SMD Type MOSFET

Dual P-Channel MOSFET

AO4813 (KO4813)

SOP-8 Unit:mm

■ Features
● VDS (V) = -30V
● ID = -7.1 A (VGS = -10V) 1.50 0.15

+0.04
0.21 -0.02
● RDS(ON) ＜ 25mΩ (VGS = -10V)
● RDS(ON) ＜ 40mΩ (VGS = -4.5V) 1 S2 5 D1
2 G2 6 D1
3 S1 7 D2
4 G1 8 D2

D D

G G

S S

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±20
TA=25℃ -7.1
Continuous Drain Current ID
TA=70℃ -5.6
A
Pulsed Drain Current IDM -40
Avalanche Current IAS, IAR -27
Avalanche Energy L=0.1mH EAS, EAR 36 mJ
TA=25℃ 2
Power Dissipation PD W
TA=70℃ 1.3
t ≤ 10s 62.5
Thermal Resistance.Junction- to-Ambient RthJA
Steady-State 90 ℃/W
Thermal Resistance.Junction- to-Lead RthJL 40
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

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 SMD Type MOSFET

Dual P-Channel MOSFET

AO4813 (KO4813)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
Zero Gate Voltage Drain Current IDSS uA
VDS=-30V, VGS=0V, TJ=55℃ -5
Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=-250uA -1.5 -2.5 V
VGS=-10V, ID=-7.1A 25
Static Drain-Source On-Resistance RDS(On) VGS=-10V, ID=-7.1A TJ=125℃ 33 mΩ
VGS=-4.5V, ID=-5.6A 40
On State Drain Current ID(ON) VGS=-10V, VDS=-5V -40 A
Forward Transconductance gFS VDS=-5V, ID=-7.1A 24 S
Input Capacitance Ciss 1040 1250
Output Capacitance Coss VGS=0V, VDS=-15V, f=1MHz 180 pF
Reverse Transfer Capacitance Crss 125 175
Gate Resistance Rg VGS=0V, VDS=0V, f=1MHz 2 6 Ω
Total Gate Charge (10V) 19
Qg
Total Gate Charge (4.5V) 9.6
VGS=-10V, VDS=-15V, ID=-7.1A nC
Gate Source Charge Qgs 3.6
Gate Drain Charge Qgd 4.6
Turn-On DelayTime td(on) 10
Turn-On Rise Time tr VGS=-10V, VDS=-15V, RL=2.2Ω, 5.5
Turn-Off DelayTime td(off) RGEN=3Ω 26 ns
Turn-Off Fall Time tf 9
Body Diode Reverse Recovery Time trr 11.5
IF= -7.1A, dI/dt= 500A/us
Body Diode Reverse Recovery Charge Qrr 25 nC
Maximum Body-Diode Continuous Current IS -2.5 A
Diode Forward Voltage VSD IS=-1A,VGS=0V -1 V

Note.The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.

■ Marking
4813
Marking
KA****

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SMD Type MOSFET

Dual P-Channel MOSFET

AO4813 (KO4813)
■ Typical Characterisitics
60 40
-10V -7V VDS=-5V
50 -5V
30
40
-4.5V
-ID (A)

-ID(A)
30 20

20 -3.5V
10 125°C 25°C
10
VGS=-3.0V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

-VDS (Volts) -VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

35 1.8
Normalized On-Resistance

30 1.6 VGS=-10V
ID=-7.1A
RDS(ON) (mΩ )

25 VGS=-4.5V 1.4

20 1.2

VGS=-4.5V
15 1
VGS=-10V ID=-5.6A

10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage (Note E) (Note E)

60 1.0E+02
ID=-7.1A
1.0E+01
50
1.0E+00

40
RDS(ON) (mΩ )

125°C 1.0E-01 125°C

-IS (A)

1.0E-02
30
1.0E-03 25°C
20 25°C 1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 SMD Type MOSFET

Dual P-Channel MOSFET

AO4813 (KO4813)
■ Typical Characterisitics
10 1600
VDS=-15V
ID=-7.1A 1400
8
1200 Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
800
4 600
Coss
400
2
200
Crss
0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 TA=25°C
100.0
-IAR (A) Peak Avalanche Current

TA=100°C
TA=150°C

10.0 RDS(ON) 10µs

limited 100µs
-ID (Amps)

10 TA=125°C
1.0
1ms
10ms
0.1 TJ(Max)=150°C
10s
TA=25°C
DC
1 0.0
1 10 100 . 1000 0.01 0.1 1 10 100
Time in avalanche, tA (µ
µs) -VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note Figure 10: Maximum Forward Biased Safe
C)
Operating Area (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0 .0 0 0 0 1 0 .0 0 1 0 .1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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SMD Type MOSFET

Dual P-Channel MOSFET

AO4813 (KO4813)
■ Typical Characterisitics
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=90°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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