Experiment 1

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Submitted by:
Rosales, Jomar
Professor: Engr Gensen Carino

ACEE5-Lab
EXPERIMENT NO.1
JUNCTION DIODE CHARACTERISTICS
I. OBJECTIVE:
To test a junction diode and measure the effects when it is on forward or reverse bias
condition.
II. DISCUSSION:
The standard symbol for a semiconductor diode is an arrow and bar showing the direction
of current. The arrow is the P-side, and the bar is the N-side. The arrow and bar are generally
marked on the diode. To determine the state of the diode, simply think of it initially as a resistor,
and find the polarity of the voltage across it and the direction of conventional current through it. If
the voltage across it has forward-bias polarity and the current has a direction has matches the arrow
in the symbol, the diode is conducting.
For the most applications, simply the threshold voltage in the forward-bias region and an
open-circuit for applied voltages can define the characteristics of a diode less than the threshold
value.
III. MATERIALS:
1- Variable power supply

1- Digital Tester
1- 2Watt, 200 ohms resistor
1- 1N4001 silicon diode
IV. PROCEDURE:
R
A
V
R
Fig. 1.1 Measuring the effect of forward bias on current flow in diode
1. Construct the circuit shown. Set the supply letting the voltage V to be. Volt. Increase the
voltage from 0.1 Volt steps to maximum of 0.8 Volts. Measure and record the current, if
any, in Table 1.2. Also compute for the forward resistance of the diode.
2. Reverse the diode. Like on forward biased circuit, measure the current and record, if any
with the power supply varying in steps from 0 to 40 Volts. Again, for each condition,
compute for the reverse resistance of the diode.
FORWARD REVERSE
vAK I, mA R, Ω vAK I, mA R, Ω
0 0 0 0 0 o
0.1 0.000189 529.38 5 3.7 x 10^-5 13 500 013.5
0.2 0.001487 134.5 10 4.21 x 10^-5 237 529 691
0.3 0.010122 29.64 15 4.7 x 10^-5 319 067 472
0.4 0.05823 6.87 20 5.22 x 10^-5 382 958 353
0.5 0.217482 2.30 25 5.68 x 10^-5 439 807 892
0.6 0.485478 1.23 30 6.18 x 10^-5 485 303 396
0.7 0.861375 0.81 35 6.70 x 10^-5 521 983 939
0.8 0.1262 0.63 40 7.17 x 10^-5 557 374 765
Table 1.2
3. Remove the diode from the circuit. Measure the forward and reverse resistance
of this diode. Record the result in Table 1.3. Compute the resistance ratio, r, of
his diode.
Diode R (forward), Ω R (reverse), Ω R

65.494 5, 312 81.11
Table 1.3
V. QUESTIONS:
1. Plot a graph of V versus I for both bias conditions of Table 1.2

2. Under what condition will a junction diode turn on? Refer
to your measurement in Table 1.2
Based on the measurements, if the voltage across the diode

isn't negative, it will turn on and conduct current. It'll turn
ON for positive forward bias voltages above 0.7 V. From 0
to 0.7, diode is partially ON. Less than zero gives a
negative reverse bias voltage, and the diode is OFF.
3. Explain how (a) forward-bias, (b) reverse-bias conditions may be

established. Referring to your experiment, explain also how the
resulting current is affected.
➢ In case of forward- bias condition: The positive terminal of the
battery is connected to the p- side and the negative terminal is
connected to the n- side. The applied forward voltage creates an
electric field which acts against the field due to the potential
barrier, this weakens the resultant field and so the barrier height
decreases. This decreased potential barrier allows the flow of
charge carriers across the junction which leads to a low
resistance and thus forward current flows.
➢ In case of reverse- bias condition: The negative terminal of the
battery is connected to the p- side and the positive terminal is
connected to the n- side. The applied reverse voltage creates an
electric field which acts in the same direction as the field due to
the potential barrier, this strengthens the resultant field and so
the barrier height increases. This increased potential barrier
prevents the flow of charge carriers across the junction which
leads to a high resistance and thus no current flows.
4. What portion, at the volt-ampere characteristics curve of the

forward-bias diode is linear.
➢ The portion where or which values are closer to zero.
5. What is the effect of the DC resistance of the diode over this linear portion?
➢ The resistance of diodes does not vary directly and proportional to
the amount of voltage and current applied to them. And diode
resistance does not change in a linear sense, but in a parabolic sense.
But in this case, the higher the DC resistance, the linear its V-I
plotting.
6. Compare the characteristics of silicon and a germanium diode and
determine which is preferred to use for practical application.
➢ At room temperature, Silicon crystal has fewer free electrons

than Germanium crystal. This implies that silicon will have
much smaller collector cut off current than Germanium.
➢ The variation of Collector cut off current with temperature is
less in Silicon compared to Germanium.
➢ The structure of Germanium crystals will be destroyed at
higher temperature. However, Silicon crystals are not easily
damaged by excess heat.
➢ Peak Inverse Voltage ratings of Silicon diodes are greater than
Germanium diodes.
➢ Si is less expensive due to the greater abundance of element.
Hence, Silicon is the preferred and are used in practical
applications instead of Germanium.
7. What is the significance, if any, of the resistance ration of a diode?
➢ Generally, the diodes have a high ratio of reverse to forward
resistance, which makes them essentially unidirectional in function.
0 to 0.3 Voltage (Forward Bias)

0.4 to 0.7 Voltage (Forward Bias)
0.8 Voltage (Forward Bias)
5 to 20 Voltage (Reverse Bias)
25 to 40 Voltage (Reverse Bias)
Forward and Bias Resistance Readings

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Professor: Engr Gensen Carino

1- Variable power supply

Diode R (forward), Ω R (reverse), Ω R

1. Plot a graph of V versus I for both bias conditions of Table 1.2

Based on the measurements, if the voltage across the diode

3. Explain how (a) forward-bias, (b) reverse-bias conditions may be

4. What portion, at the volt-ampere characteristics curve of the

➢ At room temperature, Silicon crystal has fewer free electrons

0 to 0.3 Voltage (Forward Bias)

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