STK0760F

Semiconductor
Advanced Power MOSFET

SWITCHING REGULATOR APPLICATIONS

Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=12pF(Typ.)
• Low gate charge : Qg=28nC(Typ.)
• Low RDS(on) :RDS(on)=1.2Ω(Max.)
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Ordering Information
Type NO. Marking Package Code

STK0760F STK0760 TO-220F-3L

Outline Dimensions unit : mm

Φ3.05~3.35
9.80~10.20
2.60~3.00
15.40~15.80

12.20~12.60

9.10~9.30

3.46 Typ.
12.40~13.00

1.07 Min.
0.90 Max.
0.60 Max.

2.54 Typ. 2.54 Typ.

1 2 3
0.60 Max.

PIN Connections
2.70 Max.
4.70 Max.

1. Gate
2. Drain
3. Source

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Absolute maximum ratings (Tc=25°C)

Characteristic Symbol Rating Unit
Drain-source voltage VDSS 600 V
Gate-source voltage VGSS ±30 V
(Tc=25℃) 7 A
Drain current (DC) ID
(Tc=100℃) 3.2 A
*
Drain current (Pulsed) IDM 28 A
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Drain power dissipation PD 30 W
Avalanche current (Single) ② IAS 7 A
Single pulsed avalanche energy ② EAS 230 mJ
Avalanche current (Repetitive) ① IAR 7 A

Repetitive avalanche energy ① EAR 7.5 mJ

Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
* Limited by maximum junction temperature

Characteristic Symbol Typ. Max Unit

Thermal Junction-case Rth(J-C) - 4.16
℃/W
resistance Junction-ambient Rth(J-a) - 62.5

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Electrical Characteristics (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 600 - - V
Gate threshold voltage VGS(th) ID=250µA, VDS= VGS 2.0 - 4.0 V
Drain-source cut-off current IDSS VDS=600V, VGS=0V - - 1 µA
Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA
Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=3.5A - 1.0 1.2 Ω
Forward transfer conductance ④ gfs VDS=10V, ID=3.5A - 7.3 - S
Input capacitance
www.DataSheet4U.com Ciss - 950 1430
VGS=0V, VDS=25V,
Output capacitance Coss f=1MHz - 85 130 pF
Reverse transfer capacitance Crss - 12 18
Turn-on delay time td(on) - 16 -
VDD=300V, ID=7A
Rise time tr - 60 -
RG=25Ω ns
Turn-off delay time td(off) ③④ - 80 -
Fall time tf - 65 -
Total gate charge Qg - 28 42
VDS=300V, VGS=10V
Gate-source charge Qgs ID=7A - 5.5 8.3
nC
Gate-drain charge Qgd ③④ - 11 17

Source-Drain Diode Ratings and Characteristics (Tc=25°C)

Characteristic Symbol Test Condition Min Typ Max Unit
Source current IS Integral reverse diode - - 7
A
Source current (Pulsed) ① ISM in the MOSFET - - 28
Forward voltage ④ VSD VGS=0V, IS=7A - - 1.4 V
Reverse recovery time trr Is=7A, VGS=0 - 365 - ns
Reverse recovery charge Qrr diS/dt=100A/us - 4.23 - uC

Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=9.8mH, IAS=7A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature

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Electrical Characteristic Curves

Fig. 1 ID - VDS Fig. 2 ID - VGS

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Fig. 3 RDS(on) - ID Fig. 4 IS - VSD

Fig. 5 Capacitance - VDS Fig. 6 VGS - QG

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Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ

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C C

Fig. 9 ID - TC
Fig. 10 Safe Operating Area

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Fig. 11 Gate Charge Test Circuit & Waveform

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Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 EAS Test Circuit & Waveform

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Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

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The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

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