MIL HDBK 217F Notice2

MIL-HDBK-ZLi’F CHG N O T I C E 2 7777770 OL770Lb L 4 T
INOT MEASUREMENT SENSITIVE1 ~~~ ________ ~~~
MIL-HDBK-217F
2 DECEMBER 1991
SUPERSEDING
MIL-HDBK-217E, Notice 1
2 January 1990
MILITARY HANDBOOK
RELIABILITY PREDICTION OF
ELECTRONIC EQUIPMENT
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THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT -

CITE THIS DOCUMENT ASA REQUIREMENT
AMSC NIA
DISTRIBUTION STATEMENTA: Approved for public release: distribution unlimited.
Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

10:42:07 MDT Questions or comments about this message: please call the Document
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CHG N O T I C E 2
MIL-HDBK-~IJ~F = 9 9 9 9 9 70 1 7 7 0 1 4 377
NOTICE OF CHANGE NOT MEASUREMENT
THIS
HANDBOOK IS FOR GUIDANCE ONLY - MIL-HDBK-217F
DONOTCITE THIS DOCUMENT AS A REQUIREMENT NOTICE 2
28 February 1995
MILITARY HANDBOOK
RELIABILITY PREDICTIONOF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F

1. The following pages of MIL-HDBK917F have been revised and supersede the pages listed.
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CHG N O T I C E 2
MIL-HDBK-~IJ~F = 9999970 Ol1970I1.5 203 9
MIL-HDBK-217F
NOTICE 2
2. Retain the pages of this notice and insert before the Table of Contents.
3. Holders of MIL-HDBK-217F will verifythatpagechanges and additions indicatedhavebeen

entered. The notice pages will be retainedasachecksheet.Theissuance, together with
appended pages, is a separate publication. Each notice is to be retained by stocking points until
the military handbookis revised or canceled.
Custodians: Preparing Activity:

Army - CR Air Force 17 -
Navy - EC
Air Force 17 - Project No. RELI-O074
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Review Activities:
Army - MI, AV, ER
Navy - SH, AS, OS
Air Force - 11, 13,15, 19, 99
Army - AT, ME, GL

Navy - CG, MC, YD, TD
Air Force - 85
AMSCNIA
DISTRIBUTION STATEMENTA: Approved for public release; distribution unlimited. FSC RELI
2
-
i'
t HIL-HDBK-ZI7F
NOTICE I RE H 9 9 9 9 7 7 0 007b088 b
NOTICE OF CHANGE NOT MEASUREMENT

SENSITIVE
MIL-HDBK-217F
NOTICE 1
10 JULY 1992
MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F
1. The following pages of MIL-HDBK-217F have been revised and supersede the pages listed.
New Page(s) Date Superseded Page(s) Date

vi¡ vi i 2 December 199 1
5-3 5-3 2 December 1991
5-4 5-4 2 December 1991
5-7 5-7 2 December 1991
5-8 2 December 1991 5-8 Reprinted withoutchange
5-9 5-9 2 December 1991
5-1O 2 December 1991 5-1O Reprinted without change
5-11 2 December 1991 5-11 Reprinted without change
5-12 5-12 2 December 1991
5-13 5-13 2 December 1991
5-19 5-19 2 December 1991
I
6-15 6-15 2 December 1991
7-2 7-2 2 December 1991
12-3 12-3 2 December 1991
12-4 2 December 1991 12-4 Reprinted withoutchange
A- 1 2 December 1991 A- 1 Reprinted withoutchange
A-2 A-2 2 December 1991
A-4 2 December 1991 A-4 Reprinted without change
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A-1O 2 December 1991 A-1O Reprinted withoutchange
A-11 2 December 1991 A-1 1 Reprinted without change
A-15 2 December 1991 A-15 Reprinted withoutchange
A-16 A-l6 2 December 1991
AMSC N/A
1 :
Approved for public release;distribution unlimited.

~~ ~ ~~
MIL-HDBK-2L7F N O T I C E L R E 9399970 O076089 8
MIL-HDBK-217F
NOTICE 1
2. Retainthe pages of this noticeandinsertbeforetheTable of Contents.
3. Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been
entered. The notice pages will be retained as a check sheet. The issuance, together with
appended pages, is a separate publication. Each notice is to be retained by stocking points until
the military handbook is revised or canceled.

Navy - EC
Air Force - 17 Project No. RELI-O068
Review Activities:
-
Army MI, AV, ER
-
Navy SH, AS, OS
Air Force - 11, 13, 14, 15, 18,
19,99
User Activities:
Army - AT, ME, GL
Navy - CG, MC,YD, TD
-
Air Force 85
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2
H I L - H D B K - 2 1C7 N
H
FO6 TICE 2 9 9 9 9 7 7 0 O L 7 3 O L 7 086 m
MIL-HDBK-217F
DEPARTMENT OF DEFENSE
WASHINGTONDC 20301
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
1. This standardization handbook was developed by the Department of Defense

with the assistance of the military departments, federal agencies, and industry.
2. Everyefforthas been made toreflectthelatestinformationonreliability

prediction procedures. It is the intent to review this handbook periodically to
ensure its completeness and currency.
3. Beneficial comments (recommendations,additions,deletions)and any

pertinentdata whichmay be of useinimprovingthis document should be
addressed to: RomeLaboratory/ERSR,Attn:Seymour F. Morris, 525Brooks
Rd.,
Griffiss AFB, NY 13441-4505,by
using
the
self-addressed
Standardization DocumentImprovement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
..
II
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NIL-HDBK-217F C H G NOTICE 2 9999970 O L 9 3 O L B TL2
MIL-HDBK-217F
TABLE OF CONTENTS
SECTION 1: SCOPE
1. 1 Purpose................................................................................................................. 1-1
1.2 Application ............................................................................................................. 1-1
1.3 ComputerizedReliabilityPrediction ......................................................................... 1-1
SECTION 2: REFERENCE
DOCUMENTS ....................................................................... 2-1
SECTION 3: INTRODUCTION
3.1 Reliability Engineering ............................................................................................ 3-1
3.2 TheRole of Reliability Prediction.............................................................................. 3-1
3.3 Limitations of Reliability Predictions.......................................................................... 3-2
3.4 PartStressAnalysisPrediction ................................................................................ 3-2
SECTION 4: RELIABILITY ANALYSIS EVALUATION ................................................... 4-1
SECTION 5: MICROCIRCUITS. INTRODUCTION ........................................................... 5-1

5.1 Gate/LogicArraysandMicroprocessors .................................................................... 5-3
5.2
Memories ............................................................................................................... 5-4
5.3VHSlCNHSlC Like .................................................................................................. 5-7
5.4 GaAs MMlCandDigitalDevices ................................................................................ 5-8
5.5 Hybrids .................................................................................................................. 5-9
5.6 SAW Devices ......................................................................................................... 5-10
5.7 MagneticBubbleMemories ..................................................................................... 5-11
5.8 X.T Table for All ........................................................................................................ 5-13
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5.9 C2TableforAll ....................................................................................................... 5-14
5.1O XE, xL and X.QTables for All .................................................................................... 5-15
5.1 1 TJDetermination. (All ExceptHybrids) ...................................................................... 5-17
5.1 2TJ Determination,(ForHybrids) ................................................................................ 5-18
5.13 Examples ............................................................................................................... 5-20
SECTION 6: DISCRETE SEMICONDUCTORS

6.0 Discrete Semiconductors. Introduction.................................................................... 6-1
6.1 Diodes. Low Frequency.......................................................................................... 6-2
6.2 Diodes. High Frequency (Microwave.RF) ................................................................. 6-4
6.3 Transistors. Low Frequency. Bipolar........................................................................ 6-6
6.4 Transistors. Low Frequency. Si FET......................................................................... 6-8
6.5 Transistors, Unijunction ........................................................................................... 6-9
6.6 Transistors, Low Noise, High Frequency, Bipolar...................................................... 6-10
6.7 Transistors, High Power, High Frequency, Bipolar ..................................................... 6-12
6.8 Transistors, High Frequency, GaAs FET ................................................................... 6-14
6.9 Transistors, High Frequency, Si FET ........................................................................ 6-16
6.10 Thyristors andSCRs ............................................................................................... 6-17
6.1 1 Optoelectronics, Detectors, Isolators, Emitters ......................................................... 6-19
6.1 2 Optoelectronics, Alphanumeric Displays.................................................................. 6-20
6.1 3 Optoelectronics, Laser Diode.................................................................................. 6-21
6.1 4 TJ Determination.................................................................................................... 6-23
6.15 Example................................................................................................................. 6-25
...
111

MIL-HDBK-217F CHG N O T I C E 2 9999970 OL970L9 959
MIL-HDBK-217F
NOTICE 2
TABLE OF CONTENTS
SECTION 7: TUBES
7.1 AllTypesExcept TWT and Magnetron .................................................................... 7-1
7.2 Traveling
Wave ....................................................................................................... 7-3
7.3 Magnetron............................................................................................................. 7-4
SECTION 8: LASERS
8.0 Introduction........................................................................................................... 8-1
8.1 HeliumandArgon .................................................................................................. 8-2
8.2 CarbonDioxide.Sealed ......................................................................................... 8-3
8.3 Carbon Dioxide. Flowing ....................................................................................... 8-4
8.4SolidState.ND:YAGandRubyRod ...................................................................... 8-5
SECTION 9: RESISTORS
9.1 Resistors ............................................................................................................... 9-1
SECTION 10: CAPACITORS

10.1 Capacitors ............................................................................................................. 10-1
10.2
Capacitors.
Example .............................................................................................. 10-6
SECTION 11 : INDUCTIVE DEVICES

11.1 Transformers ......................................................................................................... 11-1
11.2 Coils ..................................................................................................................... 11-3
11.3 Determination of Hot Spot Temperature ................................................................ 11-4
SECTION 12: ROTATING DEVICES

12.1
Motors .................................................................................................................. 12-1
12.2 SynchrosandResolvers ........................................................................................ 12-4
12.3 ElapsedTimeMeters .............................................................................................. 12-5
SECTION 13: RELAYS

13.1 Mechanical............................................................................................................. 13-1
13.2 SolidStateandTimeDelay ..................................................................................... 13-3
SECTION 14: SWITCHES

14.1 Switches................................................................................................................ 14-1
14.2 Breakers .....................................................................................................
Circuit 14-2
SECTION 15: CONNECTORS

15.1 Connectors. General .............................................................................................. 15-1
15.2 Sockets .............................................................................................
Connectors, 15-3
SECTION 16: INTERCONNECTION ASSEMBLIES

16.1InterconnectionAssemblieswithPlatedThroughHoles .......................................... 16-1
16.2 InterconnectionAssemblies,SurfaceMountTechnology ......................................... 16-2
SECTION 17: CONNECTIONS

17.1 Connections .......................................................................................................... 17-1
SECTION 18: METERS

18.1 Meters.
Panel ......................................................................................................... 18-1
SECTION 19: QUARTZ

CRYSTALS
19.1 Crystals ......................................................................................................
Quartz 19-1
¡v page Supersedes
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iv of Revision F
NIL-HDBK-2L7F CHG N O T I C E 2 9 9 9 9 9 7 0 0177020 b 7 0 m
MIL-HDBK-217F
NOTICE 2
TABLE
OFCONTENTS
SECTION 20: LAMPS

20.1 Lamps................................................................................................................... 20-1
SECTION 21 : ELECTRONIC FILTERS
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21 .1 Electronic Filters. Non-Tunable................................................................................ 21-1

SECTION22: FUSES
22.1 Fuses ................................................................................................................... 22-1
SECTION 23: MISCELLANEOUS PARTS
Parts ................................................................................................
23.1 Miscellaneous 23-1
APPENDIX A: PARTS COUNT RELIABILITY PREDICTION.......................................... A- 1
APPENDIX B: VHSICNHSIC-LIKE AND VLSl CMOS (DETAILED MODEL) .............. B-1

APPENDIX C: BIBLIOGRAPHY ......................................................................................... c-1
LISTOF TABLES
Table 3-1: Partswith Multi-Level QualitySpecifications ........................................................ 3-3

Table 3-2: EnvironmentalSymbolandDescription .............................................................. 3-4
Table 4-1: ReliabilityAnalysisChecklist ............................................................................. 4-1
Table 6-1: DefaultCaseTemperaturesfor All Environments (“C) .......................................... 6-23
Table 6-2: ApproximateThermalResistance for SemiconductorDevices
in Various Package Sizes ................................................................................ 6-24
LISTOF FIGURES
Figure 5-1: Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate ................ 5-18
Figure 8-1: Examples of ActiveOpticalSurfaces .................................................................. 8-1
page Revision
Supersedes v of F V

MIL-HDBK-217F CHG N O T I C E 2 = 7799770 O377022 443
MIL-HDBK-217F
NOTICE 2
FOREWORD
1.0 THIS
HANDBOOK IS FOR GUIDANCE
ONLY.
THIS
HANDBOOKSHALL
NOT
BE CITED AS REQUIREMENT.
A IF IT IS, THE
CONTRACTOR
DOES
NOT
HAVETO
COMPLY.
MIL-HDBK-217F,Notice 2 provides thefollowingchangesbasedupon a recentlycompleted

study (see Ref. 37 listed in Appendix C):
Revised resistor and capacitor models, including new models to address chip devices.
Updated failure ratemodelsfortransformers,coils,motors,relays,switches,circuitbreakers,

connectors,printedcircuitboards(withandwithoutsurfacemounttechnology)and
connections.
Anewmodel to addresssurfacemountedtechnologysolderconnections.
9 ArevisedTravelingWaveTubemodelbasedupondatasuppliedby the ElectronicIndustries

Association Microwave Tube Division. This further lowers the calculated failure rates beyond
the earlier modifications made in the base document (MIL-HDBK-217F, 2 December 1991).
RevisedtheFast RecoveryPower Rectifierbasefailurerate downward basedon a

reevaluation of Ref. 28.
2.0 MIL-HDBK-217F, Notice1, (10 July 1992) was issued to correctminortypographical

errors in the basic F Revision.
3.O MIL-HDBK-217F, (base document), (2 December 1991) provided

the
following
changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C):
1. New failure rate prediction modelsare provided for the following nine major classes of
microcircuits:
Monolithic Bipolar Digital and Linear Gate/Logic Array Devices

Monolithic MOS Digital and Linear Gate/Logic Array Devices
Monolithic Bipolar and MOS Digital Microprocessor Devices
(including Controllers)
Monolithic Bipolar and MOS Memory Devices
Monolithic GaAs Digital Devices
Monolithic GaAs MMlC Devices
Hybrid Microcircuits
Magnetic Bubble Memories
Surface Acoustic Wave Devices
The 2 December1991 revision provided new prediction modelsfor bipolar andMOS

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microcircuitswith gate countsupto 60,000, linearmicrocircuitswith up to 3000

transistors, bipolar and MOS digital microprocessorandco-processorsup to 32 bits,
memory devices with up to 1 million bits, GaAs monolithic microwave integrated circuits
("ICs) with up to 1,000 active elements, and GaAs digital ICs with up to 10,000
transistors. The C, factors have been extensively revised to reflect new technology
devices with improved reliability, and the activation energies representing the temperature
sensitivity of the dice ( 7 ~ have
~ ) been changed for MOS devices and for memories. The
vi¡ page
Supersedes of Revision F, Notice 1 vi¡
MIL-HDBK-217F CHG N O T I C E 2 W 9999970 0397023 3 8 T
MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains unchanged from the previous Handbook version, but includes pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed dual
in-line packages. New values have been included for the quality factor (xa), the learning
factor (xL), andthe environmentalfactor (xE). Themodel for hybrid microcircuitshas
been revised to be simpler to use, to delete the temperature dependence of the seal and
interconnectfailurerate contributions,and to provide a method of calculatingchip
junction temperatures.
2. A newmodel for Very High Speed IntegratedCircuits(VHSICNHSICLike) andVery

Large Scale Integration (VLSI) devices (gate counts above 60,000).
3. The reformatting of the entire handbook to make it easier to use.
4. A reduction in the number of environmental factors (XE) from 27 to 14.
5. A revised failure rate model for Network Resistors.
6. Revised models for TWTsand Klystronsbased on datasupplied by theElectronic

Industries Association Microwave Tube Division.
viii --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
New
MIL-HDBK-217F C H G N O T I C E 2 7777770 0197024 216
MIL-HDBK-217F
NOTICE 2
1.1 Purpose Thishandbook -

is for guidanceonlyandshallnotbecitedasa
requirement. If it is, thecontractordoesnothavetocomply(seePage1-2). T he
purpose of this handbook is to establish and maintain consistent and uniform methods for estimating
the inherent reliability (Le., the reliability of amaturedesign)of military electronic equipment and
systems. It provides a common basis for reliability predictions during acquisition programs for military
electronic systems and equipment. It also establishes a common basis for comparing and evaluating
reliability predictions of related or competitive designs. The handbook is intended to be used as a tool
to increase the reliability of the equipment being designed.
1.2 -
Application Thishandbookcontains two methodsof reliability prediction - "Part Stress
Analysis" in Sections 5 through 23 and "Parts Count" in Appendix A. These methods vary in degree
of information needed to apply them. The Part Stress Analysis Method requires a greater amount of
detailed information and is applicable during the later design phase when actual hardware and circuits
are beingdesigned.The Parts CountMethodrequiresless information, generally part quantities,
quality level, and the application environment. This method is applicable during the early design phase
andduringproposal formulation. In general,thePartsCount Method will usually result in amore
conservative estimate (Le., higher failure rate) of system reliability than the Parts Stress Method.
of Revision F
Supersedes page 1-11-1
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MIL-HDBK-217F C H 6 N O T I C E 2 9 9 9 9 9 7 0 0177025 1 5 2
MIL-HDBK-217F
NOTICE 2
1.0 SCOPE
OFFICE OF THE ASSISTANT SECRmARY OF DEFENSE

9906 DEFENSE PENTAGON
WASHINGTON. DC x U o 1 - 3 # ) 0
FEB 2 8 1995
SUBJECT: Notice 2 to MIL-HDBK-217F, 'Reliability Prediction of

Electronic Equipment', Project RELI-O074
Prior to sending the subject noticet o the M D Single Stock
Point f o r printing and distribution, the following additions=st
be made:
Across the cover in BIG BOLD BLJu3K LETpisRs ALL CAPS: Insert -
'TRIS HANDBOOK IS FOR GUIDANCE =Y. DO NOT CITE T H I S
DOCUMENT As A REQmREMENT..
In the POREWORD (Page vii of Notice 2 ) . paragraph 1.0: A d d
'THIS HANDBOOK IS FOR GUIDANCE ONLY. TEacS HANDBOOK SHWl NOT
HAVE M COMPLY. -
BE CITED AS A REQVIREMENT. IF IT I S , TRE R- DOES NOT
Add an entry f o r the SCOPE, paragraph 1.1 (Purpose): 'This

handbook is f o r guidance only and shall not be cited as a
requirement. If it is, the contractor &es not have to
comply.
Walter B. Ber
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Chairman,
Defense Standards Improvement
Council
cc: OUSD(A&T)IYTSE&E/SE, Mr. M. Zsak
1-2 New Page

MIL-HDBK-237F CH6 N O T I C E 2 9999970 O377026 079
MIL-HDBK-217F
NOTICE 2
2 . 0 REFERENCE
DOCUMENTS
This handbook cites some specifications which have been cancelled or which describe devices that are
not to be used for new design. This information is necessary because someof these devices are used in
so-called "off-the-shelf"equipment which the Department of Defense purchases. The documents cited
in this section are for guidance and information.
SPECIFICATION SECTION # TITLE
MIL-C-5 10.1 Capacitors, Fixed, Mica Dielectric, General Specification for
MIL-R-11 9.1 Resistor, Fixed, Composition (Insulated), General Specification for
MIL-R-19 9.1 Resistor, Variable, Wirewound (Low Operating Temperature) General

Specification for
MIL-C90 10.1 Capacitor, Fixed, Ceramic Dielectric (Temperature Compensating),

Established Reliability and Nonestablished Reliability, General
Specification for
MIL-R-22 9.1 Resistor, Variable, Wirewound (Power Type), General Specification for
MIL-C-25 10.1 Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed

in Metal Cases), General Specification for
MIL-R-26 9.1 Resistor, Fixed, Wirewound (Power Type), General Specification for
M I L-T-27 11.1 Transformer and Inductors (Audio, Power, High Power Pulse),
General Specification for
MIL-(2-62 10.1 Capacitor, Fixed Electrolytic (DC, Aluminum, Dry Electrolyte,

Polarized), General Specification for
MIL-C-81 10.1 Capacitor, Variable, Ceramic Dielectric, General Specification for
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MIL-C-92 10.1 Capacitor, Variable, Air Dielectric (Trimmer), General Specification for
MIL-R-93 9.1 Resistor, Fixed, Wirewound (Accurate), General Specification for
M IL- R-94 9.14 Resistor, Variable, Composition, General Specification for
MIL-V-95 23.1 Vibrator, Interrupter and Self-Rectifying, General Specification for
w-L-111 20.1 Lamp, Incandescent Miniature, Tungsten Filament
w-c-375 14.5 Circuit Breaker, Molded Case, Branch Circuit and Service
W-F-1726 22.1 Fuse, Cartridge, Class H (this covers renewable and nonrenewable)
W-F-1814 22.1 Fuse, Cartridge, High Interrupting Capacity
MIL-C-3098 19.1 Crystal Unit, Quartz, General Specification for
MIL-C-3607 15.1 Connector, Coaxial, Radio Frequency, Series Pulse, General

Specifications for
MIL-C-3643 15.1 Connector, Coaxial, Radio Frequency, Series HN and Associated

Fittings, General Specification for
Supersedes page 2-1 of Revision F 2-1

flIL-HDBK-217F C H G NOTICE 2 9 9 9 9 9 7 0 0397027 T25
MIL-HDBK-217F
NOTICE 2
2 .O REFERENCE DOCUMENTS
MIL-C-3650 15.1 Connector, Coaxial, Radio Frequency, Series LC
MIL-C-3655 15.1 Connector, Plug and Receptacle,Electrical (Coaxial Series Twin) and
Associated Fittings, General Specification for
MIL-S-3786 14.3 Switch, Rotary (Circuit Selector, Low-Current (Capacity)), General

Specification for
MIL-S-3950 14.1 Switch, Toggle, Environmentally Sealed, General Specification for
MIL-C-3965 10.1 Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General

Specification for
MIL-(3-5015 15.1 Connector, Electrical, Circular Threaded, AN Type, General

Specification for
MIL-F-5372 22.1 Fuse, Current Limiter Type, Aircraft
MIL-S-5594 14.1 Switches, Toggle, Electrically Held Sealed, General Specification for
MIL-R-5757 13.1 Relays, Electromagnetic,General Specification for
MIL-R-6106 13.1 Relay, Electromagnetic (Including Established Reliability(ER) Types),

MIL-L-6363 20.1 Lamp, Incandescent, Aircraft Service, General Specification for
MIL-S-8805 14.1,14.2 Switches and Switch Assemblies, Sensitive and Push (Snap Action),
MIL-S-8834 14.1 Switches, Toggle, Positive Break, General Specification for
MIL-S-8932 14.1 Switches, Pressure, Aircraft, General Specification for
MIL-S-9395 14.1 Switches, Pressure, (Absolute, Gage, and Differential), General

Specification for
MIL-S-9419 14.1 Switch, Toggle, Momentary Four Position On, Center Off, General
Specification for
MIL-"10304 18.1 Meter, Electrical Indicating, Panel Type, Ruggedized, General

Specification for
MIL-R-10509 9.1 Resistor, Fixed Film (High Reliability), General Specification for
MIL-C-10950 10.1 Capacitor, Fixed, Mica Dielectric, Button Style, General Specification
for
MIL-C-11015 10.1 Capacitor, Fixed, Ceramic Dielectric (General Purpose), General

Specification for
MIL-C-11272 10.1 Capacitor, Fixed, Glass Dielectric,General Specification for
2-2
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page
Supersedes 2-2 of Revision F
MIL-HDBK-217F CHG NOTICE 2 9 9 9 9 7 7 0 0197028 961
MIL-HDBK-217F
NOTICE 2
~~~~
2 . O REFERENCE DOCUMENTS
MIL-C-I 1693 10.1 Capacitor, Feed Through, Radio Intederence Reduction AC and DC,
(Hermetically Sealedin Metal Cases) Established and Nonestablished
Reliability, General Specification for
MIL-R-1 1804 9.1 Resistor, Fixed, Film (Power Type), General Specification for
MIL-S-12211 14.1 Switch, Pressure
MIL-S-12285 14.1 Switches, Thermostatic
MIL-S-12883 15.3 Sockets and Accessories for Plug-ln Electronic Components, General
Specification for
MIL-C-12889 10.1 Capacitor, By-pass, Radio - Interference Reduction, Paper Dielectric,

AC and DC, (Hermetically Sealed in Metallic Cases), General
Specification for
MIL-R-12934 9.1 Resistor, Variable, Wirewound. Precision, General Specification for
M IL-S-13484 14.1 Switch, Sensitive: 30 Volts Direct Current Maximum, Waterproof
MIL-C-13516 14.2 Circuit Breakers, Manual and Automatic (28

Volts DG)
MIL-S-13623 14.1 Switches, Rotary: 28 Volt DC
MIL-R-13718 13.1 Relays, Electromagnetic 24 VoltDC
MIL-S-13735 14.1 Switches, Toggle: 28 Volt DC
MIL-G14409 10.1 Capacitor, Variable (Piston Type; Tubular Trimmer), General

Specification for
MIL-F-15160 22.1 Fuse, Instrument, Power and Telephone
MIL-S-15291 14.1 Switches, Rotary, Snap Action and DetenVSpring Return Action,
MIL-C15305 11.2 Coils, Electrical, Fixed and Variable, Radio Frequency, General
Specification for
MIL-GI5370 15.1 Couplers, Directional, General Specification for
MIL-F-15733 21.1 Filters and Capacitors, Radio Frequency Interference, General

Specification for
MIL-S-15743 14.1 Switches, Rotary, Enclosed
MIL-G18312 10.1 Capacitor, Fixed, Metallized (Paper, Paper Plastic or Plastic Film)
Dielectric, Direct Current (Hermetically Sealed
in Metal Cases), General
Specification for
MIL-F-18327 21 .i Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual
Functioning, General Specification for
page
Supersedes 2-3 of Revision F 2-3
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MIL-HDBK-217F CH6 N O T I C E 2 H 9999970 0197029 8 T 8
MIL-HDBK-217F
NOTICE 2
MIL-R-18546 9.1 Resistor, Fixed, Wirewound (Power Type, Chassis Mounted), General
Specification for
MIL-S-19500 6.0 Semiconductor Device, General Specification for
MIL-R-19523 13.1 Relays, Control
MIL-R-19648 13.1 Relay, Time, Delay, Thermal, General Specificationfor
MIL-C-19978 10.1 Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Sealed in Metal, Ceramic or Glass Cases), Established and
Nonestablished Reliability, General Specification for
MIL-T-21038 11.1 Transformer, Pulse, Low Power, General Specification for
MIL-C-21097 15.1 Connector, Electrical, Printed Wiring Board, General Purpose, General
Specification for
MIL-S-21277 14.1 Switches, Liquid Level, General Specification for
MIL-C-21617 15.1 Connectors, Plug and Receptable- Electrical Rectangular, Polarized

Shell, Miniature Type
MIL-R-22097 9.1 Resistor, Variable, Nonwirewound (Adjustment Types), General

Specification for
MIL-S-22614 14.1 Switches, Sensitive
MIL-R-22684 9.2 Resistor, Fixed, Film, Insulated, General Specification for
MIL-S-22710 14.4 Switches, Code Indicating Wheel (Printed Circuit), (Thumbwheel, In-line
and Pushbutton), General Specification for
MIL-S-22885 14.1 Switches, Pushbutton, Illuminated, General Specification for
MIL-C-22992 15.1 Connectors, Plugs and Receptacles, Electrical, Water-Proof, Quick

Disconnect, Heavy Duty Type, General Specification for
MIL-C23183 10.1 Capacitors, Fixed or Variable, Vacuum

or Gas Dielectric, General
Specification for
MIL-C-23269 10.1 Capacitor, Fixed, Glass Dielectric, Established Reliability, General

Specification for
MIL-R-23285 9.1 Resistor, Variable, Nonwirewound, General Specification for
MIL-F-23419 22.1 Fuse, Cartridge, Instrument Type, General Specification for
MIL-T-23648 9.1 Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General

Specification for
MS-24055 15.1 Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts,

Female, 7.5 Amps
MS-24056 15.1 Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts, Male,

7.5 Amps
2-4 Supersedes page 2-4 of Revision F

MIL-HDBK-ZL7F C H G N O T I C E 2 = 9777770 0377030 5LT
MIL-HDBK-217F
NOTICE 2
2 . O REFERENCEDOCUMENTS
MIL-C-24308 15.1 Connectors, Electric, Rectangular, Nonenvironmental, Miniature,

Polarized Shell, Rack and Panel, General Specification for
MIL-S-24317 14.1 Switches, Multistation, Pushbutton (Illuminated and Non-Illuminated),

General Specificationfor
16
M IL-C-255 15.1 Connector, Electrical, Miniature, Coaxial, Environment Resistant Type,
M IL-C-26482 15.1 Connector, Electrical (Circular, Miniature, Quick Disconnect,

Environment Resisting), Receptacles and Plugs, General Specification
for
MIL- C-26500 15.1 Connectors, General Purpose, Electrical, Miniature, Circular,

Environment Resisting,General Specification for
MIL-R-27208 9.1 Resistor, Variable, Wirewound, Nonprecision, General

Specification for
MIL-G28731 15.1 Connectors, Electrical, Rectangular, Removable Contact, Formed

Blade, Fork Type (For Rack and Panel and Other Applications), General
Specification for
MIL-G28748 15.1 Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder
Type and Crimp Type Contacts, General Specification for
MIL-R-28750 13.2 Relay, Solid State, General Specification for
MIL-C-28804 15.1 Connectors, Plug and Receptacle, Electric Rectangular, High Density,
Polarized Center Jackscrew,General Specification for, Inactive for New
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Designs
MIL-C-28840 15.1 Connector, Electrical, Circular Threaded, High Density,High Shock

Shipboard, Class D, General Specification for
MIL-M-38510 5.0 Microcircuits, General Specification for
MIL-S-38533 15.3 Sockets, Chip Carrier, Ceramic,General Specification for
MIL-H-38534 5.0 Hybrid Microcircuits, General Specification for
MIL-1-38535 5.0 Integrated Circuits (Microcircuits) Manufacturing,General

Specification for
MIL-G38999 15.1 Connector, Electrical, Circular, Miniature, High Density, Quick

Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment
Resistant, Removable Crimp and Hermetic Solder Contacts, General
Specification for
MIL-C-39001 10.1 Capacitor, Fixed, Mica-Dielectric, Established Reliability, General

Specification for
MIL-R-39002 9.1 Resistor, Variable, Wirewound, Semi-Precision, General Specification

for
MIL-G39003 10.1 Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum,

Established Reliability, General Specification for
Supersedes page 2-5of Revision F 2-5

M I L - H D B K - 2 1 7 FC H GN O T I C E 2 9 9 9 9 9 7 0 OL9703L 456
MIL-HDBK-217F
NOTICE 2
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MIL-R-39005 9.1 Resistor, Fixed, Wirewound (Accurate), Established Reliability, General

Specification for
MIL-G39006 10.1 Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum
MIL-R-39007 9.1 Resistor, Fixed, Wirewound (Power Type), Established Reliability,
MIL-R-39008 9.1 Resistor, Fixed, Composition (Insulated), Established Reliability,
MIL-R-39009 9.1 Resistor, Fixed, Wirewound (Power Type, Chassis Mounted)
MIL-G3901O 11.2 Coils, Electrical, Fixed, Radio Frequency, Molded, Established
MIL-G39012 15.1 Connector, Coaxial, Radio Frequency, General Specification for
MIL-G39014 10.1 Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established
MIL-R-39015 9.1 Resistor, Variable, Wirewound (Lead Screw Actuated), Established
MIL-R-3901 6 13.1 Relay, Electromagnetic, Established Reliability, General Specification
for
MIL-R-39017 9.1 Resistor, Fixed, Film (Insulated), Established Reliability, General
Specification for
MIL-G39018 10.1 Capacitor, Fixed, Electrolytic (Aluminum Oxide), Established Reliability
and Nonestablished Reliability, General Specification for
MIL-C-39019 14.5 Circuit Breakers, Magnetic, Low Power, Sealed, Trip-Free, General
Specification for
MIL-G39022 10.1 Capacitors, Fixed, Metallized, Paper-Plastic Filmor Plastic Film
Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal
or Ceramic Cases), Established Reliability, General Specification for
MIL-R-39023 9.1 Resistor, Variable, Nonwirewound, Precision, General Specification for
MIL-R-39035 9.1 Resistor, Variable, Nonwirewound (Adjustment Type), Established
MIL-S-45885 14.1 Switch, Rotary
MlL-G49142 15.1 Connectors, Plugs and Receptacle, Electrical Triaxial, Radio
Frequency, General Specification for
MIL-G55074 15.1 Connectors, Plug and Receptacle, Telephone, Electrical, Subassembly
and Accessories and Contact Assembly, Electrical, General
Specification for
MIL-P-55110 15.2 Printed Wiring Board, General Specification
for
MIL-R-55182 9.1 Resistor, Fixed, Film, Established Reliability, General Specification for
2-6 page

MIL-HDBK-217F C H G N O T I C E 2 9999970 0397032 392
MIL-HDBK-217F
NOTICE 2
2 . 0 REFERENCE DOCUMENTS
MIL-G55235 15.1 Connectors, Coaxial, Radio Frequency, Series TPS

MIL-G55302 15.1 Connector, Printed Circuit, Subassembly and Aocessories
MIL-A-55339 15.1 Adaptors, Connector, Coaxial, Radio Frequency, (Between Series and
Within Series), General Specification for
MlL-R-55342 9.1 Resistors, Fixed, Film, Chip, Established Reliability, General
Specification for
MIL-C-55365 10.1 Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability,
MIL-S-55433 14.1 Switches, Reed, General Specification for
MIL-G55514 10.1 Capacitors, Fixed, Plastic (or Metallized Plastic) Dielectric, DC or DC-
AC, In Non-Metal Cases, Established Reliability, General Specification
for
MIL-G55629 14.5 Circuit Breaker, Magnetic, Unsealed, or Panel Seal, Trip-Free, General
Specification for
MIL-T-55631 11.1 Transformer, Intermediate Frequency, Radio Frequency and
Discriminator, General Specification for
MIL-G55681 10.1 Capacitor, Chip, Multiple Layer, Fixed, Unencapsulated Ceramic
Dielectric, Established Reliability, General Specification for
MIL-G81511 15.1 Connector, Electrical, Circular, High Density, Quick Disconnect,
Environment Resisting and Accessories, General Specification for
MIL-S-81551 14.1 Switches; Toggle, Hermetically Sealed, General Specification for

MIL-C-81659 15.1 Connectors, Electrical Rectangular, Crimp
Contact
MIL-S-82359 14.1 Switch, Rotary, Variable Resistor Assembly Type
MIL-G83383 14.5 Circuit Breaker, Remote Control, Thermal, Trip-Free, General
Specification for
MIL-R-83401 9.1 Resistor Networks, Fixed, Film and Capacitor-Resistor Networks,
Ceramic Capacitors and Fixed Film Resistors, General Specification for
MIL-C83421 10.1 Capacitors, Fixed Metallized Plastic Film Dielectric (DC, AC or DC
and AC) Hermetically Sealed in Metal or Ceramic Cases, Established
MIL-C83446 11.2 Coils, Radio Frequency, Chip, Fixed or Variable, General Specification
for
MIL-C83500 10.1 Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Cathode,
MIL-S-83504 14.1 Switches, Dual In-line Package (DIP), General Specification for
MIL-C-83513 15.1 Connector, Electrical, Rectangular, Microminiature, Polarized Shell,
New Page 2-7

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M I L - H D B K - 2 1 7CFHN6O T I C E 2 m 9999970 0397033 2 2 7
MIL-HDBK-217F
NOTICE 2
2 . O REFERENCEDOCUMENTS
MIL-C-83515
Connectors,
15.1 Telecommunication,
Polarized
Shell, General Specification
for
MIL-R-83516
Relays,
13.1
Reed,
Dry, General Specification for
MIL-C-83517 15.1
Connectors,
Coaxial, Radio
Frequency
Coaxial,
for Strip or Microstrip
Transmission Line, General Specification for
MIL-R-83520
Relays,
13.1
Electromechanical,
General
Purpose,
Non-Hermetically
Sealed,
Plastic Enclosure (Dust Cover),General Specification for
MIL-C-83527
15.1
Connectors,
Receptacle,
Plug
and Electrical,
Rectangular
Multiple
Insert Type, Rackto Panel, Environment Resisting,15OOC Total
Continuous Operating Temperature, General Specification for
MIL-R-83536
Relays,
13.1
Electromagnetic,
Established
Reliability, General Specification
for
MIL-C-83723
Connector,
15.1 Electrical (Circular
Environment
Resisting),
Receptacles
and Plugs, General Specification for
MIL-R-83725
Relay,
Vacuum,
13.1
General
Specification
for
MIL-R-83726
13.1,
13.2,
Relays, Hybrid and Solid
State,
Time
Delay, General Specification
for
13.3
14.1 MIL-S-83731 Switch, Toggle, Unsealed and Sealed Toggle, General Specification for
MIL-G83733 15.1 Connector, Electrical, Miniature, Rectangular Type, Rackto Panel,

Environment Resisting, 200°C Total Continuous Operating
Temperature, General Specification for
MIL-S-83724
15.3
Sockets, Plug-ln Electronic
Components, Dual-ln-Line (DIPS)
and
Single-ln-Line Packages (SIPS), General Specification for
MIL-C-85028
Connector,
15.1 Electrical,
Rectangular,
Individual
Contact
Sealing,
Polarized Center Jackscrew, General Specification for
STANDARD TITLE
MIL-STD-756
Reliability
Prediction
Modeling
and
MIL-STD-883
Test
Methods
Procedures
and for Microelectronics
MIL-STD-975
NASA
Standard
Electrical,
Electronic
and
Electromechanical
(EEE)
Parts
List
MIL-STD-1547 Electronic Parts, Materials and Processes for Space and Launch Vehicles,
Technical Requirements for
MIL-STD-1772
Certification
Requirements
for
Hybrid
Microcircuit
Facilities
and
Lines
Copies of specifications and standards required by contractors in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting officer. Single
copies are also available(without charge) upon written requestto:
Standardization Document Order Desk, 700 Robins Ave., Building 4, Section D,
Philadelphia, PA 19111-5094, (215) 697-2667
2-8 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
New Page

MIL-HDBK-217F RE m 9999970 0070706 9
MIL-HDBK-217F
3.O INTRODUCTION
.
-
3. I Rellablllty Englneerlng Reliability is currentlyrecognized as an essential need in military
electronic systems. It is looked upon as a means for reducing costs from the factory, where rework of
defective components adds a non-productive overhead expense, to the field, where repair costs include
not only parts and laborbut also transportation and storage. More importantly, reliability directly impacts
force effectiveness, measured in terms of availability or sortie rates, and determines the size of the
"logistics tail"inhibiting force utilization.
The achievement of reliability is the function of reliability engineering. Every aspect of an electronic
system, from the purity of materials used in its component devices to the operator's interface, has an
impact on reliability. Reliability engineering must,therefore,be applied throughout the system's
development in a diligent and timely fashion, and integrated with other engineering disciplines.
A variety of reliability engineering fools have been developed. This handbook provides the models
supporting a basictool, reliability prediction.
3.2 -
The Role of Rellablllty Predlctlon Reliability prediction provides the quantitativebaseline
needed to assess progress in reliability engineering. A prediction made of a proposed design may be
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used in several ways.

A characteristic of Computer Aided Design is the ability to rapidly generate alternative solutions to a
particular problem. Reliability predictions for each design alternative provide one measure of relative worth
which, combined with other considerations, will aid in selecting the bestof the available options.
Once a designis selected, the reliability prediction maybe used as a guide to improvement by showing
the highest contributorsto failure. If the part stress analysis method is used,
it may also reveal other fruitful
areas for change (e.g., over stressed parts).
The impactof proposed design changeson reliability canbe determined only by comparing the reliability
predictions of the existing and proposeddesigns.
The ability of the designto -maintain an acceptable reliability
level under environmental extremes may be
assessed through reliability predictions, The predictions may be used to evaluate the need for
environmental control systems.
The effects of complexity on the probability of mission success can be evaluated through reliability
predictions. The need for redundant or back-up systems may be determined with the aid of reliability
predictions. A tradeoff of redundancy against other reliability enhancing techniques(e.g.: more cooling,
higher part quality, etc.)must be based on reliability predictions coupled with other pertinent
considerations such ascost, space limitations, etc.
For example, ifseveral failures
The prediction will also help evaluate the significance of reported failures.
of one type or component occur in a system, the predicted failure ratecan be used to determine whether
the number of failures is commensurate with the number of components usedin the system, or, that it
indicates a problem area.
Finally, reliability predictionsare useful to various other engineering analyses.As examples, the location
of built-in-test circuitry shouldbe influenced by the predicted failure rates of the circuitry monitored,
and
maintenance strategy plannerscan make use of the relative probabilityof a failure's location, based on
predictions, to minimize downtime. Reliability predictions are also used to evaluate the probabilities of
failure events describedin a failure modes, effects and criiticality analysis (FMECAs).
3-1
. .
: flIL-HDBK-ZL7F RE m 9 9 7 9 9 7 00 0 7 0 7 0 7 0 m
MIL-HDBK-217F
3. O INTRODUCTION
3.3 Limitations of ReliabilityPredlctions - This handbook provides a common basis for

reliability predictions, based on analysisof the best available data at the timeof issue. It is intended to
make reliability prediction as gooda tool as possible. However, like anytool, reliability predictionmust be
used intelligently, with due considerationof its limitations.
The first limitation is that the failure rate models are point estimates which are based on available data.
Hence, they are valid for the conditions under which the data was obtained, and for the devices covered.
Some extrapolation during model development is possible, but the inherently empirical nature of the
models can be severely restrictive. For example, none of the models in this handbook predict nuclear
survivability or the effects of ionizing radiation.
Even when used in similar environments, the differences between system applications can be significant.
Predicted and achieved reliability have always been closer for ground electronic systems than for avionic
systems, because the environmental stresses vary less from system to system on the ground and hence
the field conditions are in general closerto the environment under which the data was collected for the
prediction model.However, failure rates are also impactedby operational scenarios,operator
characteristics, maintenarice practices, measurement techniques and differencesin definition of failure.
Hence, a reliability prediction should never be assumed to represent the expected field reliability as
measured by the user (¡.e., Mean-Time-Between-Maintenance, Mean-Time-Between-Removals, etc.).
This does not negate its value as a reliability engineering tool; note that none of the applications
discussed above requires the predicted reliability to match the field measurement.
Electronic technology is noted for its dynamic nature. New types of devices and new processes are
continually introduced, compounding the difficulties of predicting reliability. Evolutionary changes may be
handled by extrapolation from the existing models; revolutionary changes may defy analysis.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Another limitation of reliability predictions is the mechanics of the process. The part stress analysis
method requires a significant amount of design detail. This naturally imposes a time and cost penalty.
More significantly, many of the details are not available in the early design stages. For this 'reason this
handbook contains both thepad stress analysismethod (Sections 5 through 23)and a simpler parts count
method (AppendixA) which can be used in early design andbid formulation stages.
Finally, a basic limitation of reliability prediction is its dependence on correct application by the user.
Those who correctly apply the models and use the information ina conscientious reliability programwill
find the prediction a useful tool. Those who view the prediction only asa number which must exceed a
specified value can usually find a way to achieve their goal without any impact on the system.
3.4 Part
Stress
Analysls
Predlctlon
-
3.4.1 Applicability This method is applicable when most of the design is completed and a detailed
parts list including part stressesis available. It can also be used during later design phases for reliability
trade-offs vs. part selection and stresses. Sections 5 through 23 contain failure rate models fora broad
variety of parts used in electronic equipment. The parts are grouped by major categories and, where
appropriate, are subgrouped within categories. For mechanical and electromechanical partsnot covered
by this Handbook, referto Bibliography items20 and 36 (Appendix C),
The failure rates presented applyto equipment under normal operating conditions, ¡.e.,with power on and
performing its intended functionsin its intended environment. Extrapolationof any of the base failure rate
models beyond the tabulated values such as high or sub-zero temperature, electrical stress values above
1.0, or extrapolation of any associated model modifiers is completely invalid. Base failure rates can be
interpolated between electrical stress values fromO to 1 using the underlying equations.
The general procedure for determining a board level (or system level) failure rate is to sum individually
calculated failure ratesfor each component. This summation is then added to a failure rate for the circuit
board (which includes the effects of soldering parts to it) using Section 16, Interconnection Assemblies.
3-2
NIL-HDBK-217F RE M 9 9 9 9 7 7 0 0070708 2 1
MIL-HDBK-217F
3.0 INTRODUCTION
. For parts or wires soldered together (e.g.,'a jumper wire between two parts), the connections model
appearing in Section 17 is used. Finally, the effectsof connecting circuit boards together
is accounted for
by adding in a failure rate for each connector (Section 15, Connectors). The wire between connectorsis
assumed to have a zero failurerate. For various serviceuse profiles, duty cycles and redundancies the
procedures describedin MIL-STD-756, Reliability Modeling and Prediction, shouldbe used to determine
an effective system level failure rate.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
3.4.2 Part Quallty .The quality of a part hasa direct effecton the part failure rate and appears in the
part models as a factor, ZQ. Many parts are coveredby specifications that have several quality levels,
hence, the part models have values of na that are keyedto these quality levels. Such parts with their
quality designators are shown in Table 3-1. The detailed requirements for these levels are clearly defined
in the applicable specification, except for microcircuits. Microcircuits have quality levels which are
dependent on the number of MIL-STD-883 screens(or equivalent) to which they are subjected,
Table 3-1: Parts WlthMuitl-LevelQualitySpecifications

Quality Designators
SIB,B-1 ,Other: Quality Judged by

Microcircuits Screening Level
Discrete Semiconductors JANTXV, JANTX, JAN
Capacitors, Established D, C, SIR, B, P, M, L
Reliability (ER)
Resistors, Established SIR, P, M
Reliability (ER)
Coils, Molded, R.F.,
Reliability (ER)
Relays, Established
Reliability (ER)
Some parts are covered by older specifications, usually referred

to as Nonestablished Reliability(Non-ER),.
two quality levels designatedas
that do not have multi-levels of quality. These part models generally have
"MIL-SPEC.",and"Lower". If the part is procured in complete accordance with the applicable
specification, the ZQ value for MIL-SPEC should be used. If any requirements are waived, or if a
commercial part is procured, theZQ value for Lower shouldbe used.
The foregoing discussion involves the "as procured" part quality. Poor equipment design, production,
and testing facilities can degrade part quality. The use of the higher quality parts requires a total
equipment design and quality control process commensurate with the high part quality.It would make little
sense to procure high quality parts onlyto have the equipment production procedures damage the parts
or introduce latent defects. Total equipment program descriptions as they might vary with different part
qualitymixes is beyond thescope of this Handbook. Reliability managementand quality control
procedures are described in other DoD standards and publications. Nevertheless, when a proposed
equipment development is pushing the state-of-the-art and has a high reliability requirement
W equipment program should be given careful scrutiny and not just
necessitating high quality parts, the
3-3
MIL-HDBK-217F RE 99799700070709 4
MIL-HDBK-217F
3. O INTRODUCTION
the parts quality. Otherwise, the low failure ratesas predicted by the models forhigh quality parts will not
.
be realized.
3.4.3 Use Environment -
All part reliability models include the effects of environmental stresses
through the environmental factor, K E , except for the effects of ionizing radiation. The descriptions of
these environmentsare shown in Table 3-2.The zE factor is quantified within each part failure rate model.
These environments encompass the major areas of equipment use. Some equipment will experience
more than one environment during its normal use, e.g., equipment in spacecraft. In such a case, the
reliability analysis should be segmented, namely, missile launch (ML) conditions during boost into and
return fromorbit, and space flight(SF) while in orbit.
Table 3-2: Environmental Symbol andDescription
Equivalent .
MIL-HDBK-217E,
Notice 1
Environment ITESymbol RE Symbol .Description
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
~~ ~~
Ground, Benign GB Nonmobile, temperature and humidity

controlled environments readily accessible to
maintenance; includes laboratory instruments
and test equipment, medical electronic
equipment, business and scientific computer
complexes, and missiles and support
equipment in ground silos,
Ground, Fixed GF Moderately controlled environments such as

installation in permanent racks with adequate
cooling air and possible installation in unheated
buildings; includes permanent installationof air
traff ¡c control radar and communications
facilities.
. .
Ground, Mobile Equipment installed on wheeled or tracked
vehicles and equipment manually transported;
includes tactical missile ground support
equipment, mobile communication equipment,
tactical fire direction systems, handheld
cammunications equipment, laser designations
and range finders.
Naval, Sheltered Includes sheltered orbelow deck conditions on

surface ships and equipment installed in
submarines.
Naval, Unsheltered Unprotected surface shipborne equipment

exposed to weather conditions and equipment
immersed in salt water. Includes sonar
equipment and equipment installed on hydrofoil
vessels.
3-4
MIL-HDBK-217F RE W 9999770 0070710 O
MIL-HDBK-217F
3.0 INTRODUCTION
Table 3-2: Environmental Symbol and, Descrlptlon (cont’d)
Equivalent
MIL-HDBK-217E,
Notice 1
Environment “E Symbol Description
Airborne,’lnhabited, AIC Typical conditions in cargo compartments

Cargo which can be occupied by an aircrew.
AIT Environment extremes of pressure,
temperature, shock and vibration are minimal.
Examples include long mission aircraft such as
the C130, C5,B52, and C141. This category
also applies to inhabited areas in lower
performance smaller aircraft such as the T38.
. .
Airborne, Inhabited, AIF Same asAIC but installed on high performance
Fighter aircraft such as fighters and interceptors.
AIA
Examples include the F15, F1 6, F111, FIA 18
and A l O aircraft.
Airborne, Uninhabited, AUC Environmentally uncontrolled areas which

cargo cannot be inhabited by an aircrew during flight.
Alm Environmental extremes,of pressure,
AUB temperature and shock may be severe.
Examples include uninhabited areas of long
mission aircraft such as the C130,CS, B52 and
C141, This category also applies to
uninhabited areaof lower performance smaller
aircraft such as the T38.
Airborne, AUF Same as AUC but installed on high performance

Uninhabited, aircraft such as fighters and interceptors.
Fighter %A
Examples include the F15, F16, F1 11 and A10
aircraft.
Airborne, Rotary ARW Equipment installed on helicopters. Applies to

Winged both internally and externally mounted
equipment such as laser designators, fire
control systems, and communications
equipment.
Space, Flight SF Earth orbital. Approaches benign ground

conditions. Vehicle neither under powered
flight nor in atmospheric reentry; includes
satellites and shuttles.
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3-5
MIL-HDBK-217F
3 .O INTRODUCTION
fable 3-2: Environmental Symbol and Description(cont'd)

Equivalent
MIL-HDBKPl7E,
Notice 1
Environment % Symbol Description
~~ ~
Missile, Flight MR Conditions relatedto powered flight of air

breathing missiles, cruise missiles, and
M~~ missiles in unpoweredfree flight.
Missile, Launch ML Severe conditions relatedto missile launch(air,

ground and sea), space vehicle boost into
"SL orbit, and vehicle re-entry andlanding by
parachute. Also applies to solid rocket motor
propulsion powered flight, and torpedo and
* . . missile launch from submarines.
Cannon, Launch CL Extremely severe conditions related to cannon

launching of 155 mm. and 5 inch guided
projectiles. Conditions apply.to the projectile
from launch to target impact.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
-
3 . 4 . 4 Part Failure Rate Models Part failure rate models for microelectronic parts are significantly
different from those for other parts and are presented entirely in Section 5.0. A typical example of the
type of model used for most other part typesis the following one for discrete semiconductors: .
~~=%XT~AXR~S~C"QXE
where:
hp isthepartfailurerate,
hb is the base failure rate usually expressedby a model relating the influence of electrical and
temperature stresseson the part,
XE and the other X factors modify the base failure rate for the category of. environmental
application and other parameters that affect the part reliability..
The zE and zQ factors are used in most all models and otherIC factors apply onlyto specific models. The
applicability of x factorsis identified in each section.
The base failure rate (hb) models are presented in each part section along with identification of the
applicable model factors. Tables of calculated+., values are also provided for usein manual calculations.
The model equations can, of course, be incorporated into computer programsfor machine processing.
The tabulated values of are cut off at the part ratings with regard to temperature and stress, hence, use
of parts beyond these cut off points will overstress the part. The use of the hb models in a computer
3-6
' MIL-HDBK-217F RE m 9 9 9 9 9 7 0 0070712 4 m i
MIL-HDBK-217F
3.0 INTRODUCTION
At, equations are mathematically continuous

program should take the part rating limits into account. The
beyond the part ratings but such failure rate values are in the overstressed regions.
invalid
All the part models include failure data from
both catastrophic and permanent drift failures
(ems.,a resistor
permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for
motors which showan increasing failure rate over time. Failures associated with connection of parts into
circuit assemblies are not included within the part failure rate models. Information
on connection reliability
is provided in Sections 16 and 17.
-
3.4.5 Thermal Aspects The use of this prediction methodrequires the determination of the
temperatures to which the parts are subjected. Since parts reliability is sensitive to temperature, the
thermal analysisof any design should fairly accurately provide the ambient temperatures needed in using
the part models. 01course, lower temperatures produce better reliability but alsocan produce increased
penalties in terms of added loads on the environmental control system, unless achieved through
improved thermal design of the equipment. The thermal analysis should be partof the design process
and included in all the trade-off studies covering equipment performance, reliability, weight, volume,
environmental control systems, etc. References17 and 34 listed in Appendix C may be usedas guides in
determining component temperatures.
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3-7
MIL-HDBK-237F RE m 9999970 0070733 b W ~
MIL-HDBK-217F
4.0 RELIABILITY ANALYSIS EVALUATION
Table 4-1 provides a general c m t to be used as a gui& for evaluating a reliability prediction report.
For completeness, the checklist includes categories for reliability modeling and allocation, which are
sometimes delivered as part of a prediction report. It should be noted that the scope of any reliability
analysis depends on the specific requirements called out in a statement-of-work (SOW) or system
specification. The inclusion of this checklist is not intended to change the scope of these requirements.
Table 4-1: Re1 bllityAnalysisChecklist

Major Concerns Comments
dODELS
Are all functional elements includedin the System design drawings/diagrams must be reviewed to
reliability block diagram /model? be sure thatthe reliability model/diagram agrees with
the
hardware.
Are all modes of operation consideredin the Duty cydes, alternate paths, degraded conditions and
mathnmdel? redundant units mustbe defined and modeled.
Do the math model results show that the design Unit failure ratesand redundancy equations are used
achieves the reliability requirement? from the detailed part predictions
in the system math
model (See MIL-STD-756, Reliability Prediction and
Modeling).
4LLOCATION
. Are system reliability requirements allocated Useful levels are defined as: equipment for
(subdivided) to useful levels? subcontractors, assemblies for sub-subcontractors,
circuit boards for designers.
Does the allocation process consider Conservative values are needed to prevent reallocation
complexity, design flexibility, and safety at every design change.
margins? .
PREDICTION
Does the sum of the parts equal the value of Many predictions neglectto include all the parts producing
the moduleor unit? optimistic results (check for solder connections,
connectors, circuit boards).
Are environmental conditions and part quality Optimistic quality levels and favorable environmental
representative
the
of
requirements? - conditions are often assumed causing optimistic results.
Are the circuit and part temperatures defined Temperature is the biggest driver of part failure rates:
and do they represent the design? low temperature assumptions will &use optimistic
results.
Are equipment, assembly, subassembly and Identification is neededso that corrective actions for
part reliability drivers identified? reliability improvement can be considered.
Are alternate (Non MIL-HDBK-217) failure rates Use of alternate failure rates, if deemed necessary,
highlighted along with the rationale for
their. require submission of backupdata to provide credencein
use? the values.
Each component type should be sampled and failure
Is the levelof detail for thepart failure rate rates completely reconstructed for accuracy.
models sufficient to reconstruct the result?
Prediction methods for advanced technology parts should
Are critical components such as VHSIC, be carefully evaluated for impacton the module and
Monolithic Microwave Integrated Circuits system.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
(MMIC), Application Specific Integrated

Circuits (ASIC) or Hybrids highlighted?
4- 1
MIL-HDBK-217F RE 9999970 0870734 B B
MIL-HDBK-217F
5.0 MICROCIRCUITS, INTRODUCTION
This section presents failure rate prediction

models for the followingten major classes of microelectronic
devices:
Section
5.1 MonolithicBipolarDigitalandLinearGate/LogicArrayDevices
5.1 MonolithicMOSDigitalandLinearGatenogicArrayDevices
5.1MonolithicBipolarand MOS DigitalMicroprocessorDevices

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5.2MonolithicBipolarandMOSMemoryDevices
5.3 VeryHighSpeedIntegratedCircuit(VHSICNHSIC-LikeandVLSI)CMOSDevices (> 60K
Gates)
5.4 Monolithic
GaAs
Digital
Devices
5.4 Monolithic GaAs MMlC
5.5 Hybrid
Microcircuits
5.6 Surface
Acoustic
WaveDevices
5.7 Magnetic
Bubble
Memories
In the title descriptionof each n&nolithic device type, Bipolar representsall TTL, ASTTL, DTL, ECL, CML,
ALSTTL, HlTL, RTL, F, LTTL, STTL, BiCMOS, LSTTL, IIL, 13L and ISL devices. MOS represents all
metal-oxide microcircuits, which includes NMOS,PMOS,CMOS and MNOS fabricated on various
substrates such as sapphire, polycrystalline or single crystal silicon. The hybrid model is structured to
accommodate all of the monolithic chip device types and various complexity levels.
Monolithic memory complexity factors are expressedin the number of bits in accordance with JEDEC STD
21A. This standard, which is used by all government and industry agencies that deal with microcircuit
memories, states that memories of 1024bits and greater shallbe expressed as K bits,. where 1 =K1024
bits. For example, a 16K memory has 16,384 bits, a 64K memory has 65,536 bits and a 1M memory has
1,048,576 bits. Exact numbersof bits arenot used for memories of 1024 bits and greater.
For devices havingboth linear and digital functionsnot covered by MIL-M-38510 or MIL-1-38535, use the
linear model. Line drivers and line receivers are considered linear devices. For linear devices not covered
by MIL-M-38510 or MIL-1-38535, use the transistor count from the schematic diagramof the device to
determine circuit complexity.
For digital devices not covered by MIL-M-38510or MIL-1-38535, use the gate count as determined from
the logic diagram. A J-K or R-S flip flop is equivalent to 6 gates when used as ofpart
an LSI circuit. For the
purpose of this Handbook, a gate is considered to be any one of the following functions: AND, OR,
exclusive OR, NAND, NOR and inverter. When alogic diagram is unavailable, use device transistor count
to determine gate count using the following expressions:
Technoloav
Bipolar No. Gates= No. Transistors/3.0
CMOS No. Gates= No. Transistors/4.0
All other MOS except CMOS No. Gates = No. Transistors/3.0
5-1
MIL-HDBK-ZL7F RE W 9997970 00707115 T W
MIL-HDBK-21I F
5.0 MICROCIRCUITS, INTRODUCTION
A detailed form of the Section 5.3 VHSICNHSIC-Like model is included as Appendix B to allow more
detailed trade-offs to be performed. Reference 30 should be consultedfor more information about this
model.
Reference 32 should be consulted for more information about the models appearing in Sections5.1, 5.2,
5.4,5.5, and 5.6. Reference 13 should be consulted for additional information on Section 5.7.
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C H G NOTICE 2
NIL-HDBK-~IJ~F = 9999970 OL9703Y 165
MIL-HDBK-217F
NOTICE 2
5.1 MICROCIRCUITS,
GATE/LOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital and Linear Gate/Logic Arrays
2. MOS Devices, Digital and Linear Gate/Logic Arrays
3. Field ProgrammableLogicArray(PLA)and
Programmable Array Logic (PAL)
4. Microprocessors
h = ( C 1 q + C27tE) X Q ~ LFailures/lO 6 Hours

P
r- Digital and Linear Gate/Logic Array Die Complexity Failure Rate Cl -

Digital Linear PLA/PAL
No. Gates C1 No. Transistors C1 No. Gates C1
1 to 100 .o025 1 to 100 .o1 o u p to 200 .o1o

101 t o 1,000 .O050 101 to 300 .o20 201 to 1,000 .o2 1
1,001 t o 3,000 .o1 o 301 t o 1,000 .O40 1,001 to 5,000 ,042
3,001 t o 10,000 .o20 1,001 t o 10,000 .O60
10,001 t o 30,000 .O40
30,001 t o 60,000 .O80
MOS Linear and Digital Gate/Logic Array Die Complexity Failure Rate Cl* -
Digital Linear PLA/PAL
No. Gates C1 No. Transistors C1 No. Gates C1
100
1 to .o1 o 1 to 100 .o10 Up to 500 .O0085
101 t o 1,000 .o20 101 to 300 .o20 501 to 1,000 .O017
1,001 t o 3,000 .O40 301 t o 1,000 ,040 2,001 to 5,000 .0034
3,001 t o 10,000 .O80 1,001 t o 10,000 .O60 5,001 to 20,000 .0068
10,001 t o 30,000 .16
t o 60,000 .2930,001
*NOTE: For CMOS gate counts above 60,000 use the VHSICNHSIC-Like model in Section 5.3
MicroDrocessor All Other Model Parameters

Die Complexity Failure Rate - Cl Parameter Refer to
Bipolar MOS
No. Bits Section 5.8
C1 C1
c2 Section 5.9
Up to 8 .O60 .14
Up to 16 .12 .28 XE, ~ Q I XL Section 5.1 O
Up to 32 .56 .24
Supersedes page 5-3 of Revision F --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`--- 5-3

MIL-HDBK-217F CHG N O T I C E 2 = 9999970 0397035 OT3 M
MIL-HDBK-217F
5.2 MICROCIRCUITS, MEMORIES
DESCRIPTION
1. ReadOnlyMemories(ROM)
2. Programmable Read Only Memories (PROM)
3. UltravioletEraseablePROMs(UVEPROM)
4. "Flash,"MNOSandFloatingGate Electrically
EraseablePROMs(EEPROM).Includes both
floating gate tunnel oxide (FLOTOX) and textured
polysilicon type EEPROMs
5. StaticRandomAccessMemories (SRAM)
6. Dynamic Random Access Memories (DRAM)
hp = (C1 XT + C2 X E + hcyc) XQ XL Failures/106 Hours
Die Complexity Failure Rate- C,

MOS Bipolar
PROM, SRAM
UVEPROM, (MOS & ROM,
Memory Size, B (Bits) ROM EEPROM, DRAM BiMOS) SRAM PROM
EAPROM
Up to 16K .O0065 3 .O0085

.O078 .O01 .O094 .O052
16K < B 5 64K .o01 3 7 .O025 .O01 .O1 6 .o1 9 .o1 1
< B S 256K .O026 64K .O034 .O050 .O38 .O31 .o21
cBI1M .O052 256K .O068 .o1 o .O42 .O75 .O62
I
A, Factor for kc c Calculation A2 Factor for hcyc Calculation

1
Total No. of
Programming
Cycles Over
EEPROMLife, C
T+ Flotoxl
Textured-
Poly2
Total No. of
Programming Cycles
Over EEPROM Life, C
Textured-Poly A2
Up to 300K O
u p to 100 .O0070 .O097
100 c c 5 200 .O01 4 .O1 4 300K < C S 400K 1.1
200 < C S 500 .O034 .O23
500cC51K .O068 .O33 400K c C I500K 2.3
1K<C13K .o20 .O61
3K c C S 7K .O49 .14 All Other Model Parameters
7K<CI15K .1o .30 Parameter I Refer to
.14 .30
15K C 5 20K
20K c C I 30K
30K C 5 100K
.20
.68
.30
.30 I *T
1 Section 5.8
lOOK < C S 200K
200K C 5 400K
400K < C I500K
1.3
2.7
3.4
.30
.30
.30
I XE, XQI XL
I Section 5.9
Section 5.1O
1. A, = 6.817 X (C) hcyc(EEPROMS Page 5-5

2. No underlying equation for Textured- only)
Poly.
1 hcyc= O For all otherdevices
5-4
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MIL-HDBK-217F CHG NOTICE 2 9999970 Ol19703b T38 W
MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NOTICE 2
kYc
EEPROM ReadlWrite Cycling Induced Failure Rate -
I
k y c=O
-
All Memory Devices Except Flotox and
Textured-Poly EEPROMs
Flotox and Textured Poly EEPROMs

&=[AI B1 +
Flotox ed-Pdy
A1 Page 5-4 Page 5-4
B1 Page 5-6 Page 5-6
A2 Az=O Page 5-5
B2 BZ=O Page 5-6
Section 5.10 Section 5.10
Error Correction Code (ECC) Options:

1. No On-Chip ECC
2. On-Chip Hamming Code
3. Two-Needs-One
Redundant Cell Approach
NOTES: i . See Reference24 for modelingoff-chip error detection and correction

schemes at the memory system level.
2. If EEPROM type is unknown, assume Flotox.
3. Error Correction Code Options:Some EEPROM manufacturers have incorporated

on-chip error correction circuitry into
their EEPROM devices. This is representedb)
the on-chip hamming codeentry. Other manufacturers havetaken a redundantcell
in every memory cell. This
approach which incorporates an extra storage transistor
is represented by the two-needs-one redundantcell entry.
4. The Ai and A2 factors shownin Section 5.2 were developed based on an assumec
system life of 10,000 operating hours. For EEPROMs used in systems with
significantly longer or shorter expected lifetimes
the Al and A2 factors should be
multiplied by:
System Lifetime Operating Hours

10,000
page

MIL-HDBK-2L7F CHG NOTICE 2 = 9999970 0397037 974
MIL-HDBK-217F
NOTICE 2
lY c -
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MIL-HDBK-ZL7F
NOTICE L RE 9999970 007bOq3 T
MIL-HDBK-217F
NOTICE 1
5.3 MICROCIRCUITS,
VHSICNHSIC-LIKE AND VLSl
CMOS
DESCRIPTION
CMOS greater than60,000 gates
Die Base Failure Rate- All Other Model Parameters

Parameter i Refer to
Part Type I ]
%T Section 5.8
Logic and Custom 0.16
"Es Section 5.10
Gate Array and Memory 0.24
Package Type Correction Factor- npT
Manufacturing Process Correction Factor ZMFG - I 1 . .

ZPT 1
Packane Type Hermetic I Nonhermetic
Manufacturing
Process I ~MFG 1 1
QML or QPL
Non QMLor Non QPL
Feature Size
*55
2.0
- ICCD
Die Complexity Correction Factor
Pin Grid Array
Chip Carrier
(Surface Mount
Technolo nv)
DIP I I i:! I
2.2
4.7
1,O
Die Area (cm2)

(Microns) A I .4 .4 c A I .7 . 7 c A <1I . O c A S22..00< A I 3 . 0
I .8O 8.0 14 19 58 38
1.o0 5.2 8.9 13 37 25
3.5 1.25 5.8 8.2 16 24
xCD= ((-&) (e- (.64))+ .36 A Total Scribed Chip Die Areaincm2
P X, = Feature Size(microns)
I I
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Die AreaConversion:cm2 = MIL2 f 155,000
Package Base Failure Rate - ARP

W .
ElectricalOverstress Failure Rate Acne
LUV
-
Number of Pins 'B P VTH (ESD Susceptibility (Volts))* AEOS
24 ,0026
28 ,0027 0 - 1000 .065
40 .O029
44 .O030 > 1000 - 2000 .053
48 ,0030
52 .O031 > 2000 4000 - .044
64 ,0033
84 .O036 > 4000 - 16000
120 .O043
124 ,0043
144 .O047
,0060
VTH = ESD Susceptibility (volts)
Number of Package Pins

~ ~ _ _ _ _ _ ~
flIL-HDBK-217F NOTICE I RE 9799970 0 0 7 6 0 9 4 1
MIL-HDBK-217F
5.4 MICROCIRCUITS,GaAsMMlC AND DIGITALDEVICES
DESCRIPTION
Gallium Arsenide Microwave Monolithic Integrated Circuit
(GaAsMMIC) and GaAs Digital Integrated Circuitsusing
MESFET Transistors andGold Based Metallization
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
M:Die Complexity Failure Rates - Cl Device Application Factor ITA -

Complexity
(No. of Elements)
C1 I Application
MMlC Devices
1 to 100 Low Noise & Low Power (I 100 mW)
Driver & High Power (> 100 mW)
Unknown
1 . Cl accounts for the following active
elements: transistors, diodes.
Digital Devices
Applications
DigitalAll 1.o
U:Die Complexity Failure Rates - Cl

Complexity Cl
(No. of Elements) All Other Model Parameters
Parameter I Refer to
1 to 1000
KT Section 5.8
1. Cl accounts for the following active c2 Section 5.9

elements: transistors, diodes.
XE, XLI XQ Section 5.1 O
5-8
MIL-HDBK-217F
NOTICE 2
5.5 MICROCIRCUITS,
HYBRIDS
DESCRIPTION
Hybrid Microcircuits
,X, = [ Z Nc kc J (1 + .2 K E ) KF KQ ‘tL Failures/l O6 HOUE
Nc = Number of Each Particular Component

LC = Failure Rateof Each Particular Component
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate
for each component type used in the hybrid and then sum them. This summation is then modified to
account for the overall hybrid function (zF), screening level (W),and maturity (xL). The hybrid package
failure rate is a function of the active component failure modified by the environmental factor(¡.e., (1 + .2
zE) ). Only the component types listed in the following table are considered to contribute significantly to
the overall failure rate of most hybrids. All other component types (e.g., resistors, inductors, etc.) are
considered to contribute insignificantlyto the overall hybrid failure rate, and are assumed to have a failure
rate of zero. This simplification is valid for most hybrids; however,if the hybrid consistsof mostly passive
components then a failure rate should be calculated for these devices. If factoring in other component
types, assume KQ = 1, X;E=1 andTA = Hybrid Case Temperaturefor these calculations.
Determination of h,-
Determine LCfor These Handbook Section Make These Assumptions When Determining
Component Types AC
Microcircuits 5 C2 = O, KQ = 1, ZL = 1, TJ as Determined from

Section 5.12, = O (for VHSIC).
Discrete Semiconductors 6 ZQ = 1, xA = 1, TJ as Determined from Section

6.14, ICE= 1.
Capacitors 10 XQ = 1, TA = Hybrid Case Temperature,
I
np= 1.
NOTE: If maximum rated stress fora die is unknown, assume the same as for a discretely package
die of the same type. If the same die has several ratings based
on the discrete packaged
type, assume the lowest rating. Power ratingused should be basedon case temperature
for discrete semiconductors.
Circuit Function Factor- nF

Circuit Type “F 5.10
Refer to Section
Digital 1.o
Video, 10 MHz c f c 1 GHz 1.2
f > 1 GHz 2.6 Microwave,
Linear, f c 10 MHz 5.8
Power 21
Supersedes page 5-9 of Revision F, Notice 1 5-9

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flIL-HDBK-2L7F CHG N O T I C E 2 rn q q q q q 7 0 0397039 7 4 7
MIL-HDBK-217F
5.6 MICROCIRCUITS, SAW DEVICES

DESCRIPTION
'SurfaceAcoustic Wave Devices
A., = 2.1 ZQ XE FailuresllO6 Hours
Quality Factor- TCQ Environmental Factor - E

Screening Level "Q Environment "E
GB .5
1O Temperature Cycles (-55°C to .1o
+125"C) with end point electrical GF 2.0
tests at temperature extremes.
GM 4.0
None beyond best commerical 1 .o 4 .O
practices. NS
NU 6.0
4.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
AIC
AIF 5 .O
AUC 5 .O
AUF 8 .O
ARW 8 .O
SF .50
MF 5 .O
ML 12
CL 220
5-1O

MIL-HDBK-217F
5.7 MICROCIRCUITS,
MAGNETIC
BUBBLE MEMORIES
The magnetic bubble memory device in its present form is a non-hermetic assembly consisting of the
following two major structural segments:
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
1. A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor
loops), and required control and detection elements (e.g., generators, various gates and
detectors).
2. A magnetic structure to provide controlled magnetic fields consisting of permanent magnets,

coils, and a housing.
These two structural segments of the device are interconnected by a mechanical substrate and lead
frame. The interconnect substrate in the present technology is normally a printed circuit board. It should
be noted that this model does not include external support microelectronic devices requiredfor magnetic
bubble memory operation. The model is based on Reference 33. The general form of the failure rate
model is:
hp = hl + h2 Failures/106 Hours
where:
X, = Failure Rate of the Control and Detection Structure
h, = Failure Rateof the Memory Storage Area
Chips Per Package NC- Device Complexity Failure Rates for Control and
I 1 Detection Structure C, .I and Ca, -
I
NC = Number of BubbleChips per
Packaged Device
I
I
C11 =
C21 =
.00095(N1).40
.0001(N1)*226
Temperature Factor- "T
N1 = Number of DissipativeElements
on aChip (gates, detectors,
generators, etc.), N1 I 1000
Use:
Ea = .8 to Calculate
Ea = 55 to Calculate nT2
TJ = JunctionTemperature (OC),
25 I T J I 1 7 5

- ~____
MIL-HDBK-217F N O T I C E I RE 7777970 0076078 7
MIL-HDBK-217F
NOTICE 1
5.7 MICROCIRCUIT,
MAGNETIC BUBBLE MEMORIES
Write Duty Cycle Factor- nW Device Complexity Failure Rates for Memory
1. OD Storage Structure- C12 and CZ2
“W = - ”
( R N ).3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
C12 = .00007(N2)*3
“W = 1 for D I.O3or R/W 2 2154
c22 = .00001(~~)~3
Avq. Device Data Rate
D = “
Mfg. Max. Rated Data Rate
N2 = Number of Bits, N2 I 9 x lo6
WW = No. of ReadsperWrite
NOTE:
For seed-bubble generators, divide All Other Model Parameters
nw by 4, or use 1, whicheveris Parameter Section
Ireater.
c2
I 5.9
Duty Cycle Factor- “D I 5.10
D =
Avg. Device Data Rate
Mfg. Max. Rated Data Rate
I,

MIL-HDBK-217F
NOTICE 1
5.8 MICROCIRCUITS, KT TABLE FOR ALL
0 1 I
I I
I I

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-~ ~~~
UIL-HDBK-ZL7F N O T I C E L RE 9799970 0 0 7 b L O O 3
MIL-HDBK-217F
5.9 MICROCIRCUITS, Cp TABLE FOR ALL
Package Failure Rate for all Microcircuits - c2

Package Type
Hermetic: DlPs I i Nonhermetic:
w/Solder or
Number of Weld Seal, Pin DlPs with Glass Flatpacks with cans4 DIPS, PGA,
Functional Grid Array Seal2 Axial Leads on SMT (Leaded
Pins, Np ( P G A ) ~SMT
, 150 Mil Centers3 and
(Leaded and N~nleaded)~
Nonleaded)
i
3 .O0092 .O0047 .o0022 .O0027 .o01 2
4 .O013 .O0073 .O0037 .O0049 .O01 6
6 ,0019 .O013 .O0078 .o01 1 .0025
,0026 ,0021 .O013 ,0020 .0034
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
8
10 ,0034 .O029 .o020 .O031 .0043
12 .O041 .O038 .O028 .O044 ,0053
14 .O048 .O048 .O037 ,0060 .0062
16 .O056 .O059 .O047 .O079 ,0072
18 .O064 .O071 .O058 .0082
22 ,0079 .O096 .O083 .o1 o
24 .O087 .o 1 1 .O098 .o1 1
28 .o1o .O14 .O13
36 .O13 .o20 .O17
40 .O 15 .O24 ,019
64 .O25 .O48 .032
80 .O32 .041
128 .O53 .068
180 .O76 .098
224 .O97 .i2
NOTES:
1. SMT: Surface MountTechnology

2. DIP: Dualln-LinePackage
3. If DIP Seal type is unknown, assume glass
4. The package failure rate (C2) accounts for failures associated only withthe package itself.
Failures associatedwith mounting the package to a circuit board are accountedfor in
Section 16, Interconnection Assemblies.
5-14
MIL-HDBK-217F RE 9999970 0070728 8
MIL-HDBK-217F
5.10 MICROCIRCUITS, ZE, AL AND ZQ TABLES FOR ALL
Environment Factor- ICE Quality Factors - zc
.F
Environment "E Description "Q
50
2.0 I Glass S Cateaories:
GM 4.0 1: Procured in full accordance

with MIL-M-3851 O, Class S
NS .. 4.0 requirements.
NU 6.0
2. Procured in full accordance .25
AIC 4.0 with MIL-1-38535 and
5.0 Appendix B thereto (Class U).
AIF
AUC 5.0 3.Hybrids:(Procured to Class
8.0 S requirements (Quality Level
*U.F K) of MIL-H-38534.
. ARW
8.0
SF SO.
Class R Cateaories;
MF 5.0
ML 12 1. Procuredin full accordance
with MIL-M-38510, ClassB
CL 220 requirements.
-
Learning Factor "L 2.Procured in full accordance
with MIL-1-38535, (ClassQ).
1.o
Years in Production, Y "L

~..1
I 2.0 3.Hybrids:Procured to Class B
requirements (Quality Level
.5 1.8
H) of M1L.H-38534.
1 .o 1.5
1.5 1.2
I 2 2.0 I 1 .o
I Glass ß-1 CategpIy;
nL = .O1 exp(5.35 - ,35Y) - Fully compliant with all
requirements of paragraph 1.2.1
of MIL-STD-883 and procuredto a 2.0
Y = Years generic devicetype has been MIL drawing, DESC drawing or
in production other government approved
I 1 documentation. (Does not include
hybrids), For hybrids use custom
screening section below.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
5-15
MIL-HDBK-217F RE 9 9 9 9 9 7 0 0070729 T
. MIL-HDBK-217F
5.10 MICROCIRCUITS, ZE,ZL AND ZQ TABLES FORALL
m
Qualii Factors (cont'd): len Calculation for Custom Screening Pro! s
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Group Point Valuation
1. ior Hybrids) (FinalElect&als @ Temp Extremes) and TM1014 50

(Seal Test,Cond A, B, or C) and TM 2009 (Extemal Visual)
TM 101O (Temwrature Cycle, Cond B Minimum) or TM 2001
(Constant' Acceleration,Cond B Minimum)
2' TM 5004 (or 5008 for Hybrids) (Final Electricals
@ Temp Extremes) 37
and TM 1014 (Seal Test, CondA, B, or C) and TM2009 (External
Visual)
Pre-Bum in Electricals
3 TM 1015 (Burn-in B-LeveVS-Level) and TM 5004 (of 5008 for 30 Level)
(B
Hybrids) (Post Bum-in Electricals@ Temp Extremes) 36 (S Level)
TM 2820 Pind(ParticleImpactNoiseDetection) . 11
TM 5004 (or 5008 for Hybrids) (Final Electncals

@ Temperature 11 (Note 1)
Extremes)
6 TM 2010/17 (InternalVisual) 7
7. TM 1014 (Seal Test, Cond A, B, or C) 7 (Note 2)
TM 2012 (Radiography) 7
TM 2009 (ExtemalVisual) 7 (Note 2)
10 TM 5007/5013 (GaAs) (Wafer Acceptance) 1
11 TM 2023 (Non-Destructive Bond Pull) 1
89
ZQ=2+
. Point
Valuations
'NOT APPROPRIATE FOR PLASTIC PARTS.
NOTES:
1 . Point valuation only assignedif used independent of Groups 1, 2 or 3.
2. Point valuation only assigned if used independentof Groups 1 or 2.
3. Sequencing of tests within groups1, 2 and 3 must be followed.
4. TM refers to the MIL-STD-883 Test Method. r
5. Nonhermetic parts shouldbe used only in controlled environments(Le., GB and other

temperature/humidity controlled environments).
EXAMPLES:
87
1. Mfg. performs Group 1 test and Class B bum-in: XQ =2 + 50+30 = 3.1
87
2. Mfg.performsinternalvisualtest,sealtestandfinalelectricaltest: RQ = 2 + = 5.5
7+7+1
I
Other Commercialor Unknown Screening Levels

I ZQ = 10
5-16
’ MIL-HDBK-217F RE m 9999970 0070730 b m
MIL-HDBK-217F
5.11 MICROCIRCUITS, TJ DETERMINATION, (ALL EXCEPT HYBRIDS)
Ideally, device case temperatures should be determined from a detailed thermal analysis of the
equipment. Device junction temperatureis then calculated with the following relationship:
TJ = Worst CaseJunctionTemperature(“C).
TC = Case Temperature (“C). If not available, use the following default table.
Defautt Case Temperature(Tc) for all Environments

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
I Tc(OC) I 35 45 50 I 45 50 I 60 60 75 75 60 I 35 50 60 45
= Junctionto-case thermalresistawe (OCrWatt) for a device soldered into a printed circuit

board. If eJJc is pot available, use a value contained
in a specification for
the closest
equivalent deviceor use .the following table.
Die Area> 14,400 mi12 eJC

Package Type
(Ceramic Only)
(W
Dual-ln-Line 11 28
Flat Package 10 22
Chip Carrier 10 26
Pin GridArray 10 . 20
Can - 70
P = The maximum power dissipation realized in a system application. If the applied power is
not available, use the maximum power dissipation from the specification for the closest
equivalent device.

I MIL-HDBK-237F R E m 9999970 0070733 B m
MIL-HDBK-217F
5.12 MICROCIRCUITS, TJ DETERMINATION, (FOR HYBRIDS)
This section describes a method for estimating junction temperature (TJ) for integrated circuit dice
mounted in ahybrid package. A hybrid is normally made up of oneor more substrate assemblies mounted
or thin
within a sealed package. Each substrate assembly consists of active and passive chips with thick
film metallization mountedon the substrate, which in turn may have multiple layers of metallization and
dielectric on the surface. Figure 5-1 is a cross-sectional view of a hybrid -with a single multi-layered
substrate.The layers within the hybrid aremade up of various materials with different thermal
characteristics. The table following Figure 5-1 provides a list of commonly used hybrid materials with
(K). If the hybrid internal structure cannot be
typical thicknesses and corresponding thermal conductivities
. determined, use the following default values for the temperature rise from case to junction: microcircuits,
10°C;transistors, 25°C; diodes, 20°C. Assume capacitors areBt Tc.
CHIP (A)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
SUBSTRATE (D)
PACKAGE
CASE (F)
Figure' 5-1: Cross-sectional View of a Hybrld with a Slngle Multl-Layered Substrate

c

M I L - H D B K - ~ I I ~ FN O T I C E II RE m 9 9 9 7 9 7 0 007bLOL 5
MIL-HDBK-217F
NOTICE 1
Typical Hy! id Characteri CS

Thermal
Conductivity,
Typical Feature Ki
Material Typical Usage Thickness, From Figure
Li (in.) 5-1
(%) lin* WW)
Silicon Chip Device 0.01 o A 2.20 ,0045
GaAs Chip Device 0.0070 A .76 .O092
Au Eutectic Chip Attach 0.0001 B 6.9 .o00014
Solder Chip/Substrate Attach 0.0030 B/E 1.3 .O023
Epoxy (Dielectric) Chip/Substrate Attach O. 0035 B/E .O060 ,58
Epoxy (Conductive) Chip Attach 0.0035 B -15 .O23
Thick Film Dielectric Glass Insulating Layer 0.0030 C .66 .O045
Alumina Substrate, MHP 0.025 D .64 ,039
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Beryllium Oxide Substrate, PHP 0.025 D 6.6 .O038

Kovar Case, MHP 0.020 F .42 .O48
Aluminum Case, MHP 0.020 F 4.6 .O043
Copper Case, PHP 0.020 F 9.9 ,0020
P
NOTE: MHP: Multichip Hybrid Package, PHP: Power Hybrid Package (Pwr: 2 2W, Typically)
n P Number of Material
Layers
Ki = ThermalConductivity of thMaterial (E) (UserProvided or FromTable)
Li = Thickness of thMaterial(in)(UserProvided or FromTable)

A = Die Area (in2). If Die Area cannot be readily determined, estimate as follows:
A = [ ,00278 (No.of Die Active Wire Terminals)+ .041q2
TC = Hybrid Case Temperature (OC). If unknown, use the TC Defautt Table shown in Section 5.1 1.
8JC = Junction-to-Case Thermal Resistance (“Cm (As determined above)
PD = DiePowerDissipation (W)
Supersedes
page 5-19 of Revision F 5-19
~~
- ~ "
%
MIL-HDBK-ZL7F N O T I C E L RE 9977970 0076102 7

MIL-HDBK-217F
5.13 MICROCIRCUITS,
EXAMPLES
Example 1: CMOS DlgltalGateArray
Given: A CMOS digital timing chip (4046) in an airborne inhabited cargo application, case temperature
48OC, 75mW power dissipation. The device is procured with normal manufacturer's screening
consisting of temperature cycling, constant acceleration, electrical testing, seal test and external
visual inspection, in the sequence given. The component manufacturer also performs a B-level
burn-in followed by electrical testing. All screens and tests are performedto the applicable MIL-
STD-883 screening method. The packageis a 24 pin ceramic DIP with a glass seal. The device
has been manufacturedfor several years and has 1000 transistors.
c, = .o20 1O00 Transistors = 250 Gates, MOSC, Table, Digital Column
"T = .29 Determine TJ from Section 5.11

TJ = 48OC + (28"C/W)( .075W)= 50°C
Determine "T from Section 5.8, DigitalMOS Column.
Section 5.9
Section 5.10
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Section 5.1 O
Group 1 Tests 50 Points
Group 3 Tests
(B-level) aQedm
TOTAL 80 Points
87
I C Q = ~ + - = 3.1
80
"L = 1 Section 5.1O
hp = [ (.020)(.29) + (.Oll) (4)] (3.1)(1) = .15 Failure/106 Hours
Example 2: EEPROM
Given: A 128K Flotox EEPROM that is expected to have aTJ of 80°C andexperience 10,000
read/write cycles over the life of the system. The part is procured to all requirements of
Paragraph 1.2.1, MIL-STD-883,Class B screeninglevelrequirementsandhasbeen in
production for three years. It is packaged in a 28 pin DIP with a glass sealand will be usedin an
airborne uninhabited cargo application.
tcp = (C1 XT + C2 XE + Awe) XL Section 5.2
C1 = .O034 5.2
Section
XT = 3.8 Section 5.8
C2 =: .O14 Section 5.9
5-20
. .
MIL-HDBK-217F
5.13 MICROCIRCUITS, EXAMPLES
ICE ' = 5.0 Section 5.1 O

"Q 2.0 Section 5.10
"L = 1.0 Section 5.10
hcyc = .38 Section 5.2:
= B2 = O for Flotox
Assume NO ECC, XECC = 1
Al ='.1 , 7K IC 5 15K Entry
B1 = 3.8 (Use Equation i at bottom of B1 and B2 Table)
Acvc A1B1(.1)(3.8) = .38
3p = [ (.0034)(3.8) + (.014)(5.0) + .38] (2.0)(1) = .93 Failures/106 Hours
Example 3: GaAs MMlC

Given: A MA4GM212 Single Pole Double Throw Switch, DC - 12 GHz, 4 transistors, 4 inductors, 8
= 30 dbrn, 16 pin hermetic flatpack, maximum TCH
resistors, maximum input PD = 145OC in a
ground benign environment. The part has been manufactured for 1 year and is screenedto
Paragraph 1.2.1 of MIL-STD-883, Class B equivalent screen.
% = [ C1n-p~+ C p E I X L ~ Q Section 5.4
c1 = 4.5 Section 5.4, MMlC Table, 4 Active Elements (See Footnote

to
Table)
XT = .O61 Section 5.8, TJ= TCH = 145°C
' "A = 3.0 Section 5.4, Unknown
Application
C2 S. .O047 Section 5.9
'FE = .50 Section 5.1 O
"L = 1.5 Section 5.1 O
KQ = 2.0 Section 5.10
%= [(4.5)(.061)(3.0) + (.0047)(.5)] (1.5)(2.0) = 2.5 Failures/106 Hours

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NOTE: The passive elements are assumed

to contribute negligiblyto the overall device failure
rate.
Example 4: Hybrid
Given: A linear multichip hybrid driverin a hermetically sealed Kovar package. The substrate is alumina
and there are two thick film dielectric layers. The die and substrate attach materials are
conductive epoxy and solder, respectively. The application environment is naval unsheltered,
65OC case temperature and the device has been in production for overtwo years. The device is
5-21
MIL-HDBK-217F
screened to MIL-STD-883, Method5808, in accordance with TableVIII, Class B requirements.

The hybrid contains the following components:
Active Components: 1 - LM106 BipolarComparator/BufferDie (13 Transistors)

1 - LM741ABipolarOperationalAmplifierDie (24 Transistors)
-
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2 Si NPN
Transistor
2 - Si PNP
Transistor
2 - Si General PurposeDiodes
Passive Components: 2 - Ceramic
Chip
Capacitors
17 . - Thick Film Resistors
1. Estimate Active Device Junction Temperatures

If limited informationis available on the specific hybrid materials and'construction characteristics
the default case-to-junction temperature rises shown in the introductionto Section 5.12 can be
used. When detailed information becomes available the following Section 5.12 procedure
should be used to determine the junction-to-case(eJC) thermal resistance and TJ values for
each component. .
(Equation 1)
Layer Figure 5-1 Feature
Silicon Chip A .O045

Conductive Epoxy B ' .O23
Two Dielectric Layers (2)(.0045) C = .o09
Alumina Substrate D ,039
Solder Substrate Attachment E .O023
Kovar Case F 948
.1258
A = Die Area = [ .O0278 (No, Die Active Wire Terminals) + .O4172 (Equation 2)
TJ = TC+~JCPD (Equation
3)

MIL-HDBK-217F
NOTICE 2
LM 106 LM741A Si NPN Si PNP Si Diode Source
No. of Pins 8 14 3 3 2 Vendor Spec. Sheet
Power Dissipation, .33 .35 .6 .6 .42 Circuit Analysis

(W)
Area of Chip (in.2) .O041 .O065 .O025 .O025 .o022 Equ. 2 Above
eJC rCw 30.8 19.4 50.3 50.3 56.3 Equ. 1 Above
TJ ("c) 75 72 95 95 89 Equ. 3 Above
2. CalculateFailureRatesforEachComponent:
A) LM1 06 Die,13 Transistors (from Vendor Spec. Sheet)
X T +%
c 2=X
[ cE1l X Q n L Section 5.1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Because C2 = O;
hp = C1 XTZQ XL XT: Section 5.8; X Q , XL Default to 1.O
= (.01)(3.8)(1)(1) = .O38Failures/106Hours
B) LM741 Die, 23 Transistors. Use Same Procedure as Above.
kp = Cl XTXQ XL = (.01)(3,1)(1)(1) = .O31 Failures/106 Hours
C) Silicon NPN Transistor, Rated Power = 5W (From Vendor Spec. Sheet),VCENCEO = .6,
Linear Application
hp = % P T ~ A X R ZSXQXE Section
6.3; XA, X Q , XE DefauR
to 1.O
= (.00074)(3.9)(1.0)(1.8)(.29)(1)(1)
= .O015 Failures/106 Hours
D) Silicon PNP Transistor, Same as C.
Xp = .O015Failures/106Hours
E) Silicon General Purpose Diode (Analog), Voltage Stress= 60%, Metallurgically Bonded
Construction.
hp = V T X S xc XQXE Section
6.1 : XQ, XE Default
to 1.O
= (.0038)(6.3)(.29)(1)(1)(1)
= .O069Failures/106Hours

VIL-HDBK-217F CHG N O T I C E 2 9997970 OL7704L 3T5
MIL-HDBK-217F
NOTICE 2
F) Ceramic Chip Capacitor, Voltage Stress = 50°/0,

TA = TCASE forthe Hybrid, 1340 pF, 125°C Rated Temp.
Ap = hbXCVRQ5CE Section 1O. 11; K Q , ICEDefault to 1.O

= (.0028)(1.4)(1)(1)
= .O039 Failures/106Hours
G) Thick Film Resistors, per instructionsin Section 5.5, the contribution of these devices is
considered insignificant relativeto the overall hybrid failure rate and they maybe ignored.
Section 5.10
Section 5.5
Section 5.10
Section 5.1 O
Ap = [ (1)(.038) + (1)(.031) + (2) (.0015) + (2)(.0015)

+ (2)(.0069) + (2)(.0039)](1 + .2(6.0)) (5.8)(1)(1)
hp = 1.2 Failures/l O6 Hours
5-24 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Supersedes page 5-24of Revision F
MIL-HDBK-217F
6. O DISCRETE SEMICONDUCTORS,
INTRODUCTION
The semiconductor transistor, diode and opto-electronic device sections present the failure rates on
the basisof device type and construction. An analytical modelof the failure rate is also presentedfor each
device category. The various types of discrete semiconductor devices require different failure rate
models that vary to some degree. The models apply to single devices unless otherwise noted. For
multiple devices ina single package the hybrid modelin Section 5.5 should be used.
The applicable MIL specification for transistors, and optoelectronic devices is MIL-S-19500. The
quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500.
The temperature factor (ET) is based on the device junction temperature. Junction temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction
to case thermal resistance. Determinationof junction temperatures is explainedin Section 6.14.
Reference 28 should be consulted for further detailed information on the models appearing in this
section.
6- 1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-237F C H G N O T I C E 2 H 9799970 0397043 37B
MIL-HDBK-217F
NOTICE 2
6.1 DIODES, LOW FREQUENCY
SPECIFICATION DESCRIPTION
MIL-S-19500 Low Frequency Diodes: General Purpose Analog, Switching,
Fast Recovery, Power Rectifier, Transient Suppressor, Current
Regulator, Voltage Regulator, Voltage Reference
h, = hbn Tn Sn Cn Qn E Failuredl O6 Hours
Base Failure Rate- Temperature Factor - 9

r Diode Type/Application I ‘b
(Voltage Regulator,Voltage Reference,
and CurrentRegulator)
General Purpose Analog .O038 1 =T TJ (“c)

Switching ,0010
Fast Recovery Power Rectifier .O25 1.o 105 3.9
Power Rectifier/Schottky .O030 30 1.1 110 4.2
Power Diode 35 1.2 115 4.5
Power Rectifierwith .O0501 40 1.4 120 4.8
High Voltage Stacks Junction 45 1.5 125 5.1
Transient SuppressorNaristor .O013 50 1.6 130 5.4
Current Regulator .O034 55 1.8 135 5.7
Voltage Regulator and Voltage ,0020 60 2.0 140 6.0
Reference (Avalanche 65 2.1 145 6.4
and Zener) 70 2.3 150 6.7
75 2.5 155 7.1
Temperature Factor - zT 80 2.7 160 7.5
85 3.0 165 7.9
(General Purpose Anak , Switching, Fast Recovery, 90 3.2 170 8.3
PC mient supe ssor) 95 3.4 175 8.7
TJ (“c) zT T J (“C) nT 1O0 3.7
25 1.o 105 9.0

30 1.2 110 10
35 1.4 115 11
40 1.6 120 12 -I = JunctionTemperature (“C)
45 1.9 125 14 J
50 2.2 130 15 L
55 2.6 135 16
60 3.0 140 18
65 3.4 145 20
70 3.9 150 21
75 4.4 155 23
ao 5.0 160 25
a5 5.7 165 28
90 6.4 170 30
95 7.2 1 75 32
1O0 8.0
= 3091 ( TJ
1
+ 273 -
1
E) )
TJ = JunctionTemperature (“C)

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

-
1
MIL-HDBK-217F RE 9 9 9 9 9 7 0 0070740 9
MIL-HDBK-217F
6.1 DIODES, LOW FREQUENCY
-
ElectricalStress Factor xs Quality Factor- x
r Stress
"
"S Quality "Q
Transient Suppressor, JANTXV 0.7
Voltage Regulator, Voltage
Reference, Current JANTX 1 .o
Regulator 1.o
JAN 2.4
All Others: Lower 5.5

V, 5 .30. 0.054
.3 e V, 5 .40 0.1 1 Plastic 8.0
.4 V, 5 .50 0.19
.5 e V, 5.60 O .29
.6 V, 5 .70 O .42
.7 v, 5 .ao 0.58 Environment Factor- zc 1
.8 c v, 5.90 0.77 .Environment

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
KE
.9<vs51.00 1.o
1 .o
L
6.0
For All Except Transient Suppressor, Voltage . 9.0
Regulator, Voltage Reference, or Current GM
Regulator NS 9.0
NU 19
zS = .O54 (V, I.3)
13
"s = v, 2.43 (.3¿ ..vss 1) AIC
AIF 29
Voltage Applied AUC 20
V, = Voltage Stress Ratio = '
Voltage Rated
.AUF- 43
Voltage is Diode Reverse Voltage ARW 24
SF .50
MF 14
Contact Consttuction Factor - v ML 32
I !
Contact Construction "C 320
CL
Metallurgically Bonded
Non-Metallurgically
Bonded
and1
Spring Loaded Contacts
i:
6-3
6.2 DIODES, HIGH FREQUENCY (MICROWAVE, RF)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
SPECIFICATION . DESCRIPTION
MIL-S-19500 Si IMPATT;Bulk Effect, Gunn; Tunnel, Back: Mixer, Detector,
PIN, Schottky: Varactor, Step Recovery
Failures/l O6 Hours
Base Failure Rate - Temperature Factor- ”T

Diode I (IMF 1
TJ (“c) T‘ TJ (“c) 7ct
Si IMPAlT (I 35 GHz) .22
Gunn/Bulk
Effect . .i8 25 . 1.o 105 42
Tunnel and Back (Including 30 1.3 110 50.
Mixers, Detectors) .O023 ’ 35 1.8 115 60
PIN .O081 40 2.3 ‘ 120 71
Schottky Barrier (Including 45 3.0 125 a4
Detectors) and Øoint Contact 50 3.9 130 99
(200 MHz s Frequency I 35 GHz) .O27 .55 5.0 135 120
Varactor and StepRecovery .O025 60 6.4 140 140
.65 8.1 145 160
70 10 150 . 1ao
75 13 155 21o
ao 16 160 250
Temperature Factor - zT a5 19 165 280
[All Types Ex pt I M P A T 90 24 170 . 320
-
95 29 1 75 370
TJ Cc) ’LT TJ (“c) 1O0 35
25 1.o 105 4.4

30 1.l 110 4.8 1
35 1.3 . 115 5.1
40 1.4 120 5.5 , ‘T e x p [ 5 2 6T0J( + ! 2 7 3 - K ) )
45 . 1.6 125 5.9
50 1.7 130 6.3 TJ = JunctionTemperature (“C)
55 1.9 135 6.7
60 2.1 140 7.1
65 2.3 145 7.6
70 2.5 150 8.0
75
80
2.8
3.0
155
160
8.5
9.0
Application Factor - ICA
__
85 3.3 165 9.5 Application
Diodes “A
90 3.5 1 70 10
95 3.8 1 75 11 Control
Voltage
Varactor, .50
- 1O0 4.1
1 1
Multiplier Varactor,
Diodes
All Other
2.5
1.o
T‘ 2100 ( TJ + 273
E))
TJ = JunctionTemperature (“C)
6-4
. .
’ . MIL-HDBK-217F RE M 9 9 9 9 9 7 0 0070742 2 M :
MI-HDBK-217F
6.2 DIODES, HIGH FREQUENCY (MICROWAVE, RF)
Power Rating Quality Factor “Q -

Rated Power, Pr (Watts) “R
(Schot r)
Quality’ W
PIN Diodes
Pr I 10 .50 JANTXV .50
10 < Pr I 100 1.3 JANTX 1.o
100 < Pr S 1000 2.0
JAN 1.a
1000 < Pr 9 3000 2.4
Lower 2.5
All Other Diodes 1.o Plastic -
PIN Diodes K R = .326 &Pr) - .25 For high frequency part classes not specified to
MIL-S-19500 equipment quality classes are
defined as devices meeting the same
All Other Diodes nR 5: 1 .O requirements as MIL-S-19500.
Environment Factor - -
Environment “E
(All Types Except Sch, ky)
Quality “Q GB 1.o
GF 2.0
JANTXV .50 .
GM 5.0
JANTX 1.o
NS 4.0
JAN 5.0 11
NU
Lower 25 AIC 4.0
Plastic 50 *IF 5.0
AUC ?.O
For high frequency patt classes not specified to AUF 12
MIL-S-19500 equipment quality classeq are
defined as devices meeting the same ARW 16
requirements as MIL-S-19500.
. .50
MF 9.0
ML 24
CL 250
Document provided by IHS.

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

6-5
. . .
NIL-HDBK-217F RE 9999970 0070743 4 ,

1 1
i
MIL-HDBK-217F
6.3 TRANSISTORS, LOW FREQUENCY, BIPOLAR
SPEClFlCATlON DESCRIPTION
MIL-S-19500 NPN (Frequency 200 MHz)
PNP (Frequency c 200 MHz)
Failures/lO6 Hours
Base Failure Rate -h Application Factor "A. . -

I Application I I
ci NPN ,00074 Amplification
Linear I.5
. Switching -70
Temperature Factor -I Power Rating Factor - KR

5ET T J PC) 7ET Rated Power (Pr, Watts) "R
"
25 1.o 105 4.5

30 I .1 110 4.8 Pr< .1 .43
35 1.3 115 5.2
40 1.4 120 5.6 Pr = .5 .77
45 1.6 125 5.9
50 1.7 130 6.3 Pr = 1.0 1.o
55 1.9 135 6.8
60 2.1 140 7.2 ' Pr= 5.0 1.8
65 2.3 145 7.7
70 2.5 150 . 8.1 Pr = 10.0 2.3
75 2.8 155 8.6
80 3.0 160 9.1
85 3.3 165 9.7 Pr = 50.0 . 4.3
90 3.6 1?O 10
95
1O0
3.9
4.2
1
175
1
- 11 Pr = 100.0
Pr 500.0 10
5.5
exp(-2114( TJ+273-=)) ZR = .43 Rated Power 5.1 W

TJ = JunctionTemperature ("C) ER (P,)*37 Rated Power> .1W
6-6 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F
6.3 TRANSISTORS, LOW FREQUENCY, BIPOLAR
Voltage Stress Factor ICS - Environment

Applied VCE/Rated VCEO Environment nE
*S
GB 1 .o
o < vs I .3 .li
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.3 <vs I .4 .16 GF 6.0

.4 c v, I .5 .21 GM 9.0
.5 V, I .6 . .29 9.0
NS
.6 V, 5 .7 .39
NU 19
.7 c V, I .8 .54
~
.
.8 c V, I .9 .73 AIC 13
'9 c v, s 1.0 1.o. 29
AIF
AUC. . 20 .
ns = ,045 exp (3.1(Vs)) (O V, I 1 .O) 43

AUF
v, = Applied
VCE / Rated VCEO ARW 24
SF 50
VCE = Voltage, Collector to Emitter
"F 14
VCEO = Voltage, Collector to Emitter, Base 32
ML
Open
CL 320
Quality Factor - XQ
, Quality
I i
I JANTXV
I .70 I

6.4 TRANSISTORS, LOW FREQUENCY, Si FET
MIL-S-19500 N-Channel and P-Channel Si FET (Frequency
5 400 MHz)
hp= hb7cT7tA7cQ7cE
Failuredl O6 Hours
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Base Failure Rate &,- - Application Factor ICA -

Application
Transistor Type I Rated
(Pr,
Output
Power) . "A
MQSFET .o1 2
AmplificationLinear 1.5
JFET .O045 (Pr W
Switching
SignalSmall -70
Temperature Factor -I Power F E T ~
f J ("C) TJ ?c)
(Non-linear, P, 2 2w)
ZT ZT
2.0
25 1.o 105 3.9
30 1.1 110 4.2
35 1.2 115 4.5 4.0
40 1.4 120 4.8
45 1.5 125 5.1 50 <.Pr C %OW , 0.0
50 1.6 130 5.4
55 1.a 135 5.7 10 Pr 2 250W
60 2.0 140 6.0
65 2.1 145 6.4
70 2.3 150 6.7
75 2.5 155 7.1 Environment Factor-
80 2.7 160 7.5
85 3.0 165 7.9 Environment 1 Xe
90 3.2 170 8.3
3.4 175 1 .o
-
95 8.7 GB
1O0 3.7
6.0
GF
' GM 9.0
1 1
*T (T~+273
(-lg2' -=)) NS
Nu 19
9.0
TJ = JunctionTemperature (OC) 13
AIC
AIF 29
-
Quality Factor 'CQ AUC 20
I Quality AUF 43
JANTXV ARW 24
JANTX SF .50
JAN
MF 14
ML 32
Lower
CL 320
Plastic
6-8
MIL-HDBK-2L7F RE W 9999970 0070746 T
MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
I . 6.5 TRANSISTORS, UNIJUNCTION
MIL-S-19500 Unijunction Transistors
h, = hbnTnQnEFailures/l O6 Hours
Base Failure Rate I+,- Quality Factor - XQ
Quality
JANTXV , .70
JANTX 1 .o
_ . JAN 2.4
Temperature Factor - Lower 5.5
T J ec) TJ (Oc)
Plastic 8.0
25 1.o 105
30 1.1 110
35 1.3 115 EnvironmentFactor - xE
I
.
40 1.5 120
45 1.7 125 7.5
8.1 I Environment "E
50 1,9 130 8.8 "
55 2.1 135 93 I.o
"I
60 2.4 140 10 6.0.
65 2.7 145 11
70 3.0 150 12 9.0
75 3.3 155 13 "
80 3.7 160 13 9..o

85 4.0- 165 14 19
90 4.4 170 15 "
95 4.9 175 16 13
1O0 5.3
. AIF 29
AUC 20
'T a *'P (- 2483 (TJ 273 Zä))

1
AUF 43
24
ARW "
TJ = JunctionTemperature ("C) .50
I . SF
MF 14
I - I ML
32
l CL - 320
6-9
MIL-HDBK-217F
6.6 TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-S-19500 Bipolar, Microwave RF Transistor
(Frequency > 200 MHz, Power 1W)
h, = h b ~ T ~ R ~Failures/l
S ~ Q ~O6EHours
Application Note: The model appliesto a single die (for multiple die use the hybrid model). The model does
apply to ganged transistors on a single die. ..
Power Rating Factor ICR
.. -
Base Failure Rate A,, Rated Power (Pr,Watts) - “R
Pr i .I .43
.I< Pr I .2 .55
.2 < Pr I.3 .64
.3 < Pr S .4 .71
.4 < Pr S -5 .77
Temperature Factor - nT .5 < Pr I.6 .83
.6 < Pr I.7 .88
TJ Fc) vc)
-
*T TJ *T .7 < Pr S .8 . .92
.8 < Pr I.9 .96
25 i.o 1o5 4.5
30 1.1 i10 4.8
35 1.3 115 5.2
40 1.4 120 5.6
r
45 1.6 125 ’ 5.9
50 1.7 130 6.3
55 i.9 135 6.8
60 2.1 140 7.2
65 2.3 145 7.7
70 2.5 8.1 Voltage
- Stress Factor - xS
1.50
75 .2.8 155 8.6 Applied VCE/Rated VCEO
ao 3.0 160 9.1 “S
as 3.3 165 9.7
90 3.6 170 10 o < v, I .3 .11
95 3.9 î 75 11 . .3 < v, 1 .4 .16
1 O0 4.2
.4 < v, I .5 .2 1
.5 V, .6 .29
1 1 .6 < V, S -7 .39
T
‘ a exp(-2114( T J + 2 7 3 . - E ) ) .7 c v, I .8 .54
.a c v, I .9 .73
TJ JunctionTemperature(“C)
.9 < v,
3
I 1.0 1.o
IC, = .O45 exp (3.1

(Vs)) (O V, 1 1.O)
V, = AppliedVCE / Rated VCEo
VcE = Voltage,Collector to Emitter
VcEo = Voltage,Collector to Emitter,Base

Open

MIL-HDBK-217F
6.6 TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR
Quality Factor - Environment Factor -

Quality “Q Environment
i “E
1 .o
JANTXV . .50
2.0
JANTX 1.o 5.0
JAN 2.0 4.0
Lower 5.0 11
4.0
NOTE: ‘For these devices, JANTXV quality class
must include IR Scan for die attach and screen for 5.0
barrier layer pinholes on gold metallized devices. 7.0
12
16
.50
. 9.0
24
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
250
6-1 1
MIL-HDBK-217F
6.7 TRANSISTORS, HIGH POWER, HIGH FREQUENCY, BIPOLAR
MIL-S-19500 Power, Microwave, RF Bipolar Transistors
(Average Power2 1W)
h, = hbzTzAz,,pQzEFailuresA O6 Hours
Base Failure Rate A+,- -

t Frequency
(GHz) 1.o 5.0 10 300 50200 100 400 500 600
,040
5 0.5 .O39 .O38 ,050 .O67 .12 1.1 .62
.20 .36
1 .O47 .O46 ,060 ,048 .42 .24
,080 .14 .74 1.3
2 .O67 .O65 ,086 .O69 .ll
.35 a20
3 .O95 .O93 .12 .O98 -16 .28 o
4 .14 .13 - ,14 .17 .23
+, = .O32
exp(.354(F) + .00558(P))
‘F = Frequency (GHz) P = Output
Power (W)
NOTE: Output power refersto the power level for the overall packaged device andtonot individual transistors within
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
is ganged together). The output power represents the power output from the
the package (if more than one transistor
cycle in pulsed applications. Duty cycle is accounted for when
active device and should not account for any duty
determining zk
- .
Temperature Factor - leT
.. Temperature Fadtor ICT -
(Gold Metállization) .
(Aluminum Metallization)
V, ( V C E ~ ~ C E S ) V, (VCEIBVCES)
TJ (“c) 5.40 .45 .50 .55 TJ (“C) 5.40 . -45 .50 .55
a l O0 .io .20 .30 .40 s11.1
O0 -.75 .38 1.5
110 .12 25 -37 .49 110 5 7 1.7 .1.1
2.3
120 .15 .30 .45 .59 20 1 ,84 1.7 2.5 3.3
130 .18 .36 .54 .71 130 1.2 2.4 3.6 4.8
140 .21 . .43 6.8 .645.1 .853.4 1.7 140
150 .25 .50 ’ .75
7.1 1.04.7 2.4 150 9.5
160 .29 .59 -88 1.2 9.7 160
6.5 3.3 13
170 .34 .68 18 1,O13 . 8.8
1.4 4.4 70 1
180 AO - .79 1.2 1.6 5.9 23
180 18 12
190 .45 i91 1.4 1.8 190
31 7.8
23 15
200 20 10 200 30 40
1 * &))I
ILT= .38exp( 5794 (TJ + 273

(Vs 5 .M)
1 1 1 1
I
I
XT
2 (VS -35)exp 2903
(.4 c v, 5.55)
- (- + 273 - K))s RT 7.55 (vs
-
(.4 < v,
exp
s 55)
(- + 273 - E)) I
i
VS = BVCES
VCE; VS = VCE~BVCES
VCE = Operating
Voltage
(Volts) VCE = Operating
Voltage
(Volts)
BVCES = Collector-Emitter
Breakdown BVCES = Collector-Emitter Breakdown
Voltage with Base Shorted to Voltage with Base Shorted to
Emitter (Volts) Emitter (Volts)
TJ I Peak
Junction
Temperature (OC) TJ = Peak
Junction
Temperature (“C)
6-12
4
MIL-HDBK-217F RE 7 9 9 9 7 7 0 0070750 L .
MIL-HDBK-217F
6.7 TRANSISTORS, HIGH POWER, HIGH FREQUENCY, BIPOLAR
Quality Factor - XQ
Application Factor ‘CA - Quality I
“Q
Application Duty Factor XA
cw NIA 7.6 JANTXV .so
Pulsed I 1% .46 JANTX 1 .o
5% .70
10% 1.o JAN 2.0
15% 1.3
20% 1.6 Lower 5.0
25% 1.9
XA .= 7.6,CW
2 30%
1 - 2.2
NOTE: For these devices, JANTXV quality class
must include IR Scan for die attach and screenfor
barrier layer pinholes on gold metallized devices.
ICA = .O6 (Duty Factor YO)+ .40 , Pulsed
Environment Factor - 7cc

Environment
Matching Network Factor - “M
Matching “M
Input and Output 1.o GM 5.0
Input 2.0
None 4.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`--- 6-13
6.8 TRANSISTORS, HIGH FREQUENCY, GaAs
FET
MIL-S-19500 G
a& Low Noise, Driver and PowerFETs (r 1GHz)
h, = hbnTnAnMnQnE
Failuredl O6 Hours
Base Failure Rate -L

Operating Average Output Power(Watts)
5 Frequency.1(GHz) e .1 . 1 2 4 6
1 .O52 " " 1 " " "
4 .O52 .O54
,084 ,066 .36 .14 .96
5 .O52 ,083 .1o .13 .21 .56 1.5
6 ,052 .13 .I6 .20 .32 .85 2.3
,' 3.5
7 .O52 .30 .20 .24 50 1*3
'8 ,052 .30 .37 .47 2.0 '.76 '
9 .O52 .46 ,72 .56 ' 1.2

10 ,052 1.1.71 .87 1.8
At., = ,052 . 1 $F$lO,

Pe.1
A+, = .O093exp(.429(F) + .486(P)) 4sFs10, .1 < P 1 6
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
F P Frequency (GHz) P I AverageOutputPower(Watts)
The average output power represents the power output from the active device and should not account for any duty
cycle in pulsed applications.
Temperature Factor - z- ,
Application Factor - ITA
..
Tc ("C) KT Tc ("c) ZT
I
Application (P I 6W) 1 ZA
1
25
30
1.o
1.3
105
110
24
28
All LowPowerandPulsed
I ' I
35
40
45
1.6
2.1
2.6
115
120 .
125
33
38
44
I cw I '
~~~~~
4
~ ~
I
50
55
60
65
3.2
4.0
4.9
5.9
í30
135
140
145
50
58
66
75
I P = Average Output Power (Watts)
1
70 7.2 150 85
75 8.7 155 97
80 10 160 110
85 12 165 120
90 15 170 140
-
95 18 175 150
1O0 21
I Channel
Tc Temperature ("C)

- ..
~ ~~
IIL-HDBK-217F NOTICE 3 RE 9999970 0076303 9
MIL-HDBK-217F
NOTICE 1
6.8 TRANSISTORS, HIGH FREQUENCY, GaAs FET
Matching Network Factor- Environment Factor

Matching I "M
Environment
GB 1 .o
Input and Output 1 .o
GF 2.0
-
Input Only 2.0 5,O
GM
None 4.0 NS 4.0
NU 11
AIC 4.0
- na
Quality Factor 5.0
T
AIF
Quality "Q 7.0
AUC
*UF 12
JANTXV .50
ARW 16
JANTX 1 .o
SF .50
JAN 2.0 9.0
MF
Lower 5.0 ML 24
CL 250
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
page

MIL-HDBK-217F
6.9 TRANSISTORS,
HIGH
FREQUENCY, SI FET
MIL-S-19500 Si FETs (Avg. Power c 300 mW, Freq. > 400 MHz)
h, = hb7CTXQ7CE Failures/l O6 Hours
Base Failure Rate - +-, Quality Factor- XQ

Transistor Type I i 1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Quality
MOSFET I JANTXV .50

JFET .O23 JANTX 1.o
JAN 2.0
Temperature Factor - IZT Lower 5.0

TJ vc) “T TJ (“c) XT
25 1.o 105 3.9

30 1.1 110 4.2 Environment Factor -
35 1.2 115 4.5
40 1.4 120 4.8
Environment “E
45 1.5 125 5.1
50 1.6 130 5.4 GB 1.o
55 1.8 135 5.7
60 2.0 140 6.0 GF 2.0
65 2.1 145 6.4
70 2.3 150 6.7 GM 5.0
75 2.5 155 7.1
80 2.7 160 7.5 NS 4.0
85 3.0 165 7.9
NU 11
--
90 3.2 170 8.3
95 3.4 175 8.7 4.0
1O0 3.7
AIF 5.0
%C 7.0
AUF 12
AFIW 16
SF .50
MF 9.0
ML 24
CL 250
6-1 6
Y
NIL-HDBK-217F RE W 9997770 0070754 9
MIL-HDBK-217F
6.1 O THYRISTORS AND SCRS
MIL-S-19500 Thyristors
SCRs, T r i m
h, = h b ~ T ~ R n SFailures/l
~ Q ~ EO6 Hours
Base Failure Rate - - Current Rating Factor - ZR. .

I
Type Device I Rated Forward Current
(
Ifrms (Amps))
1
I
All Types I
I
.o022 I
I .O5 .
“R.
,30
.1o . .40
.50 ,76
Temperature Factor -: . 1.0 1.o
5.0 1.9
TJ (“c) %T TJ (“c) 10 2.5
20 3.3
25 1.o 105 30 ’ L 3.9
30 1.i 110 40 4.4
. 35 1.4- 115 50 4.8
40 1.6 120 60 5.1
45‘ 1.9 125 70 5.5
50 2.2 130 80 5.8
55 2.6 135 90 . 6.0
60 3.0 140 1O0 6.3
65 3.4 145 110 6.6
70 3.9 150 120 6.8
75 4.4 155 130 7.0
80 5.0 160 140 7.2
85 5.7 165 150 7.4
90 6.4 170 160 7.6
95 7.2 175 170 7.8
1O0
- 8.0 175 7.9
= RMS RatedForwardCurrent(Amps)
’frms
TJ = JunctionTemperature(“C)
6-1 7
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

. . - ..
' MIL-HDBK-217F RE m 7 7 9 7 7 7 00 0 7 0 7 5 5 O m
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-HDBK-217F
6.1 O THYRISTORS AND SCRS
Voltage Stress Factor- ns Environment

V, (Blocking Voltage Applied/ Environment XE
Blodcing Voltage Rated)
- nS GB 1 .o
6.0
V, I; .30 .io GF
.3 < 1 .4 . us .la GM 9.0
.4 < Vs I; .5 .27 NS 9.0
.5 Vs S .6 .3a 19
NU
. .6 Vs I; .7 .51
13
.7 vS I.a .65 AIC
.a e vS s .9 .a2 AIF 29
,9 e Vs i 1.0 - ' 1 .o %C 20
-- AUF 43
ARW 24
(Vs < 0.3)
'
IrS'.10 .
SF .50
"s (V, 0.3) MF 14
ML 32
CL 320
Quality Factor - XQ
Quality "Cl
JANTXV 0.7
JANVX 1 .o
JAN 2.4
bower 5.5
Plastic 8.0

MIL-HDBK-217F RE W 9 9 9 9 7 7 0 O070756 2
MIL-HDBK-217F
6.1 1 OPTOELECTRONICS, DETECTORS,

ISOLATORS, EMITTERS
pto-isolators,
Photodetectors,
MIL-S-19500
h, = lLbzTxQxE Failures/l O6 Hours
Base Failure Rate - - Quality Factor- ZQ

Optoelectronic Type
- Quality 1 "Q
Photodetectors
Photo-Transistor ,0055
I JANTXV
I .70 I
Photo-Diode .o040
Opto-Isolators
Photodiode
Output,
Single
Device ' ,0025
Phototransistor Output, Single Device .O13
Photodarlington Output, Single Device ,013
Light Sensitive Resistor, Single Device .O064
Photodiode Output, Dual Device .O033
Phototransistor Output, Dual Device .O17
Environment Factor- xE
Photodarlington Output, Dual Device .dl 7
Environment "E.
Light Sensitive Resistor, Dual Device .o086
GB 1;o
Emitters
Infrared Light Emitting Diode (IRLD) .O013 GF 2.0
Light Emitting Diode (LED)
-
00023 GM 8.0
5.0
,
NS
- nT
I
Temperature Factor
NU 12
TJ ?c) zT
AIC 4.0
25 1.o 35 3.8 . AIF '6.0
30 1.2 80 . 4.3
35 1.4 85 4.8 AUC 6.0
40 1.6 90 5.3 8.0
45 1.8 95 5.9 AUF
50 2.1 1O0 6.6 ARW 17
55 2.4 105 7.3
60 2.7 110 . 8.0 SF .50 .
65 115 8.8
-
3.0 9.0
70 3.4 MF
ML 24
1 1 CL 450
+ 273 - E))
nT
TJ =
2790
JunctionTemperature ("C)
( TJ
6-1 9
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

- . MIL-HDBK-2L7F RE 9999970 0070757 I.I
!
MIL-HDBK-217F
6.12 OPTOELECTRONICS,
ALPHANUMERIC
DISPLAYS
MIL-S-19500 Alphanumeric Display
h, = hbnTnQnEFailures/l O6 Hours
Base Failure Rate X,, - Temperature Factor -:

Number
of
Characters
1
1 wRogicChip
Ib
Segment
Display
,00043
.O0047
I1 Ib
Diode Array
Display
.O0026
.O0030
TJ (“c)
25
30
35
%T
1.o
1.2
1.4
TJ
75
80
85
40 1.6 90
2 .O0086 .o0043 45 1.8 95
2 wLÖ& Chip ,00090 ,00047
3 ,0013 . .O0060
50 2.1 1O0 6.6
3 w/LÖgic Chip * .O013 .O0064 55 - 2.4 105
4 .O017 .o0077 60 2.7 . 110 ‘ 8.0
4 wkogic Chip .o018 .O0081 65 3.0 115 8.8
5 .o022 ,00094 70 3.4
6 ,0026 .o01 1
7 .O030 .Oß13 1
8 ,0034 ,0015 *T
9 .O039 .O016 298
10 .o043 .OP1 8
,’ (-
P 2790 (TJ + 273
11 .O047 ,0020
12
13
14
.O052
,0056
.O060
,0021
.O023
,0025
I TJ = .Junction Temperature(“C)
1
15 .O065 .O026
Environment Factor “E -
A+, =.00043(C) + +, for Segment Displays Environment “E
A+, = .O0009 + .00017(C) + Ao
, DMe Array Displays GB 1 .o
C a Number of Characters =F 2.0
Ac,. P
,000043 for Displays with a
Logic Chip GM 8.0
= 0.0 for Displays without Logic Chip NS 5.0
NOTE: The number of characters in a display is the NU 12
in a && sealed
number of characters contained
padtage. For example, a 4 character display AIC 4.0
comprising 4 separately packaged single characters
6.0 character displays,
mounted together wouldbe 4-0119 AIF
not 1-four character display.
AUC . 6.0 .
AUF 8.0
Quality Factor ’FQ -
ARW 17
I Quality I “A
JANTXV SF 50
0.7
JANTX 1.o MF 9.0
JAN 2.4 ML 24
Lower 5.5 CL 450
Plastic 8.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

.' MIL-HDBK-217F RE = 9999978 8[378758 b
MIL-HDBK-217F
6.13 OPTOELECTRONICS, LASER DIODE í
MIL-S-19500 Laser Diodes with Optical Flux Densities
3 MW/cm2 and Forward Current< 25 amps
L, = hbRTAQnlXARp7cE Failuredl O6 Hours
Base Failure Rate - +, Forward Current Factor,1

Laser Diode Type Forward Peak Current (Amps) "I
.O50 0.13
GaAdAI GaAs .O75 0.1 7
.1 0.21
In GaAYlnGaAsP .5 0.62
. 1.0 1.o
2.0 1.6
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
3.0 2.1
Temperature Factor - nT 4.0
5.0
2.6
3.0 .
%T 10 4.8
15 6.3
25 1.o 20 7.7
30 1.3 25 8.9
35 1.7
40 2.1 Tc1 = (ï)a68
45 2.7
50 3.3 - I = Forward Peak Current(Amps), I I 2 5
55 4.1
60 5.1 NOTE: For Variable Current Sources, use the Initial
65 6.3 Current Value.
70 7.7
75 9.3
Application Factor X .A.
Application Duty Cycle *A
1 """""- 4.4
T
' exp(- 4635 (TJ +!273 - g )) Pulsed . .I
.2
.32
.45
TJ = JunctionTemperature("C) . .3 .55 -
.4 .63.
.5 .71
.6 .77
.7 .a4
Quality Factor- XQ .8 .89
.9 - ,95
I Quality I nn I 1.o J 1.00
Hermetic Package 1.o XA = 4.4, cw

Nonherrnetic with Facet Coating 1.o "A = Duty Cycle Pulsed
NOTE: A duty cycleof one in pulsed application
Nonhermetic without Facet Coating 3.3 represents the maximum amountit can be driven in
a pulsed mode. This is different from continuous
wave application whichwill not withstand pulsed
operating levelson a cöntinuous basis.

~.
MIL-HDBK-ZE7F R E 9999970 0670759 B W
MIL-HDBK-217F
6.13 OPTOELECTRONICS, LASER DIODE
Power Degradation
- Factor - ICE, Environment
Ratio P P s Environment
nP
0.00 .so GB
.O5 .53 6, 2.0
.I o .56
.15 ,549 GM 8.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.20 .63
.25 .67 NS 5,O
.30 .71 12
.35 .77 NU
AO .83 4.0
o .4S .91 AIC
.50 1.o 6.0
.55 1.1 AIF
.60. ., 1.3 AUC 6.0
.65 1.4
.70 1.7 AUF 8.0
.75 2.0
.ao 2.5 ARW 17
.85 3.3 .50
-
.90 5.0 SF '
.95 10 9.0
MF.
ML 24
CL 450
PS Rated
Optical
Power
Output (mw)
Pr = RequiredOpticalPowerOutput (mw)
NOTE: Each laser diode must be replaced when
power outputfalls to Pr for failure rate prediction to
be valid.

- ~
MIL-HDBK-217F RE m 9 9 9 9 9 7 6 0870760 4 m
MIL-HDBK-217F
6.1 4 DISCRETESEMICONDUCTORS,TJDETERMINATION
-
Ideally, device case temperatures should be determined from a detailed thermal analysis of the
equipment. Device junction temperatureis then calculated with the following relationship:
TJ = T c + OXP
where:
TJ = Junction
Temperature
(“C)
TC- = Case Temperature (“C). If no thermal analysis exists, the default case
temperatures shownin Table 6-1 should be assumed.
eJC = Junction-to-Case Thermal Resistance (“Cm. Thisparametershouldbe
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
6-2, whichever is
determined from vendor, military specification sheets or Table
of the recommended
greater. It may alsobe estimated by taking the reciprocal
derating level. For example, a device derating recommendation of.16 W/”C would
result in a OJC of 6.25 OCM. If eJC cannot be determined assumea eJC value of
70”CM.
. P = DeviceWorse Case PowerDissipation (W)
The ‘models are not applicable to devices at overstress conditions. If the calculated junction temperature
is greater than the maximum rated junction temperature on the MIL slash sheets or the vendor’s
specifications, whichever is smaller, then the device is overstressed and these models ARE NOT
APPLICABLE.
Table 6-1: Default Case Temperat-ures (TC) for All Environments
. Environment TC (“c)
GB 35
GF 45
GM 50
NS 45
NU 50
AIC 60
AlF 60
AUC . 75
AUF 75
ARW 60
SF 35
MF 50
ML 60
CL 45
6-23
MIL-HDBK-ZL7F RE m 9 9 9 9 9 7 00 8 7 8 7 b l b m
MIL-HDBK-217F
6.1 4 DISCRETESEMICONDUCTORS,TJDETERMINATION
Table 6-2: Approximate Junction-to-CaseThermalResistance (eJ c ) for Semiconductor t

1
Devicesin VariousPackageSizes* . c
Type
Package eJC eJC Type
Package
TO-1 ?O TO-205AD - 70
TO-3 10 TO-205AF 70
TO-5 70 T01220 5
TO-8 70 DO-4 5
TO-9 70 DO-5 5
TO-1 2 70 DO-7 -. 1o
TO-18 70 DO-8 5
TO-28 5 DO-9 5
TO-33 70 DO-13 . 10
'
TO-39 70 DO-14 5
TO-41 10 DO-29 10
TQ-44 70 DO-35 10
TO-46 70 DO-41 10
TO-52 70 DO-45 5
TO-53 5 DO-204MB 70
TO-57- 5 DO-205AB 5
TO-59 5 ' PA-42A,B 70
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
TO-60 5 PD-36C 70
TO-61 5 PD-50 70
TO-63 5 PD-77 70
TO-66 10 PD-180 70
TO-71 70 PD-319 . 70
TO-72 70 PD-262 70
TO-83 5 PD-975 70
. TO-89 22 PD-280 70
TO-92 70 PD-21 6 70 '
TO-94 5 PT-2G 70
TO-99 70 PT-GB . 70
TO-1 26- 5 PH-1 3 70
TO-127 5 PH-1 6 70
TO-204 10 PH-56 70
TO-204AA 10 PY-58 70
PY-373 90
'When available, estimates must be based miliary

on specification sheetor vendor values, whichever8Jc
s higher.

. ... .
MIL-HDBK-217F RE m 9979970 00707b2 8 m
MIL-HDBK-217F
6.1 5 DISCRETESEMICONDUCTORS,EXAMPLE
I -
Example
Given: Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25%, one side
only, and 0.35 W at 25"C, both sides, with Tmax = 2OO0C, operating in linear service at
55°C case temperature in a sheltered naval environment. Side one, NPN, operating at
0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30
percent of rated voltage. The device operates at less than 200MHz.
Since the device is a bipolar dual transistor operating at low frequency (c200 MHz), it falls into the
Transistor, Low Frequency, Bipolar Group and the appropriate model is given in Section 6.3. Since the
device is a dual device, it is necessary to compute the failure rateof each side separately andsum them
together. Also, since 0JJc is unknown, eJC = 70°C/W will be assumed.
Based on the given information, the following model factors are determined from the appropriate tables
shown In Section 6.3.
xb 3 ,00074 -
"T1 = 2.2 Side 1, TJ =TC + 0Jc P = 55 + 70(.1) = 62°C

"T2 = 2.1 Side 2, TJ = 55 + 70(.05) = 59°C
"A = 1.5
XR = .68 Using
equation
shown
with nR table, P, = .35W
"st = .21 Side 1,50% Voltage
Stress
"s2 = .Il Side 2,30% Voltage Stress.
ZQ = 2.4
"E = 9
SIDE 1 SIDE 2-
hp = % "T1 "A "R "SI ".Q XE -b % "T2 "A ".S2"Q "E
hp = (.00074)(2.2)(1.5)(.68)(.21)(2.4)(9+)(.00074)(2.1)(1s)(.68)(.11)(2.4)(9)
= .O1 1 Failures/lO6 Hours
6-25
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F NOTICE L RE = 9999970 0076L0.5 2 W
MIL-HDBK-217F
7.1 TUBES, ALL TYPES EXCEPT TWT AND MAGNETRON
DESCRIPTION
All Types Except Traveling Wave Tubes and Magnetrons.
Includes Receivers, CRT, Thyratron, Crossed Field Amplifier,
Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed
Klystron, CW Klystron
+,= hbxLzE Failures/106 Hours

Base Failure Rate -
(Includes Both Randorn and Wearout Failures)
Type Tube I Tube Type
Receiver Klystron, Low Power,
Tetrode,
Pentode
Triode, 5 .O (e.9. Local Oscillator) YU
ectifier Power 10
CRT 9.6 Klystron, Continuous Wave4
Thyratron 50 3K3000LQ 9.0
Crossed Field Amplifier 3K50000LF 54
QK681 260 3K21OOOOLQ 150
SFD261 150 3KM300LA 64
Pulsed Gridded 3KM3000LA 19
3KM50000PA 110
I 2041
6952
7835 140
I
140
390
- "
3KM50000PA1
3KM50000PA2
120
150
Transmitting 4K3CC 61 O
Triode,
Peak Pwr. I 2 0 0 KW.
Pwr. 2 2KW, Freq. I 200 MHz
Ava. 75 4K3SK
4K50000LQ
29
30
Tetrode & Pentode, Peak Pwr. 1O0 4KM50LB 28
I200 KW, Avg. Powers 2KW, 4KM50LC 15
Freq. I 200 KW 4KM50SJ 38
4KM50SK 37
Vidicon 4KM3000LR 140
Antimony Trisulfide(Sb&) 4KM50000LQ 79
4KM50000LR 57
Photoconductive Material 4KM170000LA
' 15
Silicon Diode Array Photoconductive
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
8824 130
Material I 48 8825 120
Twystron 8826 280
I VA 1 44
VA145E
VA145H
I
850
450
490
VA800 E
VA853
VA8568
70
220
65
VA91 3A 230 VA888E 230
Klystron, Pulsed*
~KMP~OOOOLF 43
8568 230 Ifthe CW Klystron of interest is not listedabove,
L3035 66 use the AlternateCW Klystron ly, Table on the
L3250 69 following page.
L3403 93
SAC42A 1O0
VA842 18
2501OA 150
ZM3038A 190
If the pulsed Klystronof interest is not listedabove,
use the Alternate Pulsed Klystron hb Table on
the following page.
7- 1

MIL-HDBK-217F NOTICE L RE I 9 9 7 9 7 7 0 0 0 7 6 3 0 6 Y
MIL-HDBK-217F
NOTICE 1
7.1 TUBES,
ALLTYPES
EXCEPT
TWT
AND
MAGNETRON
Altern; :e* Base Failure Rate for Pulsed Klystrons - A Learning Factor - nL
Po .2 .4 .6 .8
F(GHz)
1.0 2.0 4.0 6.0 I T (years) 1
.o 1 16 16 16 16 16
16 16 16 10
-30 16 16 17 17 17 20 18 21
.80 16 17 17 18 18 25 21 30
1,o 17 17 18 18 19 2822 34
3.0 18 20 21 23 25 34 51
5.0 19 22 25 28 31 45 75
8.0 21 25 30 35 40 63 110
10 22 28 34 40 45 75
25 31 45 60 75 90 160 XL = 10(T)-2.1,
1 ITS3
= 10, T <1
hb = 2.94(F)(P) + 16 = 1,T23
F = OperatingFrequency in GHz, 0.2 5 F I 6 I T = Number of Years sinceIntroduction

P = PeakOutputPowerin MW, .O1 IP s 25 and I to Field Use
P I490 F-2*95
'See previous page for other Klystron Base Failure Environment Factor - xE
Rates.
Environment "E
GB .50
1 .o
Alternate* Base Failure Rate for CW Klystrons - +, GF
14
F(MHz) GM
300 500 800 10002000 4000 6000 8000 8 .O
NS
o. 1 30 31 33 34 30 47 57 66 NU 24
1.o 31 32 33 34 39 48 57 66
3.0 32 33 34 35 40 58
49 AIC 5 .O
5.0 33 34 35 36 41 50
8.0 34
35
37
30 42 AIF 8.0
10 35 36
30
39 43 6 .O
30 45
46 48 49 AUC
50 55 56 58 59 12
80 70 71 73 *UF
1O0 80 01 40
ARW
-20
+,= 0.5P + .0046F + 29 SF
22
MF
P = Average Output Power in KW, 0.1 IP 4 100
ML 57
and P s 8.0(1O)6(F)-1*7
F = Operating
Frequencyin MHz, CL 1O00
300SF18000
'See previous pagefor other Klystron Base Failure

Rates.

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

M I L - H D B K - 2 1 7 FC H GN O T I C E 2 777q770 L711%?044 004
MIL-HDBK-217F
NOTICE 2
7.2 TUBES, TRAVELING WAVE
DESCRIPTION
Traveling Wave Tubes
h, = hbzE Failures/106 Hours
Base Failure Rate - Environment Factor- nc

L
4 2(W)1 .1
1410 8 6Power
Frequency (GHz)
18
Environment
I "E
GB .5
10 11 12 13 16 19 24 29 42 61
1O0 11 12 13 16 20 24 29 42 61 GF 1.5
500 11 12 13 16 20 24 29 42 61 7.0
1O00 11 12 13 16 20 24 29 42 62 GM
3000 11 12 14 17 20 24 29 43 63 3.0
5000 12 13 14 17 20 25 30 44 64 NS
8000 12 13 14 17 21 26 31 45 66 10
1O000 12 13 15 18 22 26 32 46 68 NU
15000 13 14 15 19 23 27 33 49 71 5.0
AIC
-
20000 14 15 16 20 24 29 35 51 75
30000 15 16 18 22 26 32 39 56 83 AIF 7.0
40000 17 18 20 24 29 35 43 62 91
AUC 6.0
h" ll(l.ooool)p (1.1)F

AUF 9.0
P 5 Rated Power in Watts (Peak, if Pulsed), ARW 20
.O01 I P I40,OOO .O5
SF
F a Operating Frequencyin GHz, .1 5 F < 18 11
MF
If the operating frequencyis a band, ortwo different ML 33
values, use the geometric mean ofthe end point
frequencies when using table. CI 500

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F
7.3 TUBES,
MAGNETRON
DESCRIPTION
Magnetrons, Pulsed and Continuous Wave (CW)
h, = hbxUxCxEFailures/106 Hours
Base Failure Rate-

r I Frequency (GHz) 1
P(MW) .1 .5 1 30 5 20 10 . 40 . .50 60 70 80 90 100
7 41 24 .o1 7.6 4.6 1.4
10 6.3 1.9 30028026056
.O5 230210
34 180150120 93
110 64 39 .112 7.2 2.2
130 80 48 .3 15 9.0 2.8
17 10 3.1410 370 330 290 240 200
.5 54150 89 440 480
0230170100 621 19 11 3.5 O 550
3 4.4
6806302458014
530470410350280
77 210130
5 4.9 26 16 31 230140
85 580
O520460390 640 760700
I
I
Pulsed
Magnetrons:
hb = I~(F)*'~
(P)-2o
CW Magnetrons
(Rated
Power
%=I8
5 KW):
1
F = Operating Frequency in GHz, .15 F s 100
Utillization Factor- xu Environment Factor- nE

Utilization (Radiate Hours/
Hours)
Filament I RI I 1 Environment
GB
"E
1.o
o .o .44
2.0
0.1 .50 GF
o .2 .55
GM 4.0
0.3 .61
O-4 .66 NS 15
O .5 .72
0.6 .78 NU 47
O .7 .83 10
0.8 .89 AIC
o .9 .94 AIF 16
%C 12
RU = 0.44 + 0.56R AUF 23
ARW 80
R = RadiateHours/FilamentHours
SF .50
Construction Factor- "C MF 43

a
Construction ML 133
"C
CL 2000
CW (Rated Powerc 5 KW) 1.o
Coaxial Pulsed 1.o
Conventional Pulsed 5.4
7-4 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
i
!
.* .
MIL-HDBK-217F RE 9 9 9 9 9 7 0 00707b7 7 - ,
MIL-HDBK-217F
8 .O LASERS, INTRODUCTION
The models and failure rates presentedin this section apply to Jaserpeculia-, ¡.e., those items
wherein the lasing action is generated and controlled. In addition to laser peculiar items, there are other
assemblies used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses,
etc.). The failure ratesfor these parts should be determined with the same procedures as used for other
electronic and mechanical devices in the equipment or system of which the laser is a part.
The laser failure rate models have been developed at the "functional," rather than "piece part" level
because the available data were not sufficient for "piece part" model development. Nevertheless, the
laser functional models are included in this Handbook in the interest of completeness. These laser
models will be revisedto include piece part models and other laser types when the data become available.
Because each laser familycan be designed using a variety of approaches, the failure rate modelshave
but may differ in
been structuredon three basic laser functions which are common to most laser families,
the hardware implementationof a givenfunction. These functions are the lasing media, the laser pumping
mechanism (or pump), and the coupling method.
Examples of media-related hardware and reliability influencing factors are the solid state rod, gas, gas
pressure,vacuumintegrity,gasmix,outgassing,andtubediameter.The electrical discharge,the
flashlamp, and energy level are examples of pump-related hardware and reliability influencing factors. The
"Q" switch, mirrors, windows, crystals, substrates,
coupling function reliability influencing factors are the
coatings, and levelof dust protection provided,
Some of the laser models require the number otactive optical surfaces as an input parameter.An active
optical surfaceis one with which the laser energy (or beam) interacts. Internally reflecting surfaces are not
cwnted. Figure 8-1 below illustrates examples of active optical surfaces and count. .
Flgure 8-1: Examples of Active OpticalSurfaces
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
8- 1
..
. M I L = H D B K = 2 L 7 F RE m 9999970 0070768 9 m
MIL-HDBK-21I F
8.1 LASERS, HELIUM AND

ARGON
DESCRIPTION
‘Helium Neon Lasers
Helium Cadmium Lasers
Argon Lasers
hp = XMEDIA‘CE + ~ O U P L I N G ~Failures/l
E O6 Hours
-
Lasing Media Failure RateAMEDIA Environment
Environment
Type . I AMEDIA “E
=B .30
=F 1 .o
GM. 4.0
NS 3.0
NU 4.0
AIC 4.0
AIF 6.0
Coupling FailureRate - b u P L I N G AUC ?,O

AUF 9.0
ARW 5.0
Helium
SF .1 o
Argon
I 6
MF 3.0
8.0
’
ML
NOTE: The predominant argon laser failure NIA
CL
(as
mechanism is related to the gas media
reflected in AMEDIA; however, when the
tube is refilled periodically (preventive
maintenance) the mirrors (as part of
~ O U P L I N G )can be expectedto deteriorate
after approximately104 hours of operationif
in contactwith the discharge region.
~ O U ~ L I NisG negligible for helium lasers.
8-2 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-ZL7F RE 99999700070769 O
II
MIL-HDBK-217F
8.2 LASERS,, CARBON DIOXIDE, SEALED
DESCRIPTION
CO2 Sealed ContinuousWave Lasers
h ~ =n;onBhnE +~10 nOsnE

~ ~Failures/106
~ ~ Hours
Lasing Media Failure Rateh,,,,, - ... .. .
Optical Surface Factor- "0s
I "OS
1
"
Active
Optical
Surfaces
Tube Current (mA) I AMEDIA
10 240 1 1.
20 930
30 1620 2 2
40 2310 .
50 0 3000
1 O0 6450 nos = Number of Active Optical Surfaces
150 . .9900
NOTE: Only active optical surfaces are
AMEDIA -
= 69(l) 4 0 counted. An active optical surface is one with
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
which the laser energy or beam interacts.
I = Tube Current (mA), 1O s I 5 150 Internally reflecting surfaces are not counted.
See Figure 8-1 for examples on determining the
number of optical surfaces.
Gas Overfill Factor= "0
CO2 Overfill Percent (%) I "O
I Environment Factor- zC
O * 1.0 Environment
25 .75 GB
GF
GM
no = 1 - .O1 ("hOverfill)
. NS
Overfill percentis based onthe percent increase NU
over the optimumCO2 partial pressure which is
normally in the rangeof 1.5 to 3 Torr (1 Torr = 1 AIC
m m Hg Pressure) for most sealedC02 lasers. AIF
AUC
i
Ballast Factor - XB AUF
Percent of Ballast ARW
Volumetric Increase "6
. SF
O 1 .o MF
50 .58
1 O0 .33 ML
150 .19 C, . 8.0
NIA
8-3
MIL-HDBK-217F RE 999997[3 0070770 7
MIL-HDBK-217F
8.3 LASERS, CARBON DIOXIDE, FLOWING

: x
DESCRIPTION
CO2 Flowing Lasers
hp = ~ C O U P L I N G ~ OII:ES Failures/lO6 Hours

Coupling Failure Rate- XWUPLING Environment Factor xc - L
Environment
UPL LING “E
GB -30
GF . 1 .o
1.o 300 4.0
GM
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NS 3.0
NU 4.0
P = Average Power CSutputin M,.O1 S P I l .D ’
AIC 4.0
Beyond the1KW range other glass failure mechanisms
AIF 6.0
begin to predominate and alter theXCOU~L~NG values.
CO2 flowing laser optical
It should also be noted that AUC 7.0
devices are the primary source of failure occurrence. AUF . 9.0
A tailored optical cleaning preventive maintenance 5.0
ARW
program on optic devices greatly extends laser life.
SF .1o
MF 3.0
ML 8.0
Optical Surface Factor %OS - NIA
CL
Active Optical Surfaces Inos
1 1
2 2
nos = Number of Active Optical Surfaces
NOTE: Only active optical surfaces are counted.

with which the laser
An active optical surface is one
energy or beam interacts. Internally reflecting
surfaces are not counted. See Figure 8-1 for
examples on determining the number of optical
surfaces.
8-4
~ ~ ~~~~~~
MIL-HDBK-237F RE m 9 9 9 9 9 7 00 0 7 0 7 7 3 9 m
MIL-HDBK-217F
8.4 LASERS, SOLID STATE, ND:YAG

AND RUBY ROD
DESCRIPTION
Neodymium-Yttrium-Aluminum-Gamet (ND:YAG) Rod Lasers
Ruby Rod Lasers
X, PUMP ~ E D I A+ 16.3 z
( + ~ znE~Failures/l
~ ) O6 Hours
Pump Pulse Failure Rate - h p u ~ p Pump Pulse Failure Rate h p " ~ p -
(Xenon Flashlamps)
The
empirical
formula
used to determine ' The empirical
formula
used
to
determine
for
(Failures/l06 Hours) for Xenon lamps is: Krypton lamp is:
u+
~,P is the failure rate contributionof the krypton
flashlamp or flashtube. The flashlamps
evaluted herein are the continuous wave (CW)
l c p ~ ~ispthe failure rate contributionof the Xenon type and are most widely used for commercial
flashlamp or flashtube. The flashlamps solid state applications. They are approx-
evaluated herein are linear types used for imately 7mm in diameter and5 to 6 inches long,
military solid state laser systems. Typical
default model parameters are given below. P is theaverageinputpowerinkilowatts.Default
value: P = 4.
PPS is therepetitionpulserate in pulsesper
* second. Typicalvaluesrangebetween1and L is the flashlamporflashtubearclengthin
20 pulses per second. inches. Default value: L = 2.
Ej is the flashlamp or flashtubeinputenergyper zmL isthecoolingfactordue to variouscooling '
pulse, in joules. Its value is determined from media immediately surrounding the flashlamp
the actual or design Input energy. For values
less than30 joules, use Ej = 30. Default or flashtube. z c m ~ = 1 for any air or inert gas
value: E 40. . cooling, zmt = .1 .for all liquid designs.
i'
Default value: zCmL = .1, liquid cooled.
distheflashlamporflashtubeinsidediameter,
in millimeters. Default value: d = 4.
L is ttie flashlaniporflashtubearclength in Media Failure Räte - AMEDIA
inches. Defautt value: L = 2. Laser Type. . &MEDIA
t is the
truncated
pulse
width in microseconds.
Use t= 1O0 microseconds for any truncated ND:YAG O
pulse width exceeding 100 microseconds. FOI
shorter duration pulses, pulse width
measured at1O percent of the maximum
is to be Ruby I (3600) (PPS) [43.5 F2*52]
current amplitude. Default value: t I 100.
1 PPS - isthenumberofpulses persecond
I
WOOL is the cooling factor due to various cooling
media immediately surrounding the flashlamp
F - is the energydensity in Joulesper
cm.2/pulse over the cross-sectionalarea
or flashtube. zCwL I1.O for any air or inert of the laser beam, whichis nominally
gas cooling. z c m ~ .1 for all liquid cooled equivalent to the cross-sectional area of
the laser rod, andits value is determined
designs. Default value: nCmL = .1 , liquid from the actual design parameter of the
cooled. laser rod utilized.
I NOTE: hEDlA is negligible for ND:YAG lasers.

I
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
8-5
MIL-HDBK-2L7F RE E 9 9 9 9 9 7 00 8 7 0 7 7 2 O E
MIL-HDBK-217F
8.4 LASERS, SOLID STATE,

ND:YAG
AND
RUBY
ROD
Environment Factor xE -
nc Environment "E
Rigorous cleanliness procedures 1 'GB .30

and trained maintenance
personnel. Belbws providedovw GF 1 .o
optical train, .%A 4.0
Minimal procau&r duhg oponing, 30 NS 3.0
maintenaco, r o p a u . urd tosting.
Bdbm pt0vid.d ovor opticaltnin. NU 4.0
Minimalpr.cuttionr during op.ning,
maintenance, ropair, md tuting. No
80 *IC 4.0
belbm providd v o r opticrl tmin. +F . 6.0
AUC 7.0
9.0
ARW 5.0
SF .1o
MF 3.0
ML 8.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
CL NIA
I
1 1
2 2

MIL-HDBK-217F CHG NOTICE 2 9999770 0397046 987
MIL-HDBK-217F
NOTICE 2
9.1 RESISTORS
'P = 'bzTRP S QR E Failures/106 Hours

X X:
XT Table ns Table
Resistor Style ;pecification Description
MIL-R- % Use Use
Column: Column:
RC 11 Resistor, Fixed, Composition (Insulated) .o017 1 2
RCR 39008 Resistor, Fixed, Composition (Insulated) Est. Rel. .o017 1 2
RL 22684 Resistor, Fixed, Film, Insulated .O037 2 1
RLR 39017 Resistor, Fixed, Film (Insulated), Est. Rel. .O037 2 1
RN (R, C or N) 551 82 Resistor, Fixed, Film, Established Reliability .O037 2 1
RM 55342 Resistor, Fixed, Film, Chip, Established Reliability .O037 2 1
RN 10509 Resistor, Fixed Film (High Stability) .O037 2 1
RD 11804 Resistor, Fixed, Film (Power Type) .O037 NIA, =1 1
RZ 8340 1 Resistor Networks, Fixed, Film .o01 9 1 VIA, X s = 1
RB 93 Resistor, Fixed, Wirewound (Accurate) .O024 2 1

RB R 39005 Resistor, Fixed, Wirewound (Accurate) Est. Rel. .O024 2 1
RW 26 Resistor, Fixed, Wirewound (Power Type) .O024 2 2
RWR 39007 Resistor, Fixed, Wirewound (Power Type) Est.Rel. .O024 2 2
RE 18546 Resistor, Fixed, Wirewound (Power Type, Chassis .O024 2 2
Mounted)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
RE R 39009 Resistor, Fixed, Wirewound (Power Type, Chassis .O024 2 2

Mounted) Est. Rel.
RTH 23648 Thermistor, (Thermally Sensitive Resistor), .o019 NIA, XT = 1 NIA, XS = 1
Insulated
RT 27208 Resistor, Variable, Wirewound (Lead Screw .O024 2 1
Activated)
RTR 39015 Resistor, Variable, Wirewound (Lead Screw .O024 2 1
Activated), Established Reliability
RR 1 2934 Resistor, Variable, Wirewound, Precision ,0024 2 1
RA 19 Resistor, Variable, Wirewound (Low Operating .O024 1 1
Temperature)
RK 39002 Resistor, Variable, Wirewound, Semi-Precision .O024 1 1
RP 22 Resistor, Wirewound, Power Type .O024 2 1
RJ 22097 Resistor, Variable, Nonwirewound .O037 2 1
RJ R 39035 Resistor, Variable, Nonwirewound Est. Rel. .O037 2 1
RV 94 Resistor, Variable, Composition .O037 2 1
RQ 39023 Resistor, Variable, Nonwirewound, Precision .O037 1 1
RV C 23285 Resistor, Variable, Nonwirewound .O037 1 1
Supersedes Section 9.0 - 9.17 of Revision F 9-1

flIL-HDBK-ZL7F CHG N O T I C E 2 9 9 9 9 9 7 0 0197047 813
MIL-HDBK-217F
NOTICE 2
9.1 RESISTORS
Temperature Factor - XT Power Factor- XP

TW) Column 1 Column 2 Power Dissipation (Watts) "P
20 .88 .95 .o01 .o68
30 1.1 1.1 .o1 .i7
40 1.5 1.2 .13 .44
50 1.8 1.3 .25 .5a
60 2.3 1.4 .50 .76
70 2.8 1.5 .75 .89
ao 3.4 1.6 1.o 1.o
90 4.O 1.7 2.0 1.3
1 O0 4.8 1.9 3.0 1.5
110 5.6 2.0 4.0 1.7
120 6.6 2.1 5.0 1.9
130 7.6 2.3 10 2.5
140 8.7 2.4 25 3.5
- 150 10 2.5 50 4.6
1O0 6.0
-Ea 1
exP
I nT 8.617 x 10- 150 7.1
Column 1: Ea = .2 np = (Power D i s ~ i p a t i o n ) . ~ ~
Column 2: Ea = .O8
T PResistor Case Temperature. Can be.approximated

as ambient component temperature for low
power dissipation non-powertype resistors.
NOTE: 'CTvalues shown should only be used up to

the temperature ratingof the device. For
devices with ratings higher than 150°C, use
the equation to determinex,-.
9-2 Supersedes page Section 9.0 - 9.17 of Revision F

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F CHG N O T I C E 2 9999970 0397048 7 5 T
MIL-HDBK-217F
NOTICE 2
9.1 RESISTORS
Power Stress FactorI - C ~ Environment Factor- IC€

Environment ICE
Power Stress Column 1 Column 2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
GB 1 .o
.1 .79 ‘66
GF 4.0
.2 .88 .81
GM 16
.3 .99 1.o
NS 12
.4 1.1 1.2
NU 42
1.5 .5 1.2
1.8 .6 1.4 18
.7 1.5 2.3 AIF 23
2.8 .8 1.7 AUC 31
.. c- l I 1.9 I 3.4 AUF 43

ARW 63
Column 1 : zs = .71e1.1( S ) .50
SF
MF 37
ML 87
Actual Power Dissipation CL 1728
S =
Rated Power
Quality Factor- I C ~
Quality I ICQ
Established Reliability Styles
S
R
I 0.1
.O3
P 0.3
M 1.o
Non-Established Reliability
Resistors (Most Two-Letter Styles) 3.0
Commercial or Unknown Screening

Level 10
NOTE: Established reliability styles are failure

rate graded(S, R, P, M) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter styles with an “R”Suff ¡x.

MIL-HDBK-ZL7F CHG N O T I C E 2 9 9 9 9 9 7 0 0397049 b7b
MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
'P=% T C V SR 'TCQ7cE Failures/106 Hours

X 'TC 7~ 'TC
'ETTable - zc Table - E
',, Table -
Capacitor
Style I Spec.
MIL-C-
Description
Capacitor, Fixed, Paper- .O0037

Use
Column:
1
Use
Column:
1
U se
Column:
1
%R
1
Dielectric, Direct Current
(Hermetically Sealed in Metal
Cases) ~
Capacitor, By-pass, Radio - .O0037 1 1 1

Interference Reduction, Paper
Dielectric, AC and DC
(Hermetically sealed in Metallic
Cases)
cz, cm 1 1693 Capacitor, Feed through, Radio .O0037 1 1 1 1
Interference Reduction AC and
DC (Hermetically sealed in metal
cases), Established and
Nonestablished Reliability
CQ, CQR 19978 Capacitor, Fixed Plastic (or .O0051 1 1 1 1
Paper-Plastic) Dielectric
(Hermetically sealed in metal,
ceramic or glass cases),
Established and Nonestablished
Reliability
ai 18312 Capacitor, Fixed, Metallized .O0037 1 1 1 1
(Paper, Paper Plastic or Plastic
Film) Dielectric, Direct Current
(Hermetically Sealed in Metal
Cases)
CHR 39022 Capacitor, Fixed, Metallized .O0051 1 1 1 1
Paper, Paper-Plastic Film or
Plastic Film Dielectric
m 555 14 Capacitor, Fixed, Plastic (or .O0051 I 1 1 l
Metallized Plastic) Dielectric,
Direct Current in Non-Metal Case:
T
Capacitor, Fixed Supermetallized .O0051 1 1
Plastic Film Dielectric (DC, AC or
DC and AC) Hermetically Sealed
in Metal Cases, Established
Reliability
Capacitors, Fixed, Mica Dielectric
39001 Capacitor, Fixed, Mica Dielectric,
.O0076
.O0076
2
2
1
1
2
2
-
1
1
Established Reliability
10950 Capacitor, Fixed, Mica Dielectric, .O0076 2 1 2 1
Button Style
CY 11272 Capacitor, Fixed, Glass Dielectric .O0076 2 1 2 1
I Capacitor, Fixed, Glass

23269 Dielectric, Established Reliability
.O0076 2 I 2
-
1
Supersedes Section 10.1

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
- 10.20 of Revision F 10-1
MIL-HDBK-217F C H G N O T I C E 2 9999570 0397050 308 D
MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
I I
Description
CK 1 1O1 5 Capacitor, Fixed, Ceramic

Dielectric (General Purpose)
CKR 4 Capacitor, Fixed, Ceramic 3901 .o0099
Dielectric (General Purpose),
C C , CCR 20 Capacitor, Fixed, Ceramic .o0099
Dielectric (Temperature
Compensating), Established and
Nonestablished Reliabilihr
Capacitor, Chip, Muttiple Layer, .o020
Fixed, Ceramic Dielectric,
CSR 39003 capacitor, Fixed, Electrolytic .O0040
(Solid Electrolyte), Tantalum,
CWR 55365 Capacitor, Fixed, Electrolytic .O0005

(Tantalum), Chip, Established
Reliability
CL 3965 Capacitor, Fixed, Electrolytic ,00040

(Nonsolid Electrolyte), Tantalum
CLR 39006 Capacitor, Fixed, Electrolytic .O0040
(Nonsolid Electrolyte), Tantalum,
CRL 83500 Capacitor, Fixed, Electrolytic .O0040
(Nonsolid Electrolyte), Tantalum
Ca?hode
Capacitor, Fixed, Electrolytic .o0012
(Aluminum Oxide), Established
Reliability and Nonestablished
Reliability
CE Capacitor, Fixed Electrolytic (DC, 62.o0012
Aluminum, Dry Electrolyte,
Polarized)
cv 81 Capacitor, Variable, Ceramic .O079
Dielectric (Trimmer)
PC 14409 Capacitor, Variable (Piston Type, .O060
Tubular Trimmer)
(TT Capacitor, Variable, Air Dielectric.O000072
92
(Trimmer)
CG 83 Capacitor, Fixed or Variable, 231 .O060
Vacuum Dielectric
10-2 Supersedes
Section 10.1 - 10.20 of Revision F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F CHG NOTICE 2 9999770 0377053 244 D
MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
Temperature Factor - XT Capacitance Factor TC -

.r
Capacitance,
T(%) Column 1 Column 2 C(cLF) Column 1 - Column 2
20 .91 .79 .000001 .29 .04
30 1.1 1.3 .o0001 .35 .07
40 1.3 1.9 .o001 .44 .12
50 1.6 2.9 .o01 .54 .20
60 1.8 4.2 .o1 .66 .35
70 2.2 6.0 .O5 .76 .50
80 2.5 8.4 .1 .81 .5 9
90 2.8 11 .5 .94 .85
1O0 3.2 15 1 1 .o 1 .o
110 3.7 21 3 1.1 1.3
120 4.1 27 8 1.2 1.6
130 4.6 35 18 1.3 1.9
140 5.1 44 40 1.4 2.3
150 5.6 56 200 1.6 3.4
1O00 1.9 4.9
nT = exp ( 1
T + 273298 3000 2.1 6.3
1O000 2.3 8.3
Column 1: Ea = .15
30000 2.5 11
Column 2: Ea = .35 60000 2.7 13
T = Capacitor Ambient Temperature 120000 s
2.9 -
A
15
NOTE: 1. zT values shown should only be use
up to the temperature fatingof the
Column 1: 7tc = c .o9
device.
Column 2: TC = c.23
2. For devices with ratings higher than
150°C, use the equation to determin
T applications above 15OOC).
~ C(for
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F CHG N O T I C E 2 9 9 9 9 907109 7 0 5 2 180
MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
Voltage Stress Factor xv -

Voltage Stress Column 1 Column 2 Column 3 Column 4 Column 5
0.1 1 .o 1 .o 1 .o 1 .o 1 .O
0.2 1 .o 1 .o 1 .o 1 .o 1.1
0.3 1 .O 1 .o 1 .1 1 .O 1.2
O .4 1 .1 1 .O 1.3 1 .O 1.5
0.5 1.4 1.2 1.6 1 .O 2.0
0.6 2.0 2.0 2.0 2.0 2.7
0.7 3.2 5.7 2.6 15 3.7
0.8 5.2 19 130 3.4 5.1
0.9 8.6 59 4.4 990 6.8
5.6 5900 9.0
Column 1: 'zv = ( 3 5 + 1
Column 2: nv = ($)'O +1
column 3: 'zv = (2>"+ 1 S =

Operating Vpltage
Rated Voltage
of applied DC voltage and peakAC voltage.

Note: Operating voltage is the sum
Series Resistance Factor

- xSR
(Tantalum CSR Style Capacitors Only)
L
Circuit Resistance, CR (ohms/volt)

-
>0.8 .66
>0.6 to 0.8 1 .O
>0.4 to 0.6 1.3
>0.2 to 0.4 2.0
>0.1 to 0.2 2.7
o to 0.1 - 3.3
Eff. Res. Between Cap. and Pwr. Supply

CR = Voltage Applied to Capacitor
10-4 Supersedes Section 10.1 - 10.20 of Revision F

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

flIL-HDBK-217F CHG NOTICE 2 9 9 9 7 9 7 0 0 3 9 7 0 5 3 0x7 a
MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
Environment Factor X- -
~~~
Non-Established Reliability
Capacitors (Most Two-Letter Styles) 3.0
Commercial or Unknown Screening

Level 1o.
NOTE: Established reliability styles are failure

rate graded (D, C, S, etc.) basedon life testing
defined in theapplicable military device
specification. This category usually applies only
to three-letter styleswith an "R" Suff¡x.

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

VIL-HDBK-217F CHG NOTICE 2 H 9997970 0397054
T53
MIL-HDBK-217F
NOTICE 2
10.2 CAPACITORS,
EXAMPLE
Example
Given: A 400 VDC ratedcapacitortypeCQ09AlKE153K3isbeingusedinafixedground

environment, 50°C component ambient temperature, and200 VDC applied with50 Vrms @
60 Hz. The capacitoris being procured in full accordance with the applicable specification.
The letters "CQ"in the type designation indicate that the specificationis MIL-C-19978 and thatit is a Non-
Established Reliability quality level. The "E" in the designation correspondsto a 400 volt DC rating. The
"153" in the designation expresses the capacitance in picofarads. The first two digits are significant and
the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
picofarads. (NOTE: Pico = 1O-1 2, p = 1O-6)
Based on the given information the following model factors are determined from the tables shown in
Section 10.1.
hb = .O0051
XT = 1.6
xc = .69 Use Table Equation (Note 15,000pF = .O15 pF)
xv 2.9 S = DC Volts Applied + fi (AC Volts Applied)

DC Rated Voltage
200 + fi (50) =
S =
40 O
nSR 1
XQ = 3.0
XE = 10
10-6 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Supersedes Section 10.1 - 10.20of Revision F
flIL-HDBK-237F CHG N O T I C E 2 9999970 0397055
99T
MIL-HDBK-217F
NOTICE 2
11.1 INDUCTIVE DEVICES,
TRANSFORMERS
SPECIFICATION STY LE
DESCRIPTION
MIL-T-27 Power
Pulse
High
Audio,
Power
andTF
MIL-T-21038 TP Low Power Pulse
MIL-T-55631 Intermediate Frequency (IF), RF and Discriminator
-
Base Failure Rate 3.0
Quality Factor - xn
!
Transformer hb (F/1O6 hrs.)
Flyback (< 20 Volts) .O054

MIL-SPEC
Audio (15 -20K HZ) .O1 4 Lower
Low Power Pulse .o22
(Peak Pwr.< 300W,
Avg.
Pwr. 5W)
Environment Factor - x,1
High Power, High

Power Pulse (Peak
,049
1 Environment 1 XE 1
Power 2 300W, Avg. GB 1.o
Pwr. 2 5W)
GF 6.0
RF (10K - 10M HZ) .13 12
GM
Temperature Factor- nT NS 5.0
NU 16
XT
20 .93 AIC 6.0
30 1.1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
40 1.2 AIF 8.0
50 1.4 AUC 7.0
60 1.6
70 1.8 AUF 9.0
80 1.9
90 2.2 ARW 24
1O0 2.4 SF .50
110 2.6
120 2.8 MF 13
130 3.1
140 3.3 ML 34
150 3.5 CL 61 O
160 3.8
170 4.1
180 4.3
190 4.6
THS = Hot Spot Temperature(“C),

See Section
11.3. This prediction model assumes that the
insulation rated temperature is not exceeded
for

flIL-HDBK-217F C H G NOTICE 2 m 9 9 9 9 9 7 0 0197056 826 m
MIL-HDBK-217F
NOTICE 2
11.1 INDUCTIVE
DEVICES,
TRANSFORMERS
Transformer
Characteristic
Determination
Note
MIL-T-27
Example
Designation
G4 576
TF
I
MIL-T-27
i
Grade
i
Insulation
Family
O¡ I
Case
Class Symbol
Family Type Codes Are:
Power Transformer and Filter: O1 through 09,

37 through 41
Audio Transformer: 10 through 21, through
50 53
Pulse Transformer: 22 through 36,54
MIL-T-21036
Example
Designation
TP 4 Q X1 1OOBCOOl
I
MIL-T-21038
I
Grade
I
Insulation
Class
MIL-T-55631. The Transformers are Designated

with the following Types, Grades and Classes.
Type I - Intermediate Frequency Transformer

Type II - Radio Frequency Transformer
Type 111 - Discriminator Transformer
Grade 1 - For Use When immersion and

Moisture Resistance Tests are
Required
Grade2 - For Use When Moisture Resistance
Test is Required
Grade3 - For Use in Sealed Assemblies
Class O - 85°C Maximum Operating

Temperature
Class A - 105°C Maximum Operating
Temperature
Class B - 125% Maximum Operating
Temperature
Class C - > 125°C Maximum Operating
Temperature
The class denotesthe maximum operating

temperature (temperature rise plus maximum
ambient temperature).

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F CHG N O T I C E 2 9999970 0397057 762
MIL-HDBK-217F
NOTICE 2
11.2 INDUCTIVE
DEVICES, COILS
SPECIFICATION
DESCRIPTION STYLE
MIL-C-15305 - RF
Variable,
and Fixed
M IL-C-83446 - Variable,
and
Fixed RF, Chip
MIL-C-39010 - Molded, RF, Est. Rel.
'P=', T Q E
n: Failures/106 Hours
Base Failure Rate- & Quality Factor - XQ

Quality "Q
S .03
Fixed
Inductor or Choke .O00030
R .1o
P .30
Temperature Factor - M 1.o

1.o
THs(°C) "T 1 MIL-SPEC
Lower 3.0
20 .93
30 1.1
40 1.2
Environment Factor- IC,
50 1.4 1
60 1.6
Environment
1 "E
70 1.8 GB 1 .o
80 1.9 GF 6.0
90 2.2 12
GM
1O0 2.4
NS 5.0
110 2.6
120 2.8 NI I 16
130 3.1 6.0
140 3.3 8.0
AIF --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
150 3.5
AUC 7.0
160 3.8
170 4.1 *UF 9.0
180 4.3 ARW 24
190 4.6 SF .50
MF 13
ML 34
CL 61 O
THs = Hot Spot Temperature ("C),
See Section 11.3

MIL-HDBK-217F
NOTICE 2
11.3 INDUCTIVE
DEVICES,
DETERMINATION OF HOT SPOT
TEMPERATURE
Hot Spot temperaturecan be estimated as follows:

THS = TA + 1.1 (AT)
where:
THS = HotSpotTemperature("C)
TA = InductiveDeviceAmbientOperatingTemperature("C)
AT = AverageTemperatureRiseAboveAmbient("C)
AT can either be determined bythe appropriate "Temperature Rise" Test Method paragraph in thedevice base
specification (e.g., paragraph 4.8.12 for MIL-T-27E),
or byapproximation using one of the procedures
described below. For space environments a dedicated thermal analysis should be performed.
AT Approximation (Non-space Envir Iments)
Information Known AT Approximation
1. MIL-C-39010SlashSheetNumber
MIL-C-39010/1C-3C, 5C, 7C, 9A, 10A, 13,14 AT = 15°C
MIL-C-39010/4C, 6C, 8A, 11, 12 AT = 35°C
2. Power
Loss AT = 125 WL/A
Case Radiating Surface Area
3. Power
Loss AT = 11.5 WL/(Wt.).6766
Transformer Weight
4. Input
Power AT = 2.1 Wl/(Wt.). 6766
Transformer Weight
(Assumes 80% Efficiency)
WL = Power Loss (W)
A = RadiatingSurfaceArea ofCase (in2).See below forMiL-T-27CaseAreas

Wt. = TransformerWeight(Ibs.)
W, = Input Power (W)
NOTE: Methods are listedin preferred order(Le., most to least accurate). MIL-C-39010 are micro-
miniature deviceswith surface areas less than1 in2. Equations 2-4 are applicableto devices with
surface areas from 3 in2to 150 in2. Do not includethe mounting surface when determining radiating
surface area.
MIL-T-27 Case Radiatinc Areas (Excludes Mounting Surface)
Case Area (in2) Case Area (in2) Case Area (in2)
AF 4 GB 33 82 LB
AG 7 GA 43 LA 98
AH 11 HB 42 MB 98
AJ 18 HA 53 MA 115
EB 21 JB 58 NB 117
EA 23 JA 71 NA 139
FB 25 KB 72 OA 146
FA 31 KA 84
11-4 Supersedes pages 11-4 and 11-5 of Revision F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F CHG N O T I C E 2 9999970 0397059 5 3 5 m
MIL-HDBK-217F
NOTICE 2
12.1 ROTATING DEVICES, MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to
polyphase, capacitor start and run and shaded pole motors. It's application may be extended to other types of fractional
horsepower motors utilizing rolling elementgrease packed bearings. The model is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor
applications. The model is based on References 4 and 37, which contain a more comprehensive treatment of motor life
, prediction methods. The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds
exceed 24,000rpm or motor loads include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The
failure rate model in this section is an average failure rate for the motor operating over time period '7". This time period is
either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or
replacement). The model assumes that motors are replaced upon failure and that an effective constant failure rate is
achieved after a given time due to the fact that the effective "time zero" of replaced motors becomes random after a
significant portion of the population is replaced. The average failure rate, A , can be treated as a constant failure rate and
P
added to other part failure rates from this Handbook.
[- + h2 ]
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
hl
1P = AUB BC~W x lo6 Failures/106 Hours
Bearing & Winding Characteristic Life - a~ and aw

TA ?c) aB (Hr.1 TAaw (HI.) ("c) aB (Hr.) aw W.)
O 3600
70 6.48+06 e+05
22000 1.1
10 13000 3.28+06 7.0e+04
80 14000
20 39000 1.6e+06 90 91O0 4.6e+04
30 78000 8.9e+05 1O0 61O0 3.1 e+04
40 80000 5.08+05
4200 110 e+04 2.1
50 55000 2900
2.98+05 120 1.56+04
60 35000 1.8e+05
21 130 O0 1.08+04
7.56+03 1500 140
aB = I
L
2357
[TA + 273 - 1.831
clw = 10
aB = Weibull
Charact eristic Life forthe Motor Bearing
aw E Weibull Characteristic Life for

the Motor Windings
TA = Ambient Temperature ("C)
NOTE: See page 12-3 for method to calculate

aB and a,,,,when temperatureis not constant.
Supersedes page 12-1 of Revision F

12-1
M I L - H D B K - 2 1 7 FC H GN O T I C E 2 9999970 01'170b0 257
MIL-HDBK-217F
NOTICE 2
A and B Determination h, and

Determination
I Motor TvDe I A 1 B I
Electrical (General) 1.1 1.9
hl Or h2
Sensor .48 .29 o - .10 .13
Servo 2.4 1.7
.11 - -20 .15
Stepper 11 5.4
.21 - .30 .23
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Example Calculation .31 - .40 .31
A general purpose electrical motor is operating at .41 - .50 .4 1

50°C in a system witha 10 year design life(87600
hours) expectancy, .51 - .60 .51
aB = 55000 Hrs. .61 - .70 .6 1
aW = 2.9e + 5 Hrs. .71 - .80 .68
LC -
87600 Hrs. .81 - .90 .76
"
= 1.6
"B 55000 Hrs.
z 1.0 1 .o
LC - 87600 Hrs.
.3
+ 5 Hrs. =
"
"W 2.9e -Cis the system design life cycle(in hours), or

he motor preventive maintenance interval,if
hl = 1.0 (for E= 1.6)
notors will be periodically replaced or
.efurbished.
Determine hl and separately
I n I,-.
lased on the
respective and
ratios.
I h2
A
=
=
.23
1.9
aB "W
B = 1.1
I %=
1.0
[(1.9)(55000)
+
(1.1)(2.9e + 5)
hp = 10.3 Failures/lO6 Hours

MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NOTICE 2
aCalculation for Cycled Temperature
The following equation canbe used to calculate a weighted characteristiclife for both bearings and windings
(e.g., for bearings substituteaB for all a's in equation).
hl + h2 + h3 +-""-h,
a =h 2h l
-+
a a
-+ h- 3
+ """_ h-
m
1 2 "3 am
where:
a = either aB or aw
hl = TimeatTemperature Tl
h2 = Time to Cycle From Temperature Tl to T3
h3 = TimeatTemperatureT3
hm = TimeatTemperatureTm
al = Bearing (or Winding) Life atTl
= Bearing (or Winding) Life at T2

a2
T1 + T 3 T3 +
NOTE: T2 = , T4 = 2
Hours (h)
Thermal Cycle
Supersedes page 12-3 of Notice 1 12-3

MIL-HDBK-217F CHG N O T I C E 2 H 9999970 0397062 02T
MIL-HDBK-217F
NOTICE 2
12.2 ROTATING DEVICES,

SYNCHROS AND RESOLVERS
DESCRIPTION
Rotating Synchrosand Resolvers
%=‘b
IC n x Failures/106Hours
S N E
NOTE: Synchros and resolvers are predominately used in service requiring only slowand infrequent motion.
Mechanical wearout problems are infrequent so that the electrical failure mode dominates, and no
mechanical mode failure rate is required
in the model above.
Number of Brushes Factor- nN

J
‘b Number of Brushes ICN
30 .O083 .O32 12 1.4

35 .O088 .O41
40 .O095 .O52 3 2.5
45 .o1 o .O69
50 .o1 1 ,094 4 3.2
55 .O1 3 110 .13
60 .O14 115 .19
65 .O16 120 .29
70 .o1 9 125 .45 Environment Factor- IC=
75 .o22 .74 L
80 .O27 1.3 Environment TE

1.o
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
GB
\ = .O0535 exp (
TF+273
334 ) 8.5
GF 2.0
GM 12
TF = Frame
Temperature
(“C)
NS 7.O
If Frame Temperatureis Unknown Assume 18
TF = 40 “C + Ambient Temperature NU
AIC 4.0
AIF 6.0
AUC 16
Size Factor nS - 25
AUF
xS 26
DEVICE Size 8 or Size 10-16 Size 18 or ARW
TYPE Smaller SF .50
MF 14
Synchro 2 1.5 1
ML 36
Resolver 3 2.25 1.5
CL 680
12-4 Supersedes page 12-4 of Notice 1

~~ ~
MIL-HDBK-217F C H G N O T I C E 2 7 9 9 9 9 7 0 0197063 T b b
MIL-HDBK-217F
NOTICE 2
12.3 ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION
Elapsed Time Meters
h, = hbynEFailures/l O6 Hours
Base Failure Rate- A,+. Environment Factor - nCE

I Type I Environment I “E
I Inverter
Driven
I 2o
30
1 .o
2.0
12
Commutator D.C.
I 80
7.0
18
5.0
Temperature Stress Factor - ‘CT
8.0
Operating T (OC)/Rated
T (“c)
16
o to .5 25
26
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.50
.a
1 .o I .8
1.0
14
38
NIA

MIL-HDBK-217F
NOTICE 2
13.1 RELAYS,
MECHANICAL
MIL-R-5757 MIL-R-83516 Relay Mechanical
MIL-R-6106 MIL-R-83520
MIL-R-83536
MIL-R-13718
MIL-R-83725
MIL-R-19648
MIL-R-19523
MIL-R-83726
(Except
Class C, Solid
State Type)
MIL-R-39016
P' = 'bxLKC"CYC X
F7tQ E Failures/106 Hours
Base Failure Rate- A+, Load Stress Factor - xI
TA ("C) 850C1 5 Resistive

25 .o059 .05
30 .O067 .O066 .1 o 1.O6 1.28
35 .O075 .O073 .20 2.72 1.28
40 .O084 .O081 .30 9.49 1.76
45 .O094 .O089 .40 2.72 54.6
50 .o1 o .O098 .50 4.77
55 .o12 .o1 1 .60 9.49
60 .O13 .o12 .70 2.1 5 21.4
65 .O14 .O13 .80 2.72
70 .O1 6 .O14 .90 3.55
75 .O1 7 .O15 1.o0 1 4.77
a
80 .o1 9 .O17
85 .o21 .O18
90 .o19
95 .o2 1
1O0
105
110
.o22
.O24
.O26
2. nL = exp (3) E
rating Load Current
HatzResistive Load Current
115 .O27
120 .O29 For single devices which switch
two different load types,
125 evaluate nL for each possible stress load type
combination and use the worse case (largestnL).
-.19 1 1
1. l,, .O059 exp
( 8.617 X 10-5 [ - z]) Cycling Factor- xcYc
-.17 1 1 Cycle Rate
2. l,,= .O059exp
( 8.617 X 10-5 [ - z]) (Cycles per
MIL-SPEC
Hour)
TA = Ambient
Temperature
("C) 2 1.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Contact Form Factor - xc Rate Cycle xcYc

(Cycles
Hour)
per(Commercial
Quality)
(Applies to Active Conducting Contacts)
Contact Form nC > 1000
1
SPST 1.o0
SPDT
1.50 DPST
1.75
10 10 1000 - 1 Cycles per Hour
2.00 3PST
4PST 2.50
3.00 DPDT basic design limitationsof the relay are not valid. Design
4.25 3PDT specifications should be consulted prior to evaluation of
4PDT 5.50
6PDT 8.00 %YC 1
MIL-HDBK-217F CHG NOTICE 2 m 9999970 0397065 839 =
MIL-HDBK-217F
NOTICE 2
13.1 RELAYS, MECHANICAL
Quality Factor - 7cC - "F

APlplication and Construction Factor
1
r
Quality Contact Application Construction
- Rating Type TV De
R .1o Signal Dry Circuit Armature (Long)
i
Current Dry Reed
P .3O (Low mv Mercury Wetted
and ma) Magnetic Latching
X .45 Balanced Armature
U .60 Solenoid 1 7
0-5 Amp General Armature
(Long) 1 3
M 1 .o Purpose Armature
L 1.5 Sensitive Armature (Long and
MIL-SPEC, Non-Est. Rel. 1.5
-
(O 100 mw) Short)
Mercury Wetted
Commercial 2.9 Magnetic Latching
L
Movement
Meter 1O0
Balanced Armature
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Polarized
Environment Factor- SC,
Vibrating
Environment "E Reed
High Speed
GB 1 .o Short) I
=F 2.0
Thermal Time
GM 15 Delay
Electronic
8.0 Time Delay,
Non-Thermal r
27 Latching,
Reed Dry 10
Magnetic Wetted
Mercury 5
AIC 7.0 armature
Balanced 5
9.0 5-20 Amp High Voltage
20 (Glass)
Vacuum
AIF (Ceramic)
Vacuum 5
AUC 11 Medium Armature
(Long
and 3
Power Short)
AUF 12 Wetted
Mercury 1
Latching
Magnetic 2
ARW 46 Mechanical
Latching 3
.50 2
Balanced
Armature
SF Solenoid 2
MF 25 25-600 Contactors Armature (Short)
Amp (High Mechanical Latching
ML 66 Current) Balanced Armature
CI N/A
13-2 page
MIL-HDBK-217F CHG NOTICE 2 7999970 OL970bb 7 7 5
MIL-HDBK-217F
NOTICE 2
13.2 RELAYS, SOLID STATE AND TIME DELAY
MIL-R-28750 Relay, Solid State
MIL-R-83726 Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rateof solid state (and solid state time delay) relays
is to sum
the failure rates forthe individual components which makeup the relay. The individual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following default model can be
used:
hp = A ~ ~ c c Failures/106
Q~c~ Hours
Base Failure Rate- Environment Factor- xE

I
Type Relay I hh I Environment
GB 1.o
Solid State .O29
GF 3.0
Solid State Time Delay .O29
GM 12
Hybrid .O29 6.0
NS
NU 17
AIC 12
Quality Factor- zQ 19
AIF
I Quality I "0 I AUC 21
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
MIL-SPEC 1.o AUF 32
ARW 23
Commercial 1.9
SF .40
MF 12
ML 33
CL 590

MIL-HDBK-ZL7F CHG N O T I C E 2 m 9999770 Ol1970b7 bDL m
MIL-HDBK-217F
NOTICE 2
14.1 SWITCHES
Centrifugal
Liquid Level
Microwave
(Waveguide)
Pressure
Pushbutton
Base Failure Rate- 2
Description
Dual-In-line Package
Limit
Spec.
M IL-S-
NIA
83504
8805
21 277
N/A
8932
9395
121 1
8805
'P='b
4.3
2.3
1.7
2.8
X X
.1o
LC
Ab (F/106 Hrs.)
3.4
.o0012
IC 7[:
Q E Failures/106 Hours
Stress
S
0.05
o. 1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.o
Load Stress Factor-
Resistive
1.o0
1 .o2
1.O6
1.28
1.48
1.76
2.1 5
2.72
3.55
Load Type
Inductive
1.o2
1.O6
1.28
1.76 1.15
2.72
4.77
9.49
21.4
p
22885
2431 7 Operating Load Current
Reed 55433 .o010 S=
Rated Resistive Load Current
Rocker 3950 .O23
22885
Rotary 3786 .11 XL = exp
(S/.8)2 for Resistive Load
13623
15291 = exp
(S/.4)2 for Inductive Load
15743 xL = exp
(S/.2)2 for Lamp Load
22604
2271O
45885 NOTE: When the switch is rated by inductive load,
82359 then use resistive xI .
Sensitive 8805 .49
13484 Contact Configuration Factor'- X- LØ
2261 4
## of Contacts,
Thermal 12285 .O31
24286 Contact Form NC ICC
Thumbwheel 2271 O -18 SPST 1 1.o
Toggle 3950 .1o DPST 2 1.3
5594
8805 SPDT 2 1.3
8834 3p5t 3 1.4
941 9 4p5t 4 1.6
13735 DPDT 4 1.6
81551 3PDT 6 1.8
83731 4PDT 8 2.0
6PDT 12 2.3
KC = (NC). 33
Applies to toggle and pushbutton switches only,

all others usexC = 1.
Supersedes
page 14-1 through 14-4 of Revision F --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
14-1
MIL-HDBK-ZL7F C H G N O T I C E 2 9 9 9 9 9 7 0 OL970b8 5 4 8
MIL-HDBK-217F
NOTICE 2
14.1 SWITCHES
Quality Factor - xQ Environment

I Quality 1 XQ 1 I Environment
MIL-SPEC 1 GB 1 .o
Lower 2 GF 3.0
I GM
18
I NS
29
8.0
NU
AIC 10
AIF 18
I AUC
AUF
13
22
ARW 46
SF .50
MF 25
ML 67
I CL
1200
14-2 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Supersedes page 14-1 through 14-4 of Revision F
MIL-HDBK-217F
NOTICE 2
14.2 SWITCHES, CIRCUIT

BREAKERS
MIL-C-13516 Circuit Breakers, Manual and Automatic
MIL-C-55629 Circuit Breakers, Magnetic, Unsealed, Trip-Free
MI L-C-83383 Circuit Breakers, Remote Control, Thermal, Trip-Free
MIL-C-39019 Circuit Breakers, Magnetic,Low Power, Sealed, Trip-Free Service
w-c-375 Circuit Breakers, Molded Case, Branch Circuit and Service
h, = h b ~ C 7 t U ~Failures/l
Q~E O6 Hours
Base Failure Rate- Quality Factor- ~n
Description ‘b Quality nQ
Magnetic .34 MIL-SPEC 1.o
Thermal .34 I Lower

I 8*4 I
Thermal-Magnetic .34
1 I I
Environment Factor- 7tr
L
Environment
Configuration Factor- nc
GB 1 .o
Configuration
GF 2.0
GM 15
DPST 8.0
NS
3PST 3.0 27
NU
4PST 4.0 7.0
AIC
AIF 9.0
AUC 11
Use Factor- zu AUF 12
Use I I ARW 46
50
Not Used as a Power 1.o SF
On/Off Switch MF 25
66
I
Also Used as a Power 2.5 ML
On/Off Switch NIA
CL
Supersedes page 14-5 of Revision F

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
14-3

b
MIL-HDBK-217F CHG N O T I C E 2 9 9 9 9 9 7 0 0377070 17’6
MIL-HDBK-217F
NOTICE 2
15.1 CONNECTORS,
GENERAL
Failuredl O6
3Lp = hb~TnKnQnE Hours
APPLICATION NOTE: The failure rate model is for a mated pair of connectors. It is sometimes desirable to
assign half of the overall mated pair connector (Le., single connector) failure rateto the line replaceable unit and
half to the chassis (or backplane). An example of when this would be beneficial is for input to maintainability
prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This
accounting procedure could be significant if repair times for the two halves of the connector are substantially
different. For a single connector divide A,, by two.
Base Failure Rate- hU. Temperature Factor- nT

Specification To (“C) nT
Description MIL-C-
20 .9 1
Circular/Cylindrical 501 5 26482 .o01 o
26500 27599 30 1.1
28840 29600 40 1.3
38999 83723 50 1.5
3151 1 60 1.8
70 2.0
Card Edge (PCB)* 21 097 .O40
55302 80 2.3
90 2.7
Hexagonal 24055 .15 1O0 3.0
24056
110 3.4
Rack and Panel 243 08 .o21 120 3.7
2873 1 130 4.1
28748
835 15 140 4.6
150 5.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Rectangular 21617 .O46
24308 160 5.5
28748 170 6.0
28804 180 6.5
81 659
835 1 3 190 7.0
83527 200 7.5
83733 210 8.1
85028
220 8.6
RF Coaxial 3607 15370 .O0041 230 9.2
3643 25516 240 9.8
3650 26637
3655 39012 250 1o.
55235
8351 7
Telephone 55074 .O075
Power 22992 .O070 To = Connector Ambient + AT
Triaxial 491 42 .O036 AT = Connector Insert Temperature Rise

(See Table)
Printed Circuit Board Connector
Supersedes page 15-1 through 15-5’ of Revision F 15-1

MIL-HDBK-217F
NOTICE 2
15.1 CONNECTORS, GENERAL
DefauIlt Insert Temperature Rise MatingNnmating Factor - zK

lation
MatingNnmating Cycles’
Amperes - ict Gau(L
(per 1000 hours)
PerContact
2
30
10
20
2
~
16
1
--
12
O
IFK
O to .O5 1 .o
3 22 8 5 2 1
4 37 13 0 4 1 > .O5 to .5 1.5
5 56 19 13 5 2
6 79 27 18 8 3 > .5 to 5 2.0
7 36 23 10 4 > 5 to 50 3.0
8 46 30 13 5
9 57 37 16 6
10 70 45 19 7
15 96 41 15 *One cycle includes both connect and
20 70 26 disconnect.
25 106 39
30 54
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
35 72 Quality Factor - X Q
40 -
L
-92
Quality
AT = 3.256 (i)’.85 32 Gauge Contacts MIL-SPEC

AT = 2.856 (i)’ .85 30 Gauge Contacts Lower
AT = 2.286 (i)’ 28 Gauge Contacts
AT = 1.345(i)’ 24 Gauge Contacts Environment Factor - nE
AT = 0.989 (i)’ 22 Gauge Contacts Environment XE
AT = 0.640 (i)’ .85 20 Gauge Contacts
GB 1 .o
AT = 0.429 (i)’ .85 18 Gauge Contacts
AT = 0.274 16 Gauge Contacts GF 1 .o
AT = 0.100 (i)’ .85 12 Gauge Contacts GM 8.0
AT = NS 5.0
Insert Temperature Rise
i = Amperes per Contact NU 13
*IC 3.0
RF Coaxial
Connectors AT = 5°C AIF 5.0
RF Coaxial Connectors AU c 8.0

(HighPowerApplications) AT = 50°C 12
AU F
ARW 19
SF .50
MF 10
ML 27
CL 490
15-2 Supersedes page 15-2 through 15-5 of Revision F

~~
MIL-HDBK-217F CHG N O T I C E 2 9997970 0197072 T77 H
MIL-HDBK-217F
NOTICE 2
15.2 CONNECTORS, SOCKETS
II: Failures/106 Hours

5~ IC
'P=% P Q E
Base Failure Rate- Ilt, Active Pins Factor- x p

Spec. Number of Number of
Active Active
Description MIL-S 'b Contacts ZP Contacts nP
Dual-ln-Line Package 83734 .O0064 1 1.o 55 6.9
2 1.5 60 7.4
Single-ln-Line Package 83734 .O0064
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
3 1.7 65 7.9
.O0064 4 1.9 70 8.4
Chip Carrier 38533 2.0
5 75 8.9
Pin Grid Array NIA .O0064 6 2.1 80 9.4
7 2.3 85 9.9
Relay 12883 .O37 8 2.4 90 10
9 2.5 95 11
Transistor 12883 .O051 10 2.6 1O0 12
11 2.7 105 12
Electron Tube, CRT 12883 .o1 1 12 2.8 110 13
13 2.9 115 13
Quality Factor- xQ 14 3.0 120 14
15 3.1 125 14
16 3.2 130 15
Qualit 17 3.3 135 16
18 3.4 140 16
MIL-SPEC. 19 3.5 145 17
Lower 1 .o 20 3.6 150 18
25 4.1 155 18
30 4.5 160 19
Environment Factor- x= 35 5.0 165 20
40 5.5 170 20
45 5.9 175 21
50 6.4 180 22
q = .39
N = Number of ActivePins
An active contactis the conductive element

which mateswith another elementfor the
purpose of transferring electrical energy.

MIL-HDBK-217F
NOTICE 2
16.1 INTERCONNECTION ASSEMBLIES

WITH
PLATED
THROUGH
HOLES
kp = hb[N1 + +
xC N2(xc 13)
1 Failures/106 Hours
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the
plated through holes and assumesfailures are predominately defect related. For boards using surface mount
technology, use Section 16.2. For a mix of leaded devices mounted into plated through holes and surface
mount devices, usethis model for the leaded devices and use Section 16.2 for the surface mountcontribution.
A discrete wiring assembly withelectroless deposit plated through holesis basically a pattern of insulated wires
laid down on an adhesive coated substrate. The primary cause of failure for both printed wiring and discrete
wiring assemblies is associated with plated through-hole (PTH) problems (e.g.,
barrel cracking).
Base Failure Rate hb - Quality Factor- "Q
Quality
Technology b
' .
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Printed Wiring Assembly/Printed .O00017 MIL-SPEC or Comparable Institute for 1

Circuit Boards with PTHs Interconnecting, and Packaging
Electronic Circuits (!PC) Standards
Discrete Wiring with Electroless .o001 1 (IPC Level3)
Deposited PTH(2 2 Levels of Circuitry) -
Lower 2
-
Number of PTHs Factor N1 and N2
Factor Quantity
N1 Automated Techniques: Quantity of Environment Factor -

Wave Infrared (IR) or Vapor Phase
Soldered Functional PTHs Environment "E
GB 1 .o
N2 Quantity of Hand Soldered PTHs
GF 2.0
Complexity Factor - "C GM 7.0
Number of Circuit Planes, P 1
.o
"C
1
NS 5.0
s2 13
3 1.3 NU
4 1.6 AIC 5.0
5 1.8
6 2.0 AIF 8.0
7 2.2 16
8 2.4 AUC
9 2.6 AUF 28
10 2.8
*RW 19
11 2.9
12 3.1 .50
SF
13 3.3
14 3.4 MF 10
15 3.6
ML 27
16 3.7
17 3.9 500
18 4.0
CL
Discrete Wiring w/PTH I 1
"C = .65 P.63 2SP118

MIL-HDBK-217F CHG N O T I C E 2 9999970 0377074 841
MIL-HDBK-217F
NOTICE 2
16.2 INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY
APPLICATION NOTE: The SMT Model was developedto assess the life integrityof leadless and leaded
devices. It provides a relative measureof circuit card wearout due to thermal cycling fatigue failure of the
"weakest link SMT device. An analysis should be performed on all circuit board SMT components. The
component with the largest failure rate value (weakest link) is assessed as the overall board failure rate
due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and
the results do not consider solder or lead manufacturing defects. This model is based on thetechniques
developed in Reference 37.
h s =~ Average
~ failure rate overthe
expected equipment life cycle
due to surface mount device where:
wearout.This
failure
rate CR = Temperaturecyclingrate in
contribution to the system is for cycles per calendar hour. Base
theSurfaceMountDeviceon on a thermal analysisof the circuit
eachboardexhibiting
the board. Use table default values if
highest absolute value of the other estimates do not exist.
strain range:
Nf = Averagenumberofthermal
cycles to failure
ECF = Effective cumulative

number of
failures
Weibull
the
over where:
characteristic
life. d = Distance from center of device to
the furthest solder joint in mils
Effective Cumulative Failures- ECF (thousandths of an inch)
LC h Solderjoint
height
mils
in for
ECF =
aSMT leadless devices. Default to h = 8
for all leaded configurations.
0 -.1 .13
-
.11 .20 .15 as = Circuit boardsubstrate
thermal
.21 - .30 .23 coefficient of expansion(TCE)
.31 - .40 .31
.41 - 50 .41 AT = Use
environmenttemperature
.51 - .60 .51 extreme difference
.61 - .70 -61
.71 - .80 .68 WC = Package material
thermal
.81 - .90 .76 coefficient of expansion (TCE)
I > .9 I 1.o
TRISE = Temperaturerisedue to power
LC = Design
life
cycle of the dissipation (Pd)
equipment in which the circuit
board is operating.
Pd = eJCP
~ S M T= TheWeibull characteristic life. 8JC = Thermal resistance "/Watt
C~SMT is a functionof device and P = Power Dissipation (Watts)
substrate material, themanu-
facturing methods, and the nLC = Leadconfigurationfactor
application environment used.
16-2 --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
New Page
VIL-HDBK-217F CHG NOTICE 2 9 9 9 7 9 7 0 0397075 788
MIL-HDBK-217F
NOTICE 2
16.2 INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY
CR - Cycling Rate Defat Values - - Default TCE Substrate Values

as
Equipment Type Number of Substrate Material
Cycles/Hour
Automotive 1.o F R 4 Laminate 18
Consumer (television, radio, .O8 F R 4 Multilayer Board 20
recorder) FR-4 Multilayer Board w/Copper 11
Computer .17 Clad Invar
Telecommunications .O042 Ceramic Multilayer Board 7
Commercial Aircraft .25 5
Copper Clad Invar
Industrial .o21
Copper Clad Molybdenum 5
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Military Ground Applications .O3

Military Aircraft (Cargo) .12 Carbon-Fiber/Epoxy Composite 1
Military Aircraft (Fighter) .5 Kevlar Fiber 3
Quartz Fiber 1
"LC - Lead Configuration Factor Glass Fiber 5
I Lead Configuration I "LC Epoxy/Glass Laminate 15
Leadless 1 Polyamide/Glass Laminate 13
J or S Lead 150 Polyamide/Kevlar Laminate 6
Gull Wing 5,000 1 PolyamidelQuartz Laminate 8
Epoxy/Kevlar Laminate 7
a m - TCE Packaae Values
Alumina (Ceramic) 7
-Material I orcc AverageValue I Epoxy Aramid Fiber 7
I Plastic
Ceramic I 7
6 I Polyamide Aramid Fiber
Epoxy-Quartz
6
9
AT - Use Environment Default Fiberglass Teflon Laminates 20
Temperature Difference Porcelainized Copper Clad Invar 7
Environment AT Fiberglass Ceramic Fiber 7
GB 7
GF 21 EXAMPLE: A large plastic encapsulated
leadless chip carrier is mounted on a epoxy-
GM 26
glassprintedwiringassembly.Thedesign
NS 26 considerations are: a square package is 1480
mils on a side, solder height is 5 mils, power
NU 61
dissipationis .5 watts,thermalresistance is
AIC 31 20°C/watt,thedesignlife is 20yearsand
environment is military ground application. The
AIF 31
failure rate developed is the impact of SMTfor a
AUC 57 single circuit board and accounts for all SMT
57 devices on this board. This failure rate is added
AUF to the sum of all of the component failure rates
ARW 31 on the circuit board.
SF 7
ECF
MF N/A MT = -
aSMT
ML N/A
Nf
CL N/A aSMT = CR
New Page 16-3

flIL-HDBK-237F CHG N O T I C E 2 m 9999970 039307b b 3 4 m
MIL-HDBK-217F
NOTICE 2
16.2 INTERCONNECTIONASSEMBLIES, SURFACE MOUNTTECHNOLOGY
hFor
h: = 5 mils
For as: as = 15 (Table - EpoxyGlass)

For AT: AT = 21 (Table - GF)
For act: W C = 7 (Table - Plastic)
For TRISE: TRISE = 8JcP = 20(.5)= 10°C
For nLC: ~ L =C1 (Table - Leadless)
For CR: CR = .O3 cycles/hour(Table - MilitaryGround)
Nf = 18,893 thermal cycles to failure
= .O3 cyledhour
18,893 cycles= 629,767 hours
"
LC -
(20 yrs.) (8760 F) = .28
%MT 629,767 hrs.
ECF = .23 failures (Table - EffectiveCumulativeFailures)
ECF
MT = - .23 failures= ,0000004 failuredhour
aSMT E 629,767 hours
h s ~
= ~failures/l O6 hours
.4
16-4 New Page

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

NIL-HDBK-217F CHG N O T I C E 2 9999970 0377077 550
MIL-HDBK-217F
NOTICE 2
17.1 CONNECTIONS
APPLICATION NOTE: The failure rate model in this section applies to connections used on all assemblies
except those using plated through holes or surface mount technology. Use the Interconnection Assembly
Model in Section 16 to account for connections to a circuit board using either plated through hole technology
or surface mount technology. The failure rate of the structure which supports the connections and parts, e.g.,
non-plated-through hole boards and terminal straps, is considered to be zero. Solderless wrap connections are
characterized by solid wire wrapped under tension arounda post, whereas hand soldering with wrapping does
not depend on a tension induced connection. The following model isfor a single connection.
3p = %xE Failures/l O6 Hours
Base Failure Rate- L

U
Environment Factor- x ,
Connection Type +, (FAO6 hrs)
Hand Solder, w/o Wrapping .O013
Hand Solder, w/Wrapping .O00070
Crimp .O0026
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Weld .O00015
Solderless Wrap .O000068
Clip Termination .o001 2
Reflow Solder .O00069
Spring Contact .17
Terminal Block .O62
Supersedes page 17-1

17-1
of Revision F
NIL-HDBK-ZL7F RE m 9999970 O070860 8 m : .
MIL-HDBK-217F
18.1 METERS, PANEL
MIL-M-1 0304 Meter, Electrical Indicating, Panel Type, Ruggedized
X P % AXF XQ X n:E Failures/106 Hours
Ease Failure Rate L - Quality Factor zn -

I Quality I "O I
I All
I .o90
I MIL-"10304 1 .o
I
Lower 3.4
I
Application Factor - ..
I Application I XA 1 Environment Factor- x ,
L
Direct Current 1 .o Environment - "E

GB 1 .o
Alternating Current 1.7
I I I GF 4.0
GM 25
12
Function Factor xc - NS
35
I Function I - *F
NU
28
AIC
Ammeter 1.o 42
I AlF
.Voltmeter 1.o AUC 58
Other' 2.8 73
I AUF
60
~~ ~
ARW
' Meters whose basic meter movement construction SF 1.1
is an ammeterwith associated conversion elements.
MF 60
I
NIA
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
ML
CL NIA

. . . . " " . . . :
. . . . ..
.
-
.
.-
- .
m m
~
. ' MIL-HDBK-237F RE 9 9 9 9 9 7 00 0 7 0 8 6 3 T
~~
MIL-HDBK-217F
19.1 QUARTZ CRYSTALS

MIL-C-3098 Crystal Units, Quartz
X
'P = 'b Q E
x Failures/106Hours
Base Failure Environment Factor zE -

Frequency, f(MHz) "b Environment "E
GB . 1 .o
0.5 .o1 1
1.O .O13 GF 3 .O
5.0 .o19
10 .o22 GM 10
15 ,024 6.0
20 .O26 NS
25 .O27 16
30 .O28 r NU
35 ,029 12
. AIC
40 .O30 . 17
45 .O31 AIF
50 ,032 AUC 22
55 ,033
60 .O33 AUF 28
65 .O34 23
70 .O35 . ARW
75 .O35 SF .50
80 .O36
85 .O36 MF 13
90 .O37 32
.O37 ML
95 .
100 . .O37 500
105 ,038 i CL
_ .
hb = .013(f)*23
Quality Factor zQ - --``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
I Quality I Xn I
MIL-SPEC
Lower
19-1
NIL-HDBK-ZL7F R E 9999970 0070862 L
MIL-HDBK-217F
escent,Lamps, MIL-L-6363
w-L-111 Tungsten-Filament
Miniature,Incandescent, Lamps,
L h, = X , , ~ C ~ I CFailuredl
~K~ O6 Hours
APPLICATION NOTE: The data used to develop this model included randomly occurring catastrophic failures
and failures dueto tungsten filament wearout.
Base Failure Rate?+, - I
Environment Factor K, -
I Voltage,
Rated V, (Volts) I Ah I
5
6
I I .75
59
12
14
24 I ::: I- 1.8 .
l 28
37.5
I 5.4
Utilization Factor nu -
Utilization (IlluminateHourd
Equipment Operate Hours) leu
< 0.10 0.10
0.10 to 0.90 0.72

I > 0.90 . I . 1.0
I
Application Factor K .A _ -
Application I
Alternating Current 1 .o
Direct Current 3.3
20-1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

. .
.. . ..
' MIL-HDBK-217F RE 9 9 9 9 9 7 0 0070863 3 E
MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2 1.1 . ELECTRONICFILTERS,NON-TUNABLE
MIL-F-15733 Filters, Radio Frequency Interference
MIL-F-18327 Filters, High Pass, Low Pass, Band Pass, Band
Suppression, and Dual Functioning (Non-tunable)
The most accurate wayto estimate the failure rate for electronic filters
is to sum the failure rates for the individual
components which makeup the filter (e.g., IC's, diodes, resistors, etc.) using the appropriate models provided in
this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to
determine individual component failure rates. If insufficient information is. available then the following default
model canbe used.
A,, = XQ XE FailuresUO6 Hours
-
Base Failure Rate At, Environment Factor - 7cc .
I:
TY Pe 'b Environment. I "E
MIL-F-15733, Ceramic-Ferrite ,022
Construction (StylesF i 10-16, 22,
24, 30-32, 34,35, 38, 41-43, 45,
47-50, 61-65, 70, 81-93, 95, 96)
MIL-F-15733, Discrete LC .12
Componentsi (Styles FL 37, 53, 74)
, MIL-F-18327, Discrete LC .12 7.0
Components (Composition 1) 9.0
MIL-F-18327, Discrete LC and .27 11
CrystalComponents .
(Composition 2) 13
11
.80
7.0
Quality Factor- Z n 15
Quality 120
MIL-SPEC
Lower

MIL-HDBK-217F RE 7777778 0870Bb4 5 ~~
:
MIL-HDBK-217F
22.1 FUSES
W-F-1726 Fuse, Cartridge ClassH
W-F-1814 Fuse, Cartridge, High Interrupting Capacity
MIL-F-5372 Fuse, Current Limiter Type, Aircraft
b ML-F-23419 Fuse, Instrument Type
MIL-F-15160 Fuse, Instrument, Power and Telephone
(Nonindicating), Style F01
hp = +,ICEFailures/106 Hours
APPLICATION NOTE: The reliability modeling of fusespresentsauniqueproblem.’Unlikemostother
components, there is very little correlation between the numberof fuse replacements and actual fuse failures.
Generally whena fuse opens, or “blows,” something elsein the circuithas created-anoverload conditionand the
fuse is simply functioning as designed. This model is based on life test data and represents fuse open and
A short failure mode is most commonly
shorting failure modes due primarily to mechanical fatigue and corrosion.
caused by electrically conductive material shorting the fuse terminals together causing a to failure
open condition
when rated current is exceeded.
-
Base Failure Rate $ Environment Factor- xE
L
TY Pe I Environment xCE
1.o
I
I
W-F-1726, W-F-1814, MIL-F-
5372, MIL-F-23419, ML-F-15160
I I
GB
GF
GM
2.0
8.0
NS 5.0
NU 11
AIC 9.0
AlF 12
AUC a
15 .
AUF 18
ARW 16
SF .9o
MF 10
ML 21
CL 230
22-1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

.. . .
: MIL-HDBK-217F RE 9 9 9 9 9 7 0 0070865 7 m
MIL-HDBK-217F
23.1 MISCELLANEOUS PARTS

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
h,-. Failure
P
(Failures/lO6 Hours)
Rates for Miscellaneous Parts
Part Type Failure Rate
Vibrators (MIL-V-95)
60-cycle 15
120-cycle 20
400-cycle 40
Lamps
Neon Lamps 0.20
Fiber Optic Cables (Single Fiber Types Only) 0.1 (Per Fiber Km)
Single Fiber Optic Connectors' 0.10 -
Microwave Elements (Coaxial &Waveguide)

Attenuators (Fixed& Variable) See Resistors, TypeRD
Fixed Elements (Directional Couplers, Fixed Stubs

& Cavities) Negligible
Variable Elements (Tuned Stubs& Cavities) 0.10
Microwave Ferrite Devices

Isolators & Circulators (51OOW)
Isolators & Circulators (>1OOW)
Phase Shifter (Latching)
Dummy Loads
< 1oow
1oow to I 1ooow 0.030 X ZE
> 1ooow
in Stripline and Thin

-Terminations (Thin or Thick Film Loads Used 0.030X "E
Film Circuits)
'Caution: Excessive Mating-Demating Cycles May Seriously Degrade Reliability
23-1

. . . -
I ,NIL-HDBK-217F RE m 9999978 e30708bb 9 U
MIL-HDBK-217F
23.1 MISCELLANEOUS PARTS
- IC,
Environment Factor
L
Environment Factor- nE
(Microwave Ferri Devices) (Dummy L .ds)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Environment "E Environment "E

1.o GB 1 .o
2.0 GF 2.0
8.0 ,
GM 10
5.0. NS 5.0
12 NU ' 17
5.0 *IC 6.0
8.0 AlF 8.0 .
7.0 AUC 14
11 AUF 22
17 ARW 25 -
.50 SF .50
9.0 MF - . 14
24 ML 36
450 CL 660 .
23-2

MIL-HDBK-237F CHG N O T I C E 2 W 9999970 0 3 9 7 0 7 8 4 9 7 W
MIL-HDBK-217F
APPENDIX A: PARTS
COUNT
RELIABILITY
PREDICTION
-
Parts Count Reliability Prediction This prediction method is applicable during bid proposal
and early design phases when insufficient information is available to use the part stress analysis models
shown in the main bodyof this Handbook. The information needed to apply the method is (1) generic part
types (including complexity for microcircuits) and quantities, (2) pait quality levels, and (3)equipment
environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the
following tables, multiplyingit by a quality factor, andthen summing it with failure rates obtainedfor other
components in the equipment. The general mathematical expression for equipment failure rate with this
method is:
Equation 1
for a given equipment environment where:
hEQUIP = Totalequipmentfailurerate(Failures/106Hours)
= Generic failure rate for thei th generic part (FailuredlO6 Hours)

hg
"Q = Quality factor for the i th generic pari

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Ni = Quantity
of i th generic
part
n = Numberofdifferentgeneric pari categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment. If the equipment
comprises several units operating in different environments (such as avionics systems with units in
airborne inhabited (Al) and uninhabited (AU) environments), then Equation 1 should be applied to the
portions of the equipment in each environment. These "environment-equipment" failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in Section 3.
The quality factorsto be usedwith each part type are shown with the applicable hgtables andare not
necessarily the same values that are used in the Part Stress Analysis. Microcircuits have an additional
multiplying factor, xL, which accounts for the maturity of the manufacturing process. For devices in
production two years or more, no modification is needed. For those in production less than two years, h
9
should be multiplied by the appropriate
5tL factor (See pageA-4).
It should be noted that no generic failure rates are shown for hybrid microcircuits. Each hybrid
is a fairly
uniquedevice. Sincenone of thesedevices have beenstandardized, their complexitycannot be
determined from their name or function. Identically or similarly named hybrids can have a wide rangeof
complexity that thwarts categorizationfor purposes of this prediction method. If hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the prediction modelin Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the
failure rate models of Section 5 through 23. The specific defauR values used forthe model parameters are
shown with theh Tables for microcircuits. Default parameters for all other part classes are summarized in
9
the tables starting on Page A-12. For partswith characteristics which differ significantly from the assumed
defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1
flIL-HDBK-217F CHG N O T I C E 2 m 9999970 0397079 323 m
MIL-HDBK-217F
NOTICE 2
APPENDIX A: PARTS
COUNT
I I I l I 1 I
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A- 2 Supersedes page A-2 of Notice 1

--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

NIL-HDBK-217F CHG NOTICE 2 9999970 0397080 045
MIL-HDBK-217F
NOTICE 2
APPENDIX A: PARTS COUNT
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Supersedes page A-3 of Notice 1

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MIL-HDBK-2L7F C H G N O T I C E 2 7777770 OI197082 918
MIL-HDBK-217F
NOTICE 2
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--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F C H G N O T I C E 2 m 9 9 9 9 9 7 0 0397083 8 5 4 m
MIL-HDBK-217F
NOTICE 1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
A-6 Supersedes page A-6 of Revision F

MIL-HDBK-ZLi'F CHG N O T I C E 2 m 9 9 9 9 9 7 0 O L 9 7 0 8 Y 790
MIL-HDBK-217F
NOTICE 2
APPENDIX A: PAR' 5 COUNT
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--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F
NOTICE 2
APPENDIX A: PARTS
COUNT
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MIL-HDBK-217F C H G NOTICE 2 rn 9999770 OL9708b 563 rn
MIL-HDBK-217F
NOTICE 2
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Supersedes page A-9 of Revision F A-9

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MIL-HDBK-217F
NOTICE 2
A-1 O Supersedes page A-IO of Notice 1

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--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-ZL7F C H G N O T I C E 2 9999970 OL97089272
MIL-HDBK-217F
NOTICE 2
: A: PARTS COUNT
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flIL-HDBK-ZL7F CHG NOTICE 2 W 9999970 0397090 T 9 4
MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`--- NOTICE 1
Supersedes page A-13 of Revision F A-1 3

MIL-HDBK-217F
APPENDIX B: VHSICIVHSIC-LIKE AND VLSl CMOS-(DETAILED MODELL

'
a,
This appendix contains the detailed version of the
VHSICNLSI CMOS model containedin Section 5.3. It
to be accomplishedfor predominate
is provided to allow more detailed device level design trade-offs
failure modes and mechanisms exhibited in CMOS devices. Reference30 should be consulted for a
b detailed derivationof this model.
VHSICNHSIC-I IKF FAll URF RATF MODFL
+..&TCt) b N ( t ) + &Ac + km + hls(t)
Predicted Failure Rate asa Function of Time
Oxide Failure Rate
*Metallization Failure Rate
Hot Carrier Failure Rate
Contamination Failure Rate
Package Failure Rate
EOS/ESD Failure Rate
Miscellaneous Failure Rate
The equations for each of the above failure mechanism failure rates are as follows: .
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
A a Total Chip Area(in cm2)
l 3 ATYPEo~ .77 for Custom and Logic Devices,

1.23 for Memories and Gate Arrays
B- 1

..
1
!
MIL-HDBK-ZL7F RE m 9999970 0070886 4 m
MIL-HDBK-217F
APPENDIX B: VHSIC-VHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
OXlnF FAll URF RATF FQUATION (CONTINUED)
.21 cm2 3
gJ
-
Oxide Defect Density (If unknown, use where X. = 2 prn and X, is the feature
size of the device)

..
1 Defect/cm2
Effective Screening Time
(in I O 6 hrs.)) (ATox (at junction screening

(Actual Time of Test temp.)’ (in OK))*
ATOX
3 TemperatureAccelerationFactor, = exp [ -.3
8 . 6 1 7 ~ 1 0 ’(L
~TJ - k)]
(where TJ = Tc + ~ J C P( i n OK))
1
e
-192 (P
EOX
- 2 1. 5 )
Maximum Power Supply Voltage
VDD, divided by the gate oxide thickness(in
MV/cm) /
(QML) = 2 if on QML, .5 if not.

Sigma obtained from test data of oxide failures from the same or similar process.
If
not available, use aooxvalue of 1.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

MIL-HDBK-217F RE 9999970 0 0 7 0 8 8 7 b
MIL-HDBK-217F
APPENDIX B: VHSICIVHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
jylFTAl FAll URF RATF EQUATION
2
Total Chip Area (incm )
.88 for Custom and LogicDevice;, 1,12 for Memory and Gate Arrays
2
-21 cm
2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
X0
Metal Defect Density (If unknown use
(-) where X0 = 2 pm and Xs is the feature size of
XS
the device)
2
1 DefecVcm
Temperature Acceleration Factor
Effective Screening Time (in 106 hrs.)

6 .
A(atScreeningTemp. (in OK)) (ActualScreeningTime (in 10hrs))
TMET
3 8 8 (Metal Type)
(QML) (in lo6 hrs.)
J2 A
TMET
(QML) = . 2 if on QML, .5 if not.
Metal Type = 1 for AI, 37.5 for AI-CU or for Al-Si-Cu
The mean absolute value of Metal Current Density

(in 1O6 Amps/cm2)
sigma obtained from test data
on electromigration failures from the same or a similar
process. If this data isnot available usedMET
= 1.
time (in lo6 hrs.)

MIL-HDBK-217F RE m 9 9 9 9 9 7 00 0 7 0 8 8 8 8 m
I MIL-HDBK-217F
HOT CARqlFR F M URF RATF FQUATION
(QML) = 2 if on QML, .5 if not

o
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
. .O39
8.61 7x1O'5
(1-
TJ
k)] (where TJ = T ~ eJ$
+ (in OK))
Id = DrainCurrentatOperatingTemperature. If unknownuse Id = 3.5 e -.O0157 TJ (in O K ) ( m ~ )
'sub = SubstrateCurrentatOperatingTemperature. If unknownuse

-0058 e -*o0689TJ (in OK) (mA)
'sub =
%c = sigmaderivedfromtestdata, if not availableuse 1.
t0 = (at
Screening
Temp.(in OK)) * (Test
Duration in lo6 hours)
-.O028 to -.O028 t
.hcoN = .O00022 e e
ATCON
10 = Effective
Screening
Time
(at screening junction temperature

(in O K ) ) (actual screening timein lo6 hrs.)
= ATcon
= time (in lo6 hrs.)
B-4

~-
MIL-HDBK-217F RE m 9999970 0070889 T
MIL-HDBK-217F
APPENDIX B: VHSlCNHSlC-LIKE AND VLSl CMOS (DETAILEDMODEL)
PACKAGF FAILURF RATF F-QUATION
xPAC = (.O024 + 1.85 X 10-5(#Pins)) ZE nQ "PT + %H

xE = See
Section 5.10
ZQ = See Section 5.10
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Package Type Factor(llpT)
Type I Package I =PT I

DIP 1.o
Pin Grid Array' 2.2 -
Chip Carrier (Surface Mount Technology) 4.7
Package Hermeticity Factor
O for Hermetic Packages

I .
-exp
'399 H; [
tapH
%( ln(t) - In(t50pH)) 1' forplasticpackages
Ambient Temp. (in OK)
(WRH) e
[
5230 (k
- e)]
+ (1-DC)(RH) whereTJ =Tc
(for example,for 50% Relative Humidity, use RH= 50)
+ eJCP (in OK)
.74
time (in lo6 hrs.)

. . ' 1 . .
. . i
MIL-HDBK-217F RE m 9999970 0070890 b W ,
MIL-HDBK-217F
FOS/FSD FA11 URF RATF FQUATION
-.O002 VTH
-ln (1 - .O0057 e
kOS = ,00876
. VTH = ESD Threshold of the device using a100 pF, 1500 ohm discharge model
= Temperature Acceleration Factor
= exp[ -.423
where TJ = Tc + eJ$ (in O K )
to = EffectiveScreeningTime
= ATMls (at Scleening Temp, (in OK)) * Actual Screening Time(in lo6 hours)
t = time (in lo6 hrs.)
6-6
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---

. .. . .. .. . ., . .. . . . . ' . .
MIL-HDBK-217F RE = 9999970 c1070891 B W
MIL-HDBK-217F
APPENDIX C : BIBLIOGRAPHY
z
r
.
Publications listed with "AD" numbers may
be obtained from:
i National Technical Information Service
5285 Port Royal Road
Springfield, VA22151
(703) 487-4650
U.S. Defense Contractors may obtain copies from:
Defense Technical Information Center
-
CameronStation FDA,Bldg. 5 '
Alexandria, VA 22304-61 45
(703) 274-7633
"L": These documents arein a
Documents with AD number prefix with the letter "B" or with the suffix
"Limited Distribution" category. Contact the Defense Technical Information Center for ordering
procedures.
Copies of MIL-STDS's, MIL-HDBKs, and specifications are available from:
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Standardization Document Order Desk
700 Robins Ave.
Building 4, Section D
Philadelphia, PA 191 11-5094
(215) 697-2667
The year of publication of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC))
documents is part of the RADC (or RL) number; e.g., RADC-TR-88-97 was publishedin 1988.
1 . "Laser Reliability Prediction," RADC-TR-75-21 O, ADA016437.
2. "Reliability Model for Miniature Blower Motors Per MIL-8-23071 B," RADC-TR-75-178, AD A013735.
3. "High Power Microwave Tube Reliability Study," FAA-RD-76-172, AD A003361 2.
4."ElectricMotorReliabilityModel,"RADC-TR-77-408, ADA050179.
5. ' "Development of Nonelectronic Part Cyclic Failure Rates," RADC-Tk-77-417, AD A050678.
This study developed new failure rate models for relays, switches, and connectors.
6. "Passive Device Failure Rate Models for MIL-HDBK-2178," RADC-TR-77-432, AD A050180.
This study developed new failure rate models for resistors, capacitors and inductive devices.
7. "Quantification of Printed Circuit Board Connector Reliability," RADC-TR-77-433, AD A049980.
Y
8. "CrimpConnectionReliability,"RADC-TR-78-15,ADA050505
P. 9. "LSI/Microprocessor
Reliability
Prediction
Model
Development,"
RADC-TR-79-97,
AD
AO689 li.
1O . "A Redundancy Notebook," RADC-TR-77-287, AD A050837.
11. "Revision of Environmental Factors for MIL-HDBK-2178," RADC-TR-80-299, AD A091837.
c-1

I
MIL-HDBK-ZL7F RE 9999970 0070892 T D
MIL-HDBK-217F
APPENDIX C: BIBLIOGRAPHY
12. "Traveling Wave Tube Failure Rates," RADC-TR-80-288, AD A096055.
13. "Reliability Prediction Modeling of New Devices," RADC-TR-80-237,AD A090029.

This study-developed failure rate
models for magnetic bubble memories and charge-coupled
memories.
14. "Failure Rates for Fiber Optic Assemblies," RADC-TR-80-322, AD A09231

5.
15. "Printed Wiring Assembly and Interconnection Reliability," RADC-TR-81-318, ADA l 11214.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
for printed wiring assemblies, solderless wrap

This study developed failure rate models
assemblies, wrapped and soldered assemblies and discrete wiring assemblies with
electroless deposited plated through holes.
16. "Avionic Environmental Factors for MIL-HDBK-217," RADC-TR-81-374, AD B064430L.
17. "RADC Thermal Guide for Reliability Engineers," RADC-TR-82-172, A
ADl 18839.
18. "Reliability Modelingof Critical Electronic Devices," RADC-TR-83-108, AD
A l 35705.
This report developed failurerate prediction procedures for magnetrons, vidicions, cathode
ray tubes, semiconductor lasers, helium-cadmium lasers, helium-neon lasers, Nd: YAG lasers,
electronic filters, solid state relays, time delay relays (electronic hybrid), circuit breakers, LC.
Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps,
neon glow lamps and surface acoustic wave devices.
19. "Impact of Nonoperating Periodson Equipment Reliability," RADC-TR-85-91, AD A l 58843.
This study developed failure rate models for nonoperating periods.
20. "RADC Nonelectronic Reliability Notebook," RADC-TR-85-194, ADA l 63900.
This report contains failure rate data
on mechanical and electromechanical parts.
21 a "Reliability Prediction for Spacecraft," RADC-TR-85-229, AD A149551.
This study.investigated the reliability performance histories
of 300 Satellite vehicles and the
is
basisfor the halvingof all model nEfactors for MIL-HDBK-217Eto MIL-HDKBPl7E, Notice 1.
22. "Surface Mount Technology: A Reliability Review," 1986, Available from Reliability Analysis Center,
PO Box 4700, Rome, NY 13440-8200, 800-526-4802.
23. "Thermal Resistances of Joint Army Navy (JAN) Certified Microcircuit Packages," RADC-TR-86-97,
AD B108417.
24. "Large Scale Memory Error Detection and Correction," RADC-TR-87-92, AD

B117765L.
This study developed models to calculate memory system reliability for memories
incorporating error detecting and correcting codes. For a summary of the study see 1989
IEEE Reliability and Maintainability Symposium Proceedings, page 197, "AccountingSoft for
Errors in Memory Reliability Prediction."
25. "Reliability Analysisof a Surface Mounted Package Using Finite Element Simulation," RADC-TR-87-
177, AD A189488.
c-2

MIL-HDBK-237F CHG N O T I C E 2 m 9 9 9 9 9 7 0 0397093 920
MIL-HDBK-217F
NOTICE 2
26. "VHSICImpact on System Reliability," RADC-TR-88-13,AD8122629.
27. "Reliability Assessment of Surface Mount Technology," RADC-TR-88-72, AD A193759.
28."ReliabilityPredictionModels for Discrete SemiconductorDevices," RADC-TR-88-97, AD

A200529.
This study developed new failure rate prediction models for GaAs Power FETS, Transient
Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator Diodes.
29. "Impact of FiberOptics on System Reliability and Maintainability,"RADC-TR-88-124, AD

A201 946.
30. "VHSICNHSIC Like Reliability PredictionModeling,"RADC-TR-89-171,ADA214601.

,
This study provides the basis for the VHSIC model appearing in MIL-HDBK-217F, Section
5.
31. "Reliability Assessment Using Finite Element Techniques," RADC-TR-89-281 , AD A216907.
This study addresses surface mounted solder interconnections and microwire board's plated-
through-hole (PTH) connections. The report givesadetailedaccountofthefactors to be
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32. "Reliability Analysis/Assessment of Advanced Technologies," RADC-TR-90-72, ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble
Memories) appearing in MIL-HDBK-217F, Section 5.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
33. "Improved Reliability PredictionModel for Field-AccessMagneticBubbleDevices,"AFWAL-TR-
81 -1052.
34. "Reliability/Design ThermalApplications,"MIL-HDBK-251
35. "NASAPartsApplicationHandbook,"MIL-HDBK-978-B(NASA).
This handbook is a five volume series which discusses afull range of electrical, electronic and
electromechanical component parts. It provides extensive detailed technical information for
eachcomponent part such as: definitions, construction details, operating characteristics,
derating,failuremechanisms,screeningtechniques,standard parts, environmental
considerations, and circuit application.
36. "NonelectronicParts Reliability Data1991 ," NPRD-91.

Thisreportcontains fieldfailureratedataon a variety of electrical,mechanical,
electromechanicalandmicrowavepartsandassemblies(1400 different part types). It is
available fromtheReliability AnalysisCenter,POBox4700,Rome, NY 13440-8200,
Phone: (315) 337-0900.
37. "Reliability Assessment of Critical ElectronicComponents,"RL-TR-92-197,AD-A256996.

This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2,
for the followingdevice categories: resistors, capacitors, transformers,coils, motors,
relays, switches, circuit breakers,connectors,printed circuitboardsandsurface mount
technology.
page
Supersedes C-3of Revision F c-3
vIL-HDBK-217F CHG NOTICE 2 M 9 7 9 7 9 7 0 0397092 8b7 M
MIL-HDBK-217F
NOTICE 2
38. "Handbook of Reliability Prediction ProceduresforMechanicalEquipment,"NSWC-94/L07.

ThisHandbookincludes a methodology for nineteenbasicmechanicalcomponentsfor
evaluating a design for R&M that considers the material properties, operating environment
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare
Center, Bethesda,MD20084-5000,Phone(301)227-1694.

Navy - EC
Air Force - 17 ProjectNo.RELI-O074
Review Activities:
Army - MI, AV, ER
Navy - SH, AS, OS
Air Force - 11, 13, 15, 19, 99
User Activities:
-
Army AT, ME, GL
Navy - CG, MC, YD, TD
Air Force - 85
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
c -4 Supersedes page C-4 of Revision F


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MIL-HDBK-ZLi’F CHG N O T I C E 2 7777770 OL770Lb L 4 T

INOT MEASUREMENT SENSITIVE1 ~~~ ________ ~~~

THIS HANDBOOK IS FOR GUIDANCE ONLY DO NOT -

DISTRIBUTION STATEMENTA: Approved for public release: distribution unlimited.

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

NOTICE OF CHANGE NOT MEASUREMENT

To all holders of MIL-HDBK-217F

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

3. Holders of MIL-HDBK-217F will verifythatpagechanges and additions indicatedhavebeen

Custodians: Preparing Activity:

Army - AT, ME, GL

NOTICE OF CHANGE NOT MEASUREMENT

To all holders of MIL-HDBK-217F

New Page(s) Date Superseded Page(s) Date

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

MIL-HDBK-2L7F N O T I C E L R E 9399970 O076089 8

2. Retainthe pages of this noticeandinsertbeforetheTable of Contents.

Custodians: Preparing Activity:

RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT

1. This standardization handbook was developed by the Department of Defense

2. Everyefforthas been made toreflectthelatestinformationonreliability

3. Beneficial comments (recommendations,additions,deletions)and any

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

SECTION 4: RELIABILITY ANALYSIS EVALUATION ................................................... 4-1

SECTION 5: MICROCIRCUITS. INTRODUCTION ........................................................... 5-1

SECTION 6: DISCRETE SEMICONDUCTORS

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

SECTION 10: CAPACITORS

SECTION 11 : INDUCTIVE DEVICES

SECTION 12: ROTATING DEVICES

SECTION 13: RELAYS

SECTION 14: SWITCHES

SECTION 15: CONNECTORS

SECTION 16: INTERCONNECTION ASSEMBLIES

SECTION 17: CONNECTIONS

SECTION 18: METERS

SECTION 19: QUARTZ

SECTION 20: LAMPS

21 .1 Electronic Filters. Non-Tunable................................................................................ 21-1

APPENDIX B: VHSICNHSIC-LIKE AND VLSl CMOS (DETAILED MODEL) .............. B-1

Table 3-1: Partswith Multi-Level QualitySpecifications ........................................................ 3-3

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

MIL-HDBK-217F,Notice 2 provides thefollowingchangesbasedupon a recentlycompleted

Updated failure ratemodelsfortransformers,coils,motors,relays,switches,circuitbreakers,

9 ArevisedTravelingWaveTubemodelbasedupondatasuppliedby the ElectronicIndustries

RevisedtheFast RecoveryPower Rectifierbasefailurerate downward basedon a

2.0 MIL-HDBK-217F, Notice1, (10 July 1992) was issued to correctminortypographical

3.O MIL-HDBK-217F, (base document), (2 December 1991) provided

Monolithic Bipolar Digital and Linear Gate/Logic Array Devices

The 2 December1991 revision provided new prediction modelsfor bipolar andMOS

microcircuitswith gate countsupto 60,000, linearmicrocircuitswith up to 3000

2. A newmodel for Very High Speed IntegratedCircuits(VHSICNHSICLike) andVery

3. The reformatting of the entire handbook to make it easier to use.

4. A reduction in the number of environmental factors (XE) from 27 to 14.

5. A revised failure rate model for Network Resistors.

6. Revised models for TWTsand Klystronsbased on datasupplied by theElectronic

1.1 Purpose Thishandbook -

Document provided by IHS. Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004

OFFICE OF THE ASSISTANT SECRmARY OF DEFENSE

INOT MEASUREMENT SENSITIVE1 ~ ________ ~