DMN66D0LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID • Dual N-Channel MOSFET
BVDSS RDS(on) Max
TA = +25°C • Low On-Resistance
6Ω @ VGS = 5V 90mA • Low Gate Threshold Voltage
60V
5Ω @ VGS = 10V 115mA
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate, 1KV (HBM)
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
facilities), please refer to the related automotive grade (Q-
suffix) part. A listing can be found at
https://www.diodes.com/products/automotive/automotive-
products/.
• This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
https://www.diodes.com/quality/product-definitions/
• An Automotive-Compliant Part is Available Under
Separate Datasheet (DMN66D0LDWQ)

Description and Applications Mechanical Data

This new generation MOSFET has been designed to minimize the • Case: SOT363 (Standard)
on-state resistance (RDS(on)) and yet maintain superior switching • Case Material: Molded Plastic. UL Flammability Classification
performance, making it ideal for high-efficiency power management Rating 94V-0
applications. • Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
• Load Switches (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)

SOT363 (Standard) D2 G1 S1

S2 G2 D1
ESD PROTECTED TO 1kV
Top View Top View
Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging
DMN66D0LDW-7 SOT363 (Standard) 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

DMN66D0LDW 1 of 6 August 2021

Document number: DS31232 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

Marking Information

MN1= Product Type Marking Code

MN1 YM YM = Date Code Marking
Y or Y = Year (ex: I = 2021)
YM MN1 M or M = Month (ex: 9 = September)

Date Code Key

Year 2007 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030
Code U …… I J K L M N O P R S
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

Maximum Ratings (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage (Note 5) Continuous VGSS ±20 V
Continuous 115
Drain Current (Note 5) Continuous @ +100°C ID 73 mA
Pulsed 800

Thermal Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
Total Power Dissipation 250 mW
PD
Derating above TA = +25°C (Note 5) 1.6 mW/°C
Thermal Resistance, Junction to Ambient RθJA 500 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 10µA
@ TC = +25°C 1.0
Zero Gate Voltage Drain Current IDSS   µA VDS = 60V, VGS = 0V
@ TC = +125°C 500
Gate-Body Leakage IGSS   ±5 µA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(th) 1.2  2.0 V VDS = VGS, ID = 250µA
@ TJ = +25°C 3.5 6 VGS = 5V, ID = 0.115A
Static Drain-Source On-Resistance RDS(on)  Ω
@ TJ = +125°C 3.0 5 VGS = 10V, ID = 0.115A
Forward Transconductance gFS 80   mS VDS = 10V, ID = 0.115A
Diode Forward Voltage VSD  0.8 1.2 V VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss  23  pF
Output Capacitance Coss  3.4  pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss  1.4  pF
Turn-On Delay Time tD(on)  10  ns VDD = 30V, ID = 0.115A, RL = 150Ω,
Turn-Off Delay Time tD(off)  33  ns VGEN = 10V, RGEN = 25Ω
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on www.diodes.com/package-outlines.html
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.

DMN66D0LDW 2 of 6 August 2021

Document number: DS31232 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

0.6 1

VDS = 5V
0.5 Pulsed

ID, DRAIN CURRENT (A)

0.4

0.3 0.1

0.2
TA = 150°C

0.1 TA = 85°C TA = 25°C

TA = -55°C

0 0.01
1 2 3 4 5
V GS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics

9 2.5

8
R DS(ON), STATIC DRAIN-SOURCE

2.0
7
ON-RESISTANCE (Ω)

6
1.5

4 VGS = 5V 1.0

3
VGS = 10V 0.5
2

1 0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

2.0 100

1.9
VGS(TH), GATE THRESHOLD VOLTAGE (V)

1.8 ID = 250µA
CT, CAPACITANCE (pF)

1.7
Ciss
1.6

1.5 10

1.4

1.3
Coss
1.2

1.1
Crss
1.0 1
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40
TA, AMBIENT TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Typical Total Capacitance

DMN66D0LDW 3 of 6 August 2021

Document number: DS31232 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

0.1
IS, SOURCE CURRENT (A)

TA = 150°C

TA = 125°C

0.01 TA = 85°C

0.001 TA = 25°C

TA = -55°C

0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

DMN66D0LDW 4 of 6 August 2021

Document number: DS31232 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363 (Standard)

E E1
SOT363 (Standard)
Dim Min Max Typ
A1 0.00 0.10 0.05
A2 0.80 1.00 0.90
b 0.10 0.35 0.225
F c 0.08 0.22 0.15
b D 1.80 2.20 2.00
E 2.00 2.45 2.225
E1 1.15 1.35 1.25
D
e -- -- 0.65
F 0.25 0.45 0.35
L 0.25 0.46 0.355
A2 a 0° 8° --
All Dimensions in mm
c a
e L
A1

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SOT363 (Standard)

Value
Dimensions
(in mm)
C 0.650
Y1 G G 1.300
X 0.420
Y 0.600
Y1 2.500
Y

DMN66D0LDW 5 of 6 August 2021

Document number: DS31232 Rev. 7 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

IMPORTANT NOTICE

1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and
liabilities.

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this document.

5. Diodes products are provided subject to Diodes’ Standard Terms and Conditions of Sale
(https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.

6. Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.

Copyright © 2021 Diodes Incorporated

www.diodes.com

DMN66D0LDW 6 of 6 August 2021

Document number: DS31232 Rev. 7 - 2 www.diodes.com © Diodes Incorporated