Plastic-Encapsulate Transistors

FEATURES
Complementary to MMBT5401
MMBT5551 (NPN)

Ideal for medium power amplification and switching

MARKING: G1

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 180 V

Collector-Emitter Voltage VCEO 160 V

1. BASE
Emitter-Base Voltage VEBO 6 V
2. EMITTER SOT-23
Collector Current -Continuous IC 0.6 A 3. COLLECTO

Collector Power Dissipation PC 0.3 W

Junction Temperature TJ 150

Storage Temperature Tstg -55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage VCBO IC=100μA,IE=0 180 V

Collector-emitter breakdown voltage
VCEO IC= 1mA, IB=0 160 V

Emitter-base breakdown voltage VEBO IE= 10μA, IC=0 6 V

Collector cut-off current ICBO VCB= 120V, IE=0 50 nA
Emitter cut-off current IEB VEB= 4V, IC=0 50 nA
O *
hFE1 VCE=5V, IC=1mA 80
DC current gain hFE2* VCE=5V, IC =10mA 100 300
hFE3* VCE=5V, IC=50mA 50
IC=10mA, IB=1mA 0.15
Collector-emitter saturation voltage VCEsat* V
IC=50mA, IB=5mA 0.2
IC=10mA, IB= 1mA 1
Base-emitter saturation voltage VBEsat* V
IC=50mA, IB= 5mA 1
Transition frequency fT VCE=10V,IC=10mA,f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF
Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF
VCE=5V,Ic=0.25mA,
Noise figure NF 8 dB
f=10Hz to 15.7KHz,Rs=1kΩ

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

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 Plastic-Encapsulate Transistors

MMBT5551 Typical Characteristics

Static Characteristic hFE —— IC
18 500
90uA COMMON COMMON EMITTER
EMITTER VCE=5V Ta=100℃
15 80uA Ta=25℃
COLLECTOR CURRENT IC (mA)

70uA

DC CURRENT GAIN hFE

12 Ta=25℃
60uA
100
50uA
9

40uA
6
30uA

IB=20uA
3

0 10
0 2 4 6 8 10 12 1 10 100 200
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

1.0
VBEsat —— IC
0.3
B
VCEsat —— IC
β=10 β=10
COLLECTOR-EMITTER SATURATION
BASE-EMITTER SATURATION

0.8
VOLTAGE VBEsat (V)

VOLTAGE VCEsat (V)

0.1
Ta=25℃
Ta=100℃

0.6

Ta=100℃ Ta=25℃

0.4

0.2 0.01
0.1 1 10 100 200 1 10 100 200
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

VBE —— IC Cob / Cib —— VCB / VEB

200 100
COMMON EMITTER f=1MHz
VCE=5V IE=0 / IC=0
100
Ta=25℃
IC (mA)

Cib
CAPACITANCE C (pF)

Ta=100℃
COLLECTOR CURRENT

Ta=25℃ 10
10

Cob

1 1
0.2 0.4 0.6 0.8 1.0 0.1 1 10 20
BASE-EMITTER VOLTAGE VBE(V) REVERSE VOLTAGE V (V)

fT —— IC PC —— Ta
150 0.4
VCE=10V
Ta=25℃
TRANSITION FREQUENCY fT (MHz)

COLLECTOR POWER DISSIPATION

0.3

100
PC (W)

0.2

0.1

50 0.0
1 3 10 20 30 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ )

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