A Product Line of

Diodes Incorporated

ZVP4424Z
240V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features Mechanical Data

• BVDSS > -240V • Case: SOT89
• RDS(on) ≤ 8.8Ω @ VGS = -3.5V • Case Material: Molded Plastic, “Green” Molding Compound.
• Low threshold and Fast switching UL Flammability Classification Rating 94V-0
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Moisture Sensitivity: Level 1 per J-STD-020
• Halogen and Antimony Free. “Green” Device (Note 3) • Terminals: Matte Tin Finish
• Qualified to AEC-Q101 Standards for High Reliability • Weight: 0.052 grams (approximate)
• PPAP capable (Note 4)

Application
• Electronic hook switches
• Telecoms and Battery powered equipment

SOT89

S
Top View Device symbol Pin-out Top

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
ZVP4424ZTA AEC-Q101 24P 7 12 1,000
ZVP4424ZQTA Automotive 24P 7 12 1,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.

Marking Information

24P 24P = Product type Marking Code

ZVP4424Z 1 of 6 December 2012

Document Number DS33410 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
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ZVP4424Z

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -240 V
Gate-Source Voltage VGSS ±40 V
Continuous Drain Current ID -200 mA
Pulsed Drain Current (Note 8) IDM -1.0 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
(Note 6) 1.5 W
Power Dissipation PD
(Note 7) 2.6 W
(Note 6) 83.3 °C/W
Thermal Resistance, Junction to Ambient RθJA
(Note 7) 47.4 °C/W
Thermal Resistance, Junction to Leads (Note 9) RθJL 3.64 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
8. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs – pulse width limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).

Thermal Characteristics

ZVP4424Z 2 of 6 December 2012

Document Number DS33410 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 A Product Line of
Diodes Incorporated

ZVP4424Z

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -240 ⎯ ⎯ V ID = -1mA, VGS = 0V
-10 μA VDS = -240V, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯
-100 μA VDS = -190V, VGS = 0V, TA = +125°C
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±40V, VDS = 0V
ON CHARACTERISTICS
On state Drain Current (Note 10) ID(on) -0.75 -1.0 ⎯ A VDS = -10V, VGS = -10V
Gate Threshold Voltage VGS(th) -0.7 -1.4 -2.0 V ID = -1mA, VDS = VGS
7.1 9 VGS = -10V, ID = -200mA
Static Drain-Source On-Resistance (Note 10) RDS(on) ⎯ Ω
8.8 11 VGS = -3.5V, ID = -100mA
Forward Transconductance (Notes 10 & 12) gfs 125 ⎯ ⎯ mS VDS = -10V, ID = -200mA
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance Ciss ⎯ 100 200
VDS = -25V, VGS = 0V
Output Capacitance Coss ⎯ 18 25 pF
f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 5 15
Turn-On Delay Time (Note 11) td(on) ⎯ 8 15
Rise Time (Note 11) tf ⎯ 8 15 VDD = -50V, ID = -250mA
ns
Turn-Off Delay Time (Note 11) td(off) ⎯ 26 40 VGEN = -10V
Fall Time (Note 11) tf ⎯ 20 30
Notes: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.

ZVP4424Z 3 of 6 December 2012

Document Number DS33410 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 A Product Line of
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ZVP4424Z

Typical Characteristics

ZVP4424Z 4 of 6 December 2012

Document Number DS33410 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 A Product Line of
Diodes Incorporated

ZVP4424Z

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D1 0
.20
R0 C
SOT89
Dim Min Max
A 1.40 1.60
1
H
H
E B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
B1 B L D 4.40 4.60
D1 1.62 1.83
e E 2.29 2.60
8° (4X) e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
A L 0.89 1.20
All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1
Dimensions Value (in mm)
X 0.900
X2 (2x) X1 1.733
X2 0.416
Y1
Y3 Y 1.300
Y4
Y1 4.600
Y2
Y2 1.475
Y
Y3 0.950
Y4 1.125
C
C 1.500
X (3x)

ZVP4424Z 5 of 6 December 2012

Document Number DS33410 Rev. 2 - 2 www.diodes.com © Diodes Incorporated
 A Product Line of
Diodes Incorporated

ZVP4424Z

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.

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final and determinative format released by Diodes Incorporated.

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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1. are intended to implant into the body, or

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

ZVP4424Z 6 of 6 December 2012

Document Number DS33410 Rev. 2 - 2 www.diodes.com © Diodes Incorporated