STB60NF10 STB60NF10-1 - STP60NF10: N-Channel 100V - 0.019 - 80A - TO-220 - D Pak - I PAK Stripfet™ Ii Power Mosfet
STB60NF10 STB60NF10-1 - STP60NF10: N-Channel 100V - 0.019 - 80A - TO-220 - D Pak - I PAK Stripfet™ Ii Power Mosfet
STB60NF10 STB60NF10-1 - STP60NF10: N-Channel 100V - 0.019 - 80A - TO-220 - D Pak - I PAK Stripfet™ Ii Power Mosfet
STB60NF10-1 - STP60NF10
N-channel 100V - 0.019Ω - 80A - TO-220 - D2PAK - I2PAK
STripFET™ II Power MOSFET
General features
VDSS
Type RDS(on) ID
(@Tjmax)
3
1 3
STB60NF10 100V <0.023Ω 80A 1
2
Description
This Power MOSFET series realized with
Internal schematic diagram
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STB60NF10T4 B60NF10 D²PAK Tape & reel
STB60NF10-1 B60NF10 I²PAK Tube
STP60NF10 P60NF10 TO-220 Tube
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STB60NF10 - STB60NF10 -1 - STP60NF10 Electrical ratings
1 Electrical ratings
3/15
Electrical characteristics STB60NF10 - STB60NF10 -1 - STP60NF10
2 Electrical characteristics
Drain-source breakdown
V(BR)DSS ID = 250µA, VGS= 0 100 V
voltage
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
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STB60NF10 - STB60NF10 -1 - STP60NF10 Electrical characteristics
ISD = 80A, 92 ns
trr Reverse recovery time
di/dt = 100A/µs, 340 nC
Qrr Reverse recovery charge
VDD = 25V, TJ = 150°C 7.4 A
IRRM Reverse recovery current
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
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Electrical characteristics STB60NF10 - STB60NF10 -1 - STP60NF10
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STB60NF10 - STB60NF10 -1 - STP60NF10 Electrical characteristics
Figure 11. Source-drain diode forward Figure 12. Normalized BVDSS vs temperature
characteristics
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Test circuit STB60NF10 - STB60NF10 -1 - STP60NF10
3 Test circuit
Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test
switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
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STB60NF10 - STB60NF10 -1 - STP60NF10 Package mechanical data
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Package mechanical data STB60NF10 - STB60NF10 -1 - STP60NF10
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
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STB60NF10 - STB60NF10 -1 - STP60NF10 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
L 13 14 0.511 0.551
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Package mechanical data STB60NF10 - STB60NF10 -1 - STP60NF10
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
R 0.4 0.015
V2 0º 4º
3
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STB60NF10 - STB60NF10 -1 - STP60NF10 Packaging mechanical data
13/15
Revision history STB60NF10 - STB60NF10 -1 - STP60NF10
6 Revision history
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STB60NF10 - STB60NF10 -1 - STP60NF10
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