2N7002H

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID max  N-Channel MOSFET
V(BR)DSS RDS(ON) max
TA = +25°C  Low On-Resistance
 Low Gate Threshold Voltage
60V 7.5Ω @ VGS = 5V 210mA
 Low Input Capacitance
 Fast Switching Speed
 Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Description and Applications Mechanical Data

This MOSFET is designed to minimize the on-state resistance  Case: SOT23
(RDS(on)) and yet maintain superior switching performance, making it  Case Material: Molded Plastic, “Green” Molding Compound.
ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Motor Control  Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
 Power Management Functions Solderable per MIL-STD-202, Method 208
 Terminal Connections: See Diagram
 Weight: 0.008 grams (Approximate)

SOT23
D
G

S G S

Top View Equivalent Circuit Top View

Ordering Information (Note 4)

Part Number Case Packaging
2N7002H-7 SOT23 3,000/Tape & Reel
2N7002H-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

H7H = Product Type Marking Code

YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
YM

H7H M = Month (ex: 9 = September)

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020 2021
Code B C D E F G H I

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
2N7002H 1 of 6 July 2015
Document number: DS38025 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 2N7002H

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage Continuous ±20
VGSS V
Pulsed ±40
TA = +25°C 170
Steady
Continuous Drain Current (Note 5) VGS = 10V TA = +85°C ID 120 mA
State
TA = +100°C 105
TA = +25°C 210
Steady
Continuous Drain Current (Note 6) VGS = 10V TA = +85°C ID 150 mA
State
TA = +100°C 135
Maximum Body Diode Forward Current (Note 6) Continuous 0.5
IS A
Pulsed 2
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 500 mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
(Note 5) 370
Total Power Dissipation PD mW
(Note 6) 510
(Note 5) 341
Thermal Resistance, Junction to Ambient RJA °C/W
(Note 6) 249
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60   V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current IDSS   1.0 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) 2.0  3.0 V VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance RDS (ON)  3.0 7.5 Ω VGS = 5.0V, ID = 0.05A
Diode Forward Voltage VSD  0.78 1.5 V VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss  26  pF
VDS = 25V, VGS = 0V
Output Capacitance Coss  2.8  pF
f = 1.0MHz
Reverse Transfer Capacitance Crss  2.1  pF
Total Gate Charge (VGS = 4.5V) Qg  352 
Gate-Source Charge Qgs  203  pC VDS = 10V, ID = 250mA
Gate-Drain Charge Qgd  123 
Turn-On Delay Time tD(on)  3.7 
VDD = 30V, ID = 0.2A,
Turn-On Rise Time tr  2.9 
ns RL = 150Ω, VGEN = 10V,
Turn-Off Delay Time tD(off)  8.4 
RGEN = 25Ω
Turn-Off Fall Time tf  4.7 
Body Diode Reverse Recovery Time trr - 9.3 - ns IS = 0.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 3.5 - nC IS = 0.5A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.

2N7002H 2 of 6 July 2015

Document number: DS38025 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 2N7002H
1.0 0.5

0.9 VGS = 10V

0.8 VGS = 8.0V 0.4 VDS = 5.0V

I D, DRAIN CURRENT (A)

VGS = 6.0V

ID , DRAIN CURRENT (A)

0.7

0.6 0.3
VGS = 5.0V
0.5

0.4 0.2
T A = 150C
0.3
VGS = 4.5V
T A = 85C
0.2 0.1 T A = 125C
VGS = 4.0V T A = 25C
VGS = 3.5V
0.1
TA = -55 C

0.0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 6 7 8
V DS, DRAIN -SOURCE VOLTAGE (V) V GS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics
10 10

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )

RD S(ON ), DRAIN-SOURCE ON-RESISTANCE ( )

9 9

8 8

7 7

6 6

5 5

4 4

3 VGS = 5.0V
3 I D = 50mA

2 2

1 1

0 0
0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 12 14 16 18 20
ID , DRAIN SOURCE CURRENT (A) V GS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs. Figure 4 Typical Drain-Source On-Resistance
Drain Current and Gate Voltage vs. Gate-Source Voltage
5 2.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

VGS = 5V
O N-RESI STANCE (NORMALIZED)

4 2
R DS(ON), DRAIN-SOURCE

VGS = 10 V
ID = 1 00 mA

3 T A = 150 C
1.5
T A = 125C

T A = 85C
2
1 VGS = 5V
T A = 25C I D = 50mA

T A = -55C
1
0.5

0
0 0.1 0.2 0.3 0.4 0
ID, DRAIN SOURCE CURRENT (A)
-50 -25 0 25 50 75 100 125 150
Figure 5 Typical On-Resistance vs. TJ, JUNCTION TEMPERATURE ( C)
Drain Current and Temperature Figure 6 On-Resistance Variation with Temperature

2N7002H 3 of 6 July 2015

Document number: DS38025 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 2N7002H

5 5
RD S(on), DRAIN-SOURCE ON-RESISTANCE ( )

V GS(TH), GATE THRESHOLD VOLTAGE (V)

4 4

I D = 250µA

3 VGS = 5V
3
I D = 50mA

2 2
ID = 1mA
VGS = 10V

1 I D = 100mA 1

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE ( C) TA, AMBIENT TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature Figure 8 Gate Threshold Variation vs. Ambient Temperature
0.5 100
f = 1MHz

CT , JUNCTION CAPACITANCE (pF)

C iss
0.4
I S, SOURCE CURRENT (A)

0.3 T A= 85°C

T A= 150°C
10

0.2 T A= 25C
Coss
T A= 125C

0.1 T A= -55C
Crss

0 1
0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40
VSD , SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance
10 10
RDS(on)
Limited PW = 100µs
VGS GATE THRESHOLD VOLTAGE (V)

8
1
ID, DRAIN CURRENT (A)

VDS = 10V
6 ID = 250mA

0.1
DC
4 PW = 10s
PW = 1s

T J(m ax) = 150°C PW = 100ms

0.01 PW = 10ms
2 T A = 25°C
V GS = 10V PW = 1ms
Single Pulse
DUT on 1 * MRP Board
0 0.001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 10 100
Qg, TOTAL GATE CHARGE (nC) VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area

2N7002H 4 of 6 July 2015

Document number: DS38025 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 2N7002H
1
D = 0.9
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5

D = 0.3

0.1
D = 0.1

D = 0.05

D = 0.02

0.01
D = 0.01

D = 0.005 RJA(t) = r(t) * R JA

RJA = 346°C/W
Single Pulse Duty Cycle, D = t1/ t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIMES (sec)
Figure 15 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

All 7°
H
GAUGE PLANE
SOT23
0.25 Dim Min Max Typ
J A 0.37 0.51 0.40
K1 K
B 1.20 1.40 1.30
C 2.30 2.50 2.40
a
D 0.89 1.03 0.915
A M
F 0.45 0.60 0.535
L L1 G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
C B K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
D a 8°
All Dimensions in mm
F G

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y
Dimensions Value (in mm)
Z
C
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35

X E

2N7002H 5 of 6 July 2015

Document number: DS38025 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 2N7002H

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2015, Diodes Incorporated

www.diodes.com

2N7002H 6 of 6 July 2015

Document number: DS38025 Rev. 1 - 2 www.diodes.com © Diodes Incorporated