JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

,LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

S8550 TRANSISTOR (PNP)

FEATURES 1. BASE

z Complimentary to S8050 2. EMITTER

3. COLLECTOR
z Collector current: IC=0.5A

MARKING : 2TY

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Max Unit

Collector-base breakdown voltage V(BR)CBO IC = -100μA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V

Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA

Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA

Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA

hFE(1) VCE= -1V, IC= -50mA 120 400

DC current gain
hFE(2) VCE= -1V, IC= -500mA 50

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V

Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V

VCE= -6V, IC= -20mA

Transition frequency fT 150 MHz
f=30MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350

B,Jan,2012
Typical Characteristics S8550
IC —— VCE hFE —— IC
-90
500
-400uA COMMON
-80 EMITTER
-360uA Ta=100℃
Ta=25℃
(mA)

-70
-320uA

hFE
Ta=25℃
-60 -280uA
IC

DC CURRENT GAIN
-240uA
COLLECTOR CURRENT

100
-50
-200uA
-40
-160uA
-30
-120uA

-20 -80uA

-10 IB=-40uA COMMON EMITTER

VCE=-1V
-0 10
-0 -2 -4 -6 -8 -10 -12 -1 -10 -100 -500
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VBEsat —— IC VCEsat —— IC
-1200 -500

COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)

VOLTAGE VCEsat (V)

-800 2 5℃
T a= -100

1 00 ℃
T a=
0℃
10
T a=
℃
25
T a=

β=10 β=10
-400 -10
-1 -10 -100 -500 -1 -10 -100 -500
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE fT —— IC
-500 400
(MHz)
(mA)

-100
fT
IC

TRANSITION FREQUENCY

100
COLLECTOR CURRENT

00 ℃

5℃
T =2
T =1

a
a

-10

COMMON EMITTER
COMMON EMITTER VCE=-6V
VCE=-1V Ta=25℃
-1 10
-0 -300 -600 -900 -1200 -1 -10 -100

BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA)

Cob/Cib —— VCB/VEB PC —— Ta
50 400
COLLECTOR POWER DISSIPATION

Cib 300
(pF)

Cob
PC (mW)

10
C
CAPACITANCE

200

100

f=1MHz
IE=0/IC=0
Ta=25 ℃
1 0
-0.1 -1 -10 -20 0 25 50 75 100 125 150
REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (℃ )

B,Jan,2012