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    Silicon N Channel MOSFET Tetrode BF 998: Features

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    ha
    The document summarizes the specifications and characteristics of the BF 998 silicon N-channel MOSFET tetrode transistor. It is designed for low-noise, gain-controlled input stages up to 1 GHz. The summary provides maximum ratings, packaging information, electrical characteristics including DC parameters, AC parameters such as transconductance and capacitance values, and graphs of characteristics like power gain and noise figure versus gate voltage. Test circuits are shown for evaluating parameters like power gain and noise figure.

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    Silicon N Channel MOSFET Tetrode BF 998: Features

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    ha
    45 views8 pages
    The document summarizes the specifications and characteristics of the BF 998 silicon N-channel MOSFET tetrode transistor. It is designed for low-noise, gain-controlled input stages up to 1 GHz. The summary provides maximum ratings, packaging information, electrical characteristics including DC parameters, AC parameters such as transconductance and capacitance values, and graphs of characteristics like power gain and noise figure versus gate voltage. Test circuits are shown for evaluating parameters like power gain and noise figure.

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    BF998

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    The document summarizes the specifications and characteristics of the BF 998 silicon N-channel MOSFET tetrode transistor. It is designed for low-noise, gain-controlled input stages up to 1 GHz. The summary provides maximum ratings, packaging information, electrical characteristics including DC parameters, AC parameters such as transconductance and capacitance values, and graphs of characteristics like power gain and noise figure versus gate voltage. Test circuits are shown for evaluating parameters like power gain and noise figure.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    45 views8 pages

    Silicon N Channel MOSFET Tetrode BF 998: Features

    Uploaded by

    ha
    The document summarizes the specifications and characteristics of the BF 998 silicon N-channel MOSFET tetrode transistor. It is designed for low-noise, gain-controlled input stages up to 1 GHz. The summary provides maximum ratings, packaging information, electrical characteristics including DC parameters, AC parameters such as transconductance and capacitance values, and graphs of characteristics like power gain and noise figure versus gate voltage. Test circuits are shown for evaluating parameters like power gain and noise figure.

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    © All Rights Reserved
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    of 8

    Silicon N Channel MOSFET Tetrode BF 998

    Features
    ● Short-channel transistor
    with high S/C quality factor
    ● For low-noise, gain-controlled
    input stages up to 1 GHz

    Type Marking Ordering Code Pin Configuration Package1)


    (tape and reel) 1 2 3 4
    BF 998 MO Q62702-F1129 S D G2 G1 SOT-143

    Maximum Ratings
    Parameter Symbol Values Unit
    Drain-source voltage VDS 12 V
    Drain current ID 30 mA
    Gate 1/gate 2 peak source current ± IG1/2SM 10
    Total power dissipation, TS < 76 ˚C Ptot 200 mW
    Storage temperature range Tstg – 55 … + 150 ˚C
    Channel temperature Tch 150

    Thermal Resistance
    Junction - soldering point Rth JS < 370 K/W

    1) For detailed information see chapter Package Outlines.

    Semiconductor Group 1 04.96


    BF 998

    Electrical Characteristics
    at TA = 25 ˚C, unless otherwise specified.
    Parameter Symbol Values Unit
    min. typ. max.

    DC Characteristics
    Drain-source breakdown voltage V(BR) DS 12 – – V
    ID = 10 µA, – VG1S = – VG2S = 4 V
    Gate 1-source breakdown voltage ± V(BR) G1SS 8 – 12
    ± IG1S = 10 mA, VG2S = VDS = 0

    Gate 2-source breakdown voltage ± V(BR) G2SS 8 – 12


    ± IG2S = 10 mA, VG1S = VDS = 0

    Gate 1-source leakage current ± IG1SS – – 50 nA


    ± VG1S = 5 V, VG2S = VDS = 0

    Gate 2-source leakage current ± IG2SS – – 50


    ± VG2S = 5 V, VG1S = VDS = 0

    Drain current IDSS 2 – 18 mA


    VDS = 8 V, VG1S = 0, VG2S = 4 V
    Gate 1-source pinch-off voltage – VG1S(p) – – 2.5 V
    VDS = 8 V, VG2S = 4 V, ID = 20 µA
    Gate 2-source pinch-off voltage – VG2S(p) – – 2
    VDS = 8 V, VG1S = 0, ID = 20 µA

    Semiconductor Group 2
    BF 998

    Electrical Characteristics
    at TA = 25 ˚C, unless otherwise specified.
    Parameter Symbol Values Unit
    min. typ. max.

    AC Characteristics
    Forward transconductance gfs – 24 – mS
    VDS = 8 V, ID = 10 mA, VG2S = 4 V
    f = 1 kHz
    Gate 1 input capacitance Cg1ss – 2.1 2.5 pF
    VDS = 8 V, ID = 10 mA, VG2S = 4 V
    f = 1 MHz
    Gate 2 input capacitance Cg2ss – 1.2 –
    VDS = 8 V, ID = 10 mA, VG2S = 4 V
    f = 1 MHz
    Reverse transfer capacitance Cdg1 – 25 – fF
    VDS = 8 V, ID = 10 mA, VG2S = 4 V
    f = 1 MHz
    Output capacitance Cdss – 1.05 – pF
    VDS = 8 V, ID = 10 mA, VG2S = 4 V
    f = 1 MHz
    Power gain Gps – 28 – dB
    (test circuit 1)
    VDS = 8 V, ID = 10 mA, f = 200 MHz,
    GG = 2 mS, GL = 0.5 mS, VG2S = 4 V
    Power gain Gps – 20 –
    (test circuit 2)
    VDS = 8 V, ID = 10 mA, f = 800 MHz,
    GG = 3.3 mS, GL = 1 mS, VG2S = 4 V
    Noise figure F – 0.6 – dB
    (test circuit 1)
    VDS = 8 V, ID = 10 mA, f = 200 MHz,
    GG = 2 mS, GL = 0.5 mS, VG2S = 4 V
    Noise figure F – 1 –
    (test circuit 2)
    VDS = 8 V, ID = 10 mA, f = 800 MHz,
    GG = 3.3 mS, GL = 1 mS, VG2S = 4 V
    Control range ∆Gps 40 – –
    (test circuit 2)
    VDS = 8 V, VG2S = 4 … – 2 V
    f = 800 MHz

    Semiconductor Group 3
    BF 998

    Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS)


    VG2S = 4 V

    Gate 1 forward transconductance Gate 1 forward transconductance


    gfs1 = f (VG1S) gfs1 = f (VG2S)
    VDS = 8 V, IDSS = 10 mA, f = 1 kHz VDS = 8 V, IDSS = 10 mA, f = 1 kHz

    Semiconductor Group 4
    BF 998

    Gate 1 forward transconductance Gate 1 input capacitance Cg1ss = f (VG1S)


    gfs1 = f (ID) VG2S = 4 V, VDS = 8 V, IDSS = 10 mA,
    VDS = 8 V, IDSS = 10 mA, f = 1 kHz f = 1 MHz

    Gate 2 input capacitance C g2ss = f (VG2S) Output capacitance Cdss = f (VDS)


    VG1S = 0 V, VDS = 8 V VG1S = 0 V, VG2S = 4 V
    IDSS = 10 mA, f = 1 MHz IDSS = 10 mA, f = 1 MHz

    Semiconductor Group 5
    BF 998

    Drain current ID = f (VG1S) Power gain Gps = f (VG2S)


    VDS = 8 V VDS = 8 V, VG1S = 0, IDSS = 10 mA,
    f = 200 MHz (see test circuit 1)

    Noise figure F = f (VG2S) Power gain Gps = f (VG2S)


    VDS = 8 V, VG1S = 0, IDSS = 10 mA, VDS = 8 V, VG1S = 0, IDSS = 10 mA,
    f = 200 MHz (see test circuit 1) f= 800 MHz (see test circuit 2)

    Semiconductor Group 6
    BF 998

    Noise figure F = f (VG2S) Gate 1 input admittance y11s


    VDS = 8 V, VG1S = 0, IDSS = 10 mA, VDS = 8 V, VG2S = 4 V, VG1S = 0,
    f = 800 MHz (see test circuit 2) IDSS = 10 mA (common-source)

    Gate 1 forward transfer admittance y 21s Output admittance y 22s


    VDS = 8 V, VG2S = 4 V, VG1S = 0 VDS = 8 V, VG2S = 4 V, VG1S = 0
    IDSS = 10 mA (common-source) IDSS = 10 mA (common-source)

    Semiconductor Group 7
    BF 998

    Test circuit 1 for power gain and noise figure


    f = 200 MHz, GG = 2 mS, GL = 0.5 mS

    Test circuit 2 for power gain and noise figure


    f = 800 MHz, GG = 3.3 mS, GL = 1 mS

    Semiconductor Group 8

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