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    2SK30A

    Uploaded by

    joelpalza
    This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. Key details include: 1) It can be used for applications like charge sensors, meter amplifiers, electronic switches, and gain controllers. 2) Absolute maximum ratings include gate to drain voltage of -50V, gate current of 10mA, and allowable power dissipation of 250mW. 3) Electrical characteristics include drain to source cut-off current of 0.3-6.5mA, gate to source cut-off voltage of -0.4 to -5.0V, and input capacitance of 8.2pF. 4) Devices are

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    2SK30A

    Uploaded by

    joelpalza
    54 views1 page
    This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. Key details include: 1) It can be used for applications like charge sensors, meter amplifiers, electronic switches, and gain controllers. 2) Absolute maximum ratings include gate to drain voltage of -50V, gate current of 10mA, and allowable power dissipation of 250mW. 3) Electrical characteristics include drain to source cut-off current of 0.3-6.5mA, gate to source cut-off voltage of -0.4 to -5.0V, and input capacitance of 8.2pF. 4) Devices are

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    This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. Key details include: 1) It can be used for applications like charge sensors, meter amplifiers, electronic switches, and gain controllers. 2) Absolute maximum ratings include gate to drain voltage of -50V, gate current of 10mA, and allowable power dissipation of 250mW. 3) Electrical characteristics include drain to source cut-off current of 0.3-6.5mA, gate to source cut-off voltage of -0.4 to -5.0V, and input capacitance of 8.2pF. 4) Devices are

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    54 views1 page

    2SK30A

    Uploaded by

    joelpalza
    This document summarizes the specifications and characteristics of the LH03 Series Silicon N-Channel Junction FET. Key details include: 1) It can be used for applications like charge sensors, meter amplifiers, electronic switches, and gain controllers. 2) Absolute maximum ratings include gate to drain voltage of -50V, gate current of 10mA, and allowable power dissipation of 250mW. 3) Electrical characteristics include drain to source cut-off current of 0.3-6.5mA, gate to source cut-off voltage of -0.4 to -5.0V, and input capacitance of 8.2pF. 4) Devices are

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    Silicon Junction FETs XIAOSHENG

    Symbol:
    Drain
    LH03 Series of Products interconvert:

    www.datasheet4u.com
    2SK30A Gate
    Source

    Silicon N-Chinnel Junction FET


    Package example:
    „ Application:
    For charge sensor, meter amplifier circuit, rheostat , chopper and
    gain controller for AGC ，electronic switch.

    „ Absolute Maximum Ratings (Ta=25℃)


    Parameter Symbol Ratings Unit
    Gate to Drain voltage VGDO -50 V Package D S G
    Gate to Source voltage VGSO -50 V SC-59
    Gate current IG 10 mA SOT-23

    Allowable power dissipation TO-92S


    PD 250 mW
    Junction Temperature Tj 125 ℃ * TO-92 3 1 2
    Storage Temperature TO-18
    Tstg -55 to +125 ℃

    „ Electrical Characteristics (Ta=25℃)


    Prameter Symbol Conditions min typ max Unit
    Drain to Source cut-off current IDSS VDS = 10V, VGS = 0V 0.3 6.5 mA
    Gate to Source leakage current IGSS VGS= -30V, VDS = 0V -1.0 nA
    Gate to Drain voltage VGDS IG = -100μA，VDS = 0V -50 V
    Gate to Source cut-off voltage VGS(OFF) VDS = 10V, ID = 0.1μA -0.4 -5.0 V
    Forward transfer admittamce | Yfs | VDS= 10V，VGS= 0V，f = 1KHZ 1.2 mS
    Input capacitance (Common Source) Ciss 8.2 pF
    VDS= 10V，VGS= 0V，f = 1MHZ
    Reverse transfer capacitance (Common Source) Crss 2.6 pF

    „ IDSS Rank Classification


    Runk R O Y GR
    IDSS(mA) 0.3 to 0.75 0.6 to 1.4 1.2 to 3.0 2.6 to 6.5
    Marking Symbol 035D 035E 035F 035G

    Xiaosheng Electronic & Telechnology CO. ,LTD.


    Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:xiaosheng_sh@126.com
    Room 206 3rd building 195-16 Tianlin RD. Shanghai China

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