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    NPN Silicon RF Power Transistor: Description: ASI 2N3375 Package Style To-60 (Isolated)

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    Andressa Tavares Carvalho
    This document provides a summary of the specifications and features of the ASI 2N3375 NPN silicon RF power transistor. The transistor is designed for applications such as amplifiers, oscillators, and drivers in the VHF-UHF region. It has a maximum collector current of 1.5 A, collector-emitter voltage of 40 V, and power dissipation of 11.6 W at 25°C ambient temperature. Key characteristics include a current gain of at least 10, saturation voltage of 1 V or less, and operating frequencies up to 500 MHz.

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    NPN Silicon RF Power Transistor: Description: ASI 2N3375 Package Style To-60 (Isolated)

    Uploaded by

    Andressa Tavares Carvalho
    27 views1 page
    This document provides a summary of the specifications and features of the ASI 2N3375 NPN silicon RF power transistor. The transistor is designed for applications such as amplifiers, oscillators, and drivers in the VHF-UHF region. It has a maximum collector current of 1.5 A, collector-emitter voltage of 40 V, and power dissipation of 11.6 W at 25°C ambient temperature. Key characteristics include a current gain of at least 10, saturation voltage of 1 V or less, and operating frequencies up to 500 MHz.

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    2n3375

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    This document provides a summary of the specifications and features of the ASI 2N3375 NPN silicon RF power transistor. The transistor is designed for applications such as amplifiers, oscillators, and drivers in the VHF-UHF region. It has a maximum collector current of 1.5 A, collector-emitter voltage of 40 V, and power dissipation of 11.6 W at 25°C ambient temperature. Key characteristics include a current gain of at least 10, saturation voltage of 1 V or less, and operating frequencies up to 500 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    27 views1 page

    NPN Silicon RF Power Transistor: Description: ASI 2N3375 Package Style To-60 (Isolated)

    Uploaded by

    Andressa Tavares Carvalho
    This document provides a summary of the specifications and features of the ASI 2N3375 NPN silicon RF power transistor. The transistor is designed for applications such as amplifiers, oscillators, and drivers in the VHF-UHF region. It has a maximum collector current of 1.5 A, collector-emitter voltage of 40 V, and power dissipation of 11.6 W at 25°C ambient temperature. Key characteristics include a current gain of at least 10, saturation voltage of 1 V or less, and operating frequencies up to 500 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    2N3375

    NPN SILICON RF POWER TRANSISTOR

    DESCRIPTION:
    The ASI 2N3375 is Designed for
    Class A,B,C Amplifier,Oscillator and PACKAGE STYLE TO- 60(ISOLATED)
    Driver Applications Covering the
    VHF-UHF Region.

    FEATURES INCLUDE:
    • Isolated Package

    MAXIMUM RATINGS
    IC 1.5 A
    VCE 40 V
    O
    PDISS 11.6 W @ TC = 25 C
    O O
    TJ -65 C to +200 C
    O O
    TSTG -65 C to +200 C
    1 = EMITTER 2 = BASE
    O
    θJC 15 C/W 3 = COLLECTOR

    CHARACTERISTICS O
    TC = 25 C
    SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
    BVCEO IC = 200 mA 40 V
    BVCEX VBE = -1.5 V IC = 100 mA 65 V
    BVCBO IC = 500 µA 65 V
    ICEO VCE = 30 V 100 µA
    IEBO VEB = 4.0 V 100 µA
    hFE VCE = 5.0 V IC = 250 mA 10 ---
    VCE(SAT) IC = 500 mA IB = 100 mA 1.0 V

    Cob VCB = 30 V f = 1.0 MHz 10 pF


    ft VCE = 28 V IC = 150 mA f = 100 MHz 500 MHz

    Pout 3.0 W
    GP VCE = 28 V Pin = 1.0 W f = 400 MHz dB
    4.8
    η 40 %

    A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
    7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

    Specifications are subject to change without notice.

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