® BUT30V

NPN TRANSISTOR POWER MODULE

■ NPN TRANSISTOR
■ HIGH CURRENT POWER BIPOLAR MODULE
■ VERY LOW Rth JUNCTION CASE
■ SPECIFIED ACCIDENTAL OVERLOAD
AREAS
■ FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
■ LOW INTERNAL PARASITIC INDUCTANCE

APPLICATIONS:
Pin 4 not connected
■ MOTOR CONTROL
■ SMPS & UPS

■ WELDING EQUIPMENT

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
V CEV Collector-Emitter Voltage (V BE = -5 V) 200 V
V CEO(sus) Collector-Emitter Voltage (I B = 0) 125 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 100 A
I CM Collector Peak Current (t p = 10 ms) 150 A
IB Base Current 20 A
I BM Base Peak Current (t p = 10 ms) 30 A
P tot Total Dissipation at T c = 25 o C 250 W
V isol Insulation Withstand Voltage (RMS) from All 2500
Four Terminals to External Heatsink
o
T stg Storage Temperature -55 to 150 C
o
Tj Max. Operating Junction Temperature 150 C

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BUT30V

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.5 C/W
R thc-h Thermal Resistance Case-heatsink With Conductive
o
Grease Applied Max 0.05 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = V CEV 1 mA
Current (R BE = 5 Ω) V CE = V CEV T c = 100 o C 5 mA
I CEV Collector Cut-off V CE = V CEV 1 mA
o
Current (V BE = -5V) V CE = V CEV T c = 100 C 4 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
VCEO(sus) * Collector-Emitter I C = 0.2 A L = 25 mH 125 V
Sustaining Voltage V clamp = 125 V
(I B = 0)
h FE ∗ DC Current Gain I C = 100 A VCE = 5 27
V CE(sat) ∗ Collector-Emitter IC = 50 A IB = 2.5 A 0.45 0.9 V
o
Saturation Voltage IC = 50 A IB = 2.5 A T c = 100 C 0.55 1.2 V
IC = 100 A IB = 10 A 0.7 0.9 V
IC = 100 A IB = 10 A T c = 100 o C 0.9 1.5 V
V BE(sat) ∗ Base-Emitter IC = 50 A IB = 2.5 A 1.15 1.4 V
Saturation Voltage IC = 50 A IB = 2.5 A T c = 100 o C 1.1 1.4 V
IC = 100 A IB = 10 A 1.45 1.8 V
IC = 100 A IB = 10 A T c = 100 o C 1.55 1.9 V
di C /dt Rate of Rise of V CC = 300 V RC = 0 tp = 3 µs 270 350 A/µs
On-state Collector I B1 = 15 A T c = 100 o C
V CE (3 µs) Collector-Emitter V CC = 300 V RC = 1 Ω 2.7 3.5 V
Dynamic Voltage I B1 = 15 A T c = 100 o C
VCE (5 µs) Collector-Emitter V CC = 300 V RC = 1 Ω 2 2.5 V
Dynamic Voltage I B1 = 15 A T c = 100 o C
ts Storage Time I C = 100 A V CC = 90 V 1 2 µs
tf Fall Time V BB = -5 V R BB = 0.47 Ω 0.1 0.2 µs
tc Cross-over Time V clamp = 125 V I B1 = 10 A 0.2 0.35 µs
o
L = 45 µH T c = 100 C
V CEW Maximum Collector I CWoff = 150 A I B1 = 10 A 125 V
Emitter Voltage V BB = -5 V V CC = 90 V
Without Snubber L = 30 µH R BB = 0.5 Ω
T c = 125 o C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

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 BUT30V

Safe Operating Areas Thermal Impedance

Derating Curve Collector-emitter Voltage Versus

Base Emitter Resistance

Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage

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BUT30V

Reverse Biased SOA Foward Biased SOA

Reverse Biased AOA Forward Biased AOA

Switching Times Inductive Load Switching Times Inductive Load Versus

Temperature

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 BUT30V

Dc Current Gain Turn-on Switching Test Circuit

(1) Fast electronic switch (2) Non-inductive load

Turn-on Switching Waveforms

Turn-off Switching Test Circuit Turn-off Switching Waveforms

(1) Fast electronic switch (2) Non-inductive load

(3) Fast recovery rectifier

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BUT30V

ISOTOP MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 11.8 12.2 0.465 0.480
A1 8.9 9.1 0.350 0.358
B 7.8 8.2 0.307 0.322
C 0.75 0.85 0.029 0.033
C2 1.95 2.05 0.076 0.080
D 37.8 38.2 1.488 1.503
D1 31.5 31.7 1.240 1.248
E 25.15 25.5 0.990 1.003
E1 23.85 24.15 0.938 0.950
E2 24.8 0.976
G 14.9 15.1 0.586 0.594
G1 12.6 12.8 0.496 0.503
G2 3.5 4.3 0.137 1.169
F 4.1 4.3 0.161 0.169
F1 4.6 5 0.181 0.196
P 4 4.3 0.157 0.169
P1 4 4.4 0.157 0.173
S 30.1 30.3 1.185 1.193

P093A

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 BUT30V

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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