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    BDX 53 F

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    Noel
    This document provides information about complementary silicon power Darlington transistors BDX53F and BDX54F. It details their applications, descriptions, specifications, ratings, characteristics, packaging and more.

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    © All Rights Reserved
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    BDX 53 F

    Uploaded by

    Noel
    21 views4 pages
    This document provides information about complementary silicon power Darlington transistors BDX53F and BDX54F. It details their applications, descriptions, specifications, ratings, characteristics, packaging and more.

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    bdx53f

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    This document provides information about complementary silicon power Darlington transistors BDX53F and BDX54F. It details their applications, descriptions, specifications, ratings, characteristics, packaging and more.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views4 pages

    BDX 53 F

    Uploaded by

    Noel
    This document provides information about complementary silicon power Darlington transistors BDX53F and BDX54F. It details their applications, descriptions, specifications, ratings, characteristics, packaging and more.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    BDX53F

    ® BDX54F
    COMPLEMENTARY SILICON POWER
    DARLINGTON TRANSISTORS

    ■ STMicroelectronics PREFERRED
    SALESTYPES
    ■ COMPLEMENTARY PNP - NPN DEVICES
    ■ MONOLITHIC DARLINGTON
    CONFIGURATION
    ■ INTEGRATED ANTIPARALLEL
    COLLECTOR-EMITTER DIODE

    APPLICATIONS 3
    ■ LINEAR AND SWITCHING INDUSTRIAL 2
    1
    EQUIPMENT

    DESCRIPTION TO-220
    The BDX53F is a silicon Epitaxial-Base NPN
    power transistor in monolithic Darlington
    configuration, mounted in Jedec TO-220 plastic
    package. It is intented for use in power linear and
    switching applications. The complementary PNP
    type is BDX54F. INTERNAL SCHEMATIC DIAGRAM

    R1 Typ. = 10 KΩ R2 Typ. = 150 Ω

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    NPN BDX53F
    PNP BDX54F
    V CBO Collector-Base Voltage (I E = 0) 160 V
    V CEO Collector-Emitter Voltage (I B = 0) 160 V
    V EBO Emitter-base Voltage (I C = 0) 5 V
    IC Collector Current 8 A
    I CM Collector Peak Current 12 A
    IB Base Current 0.2 A
    P tot Total Dissipation at T c ≤ 25 o C 60 W
    o
    T stg Storage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C
    For PNP types voltage and current values are negative.

    October 2003 1/4


    BDX53F / BDX54F

    THERMAL DATA
    o
    R thj-case Thermal Resistance Junction-case Max 2.08 C/W
    o
    R thj-amb Thermal Resistance Junction-ambient Max 70 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CEO Collector Cut-off V CE = 80 V 0.5 mA
    Current (I E = 0)
    I CBO Collector Cut-off V CB = 160 V 0.2 mA
    Current (I B = 0)
    I EBO Emitter Cut-off Current V EB = 5 V 5 mA
    (I C = 0)
    V CEO(sus) ∗ Collector-Emitter I C = 50 mA 160 V
    Sustaining Voltage
    (I B = 0)
    V CE(sat) ∗ Collector-emitter IC = 2 A I B =10 mA 2 V
    Saturation Voltage
    V BE(sat) ∗ Base-emitter IC = 2 A I B =10 mA 2.5 V
    Saturation Voltage
    h FE ∗ DC Current Gain IC = 2 A V CE = 5 V 500
    IC = 3 A V CE = 5 V 150
    VF∗ Parallel Diode Forward I F = 2 A 2.5 V
    Voltage
    h fe ∗ Small Signal Current I C = 0.5 A
    Gain f = 1MHz V CE = 2 V 20
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
    For PNP types voltage and current values are negative.

    2/4
    BDX53F / BDX54F

    TO-220 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 4.40 4.60 0.173 0.181
    C 1.23 1.32 0.048 0.052
    D 2.40 2.72 0.094 0.107
    E 0.49 0.70 0.019 0.027
    F 0.61 0.88 0.024 0.034
    F1 1.14 1.70 0.044 0.067
    F2 1.14 1.70 0.044 0.067
    G 4.95 5.15 0.194 0.202
    G1 2.40 2.70 0.094 0.106
    H2 10.00 10.40 0.394 0.409
    L2 16.40 0.645
    L4 13.00 14.00 0.511 0.551
    L5 2.65 2.95 0.104 0.116
    L6 15.25 15.75 0.600 0.620
    L7 6.20 6.60 0.244 0.260
    L9 3.50 3.93 0.137 0.154
    M 2.60 0.102
    DIA. 3.75 3.85 0.147 0.151

    P011CI

    3/4
    BDX53F / BDX54F

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics.
    All other names are the property of their respective owners.

    © 2003 STMicroelectronics – All Rights reserved


    STMicroelectronics GROUP OF COMPANIES
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    Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

    http://www.st.com

    4/4

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