BU808DFI: High Voltage Fast-Switching NPN Power Darlington Transistor

 BU808DFI
HIGH VOLTAGE FAST-SWITCHING

NPN POWER DARLINGTON TRANSISTOR
■ STMicroelectronics PREFERRED
SALESTYPE
■ NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
■ HIGH VOLTAGE CAPABILITY ( > 1400 V )
■ HIGH DC CURRENT GAIN ( TYP. 150 )
■ FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
3
■ LOW BASE-DRIVE REQUIREMENTS 2
■ DEDICATED APPLICATION NOTE AN1184 1
APPLICATIONS
■ COST EFFECTIVE SOLUTION FOR ISOWATT218
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFI is a NPN transistor in monolithic
Darlington configuration. It is manufactured using INTERNAL SCHEMATIC DIAGRAM
Multiepitaxial Mesa technology for cost-effective
high performance.
ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
V CBO Collector-Base Voltage (I E = 0) 1400 V
V CEO Collector-Emitter Voltage (IB = 0) 700 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current (tp < 5 ms) 10 A
IB Base Current 3 A
I BM Base Peak Current (tp < 5 ms) 6 A
o
P t ot Total Dissipation at Tc = 25 C 52 W
V i so l Insulation W ithstand Voltage (RMS) from All 2500 V
Three Leads to Exernal Heatsink
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
April 2002 1/7

BU808DFI
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 2.4 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1400 V 400 µA
Current (V BE = 0)
I EBO Emitter Cut-off Current V EB = 5 V 100 mA
(I C = 0)
V CE(sat )∗ Collector-Emitter IC = 5 A IB = 0.5 A 1.6 V
Saturation Voltage
V BE(s at)∗ Base-Emitt er IC = 5 A IB = 0.5 A 2.1 V
Saturation Voltage
h F E∗ DC Current Gain IC = 5 A V CE = 5 V 60 230
o
IC = 5 A V CE = 5 V T j = 100 C 20
INDUCTIVE LO AD V CC = 150 V IC = 5 A
ts Storage Time I B1 = 0.5 A VBE(off) = -5 V 3 µs
tf Fall Time 0.8 µs
INDUCTIVE LO AD V CC = 150 V IC = 5 A
ts Storage Time I B1 = 0.5 A VBE(off) = -5 V 2 µs
tf Fall Time T j = 100 oC 0.8 µs
VF Diode F orward Voltage I F = 5 A 3 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
2/7
BU808DFI
Derating Curve DC Current Gain
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Power Losses at 16 KHz Switching Time Inductive Load at 16KHz
3/7
BU808DFI
Switching Time Inductive Load at 16KHZ Reverse Biased SOA
BASE DRIVE INFORMATION

In order to saturate the power switch and reduce drive. The test circuit is illustrated in figure 1.
conduction losses, adequate direct base current Inductance L 1 serves to control the slope of the
IB1 has to be provided for the lowest gain hFE at negative base current IB2 to recombine the
100 oC (line scan phase). On the other hand, excess carrier in the collector when base current
negative base current IB2 must be provided to is still present, this would avoid any tailing
turn off the power transistor (retrace phase). phenomenon in the collector current.
Most of the dissipation, in the deflection The values of L and C are calculated from the
application, occurs at switch-off. Therefore it is following equations:
essential to determine the value of IB2 which 1 1 1
minimizes power losses, fall time tf and, L (IC)2 = C (VCEfly)2 ω = 2 πf =
2 2 
√ L C
consequently, Tj. A new set of curves have been
defined to give total power losses, ts and tf as a Where IC= operating collector current, VCEfly=
function of IB2 at both 16 KHz scanning flyback voltage, f= frequency of oscillation during
frequencies for choosing the optimum negative retrace.
4/7
BU808DFI
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
5/7
BU808DFI
ISOWATT218 MECHANICAL DATA
mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
- Weight : 4.9 g (typ.)

- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm P025C/A
6/7
BU808DFI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 2002 STMicroelectronics – Printed in Italy – All Rights Reserved

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7/7

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 BU808DFI

HIGH VOLTAGE FAST-SWITCHING

ABSOLUTE MAXIMUM RATINGS

April 2002 1/7

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Safe Operating Area Thermal Impedance

Derating Curve DC Current Gain

Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

Power Losses at 16 KHz Switching Time Inductive Load at 16KHz

Switching Time Inductive Load at 16KHZ Reverse Biased SOA

BASE DRIVE INFORMATION

Figure 1: Inductive Load Switching Test Circuits.

Figure 2: Switching Waveforms in a Deflection Circuit

ISOWATT218 MECHANICAL DATA

- Weight : 4.9 g (typ.)

 2002 STMicroelectronics – Printed in Italy – All Rights Reserved

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