DMN6040SSD

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

• Low Input Capacitance
ID
V(BR)DSS RDS(on) max • Low On-Resistance
TA = +25°C
ADVANCE INFORMATION

• Fast Switching Speed

40mΩ @ VGS = 10V 5.0A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
60V • Halogen and Antimony Free. “Green” Device (Note 3)
55mΩ @ VGS = 4.5V 4.4A • Qualified to AEC-Q101 Standards for High Reliability

Description and Applications Mechanical Data

This new generation MOSFET is designed to minimize the on-state • Case: SO-8
resistance (RDS(on)) and yet maintain superior switching performance, • Case Material: Molded Plastic, “Green” Molding Compound.
making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• DC-DC Converters • Terminal Connections: See Diagram
• Power Management Functions • Terminals: Finish – Tin Finish annealed over Copper leadframe.
• Backlighting Solderable per MIL-STD-202, Method 208
• Weight: 0.074 grams (approximate)

S1 D1 D1 D2
G1 D1

S2 D2 G1 G2
G2 D2
S1 S2
Top View Top View
Pin Configuration Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging
DMN6040SSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

8 5

= Manufacturer’s Marking
N6040SD = Product Type Marking Code
N 6040 SD YYWW = Date Code Marking
YY or YY = Year (ex: 14= 2014)
YY WW WW = Week (01 - 53)

1 4

DMN6040SSD 1 of 6 August 2014

Document number: DS35673 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMN6040SSD

Maximum Ratings (@TA = +25°C unless otherwise specified)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
ADVANCE INFORMATION

Steady TA = +25°C 5.0

ID A
State TA = +70°C 4.1
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C 6.6
t<10s ID A
TA = +70°C 5.3
Maximum Body Diode Forward Current (Note 6) IS 2.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 30 A
Avalanche Current (Note 7) L = 0.1mH IAS 14.2 A
Avalanche Energy (Note 7) L = 0.1mH EAS 10 mJ

Thermal Characteristics (@TA = +25°C unless otherwise specified)

Characteristic Symbol Value Units
TA = +25°C 1.3
Total Power Dissipation (Note 5) PD W
TA = +70°C 0.8
Steady state 102
Thermal Resistance, Junction to Ambient (Note 5) RθJA °C/W
t<10s 61
TA = +25°C 1.7
Total Power Dissipation (Note 6) PD W
TA = +70°C 1.1
Steady state 75
Thermal Resistance, Junction to Ambient (Note 6) RθJA
t<10s 50 °C/W
Thermal Resistance, Junction to Case (Note 6) RθJC 14.5
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@TA = 25°C unless otherwise specified)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS 60   V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS   100 nA VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS(th) 1  3 V VDS = VGS, ID = 250µA
 30 40 VGS = 10V, ID = 4.5A
Static Drain-Source On-Resistance RDS (ON) mΩ
 35 55 VGS = 4.5V, ID = 3.5A
Forward Transfer Admittance |Yfs|  4.5  S VDS = 10V, ID = 4.3A
Diode Forward Voltage VSD  0.7 1.2 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss  1287 
VDS = 25V, VGS = 0V
Output Capacitance Coss  57  pF
f = 1.0MHz
Reverse Transfer Capacitance Crss  44 
Gate Resistance RG  1.2  Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V) Qg  22.4 
Total Gate Charge (VGS = 4.5V) Qg  10.4 
nC VDS = 30V, ID = 4.3A
Gate-Source Charge Qgs  4.9 
Gate-Drain Charge Qgd  3.0 
Turn-On Delay Time tD(on)  6.6 
Turn-On Rise Time tr  8.1  VGS = 10V, VDD = 30V, RG = 6Ω,
nS
Turn-Off Delay Time tD(off)  20.1  ID = 4.3A
Turn-Off Fall Time tf  4.0 
Body Diode Reverse Recovery Time trr  18  nS IS = 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr  11.9  nC IS = 4.3A, dI/dt = 100A/µs
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.

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Document number: DS35673 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
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20 20

VDS = 5.0V

16 16

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)
ADVANCE INFORMATION

12 12

8 8
TA = 150°C

TA = 125°C
4 TA = 85°C
4
TA = 25°C

TA = -55°C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE
Fig.1 Typical Output Characteristic Fig.2 Typical Transfer Characteristics

0.10 0.10

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω)

0.09

0.08 0.08

0.07

0.06 0.06

0.05 ID = 3.5A ID = 4.5A

VGS = 4.5V
0.04 0.04

0.03
VGS = 10V
0.02 0.02

0.01
0 0
0 4 8 12 16 20 0 1 2 3 4 5 6 7 8 9 10
ID, DRAIN-SOURCE CURRENT V GS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs.
Drain Current and Gate Voltage Drain Current and Gate Voltage

0.10 2.4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

0.09 VGS = 4.5V 2.2

VGS = 10V
ON-RESISTANCE (NORMALIZED)

2.0
0.08 TA = 150°C ID = 10A
1.8
RDS(ON), DRAIN-SOURCE

0.07
1.6
0.06 TA = 125°C
1.4 VGS = 4.5V
ID = 5A
0.05 TA = 85°C 1.2

0.04 1.0
TA = 25°C 0.8
0.03
0.6
0.02 TA = -55°C
0.4
0.01 0.2
0 0
0 4 8 12 16 20 50 -25 0 25 50 75 100 125 150
ID, DRAIN CURRENT TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 Typical On-Resistance vs. Fig. 6 On-Resistance Variation with Temperature
Drain Current and Temperature

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 DMN6040SSD

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.10 4.0

VGS(th), GATE THRESHOLD VOLTAGE (V)

3.5
0.08
ADVANCE INFORMATION

3.0

VGS = 4.5V 2.5

0.06
ID = 500mA
ID = 1mA
2.0

0.04
1.5 ID = 250µA
VGS = 2.5V
ID = 200mA
1.0
0.02
0.5

0 0
- 50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE ( °C)
Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient Temperature

20

CT, JUNCTION CAPACITANCE (pF)

16
IS, SOURCE CURRENT (V)

Ciss

12 TA = 25°C

8
Coss

4 Crss

f = 1MHz

0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30
VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance

100
VDS = 30V
VGS GATE THRESHOLD VOLTAGE (V)

ID = 4.3A

10
I D, DRAIN CURRENT (A)

DC
1
PW = 10s

PW = 1s
0.1 PW = 100ms

TJ (m ax ) = 150°C PW = 10ms

TA = 25°C PW = 1ms
0.01
V GS = 10V PW = 100µs
Single Pulse
DUT on 1 * MRP Board
0.001
0 5 10 15 20 25 0.1 1 10 100
Qg, TOTAL GATE CHARGE (nC)
V DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Gate Charge
Figure 12 SOA, Safe Operation Area

DMN6040SSD 4 of 6 August 2014

Document number: DS35673 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMN6040SSD

1
D = 0.9
r(t), TRANSIENT THERMAL RESISTANCE D = 0.7
D = 0.5
ADVANCE INFORMATION

D = 0.3

0.1
D = 0.1

D = 0.05

D = 0.02

0.01
D = 0.01
Rthja(t)=r(t) * Rthja
D = 0.005 Rthja=100C/W
Duty Cycle, D=t1 / t2
Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SO-8
0.254

E1 E Dim Min Max

Gauge Plane A - 1.75
A1 Seating Plane
L A1 0.10 0.20
A2 1.30 1.50
Detail ‘A’ A3 0.15 0.25
b 0.3 0.5
h 7°~9° D 4.85 4.95
45° E 5.90 6.10
Detail ‘A’ E1 3.85 3.95
A2 A A3
e 1.27 Typ
b
h - 0.35
e
L 0.62 0.82
D
θ 0° 8°
All Dimensions in mm

DMN6040SSD 5 of 6 August 2014

Document number: DS35673 Rev. 4 - 2 www.diodes.com © Diodes Incorporated
 DMN6040SSD

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

X
ADVANCE INFORMATION

Dimensions Value (in mm)

X 0.60
Y 1.55
C1 5.4
C1
C2 1.27
C2

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DMN6040SSD 6 of 6 August 2014

Document number: DS35673 Rev. 4 - 2 www.diodes.com © Diodes Incorporated