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    LabInstr EE320L Lab7

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    baig79
    This document provides instructions for a laboratory experiment on characterizing bipolar junction transistors (BJTs). The objectives are to get familiar with BJTs and apply knowledge of their DC biasing to practical applications. Students will use breadboards, function generators, power supplies and other equipment to build circuits with BJTs and measure their behavior. Prelab assignments involve calculations, simulations and building circuit schematics in LTSpice. The lab experiments involve implementing circuits on breadboards and comparing results to prelab work. Postlab reporting includes documenting methods, results and addressing questions about BJT circuit operation.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    LabInstr EE320L Lab7

    Uploaded by

    baig79
    61 views9 pages
    This document provides instructions for a laboratory experiment on characterizing bipolar junction transistors (BJTs). The objectives are to get familiar with BJTs and apply knowledge of their DC biasing to practical applications. Students will use breadboards, function generators, power supplies and other equipment to build circuits with BJTs and measure their behavior. Prelab assignments involve calculations, simulations and building circuit schematics in LTSpice. The lab experiments involve implementing circuits on breadboards and comparing results to prelab work. Postlab reporting includes documenting methods, results and addressing questions about BJT circuit operation.

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    LabInstr_EE320L_Lab7

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    This document provides instructions for a laboratory experiment on characterizing bipolar junction transistors (BJTs). The objectives are to get familiar with BJTs and apply knowledge of their DC biasing to practical applications. Students will use breadboards, function generators, power supplies and other equipment to build circuits with BJTs and measure their behavior. Prelab assignments involve calculations, simulations and building circuit schematics in LTSpice. The lab experiments involve implementing circuits on breadboards and comparing results to prelab work. Postlab reporting includes documenting methods, results and addressing questions about BJT circuit operation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    61 views9 pages

    LabInstr EE320L Lab7

    Uploaded by

    baig79
    This document provides instructions for a laboratory experiment on characterizing bipolar junction transistors (BJTs). The objectives are to get familiar with BJTs and apply knowledge of their DC biasing to practical applications. Students will use breadboards, function generators, power supplies and other equipment to build circuits with BJTs and measure their behavior. Prelab assignments involve calculations, simulations and building circuit schematics in LTSpice. The lab experiments involve implementing circuits on breadboards and comparing results to prelab work. Postlab reporting includes documenting methods, results and addressing questions about BJT circuit operation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 9

    EE 320 L ELECTRONICS I

    LABORATORY 7: BIPOLAR TRANSISTOR CHARACTERIZATIONS

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING


    UNIVERSITY OF NEVADA, LAS VEGAS

    1. OBJECTIVE

    Get familiar with BJTs, and apply knowledge learned in lecture to practical applications.
    Understand how to set up DC bias for BJTs so that it works as designed.

    2. COMPONENTS & EQUIPMENT

    Power Supply Breadboard & Jump wires


    Function Generator Resistors & Capacitors
    Multimeter BJT (2N2222A, 2N3904, 2N3906)
    Oscilloscope

    3. BACKGROUND

    A bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses both
    electron and hole charge carriers. BJTs use two junctions between two semiconductor types, n-
    type and p-type, and they manufactured in two types, NPN and PNP.
    A terminal is connected to each of the three semiconductor regions of the transistor, with the
    terminals labeled emitter (E), base (B), and collector (C). Each transistor consists of two pn
    junctions, the emitter-base junction (EBJ) and the collector-base junction (CBJ). Three BJT modes
    of operation: 1) Cutoff, 2) Active, 3) Saturation.
    Key knowledges and formulas related to BJTs.

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 1


    EE 320L ELECTRONICS I

    A simple structure
    of a npn transistor.

    A simple structure
    of a pnp transistor.

    BJT modes of
    operations.

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 2


    EE 320L ELECTRONICS I

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 3


    EE 320L ELECTRONICS I

    Hybrid-𝝅 Model

    (𝑔𝑚 𝑣𝜋 ) Version (𝛽𝑖𝑏 ) Version

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 4


    EE 320L ELECTRONICS I

    T Model

    (𝑔𝑚 𝑣𝜋 ) Version (𝛼𝑖) Version

    4. LAB DELIVERIES

    PRELAB:

    1. Learn the idea of BJT transistors, and understand the principles of various operation modes,
    i.e. how the current flows through PN junctions under different operation modes. Part of
    knowledge is covered in the previous section.

    2. Overview the key character of BJT in the datasheet.


    2N2222A https://www.onsemi.com/pub/Collateral/P2N2222A-D.PDF
    2N3904 https://www.onsemi.com/pub/Collateral/2N3903-D.PDF

    3. Use hand-calculation and LTspice to obtain the voltages at “vout” in Circuit 1.


    1) Assume the threshold voltage for VBE to turn on Q2 (i.e. BJT 2N2222) is 0.7V and 𝛽=100.
    Same as for all BJTs in other circuits.
    2) Calculate and simulate the circuit for voltage at “vout” when V3 = 0.1V, 0.5V, 0.7V, 1V, 2V,
    respectively.
    3) (LTspice) Run DC sweep analysis (i.e. command in the diagram) for V3 from 0V to 5V.
    Observe the voltage transfer characteristic (VTC) diagram.

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 5


    EE 320L ELECTRONICS I

    Circuit 1

    4. Use hand-calculation and LTspice to compute/simulate the voltages at nb, nc, ne in Circuit 2.
    1) Write down the voltages at nb, nc, ne.
    2) Compute and simulate the currents flowing through nb (i.e I(R1)-I(R2)), nc (i.e. I(R3)) and ne
    (i.e. I(R4)). What is the relationship among these current values?
    3) Change R1 to 120Ω, and redo the computation and simulation for voltages and currents at nb,
    nc, ne. Compare the results with 1). Explain.

    Circuit 2

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 6


    EE 320L ELECTRONICS I

    5. Use LTspice to simulate Circuit 3.

    Circuit 3

    1) Add a sine waveform input between BJT’s base node (i.e. nb) and intermediate node of R1
    and R2. Set the sine waveform with an amplitude of 0.1V and a frequency of 10Hz.
    2) Simulate the voltages and currents at/through nc and ne.
    3) Set R1 = 120Ω, and repeat 2). Compare the results.
    4) Reset R1 back to 12KΩ. Increase the sine waveform frequency to 1KHz. Repeat 2).
    5) Run AC analysis for Circuit 3 V2 (i.e. input AC signal) for Bode plot (i.e. AC component of
    𝑉𝑛𝑐 as output) from 1Hz to 100MHz.

    LAB EXPERIMENTS:

    1. Implement and measure Circuit 1 in Prelab Experiment 3 on breadboard, and compare with
    the hand-calculation and LTspice results.
    • Sweep V3 input from DC 0V to 2V, with increment of 0.1V. Draw the VTC.

    2. Implement and measure Circuit 2 in Prelab Experiment 4 on breadboard, and compare with
    the hand-calculation and LTspice results.

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 7


    EE 320L ELECTRONICS I

    3. Implement and measure Circuit 3 in Prelab Experiment 5 on breadboard, and compare with
    the hand-calculation and LTspice results.
    • Use R1 = 12KΩ and V2 frequencies of 10Hz, 100Hz, 1KHz and 10KHz, 100KHz, 1MHz,
    respectively, for measurement on board. Write down Vpp and draw the Bode plot.
    • If Circuit 3 does not work, use the following Circuit 4 instead. Use the exact same value of 𝑉𝑛𝑏
    measured in Circuit 2 for the offset “x” in function generator.

    Circuit 4

    POSTLAB REPORT:

    Include the following elements in the report document:


    Section Element
    Theory of operation
    1
    Include a brief description of every element and phenomenon that appear during the experiments.
    Prelab report
    1. Is 2N2222A a PNP or NPN BJT?
    2
    2. Hand calculation and LTspice simulation results of Prelab Experiment 3.
    3. LTspice simulation results of Prelab Experiment 4.
    Results of the experiments
    Experiments Experiment Results
    3 1 Screenshots of LTspice simulations and multimeter readings for DC measurements.
    2 Screenshots of LTspice simulations and oscilloscope waveforms.
    3 Screenshots of LTspice simulations and oscilloscope waveforms.
    Answer the questions
    Questions Questions
    In Lab Experiment 2 and 3 (i.e. Prelab Experiment 4 & 5), pls explain the voltage
    1
    4 and current changes when switching R1 from 12KΩ to 120Ω.
    2 What do you expect to see if change 2N2222A to a PNP BJT?
    Compare the Bode plot drawn in LTspice (Prelab Experiment 5) and Lab Experiment
    3
    5. Explain why different if any.

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 8


    EE 320L ELECTRONICS I

    Conclusions
    5 Write down your conclusions, things learned, problems encountered during the lab and how they were solved,
    etc.
    Images
    Paste images (e.g. scratches, drafts, screenshots, photos, etc.) in Postlab report document (only .docx, .doc or
    .pdf format is accepted). If the sizes of images are too large, convert them to jpg/jpeg format first, and then
    paste them in the document.
    6
    Attachments (If needed)
    Zip your projects. Send through WebCampus as attachments, or provide link to the zip file on Google Drive /
    Dropbox, etc.

    5. REFERENCES & ACKNOWLEDGEMENT

    1. Adel S. Sedra & Kenneth C. Smith, “Microelectronic Circuit”, 6th Ed.


    2. Online sources: Google, Wikipedia, etc.
    3. Previous lab instructions.
    4. Related circuit component datasheets.

    I appreciate the help from faculty members and TAs during the composing of this instruction
    manual. I would also thank students who provide valuable feedback so that we can offer better
    higher education to the students.

    DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING 9

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