.
H: If the VCC voltage drops to VCC < VUVLO2 (8.2Vtyp) or below, restart is executed.
I: The IC’s circuit current is reduced and the VCC pin value rises. (Same as B)

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(3) VCC pin protection function

This IC built in VCC low voltage protection function VCCUVLO (Under Voltage Lock Out), over voltage protection
function VCC OVP (Over Voltage Protection) and VCC charge function that operates in case of dropping the VCC
voltage.
VCC UVLO and VCC OVP monitor VCC pin and prevent VCC pin from destroying switching MOSFET at abnormal
voltage.
VCC charge function stabilizes the secondary output voltage by charging from the high voltage line by start circuit at
dropping the VCC voltage.

(3-1) VCC UVLO / VCC OVP function

VCCUVLO is auto recovery protection. VCCOVP is auto recovery protection. And they have voltage hysteresis.
Refer to the operation figure-8.
Switching is stopped by the VCCOVP function when VCC pin voltage > Vovp1 (typ=27.5V), and Switching is
restart when VCC pin voltage < Vovp2 (typ=23.5V)

VH

OVP1 V OVP1
VVovp1=27.5Vtyp
VVovp2=23.5Vtyp
OVP2 V OVP2

VUVLO1 V UVLO1
VCCuvlo1=13.5Vtyp
VCC
VVchg2=13.0Vtyp
CHG2 V CHG2

VVchg1= V
CHG1 8.7Vtyp
CHG1
VUVLO2 =V
VCCuvlo2 8.2Vtyp
UVLO2

ON ON
Time

OFF
VCC UVLO

ON

VCC OVP OFF OFF

ON ON

VCC Charge OFF

Function

ON

OUT OFF
Switching
OFF

Time
A B C D E F G H I J A

Figure 8. VCC UVLO / OVP Timing Chart

A: DRAIN voltage input, VCC pin voltage starts rising.

B: VCC>VUVLO1, DC/DC operation starts
C: VCC< VCHG1, VCC charge function operates and the VCC voltage rises.
D: VCC > VCHG2, VCC charge function is stopped.
E: VCC > VOVP1, continues TLATCH (typ =100us), switching is stopped by the VCCOVP function.
F: VCC < VOVP2, Switching operation restarts
G: VH is OPEN.VCC Voltage is fall.
H: Same as C.
I: Same as D.
J: VCC<VUVLO2, Switching is stopped by the VCC UVLO function

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(3-2) VCC Charge function

After VCC charge function operates once the VCC pin >VUVLO1 and the DC/DC operation starts then the VCC
pin voltage drops to <VCHG1. At that time the VCC pin is charged from DRAIN pin through start circuit.
By this operation, this IC doesn’t occur to start failure.
When VCC pin voltage rises to VCC >VCHG2, charge is stopped. The operations are shown in figure 9.

VH

VUVLO1
VCHG2
VCC VCHG1
VUVLO2

Switching

VH charge
charge charge charge charge

OUTPUT
voltage

A B C D E F G H
Figure 9. Charge operation VCC pin charge operation

A: DRAIN pin voltage rises, charge starts to VCC pin by the VCC charge function.
B: VCC > VUVLO1, VCC UVLO function releases, VCC charge function stops, DC/DC operation starts.
C: When DC/DC operation starts, the VCC voltage drops.
D: VCC < VCHG1, VCC recharge function operates and VCC pin voltage rises.
E: VCC > VCHG2, VCC recharge function stops.
F: VCC < VCHG1, VCC recharge function operates and VCC pin voltage rises.
G: VCC > VCHG2, VCC recharge function stops.
H: After start of output voltage finished, VCC is charged by the auxiliary winding VCC pin stabilizes.

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(4) DCDC driver (PWM comparator, frequency hopping, slope compensation, OSC, burst)
This IC is current mode PWM control.
An internal oscillator sets a fixed switching frequency (65kHz typ).
This IC is integrated switching frequency hopping function which changes the switching frequency to fluctuate as
shown in Figure 10 below.
The fluctuation cycle is 125 Hz typ.

Switching Frequency
[kHz]
500us

69
68
67
66
65
64
63
62
61

125 Hz(8ms)

Time
Figure 10. Frequency hopping function

Max duty cycle is fixed as 75% (typ) and MIN pulse width is fixed as 400 ns (typ).
With current mode control, when the duty cycle exceeds 50% sub harmonic oscillation may occur.
As a countermeasure to this, this IC is built in slope compensation circuits.

This IC is built in burst mode circuit and frequency reduction circuit to achieve lower power consumption, when the
load is light.
FB pin is pull up by RFB (30 kΩ typ).
FB pin voltage is changed by secondary output voltage (secondary load power).
FB pin is monitored, burst mode operation and frequency detection start.

Figure 11 shows the FB voltage, and switching frequency, DCDC operation

• mode1 : Burst operation

• mode2 : Frequency reduction operation.
• mode3 : Fixed frequency operation.(operate at the max frequency)
• mode4 : Over load operation.(detect the over load state and stop the pulse operation)

Y
mode1 mode2 mode3 mode4

65kHz

25kHz

X
0.40V 1.25V 2.00V 2.80V FB [V]

Figure 11. Switching operation state changes by FB pin voltage

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(5) Over Current limiter

This IC is built in Over Current limiter per cycle. If the SOURCE pin exceeds a certain voltage, switching is stopped.
It is also built in AC voltage compensation function. This is the function which compensates the maximum power as
the AC voltage’s change by increasing over current limiter with time.

Shown in figure-12, 13, and 14.

65kHz(15.3us) 65kHz(15.3us)

ON ON
[DC/DC] [DC/DC]
@AC100V OFF OFF OFF
@AC100V OFF

ON ON

[DC/DC] OFF OFF [DC/DC] OFF OFF

@AC240V @AC100V

Iepak(AC)@Vin=240V

Iepak(AC)@Vin=240V
Iepak(AC)@Vin=100V Iepak(AC)@Vin=100V
Iepak(DC)= included conpensation
Iepak(DC)＝Constant
Tdelay Tdelay Tdelay

Tdelay
Primary Peak Current
Primary Peak Current

Figure 12. No AC voltage compensation function Figure13. built-in AC compensation voltage

Primary peak current is decided as the formula below.

Primary peak current: Ipeak = Vs./Rs + Vdc/Lp*Tdelay

Vcs: Over current limiter voltage internal IC, Rs: Current detection resistance, Vdc input DC voltage, Lp: Primary
inductance,
Tdelay: delay time after detection of over current limiter
Y

CS Limitter[V]

0.704V

+20mV/us

0.552V

0.400V

X
0.0 7.6us 15.3us Time [us]

Figure 14. Over current limiter voltage

(6) L.E.B period

When the driver MOSFET is turned ON, surge current occurs at each capacitor component and drive current.
Therefore, because SOURCE pin voltage rises temporarily, the detection errors may occur in the over current limiter
circuit.
To prevent detection errors, DRAIN is switched from high to low and the SOURCE signal is masked for 250 ns by the
on-chip LEB (Leading Edge Blanking) function.

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(7) SOURCE pin (1pin) short protection function

When the SOURCE pin (1pin) is shorted, this IC is over heat.
This IC built in short protection function to prevent destroying.

(8) SOURCE pin (1pin) open protection

If the SOURCE pin becomes OPEN this IC may be damaged.
To prevent to be damaged, this IC built in OPEN protection circuit (auto recovery protection ).

(9) Output over load protection function (FB OLP Comparator )

The output overload protection function monitors the secondary output load status at the FB pin, and stops switching
when an overload occurs. In case of an overload, the output voltage is reduced and current no longer flows to the
photo coupler, so the FB pin voltage rises. When the FB pin voltage > VFOLP1A (2.8 V typ) continuously for the period
TFOLP1 (64ms typ), it is judged as an overload and stops switching.
When the FB pin > VFOLP1A (2.8 V typ), if the voltage goes lower than VFOLP1B (2.6V typ) during the period TFOLP1 (64ms
typ), the overload protection timer is reset. The switching operation is performed during this period TFOLP1 (64ms typ).
At startup, the FB voltage is pulled up to the IC’s internal voltage, so operation starts at a voltage of V FOLP1A (2.8 V typ)
or above. Therefore, at startup the FB voltage must be set to go to VFOLP1B (2.6 V typ) or below during the period TFOLP1
(64ms typ), and the secondary output voltage’s start time must be set within the period TFOLP1 (64ms typ) following
startup of the IC.
Recovery from the once detection of FBOLP, after the period T FOLP2 (512 ms typ)

VFOLP 1A
FB

VH
charge
charge charge
64ms 64ms

Switching

512ms 512ms
VUVLO 1
VCHG 2

VCC VCHG1
VUVLO 2

A B C D E F G H
Figure 15. Over load protection (Auto recovery)

A: The FBOLP comparator detects over load for FB>VFOLP1A

B: If the State of A continues for the period TFOLP1 (64ms typ), it is judged as an overload and stops switching after 64ms.
C: While switching stops for the over load protection function, the VCC pin voltage drops and VCC pin voltage reaches <
VCHG1, the VCC charge function operates so the VCC pin voltage rises.
D: VCC charge function stops when VCC pin voltage > VCHG2
E: If TFOLP2 (typ =512ms ) go on from B point, Switching function starts on soft start.
F: If TFOLP1 (typ=64ms ) go on from E point to continues a overload condition (FB>VFOLP1A), Switching function stops at F
point.
G: While switching stops VCC pin voltage drops to < VCHG1, VCC charge function operates and VCC pin voltage rises.
H: If VCC pin (5pin) voltage becomes over VCHG2 by the VCC charge function, VCC charge function operation stops.

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Operation mode of protection circuit

Operation mode of protection functions are shown in table2.

Table2 Operation mode of protection circuit

Function Operation mode

VCC Under Voltage Locked Out Auto recovery

VCC Over Voltage Protection Auto recovery
TSD Latch (with 100us timer )
FB Over Limited Protection Auto recovery (with 64ms timer )
SOURCE Open Protection Auto recovery

Sequence
The sequence diagram is show in Fig 16.
All condition transits OFF Mode VCC<8.2V

VCC<8.2V
ALL MODE OFF MODE

VCC>13.5V

Soft Start 1

Time >0. 5ms

Soft Start 2

Time>1.0 ms

Soft Start 3

Time >2.0 ms
VCC<7.7V
VCC OVP Soft Start
( Pulse Stop ) SOURCE OPEN
( Pulse Stop )
Time >8.0ms
VCC<23. 5V NORMAL
FBOLP OPEN
OFF TIMER
VCC >27.5V
( 512 ms) Temp>145℃
LATCH OFF MODE
Normal MODE
( Pulse Stop )

FB>2.80V

FB>2.80 V FB<0.40V FB> 0.40 V

FB<2.60V
(64ms) OLP MODE
PULSE OFF
(Pulse Stop )
Burst MODE
( Pulse OFF )

Figure 16. The sequence diagram

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BM2Pxx4 Series

Thermal loss
The thermal design should set operation for the following conditions.
(Since the temperature shown below is the guaranteed temperature, be sure to take a margin into account.)

1. The ambient temperature Ta must be 105°C or less.

2. The IC’s loss must be within the allowable dissipation Pd.

The thermal abatement characteristics are as follows.

(PCB: 74.2 mm × 74.2mm × 1.6 mm, mounted on glass epoxy on double-layer substrate)

3000

2500

2000

1500
Pd[mW]

1000

500

0
0 25 50 75 100 125 150
Ta[℃]

Figure 17. Thermal Abatement Characteristics

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BM2Pxx4 Series

Ordering Information

B M 2 P x x 4

MOSFET ON Resistor
01: 1.4 Ω
03: 2.4 Ω
05: 4.0 Ω
09: 8.5 Ω

Making Diagram

DIP7K (TOP VIEW) DIP7F (TOP VIEW)

Part Number Marking Part Number Marking

LOT Number LOT Number

Part Number Marking Product Name MOSFET ON resistor

BM2P014 BM2P014 1.4 Ω
BM2P034 BM2P034 2.4 Ω
BM2P054 BM2P054 4.0 Ω
BM2P094 BM2P094 8.5 Ω

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BM2Pxx4 Series

Physical Dimension and Packing Information

Package Name DIP7K

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BM2Pxx4 Series

Physical Dimension and Packing Information

Package Name DIP7F

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BM2Pxx4 Series

Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Separate the GND and supply lines of the
digital and analog blocks to prevent noise in the GND and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to GND at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.

3. GND Voltage
Ensure that no pins are at a voltage below that of the GND pin at any time, even during transient condition.

4. GND Wiring Pattern

When using both small-signal and large-current GND traces, the two GND traces should be routed separately but
connected to a single GND at the reference point of the application board to avoid fluctuations in the small-signal
GND caused by large currents. Also ensure that the GND traces of external components do not cause variations on
the GND voltage. The GND lines must be as short and thick as possible to reduce line impedance.

5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.

6. Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.

7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of GND wiring, and routing of connections.

8. Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

9. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, GND the IC during assembly and use similar precautions during
transport and storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to GND, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.

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Operational Notes – continued

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or GND line.

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor Transistor (NPN)
Pin A Pin B B Pin B
C
Pin A E

P B C
P+ P+ P+ N P P+
N N N N Parasitic N N N
E
Elements
Parasitic
P Substrate P Substrate
Elements
GND GND GND GND
Parasitic Parasitic N Region
Elements Elements close-by
Figure 18. Example of monolithic IC structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).

15. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation
should always be within the IC’s power dissipation rating. If however the rating is exceeded for a
continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn
OFF all output pins. The IC should be powered down and turned ON again to resume normal
operation because the TSD circuit keeps the outputs at the OFF state even if the TJ falls below the
TSD threshold.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.

16. Over Current Protection Circuit (OCP)

This IC incorporates an integrated over current protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.

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BM2Pxx4 Series

Revision History
date Rev. No. Revision Point
2012.07.19 001 New Release
P7 An explanation for Figure7
P8 An explanation for VCC_UVLO/VCC_OVP function
An explanation for Figure8
2013.11.18 006 P11 An explanation for Over Current limiter
P12 An explanation for Output over load protection function
An explanation for Figure15
P13 Figure16

P13 Operation mode of protection circuit

2015.05.15 007
P13 Sequence

P5 Figure3
P7 An explanation of Start sequence
P8 An explanation of VCC pin protection function
P8 An explanation of VCC UVLO / VCC OVP function
2015.09.24 008
P9 An explanation of VCC Charge function
P11 An explanation of Over Current Limiter
P12 An explanation of Output over load protection function

P1 An explanation of package height

P2 Format for Electrical Characteristics of MOSFET
P3 Format for Electrical Characteristics of Control IC
P3 An explanation of Thermal shut down temperature
2017.03.07 009
P7 An explanation of Start sequences
P8 An explanation of Figure8
P9 An explanation of VCC pin protection function
P12 An explanation of OUTPUT over load protection function

P1 Add the division of product name

2019.04.22 010 P1 Add the package variation and modify the size
P16, P17 Modify the physical dimension and packing information

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 Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅡb
CLASSⅢ CLASSⅢ
CLASSⅣ CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification

Notice-PGA-E Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.

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 Datasheet

General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.

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