＜Multi-Function Transistor＞

RT8Ｈ012Ｃ

Bipolar voltage detector

DESCRIPTION PIN CONFIGURATION Unit：ｍｍ

 RT8H012C is a NPN transistor, a PNP transistor, and
2.8
the compound transistor constituted by resistance.
1.6
A circuit designed for detecting input voltage and resetting system.

0.4
① ⑥

0.95 0.95
② ⑤

2.9
③ ④
FEATURE
● The miniaturization of a set and high-density mounting
are possible.
● Wide supply voltage range. （2V∼36V）

1.1

0.13
● A detection voltage setup is possible by external resistance.

0.6
● A delay time setup is possible by external capacity.
● "L" reset output of open collector.

0∼0.1
APPLICATION
Reset of logic circuit. Out line
Over voltage protection circuit. 6 5 4 ①VS
②C
③RP
012 ④OUT
⑤GND
１ 2 3 ⑥VCC

BLOCK DIAGRAM
VCC RP

OUT

VS
delay

GND C

Notes ： The external resistance for an output capability setup needs to be connected for RP terminal.

041007
（１／４）
 ＜Multi-Function Transistor＞

RT8Ｈ012Ｃ

Bipolar voltage detector

ABSOLUTE MAXIMUM RATINGS (Ta=25℃ Unless otherwise noted)

Symbol Parameter Ratings Unit

Vcc Supply voltage 37 V

VOUT Output voltage Vcc V

IOUT Output sink current 20 mA

PD Power Dissipation 200 mW

TOPR Operating temperature -20∼+75 ℃

TSTG Storage temperature -40∼＋150 ℃

ELECTRICAL CHARACTERISTICS (Vcc=5V , Ta=25℃ Unless otherwise noted)

Limits
Symbol Parameter Test condition Unit
Min Typ Max
Vcc Supply voltage 2 36 V

ICC Circuit current Rp=47kΩ 250 uA

VS Detecting voltage 1.15 1.2 1.25 V

ΔVS Hysterisis voltage 15 30 45 ｍV

Vs/ΔT Detecting voltage temperature coefficient 0.02 %/℃

VCC≦７V -0.3 VCC
VIN Input voltage range V
VCC＞７V -0.3 7
IIN Input current VS=1.25V 130 500 nA

Tpd Delay time：VOUT L→H Cd=0.1uF 2.4 ｍｓ

Icd Constant current at Cd pin -80 -55 -30 uA

Vo(sat) Output saturation voltage Rp=47kΩ、IL=3mA 0.2 0.4 V

IOL Output leakage current VOUT=5V 1 uA

041007
（２／４）
 ＜Multi-Function Transistor＞

RT8Ｈ012Ｃ

Bipolar voltage detector

APPLICATION CIRCUIT EXAMPLE

Vcc

RP

Vcc RP RL
R1

OUT
VS
delay

RP：Resistance which
sets up output current capability
R2 Cd：Delay capacitor

GND C
Cd

The detecting supply voltage （Typ）＝1.2 × R1＋R2 V

R2
The delay time （Typ）＝0.024×Cd（uF） sec

TYPICAL CHARACTERISTICS

CIRCUIT CURRENT VS SUPPLY VOLTAGE DETECTING VOLTAGE VS SUPPLY VOLTAGE

（IRP≒100uA,IL≒5mA）
2.00
1.80 1.25
DETECTING VOLTAGE Vs（V)

1.60 VSH
CIRCUIT CURRENT （mA）

1.24
1.40 RP=22K 1.23
1.20 1.22
RP=47K 1.21
1.00
0.80 1.2
RP=100K VSL
1.19
0.60
RP=360K 1.18
0.40
1.17
0.20
1.16
0.00 0 10 20 30 40
0 5 10 15 20 25 30 35 40 SUPPLY VOLTAGE （V)
SUPPLY VOLTAGE （V）

041007
（３／４）
 ＜Multi-Function Transistor＞

RT8Ｈ012Ｃ

Bipolar voltage detector

DETECTING VOLTAGE VS AMBIENT HYSTERISIS VOLTAGE VS AMBIENT

TEMPERATURE TEMPERATURE
1.25
0.06
1.24
DETECTING VOLTAGE VSL

HYSTERISYS VOLTAGE ΔVs

1.23 0.05
1.22
0.04 Vcc=10V
1.21
Vcc=10V
（V）

1.2 0.03

（V）
Vcc=5V
1.19 Vcc=5V
0.02 Vcc=3V
1.18
Vcc=3V
1.17 0.01
1.16
1.15 0
-40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100
AMBIENT TEMPERATURE Ta（℃） AMBIENT TEMPERATURE Ta（℃）

OUTPUT SATURATION VOLTAGE VS OUTPUT SINK CURRENT

DELAY TIME VS DELAY CAPACITANCE
VCC=5V、Ta=25℃ VCC=5V、Ta=25℃
1000000 3.5
OUTPUT SATURATION VOLTAGE （V)

RP=360K
100000 3 RP=51K RP=30K
RP=100K RP=10K
10000 2.5
DELAY TIME (us)

VOUT=L→H
1000 2

100 1.5
VOUT=H→L
10 1

1 0.5

0.1 0
1E-10 1E-09 1E-08 1E-07 1E-06 0.00001 0 5 10 15 20 25 30
DELAY CAPACITANCE (F) OUTPUT SINK CURRENT (mA)

LOW SUPPLY VOLTAGE VS OUTPUT VOLTAGE (RP=100k LOW SUPPLY VOLTAGE VS OUTPUT VOLTAGE (RP=360kΩ)
Ω)
VCC=5V、Ta=25℃ VCC=5V、Ta=25℃
1.00
1.00
0.90
0.90
0.80
OUTPUT VOLTAGE （V）
OUTPUT VOLTAGE （V）

0.80
0.70
0.70
0.60
0.60
0.50
0.50

0.40 0.40

0.30 0.30
RL=5.1K
0.20 RL=2.2K 0.20
0.10 0.10
RL=22K RL=51K
0.00 0.00
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
SUPPLY VOLTAGE （V） SUPPLY VOLTAGE （V）

041007
（４／４）
 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

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Jun.2005