〈Transistor〉

RT1N144X SERIES Transistor With Resistor

For Switching Application
Silicon NPN Epitaxial Type

OUTLINE DRAWING
DESCRIPTION
UNIT：mm
RT1N144X is a one chip transistor
RT1N144C
with built-in bias resistor,PNP type is RT1P144X.
2.8
0.65 1.5 0.65

FEATURE

0.4
0.95
①
・Built-in bias resistor (R1=10kΩ,R2=47kΩ).

1.90
2.8

0.95
② ③
APPLICATION
Inverted circuit,switching circuit,interface circuit,driver circuit.

1.1

0.13
0.8
Equivalent circuit

0～0.1
C
(OUT) JEITA：SC-59
R1 JEDEC：Similar to TO-236
B
(IN) Terminal Connector
R2 ①：Base
②：Emitter
E ③：Collector
(GND)

RT1N144U RT1N144M RT1N144S

1.5 2.1 4.0

0.35 0.8 0.35 0.425 1.25 0.425

7.5MAX
3.0
0.32

0.3
0.65

①
0.5

0.1
1.0

①
0.22

2.0
1.3
1.7
1.0

1.0
13.0MIN
0.65

② ③ 0.45
0.5

②
14.0

2.5 2.5
0.4
0.9

0.15
0.7

0.12
0.55

0.7

2.5

① ② ③
0～0.1
0～0.1

JEITA：SC-75A JEITA：SC-70 JEITA：－

JEDEC：－ JEDEC：－ JEDEC：－
Terminal Connector Terminal Connector Terminal Connector
①：Base ①：Base ①：Emitter
②：Emitter ②：Emitter ②：Collector
③：Collector ③：Collector ③：Base

ISAHAYA ELECTRONICS CORPORATION

 〈Transistor〉
RT1N144X SERIES Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type

MARKING
RT1N144C
RT1N144M RT1N144S
RT1N144U

N14
N5 4□□
type name Lot №
type name

MAXIMUM RATING (Ta=25℃)

RATING
SYMBOL PARAMETER UNIT
RT1N144U RT1N144M RT1N144C RT1N144S
ＶＣＢＯ Collector to Base voltage 50 V
ＶＥＢＯ Emitter to Base voltage 6 V
ＶＣＥＯ Collector to Emitter voltage 50 V
ＶIN Input voltage 40 V
Ｉ Ｃ Collector current 100 mA
Ｉ ＣＭ Peak Collector current 200 mA
ＰＣ Collector dissipation(Ta=25℃) 150 200 450 mW
Ｔｊ Junction temperature +150 ℃
Ｔｓｔｇ Storage temperature -55～+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

LIMIT
SYMBOL PARAMETER TEST CONDITION UNIT
MIN TYP MAX
Ｖ（ＢＲ）ＣＥＯ C to E break down voltage I C=100μA，RBE=∞ 50 － － V
Ｉ ＣＢＯ Collector cut off current VCB=50V，I E =0 － － 0.1 μA
Ｉ EＢＯ Emitter cut off current VEB=5V，I C =0 70 88 119 μA
ｈＦＥ DC forward current gain VCE=5V，I C =5mA 50 － － －
ＶＣＥ（ｓａｔ） C to E saturation voltage I C =10mA，I B =0.5mA － 0.1 0.3 V
ＶＩ（ＯＮ） Input on voltage VCE=0.2V，I C =5mA － 1.0 1.8 V
ＶＩ（ＯＦＦ） Input off voltage VCE=5V，I C =100μA 0.4 0.7 － V
Ｒ１ Input resistor － 7.0 10 13 kΩ
Ｒ２／Ｒ１ Resistor ratio － 4.2 4.7 5.1 －
ｆＴ Gain band width product VCE=6V，I E =-10mA － 200 － MHz

ISAHAYA ELECTRONICS CORPORATION

 〈Transistor〉
RT1N144X SERIES Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type

TYPICAL CHARACTERISTICS
COLLECTOR DISSIPATION DC FORWARD CURRENT GAIN
VS AMBIENT TEMPERATURE VS COLLECTOR CURRENT
600 1000
RT1N144S VCE=5V
COLLECTOR DISSIPATION Pc (mW)

500

DC FORWARD CURRENT GAIN

RT1N144C
RT1N144M
400 100

RT1N144U Ta=-40℃

hFE
300
Ta=25℃
Ta=85℃
200 10

100

0 1
0 25 50 75 100 125 150 175 0.1 1 10 100
AMBIENT TEMPERATURE Ta (℃) COLLECTOR CURRENT IC(mA)

INPUT ON VOLTAGE COLLECTOR CURRENT

VS COLLECTOR CURRENT VS INPUT OFF VOLTAGE
10 1000
VCE=0.2V VCE=5V
Ta=-40℃
COLLECTOR CURRENT IC (μA)

Ta=-40℃
INPUT ON VOLTAGE

Ta=25℃ Ta=25℃
VI(on) (V)

Ta=85℃
1 100
Ta=85℃

0.1 10
0.1 1 10 100 0 0.5 1 1.5 2
COLLECTOR CURRENT IC(mA) INPUT OFF VOLTAGE VI(off) (V)

COLLECTOR TO EMITTER SATURATION

VOLTAGE VS COLLECTOR CURRENT
1
IC/IB=20/1
COLLECTOR TO EMITTER SATURATION

Ta=85℃
VOLTAGE VCE(sat) (V)

Ta=25℃
Ta=-40℃
0.1

0.01
1 10 100
COLLECTOR CURRENT IC(mA)

ISAHAYA ELECTRONICS CORPORATION

 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

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Aug.2013