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    Silicon NPN Transistor

    Uploaded by

    Ingrid Bon Bilmayer
    2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. Intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Transistor

    Uploaded by

    Ingrid Bon Bilmayer
    96 views4 pages
    2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. Intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

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    2n3055

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    © Attribution Non-Commercial (BY-NC)

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    2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. Intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    96 views4 pages

    Silicon NPN Transistor

    Uploaded by

    Ingrid Bon Bilmayer
    2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. Intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    2N3055

    SILICON NPN TRANSISTOR


    ■ SGS-THOMSON PREFERRED SALESTYPE
    ■ NPN TRANSISTOR

    DESCRIPTION
    The 2N3055 is a silicon epitaxial-base NPN
    transistor in Jedec TO-3 metal case. It is intended
    for power switching circuits, series and shunt
    regulators, output stages and high fidelity
    amplifiers.
    1
    2

    TO-3

    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    V CBO Collector-Base Voltage (I E = 0) 100 V
    V CER Collector-Emitter Voltage (R BE = 100Ω) 70 V
    V CEO Collector-Emitter Voltage (I B = 0) 60 V
    V EBO Emitter-Base Voltage (I C = 0) 7 V
    IC Collector Current 15 A
    IB Base Current 7 A
    o
    P tot Total Dissipation at T c ≤ 25 C 115 W
    o
    T stg Storage Temperature -65 to 200 C
    o
    Tj Max. Operating Junction Temperature 200 C

    June 1997 1/4


    2N3055

    THERMAL DATA
    o
    R thj-case Thermal Resistance Junction-case Max 1.5 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    I CEV Collector Cut-off V CE = 100 V 1 mA
    o
    Current (V BE = -1.5V) V CE = 100 V T j = 150 C 5 mA
    I CEO Collector Cut-off V CE = 30 V 0.7 mA
    Current (I B = 0)
    I EBO Emitter Cut-off Current V EB = 7 V 5 mA
    (I C = 0)
    V CEO(sus) ∗ Collector-Emitter I C = 200 mA 60 V
    Sustaining Voltage
    V CER(sus) ∗ Collector-Emitter I C = 200 mA R BE = 100 Ω 70 V
    Sustaining Voltage
    V CE(sat) ∗ Collector-Emitter IC = 4 A I B = 400 mA 1 V
    Saturation Voltage I C = 10 A I B = 3.3 A 3 V
    V BE ∗ Base-Emitter Voltage IC = 4 A V CE = 4 V 1.5 V
    h FE ∗ DC Current Gain IC = 0.5 A V CE = 4 V Group 4 20 50
    IC = 0.5 A V CE = 4 V Group 5 35 75
    IC = 0.5 A V CE = 4 V Group 6 60 145
    IC = 0.5 A V CE = 4 V Group 7 120 250
    IC = 4A VCE = 4 V 20 70
    IC = 10 A V CE = 4 V 5
    h FE1 /h FE1 ∗ DC Current Gain I C = 0.5 A V CE = 4 V 1.6
    fT Transition frequency IC = 1 A VCE = 4 V 2.5 MHz
    I s/b ∗ Second Breakdown V CE = 40 V 2.87 A
    Collector Current
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

    2/4
    2N3055

    TO-3 MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.

    A 11.00 13.10 0.433 0.516

    B 0.97 1.15 0.038 0.045

    C 1.50 1.65 0.059 0.065

    D 8.32 8.92 0.327 0.351

    E 19.00 20.00 0.748 0.787

    G 10.70 11.10 0.421 0.437

    N 16.50 17.20 0.649 0.677

    P 25.00 26.00 0.984 1.023

    R 4.00 4.09 0.157 0.161

    U 38.50 39.30 1.515 1.547

    V 30.00 30.30 1.187 1.193

    A D
    P

    G C E
    U

    B
    O
    N

    R
    P003F
    3/4
    2N3055

    Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
    consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
    license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
    in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
    SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
    written approval of SGS-THOMSON Microelectonics.

    © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

    SGS-THOMSON Microelectronics GROUP OF COMPANIES


    Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
    Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
    ...

    4/4

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