STP80NF06 - STB80NF06

STW80NF06
N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247
STripFET II™ Power MOSFET

Features
Type VDSS RDS(on) ID
STB80NF06 60V <0.008Ω 80A
3
STP80NF06 60V <0.008Ω 80A 2
1
STW80NF06 60V <0.008Ω 80A TO-220
TO-247
■ 100% avalanche tested
■ Low threshold drive
3
1
Description
D²PAK
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting Internal schematic diagram
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STB80NF06T4 B80NF06 D²PAK Tape & reel
STP80NF06 P80NF06 TO-220 Tube
STW80NF06 W80NF06 TO-247 Tube

May 2007 Rev 5 1/14

www.st.com 14
Contents STP80NF06 - STB80NF06 - STW80NF06

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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STP80NF06 - STB80NF06 - STW80NF06 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (vgs = 0) 60 V

VGS Gate- source voltage ±20 V
(1)
ID Drain current (continuous) at TC = 25°C 80 A
ID Drain current (continuous) at TC = 100°C 80 A
(2)
IDM Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25°C 300 W
Derating factor 2 W/°C
EAS (3) Single pulse avalanche energy 870 mJ
Tstg Storage temperature – 65 to 175
°C
Tj Max. operating junction temperature 175

1. Current limited by wire bonding

2. Pulse width limited by safe operating area
3. Starting Tj= 25°C, ID= 40A, VDD=40V

Table 2. Thermal data

Rthj-case Thermal resistance junction-case Max 0.5 °C/W
Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

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Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 250 µA, VGS = 0 60 V
Breakdown voltage
VDS = Max rating 1 µA
Zero gate voltage
IDSS VDS=Max rating,
Drain current (VGS = 0) 10 µA
TC=125°C
Gate-body leakage
IGSS VGS = ±20V ±100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
Static drain-source on
RDS(on) VGS = 10V, ID = 40A 0.0065 0.008 Ω
resistance

Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
gfs Forward transconductance VDS = 2.5V, ID=18A 20 S
Ciss Input capacitance 3850 pF
Coss Output capacitance VDS = 25V, f = 1 MHz, 800 pF
VGS = 0
Reverse transfer
Crss 250 pF
capacitance
Qg Total gate charge 115 150 nC
VDD = 80V, ID = 80A,
Qgs Gate-source charge 24 nC
VGS = 10V
Qgd Gate-drain charge 46 nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

VDD = 27V, ID = 40A

td(on) Turn-on delay time 25 ns
RG = 4.7Ω VGS = 10V
tr Rise time 85 ns
(see Figure 13)
VDD = 27V, ID = 40A, ns
td(off) Turn-off-delay time 70
RG = 4.7Ω, VGS = 10V ns
tf Fall time 25
(see Figure 13)
td(off) Off-voltage Rise Time Vclamp =44V, ID =80A 85 ns
tf Fall Time RG = 4.7Ω, VGS = 10V 75 ns
tc Cross-over Time (see Figure 15) 110 ns

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STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

ISD Source-drain current 80 A

(1)
ISDM Source-drain current (pulsed) 320 A
(2)
VSD Forward on voltage ISD = 80A, VGS = 0 1.5 V
ISD = 80A, VDD = 50V
trr Reverse recovery time 80 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 250 nC
Tj = 150°C
IRRM Reverse recovery current 6.4 A
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

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Electrical characteristics STP80NF06 - STB80NF06 - STW80NF06

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characteristics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

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STP80NF06 - STB80NF06 - STW80NF06 Electrical characteristics

Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.
vs. temperature temperature

Figure 11. Source-drain diode forward Figure 12. Normalized breakdown voltage vs.
characteristics tj

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Test circuit STP80NF06 - STB80NF06 - STW80NF06

3 Test circuit

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

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STP80NF06 - STB80NF06 - STW80NF06 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com

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Package mechanical data STP80NF06 - STB80NF06 - STW80NF06

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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STP80NF06 - STB80NF06 - STW80NF06 Package mechanical data

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º
3

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Package mechanical data STP80NF06 - STB80NF06 - STW80NF06

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216

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STP80NF06 - STB80NF06 - STW80NF06 Revision history

5 Revision history

Table 7. Revision history

Date Revision Changes

09-Sep-2004 1 Complete version

The word "STripFET" in the description title on the web was been
21-Jun-2005 2
corrected
17-Aug-2006 3 The document has been reformatted
31-Jan-2007 4 Typo mistake on Table 1.
03-May-2007 5 RDS(on) Max value has been changed

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 STP80NF06 - STB80NF06 - STW80NF06

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