DMN66D0LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Mechanical Data

• Dual N-Channel MOSFET • Case: SOT363
• Low On-Resistance • Case Material: Molded Plastic. UL Flammability Classification
• Low Gate Threshold Voltage Rating 94V-0
• Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020
• Fast Switching Speed • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
NEW PRODUCT

• Small Surface Mount Package (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• ESD Protected Gate, 1KV (HBM) • Terminal Connections: See Diagram
• Lead Free/RoHS Compliant (Note 1) • Weight: 0.006 grams (approximate)
• Qualified to AEC-Q101 Standards for High Reliability

SOT363 D2 G1 S1

S2 G2 D1

ESD PROTECTED TO 1kV Top View Top View

Internal Schematic

Ordering Information (Note 2)

Part Number Case Packaging
DMN66D0LDW-7 SOT363 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. For packaging details, go to our website at http://www.diodes.com.

Marking Information

MN1 = Product Type Marking Code

MN1 YM YM = Date Code Marking
YM MN1 Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D

DMN66D0LDW 1 of 5 December 2011

Document number: DS31232 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
This datasheet has been downloaded from http://www.digchip.com at this page
 DMN66D0LDW

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage (Note 3) Continuous VGSS ±20 V
NEW PRODUCT

Drain Current (Note 3) Continuous 115

Continuous @ 100°C ID 73 mA
Pulsed 800

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Units
Total Power Dissipation 250 mW
PD
Derating above TA = 25°C (Note 3) 1.6 mW/°C
Thermal Resistance, Junction to Ambient RθJA 500 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C 1.0
IDSS ⎯ ⎯ µA VDS = 60V, VGS = 0V
@ TC = 125°C 500
Gate-Body Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(th) 1.2 ⎯ 2.0 V VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C 3.5 6 VGS = 5.0V, ID = 0.115A
RDS (ON) ⎯ Ω
@ TJ = 125°C 3.0 5 VGS = 10V, ID = 0.115A
Forward Transconductance gFS 80 VSD ⎯ mS VDS = 10V, ID = 0.115
Diode Forward Voltage VSD ⎯ 0.8 1.2 V VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 23 ⎯ pF
Output Capacitance Coss ⎯ 3.4 ⎯ pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 1.4 ⎯ pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns VDD = 30V, ID = 0.115A, RL = 150Ω,
Turn-Off Delay Time tD(OFF) ⎯ 33 ⎯ ns VGEN = 10V, RGEN = 25Ω
Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
4. Short duration pulse test used to minimize self-heating effect.

DMN66D0LDW 2 of 5 December 2011

Document number: DS31232 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

0.6 1

VDS = 5V
0.5 Pulsed

ID, DRAIN CURRENT (A)

0.4
NEW PRODUCT

0.3 0.1

0.2
TA = 150°C

0.1 T A = 85°C TA = 25°C

T A = -55°C

0 0.01
1 2 3 4 5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics

9 2.5

8
RDS(ON), STATIC DRAIN-SOURCE

2.0
7
ON-RESISTANCE (Ω)

6
1.5

4 VGS = 5V 1.0

3
VGS = 10V 0.5
2

1 0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

2.0 100

1.9
VGS(TH), GATE THRESHOLD VOLTAGE (V)

1.8 ID = 250µA
CT, CAPACITANCE (pF)

1.7
Ciss
1.6

1.5 10

1.4

1.3
Coss
1.2

1.1
Crss
1.0 1
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40
TA, AMBIENT TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Typical Total Capacitance

DMN66D0LDW 3 of 5 December 2011

Document number: DS31232 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

1
IS, SOURCE CURRENT (A)

0.1
TA = 150°C
NEW PRODUCT

T A = 125°C

0.01 TA = 85°C

0.001 TA = 25°C

TA = -55°C

0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

Package Outline Dimensions

SOT363
Dim Min Max
B C A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
H F 0.40 0.45
H 1.80 2.20
K M J 0 0.10
K 0.90 1.00
L 0.25 0.40
J
D F L M 0.10 0.22
α 0° 8°
All Dimensions in mm

Suggested Pad Layout

C2 C2
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
G C1
Z Y 0.6
C1 1.9
C2 0.65
Y

DMN66D0LDW 4 of 5 December 2011

Document number: DS31232 Rev. 5 - 2 www.diodes.com © Diodes Incorporated
 DMN66D0LDW

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

DMN66D0LDW 5 of 5 December 2011

Document number: DS31232 Rev. 5 - 2 www.diodes.com © Diodes Incorporated