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Ultrahigh-Speed Switching Applications: Package Dimensions Features

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Ordering number:ENN6313

N-Channel Silicon MOSFET

2SK2911

Ultrahigh-Speed Switching Applications

Features Package Dimensions


· Low ON-resistance. unit:mm
· Ultrahigh-speed switching. 2091A
· 2.5V drive.
[2SK2911]

0.4

0.5
0.16
3

0 to 0.1

2.5
1.5
1 0.95 0.95 2

0.5
1.9
2.9

1.1
1 : Gate

0.8
2 : Source
3 : Drain
Specifications SANYO : CP

Absolute Maximum Ratings at Ta = 25˚C


Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 100 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID 0.25 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 1 A
Allowable Power Dissipation PD 0.25 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 100 V
Zero-Gate Voltage Drain Current IDSS VDS=100V, VGS=0 100 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=150mA 250 500 mS
RDS(on)1 ID=0.15A, VGS=4V 2.5 3.5 Ω
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=0.1A, VGS=2.5V 3.0 4.2 Ω
Marking : FK Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52501TS KT TA-2137 No.6313–1/4
2SK2911
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Input Capacitance Ciss VDS=20V, f=1MHz 50 pF
Output Capacitance Coss VDS=20V, f=1MHz 15 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 4 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time tr See specified Test Circuit 10 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 25 ns
Fall Time tf See specified Test Circuit 35 ns
Diode Forward Voltage VSD IS=250mA, VGS=0 0.8 1.2 V

Switching Time Test Circuit


VDD=50V
VIN
4V
0V ID=0.15A
VIN RL=333Ω
PW=10µs D VOUT
D.C.≤1%

2SK2911
P.G 50Ω
S

ID - VDS ID - VGS
0.30 0.50
VDS=10V
8.0V 6.0V 4.0V
0.45
V
0.25
2.5 0.40
V
Drain Current, ID – A

Drain Current, ID – A

0
0.20 1 0. 3.0V
0.35

0.30
VGS=1.5V
0.15 0.25
C

0.20
25°

0.10
°C

0.15
75

°C

0.10
25

0.05
=-

0.05
Ta

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage, VDS – V Gate-to-Source Voltage, VGS – V

| yf s | - I D R DS(on) - VGS
3 5.0
VDS=10V Ta=25°C
Forward Transfer Admittance, | yfs | – S

2
4.5
ID=0.15A
On-State Resistance, RDS(on) – mΩ

10
25°C 4.0
7 Ta=- 0.1A
5 25°C 3.5
75°C
3 3.0
Static Drain-to-Source

2
2.5

1.0 2.0
7
1.5
5

3 1.0

2
0.5

0.1 0
0.01 2 3 5 7 0.1 2 3 5 7 0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID – A Gate-to-Source Voltage, VGS – V

No.6313–2/4
2SK2911
R DS(on) - Ta I F - VSD
6 1.0
7 VGS= 0
5
5 3
On-State Resistance, RDS(on) – mΩ

Forward Current, IF – A
=4V
4 ,V GS 0.1
0. 1A 7
I D= =4V 5
,V GS
Static Drain-to-Source

3
15A
3
0.
I D= 2

2 0.01

25 °C
25°C
7

75°C
5

Ta=-
1 3
2

0 0.001
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Ambient Temperature, Ta – ˚C Diode Forward Voltage, VSD – V
Ciss,Coss,Crss - VDS SW Time - I D
1000 1000
7 f = 1MHz 7 VDD =50V
5 5 VGS=4V
tf

Switching Time, SW Time – ns


3 3
2 2
Ciss, Coss, Crss – pF

100 100
7 7
Ciss td (of
5 5 f)
3 3
2 2 td(on)
Coss
10 10 tr
7 7
5 5
Crss
3 3
2 2

1.0 1.0
0 5 10 15 20 25 30 7 0.01 2 3 5 7 0.1 2 3
Drain-to-Source Voltage, VDS – V Drain Current, ID – A
A S O PD - Ta
2 0.28
IDP=1A 10µs 100µs
M
Allowable Power Dissipation, PD – W

1.0 0.25
7 0.24
ou
nt
5 ed
1m

on
s

3 ID=0.25A ag
Drain Current, ID – A

10

0.20
2 las
m
s

se
0.1 po
D

0.16 xy
C

7
bo
op

5 ar
er

d
at

3 0.12 (1
io

0m
n

2 Operation in this area m


is limited by RDS(on). ×1
0.01 0.08 0 m
7 m
5 ×0
.8
3 Ta=25°C 0.04 m
m
2 Single pulse )
0.001
Mounted on a glass epoxy board (10mm×10mm×0.8mm)
0
0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 0 20 40 60 80 100 120 140 160
Drain-to-Source Voltage, VDS – V Ambient Temperature, Ta – ˚C

No.6313–3/4
2SK2911

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject to
change without notice.

PS No.6313–4/4

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