AL8812

BOOST/BUCK DC-DC CONVERTER FOR DIMMABLE MR16 LED LAMPS

Description Pin Assignments

The AL8812 is a monolithic control circuit containing the primary
functions required for DC-to-DC converters with MOSFET in one NC 1 12 DRAIN
package. These devices consist of an internal temperature
compensated reference, comparator, controlled duty cycle oscillator GATE 2 11 SOURCE
with an active current limit circuit, driver and high current output
switch. Additionally a 60V, 3.6A MOSFET is integrated for reduced INPUT 3 10 TIMING
BOM cost and size. This series is specifically designed for buck and
VCC 4 9 GND
boost applications with a minimum number of external components.

SENSE 5 8 SW/E

DRIVE 6 7 SW/C

U-DFN6040-12

Features Applications
• Operation from 3.0V to 20V Input • Low Voltage LED Lighting such as MR-16
• Integrated 60V, 3.6A MOSFET • General Purpose DC-DC Converter
• Low Standby Current
• Current Limiting
• Output Voltage Adjustable
• Frequency Operation to 100 kHz
• Precision 2% Reference
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Typical Applications Circuit

Dimmable MR-16 LED Driver System Diagram

(For detailed schematic please contact your Diodes Sales Representative)

AL8812 1 of 11 March 2014

Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
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Pin Descriptions
Pin
Pin
Number Function
Name
(U-DFN6040-12)
NC 1 No Connection
GATE 2 Gate connection of internal MOSFET.
INPUT 3 Feedback pin for inverting input of internal comparator
VCC 4 Supply voltage pin
SENSE 5 No Connection.
Current drive collector:
DRIVE 6
Normally connected to VCC directly or via a resistor.
SW/C 7 Internal switch transistor collector
SW/E 8 Internal switch transistor emitter
GND 9 Ground Connection
TIMING 10 Timing Capacitor to control the switching frequency.
SOURCE 11 Source connecton of internal MOSFET
DRAIN 12 Drain connection of internal MOSFET
Exposed PAD1 Exposed Pad of MOSFET Drain
Exposed PAD2 Exposed Pad of AL8812 and connect to PCB ground

Functional Diagram

6 7
DRIVE SW/C

S Q Q2

R Q1
100 8
5
SENSE SW/E

Ipk
Oscillator
CT

4 10
Comparator TIMING
VCC
+ 1.25V
Reference
_
Regulator

3 9
INPUT GND

12
DRAIN

2
GATE
11
SOURCE

AL8812 2 of 11 March 2014

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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Symbol Parameter Value Unit
VCC Power Supply Voltage 20 V
VIR Comparator Input Voltage Range -0.3 to +36 V
SW/C Switch Collector Voltage 36 V
SW/E Switch Emitter Voltage (VPin 1 = 40V) 36 V
VCE (switch) Switch Collector to Emitter Voltage 36 V
DRIVE Driver Collector Voltage 36 V
IC (driver) Driver Collector Current (Note 4) 100 mA
ISW Switch Current 1.6 A
VDS Maximum MOSFET Drain-Source voltage 60 V
VGS Maximum MOSFET Gate-Source voltage +/-20 V
ISOURCE Maximum Continuous Source (Body Diode) Current 3.7 A
Continuous Power Dissipation (TA = +25°C)
PD 1000 mW
(U-DFN6040-12 (derate 10mW/°C above +25°C)
θJA Junction-to-Ambient Thermal Resistance 47.31 °C/W
θJC Junction-to-Case Thermal Resistance 6.42 °C/W
TMJ Maximum Junction Temperature +150 °C
TOP Operating Junction Temperature Range 0 to +105 °C
Tstg Storage Temperature Range -65 to +150 °C
ESD HBM Human Body Model ESD Protection 250 V
ESD MM Machine Model ESD Protection 100 V
Note: 4. Maximum package power dissipation limits must be observed.

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Symbol Characteristics Min Typ Max Unit
OSCILLATOR
fosc Frequency (VPIN 5 = 0V, CT = 1.0nF, TA = +25°C) 24 33 42 kHz
Ichg Charge Current (VCC = 5.0V to 40V, TA = +25°C) 24 30 42 μA
Idischg Discharge Current (VCC = 5.0V to 40V, TA = +25°C) 140 200 260 μA
Idischg / Ichg Discharge to Charge Current Ratio (Pin 7 to VCC, TA = +25°C) 5.2 6.5 7.5 —
Vipk (sense) Current Limit Sense Voltage (Ichg = Idischg, TA = +25°C) 300 400 450 mV
OUTPUT SWITCH (Note 5)
Saturation Voltage, Darlington Connection
VCE (sat) — 1.0 1.3 V
(ISW = 1.0A, Pins 1,8 connected)
Saturation Voltage, Darlington Connection
VCE (sat) — 0.45 0.7 V
(ISW = 1.0A, ID = 50mA, Forced ß ≈ 20)
hFE DC Current Gain (ISW = 1.0A, VCE = 5.0V, TA = +25°C) 50 75 — —
IC (off) Collector Off-State Current (VCE = 40V) - 0.01 100 μA
OUTPUT MOSFET
VGS(th) MOSFET Gate Threshold voltage 1 — 2.2 V
VFD MOSFET Diodes forward voltage — .85 .95 V
Drain-source on-resistance (VGS = 10V, ID = 2.5A) 120 mΩ
RDS(ON) — —
Drain-source on-resistance (VGS = 4.5V, ID = 2A) 180 mΩ
COMPARATOR
Vth Threshold Voltage — — — V
— TA = +25°C 1.225 1.25 1.275 —
o o
— TA = 0 C to +70 C 1.21 — 1.29 —
Regline Threshold Voltage Line Regulation (VCC = 3.0V to 40V) — 1.4 6.0 mV
TOTAL DEVICE
Supply Current (VCC = 5.0V to 40V, CT =1.0nF, Pin 7 = VCC, VPin 5 > Vth Pin 2
ICC — — 3.5 mA
= Gnd, remaining pins open)
Note: 5. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature as possible.

AL8812 3 of 11 March 2014

Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
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Performance Characteristics

Figure 1. Vce(sat) versus le Figure 2. Reference Voltage versus Temp.

1.4
1.26
Vce(sat), Saturation Voltage (V)

Reference Voltage (V)

1.2
1.255

1 1.25

0.8 1.245

0.6 1.24
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 10 20 30 40 50 60 70 80 90 100
Ie, Emitter Current (A) Temperature (oC)

Figure 3. Current Limit Sense Voltage Figure 4. Standby Supply Current

versus Temperature versus Supply Voltage
440 4.0
Current Sense Voltage (mV)

3.5
Icc, Supply Current (mA)
420
3.0

400
2.5

380 2.0

1.5
360
1.0

340 0.5

320 0.0
0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40
Temperature (oC) Vcc, Supply Voltage (V)

Figure 5. Emitter Follower Configuration Figure 6.Output Switch On-Off Time versus
Output Saturation Voltage vs. Emitter Current Oscillator Timing Capacitor
1000
ton-off, Output Switch On-Off Time(us)

1.8

1.75 Vcc=2~10V
Pin1,7,8=Vcc
100 VCC = 5.0V
VCE ( sat), (V)

1.7 Pin3,5=GND
TA=25oC
Pin 7 = VCC
Pin 5 = GND
ton
Pin2=5 ≤10W
1.65 TA = 25oC

1.6 10

1.55
t off
1.5 1

1.45

1.4 0.1
100 300 500 700 900 1100 1300 1500 0.01 0.1 1 10
IE(mA) CT, Oscillator Timing Capacitor ( nF)

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T = 2 5°C 10 V 5V T = 150°C 10V 5V

10 10 4V
ID Drain Current (A)

ID Drain Current (A)

4V
3.5V
3.5V
3V
1 1
3V
2.5V

VGS V GS
0 .1
0.1 2V
2.5V

0. 1 1 10 0 .1 1 10
V D S D rain-Source Voltage (V) V DS Dr ain- Sourc e Voltage ( V)
Output Characteristics Outp ut Char acteris tics

Normalised RDS (on) and VGS(th)

10 V DS = 10V 1 .8
V GS = 10V
1 .6 I D = 2.5A
ID Drain Current (A)

T = 150°C 1 .4 R DS (on )

1 1 .2
1 .0
T = 25 °C 0 .8 VGS ( th)
V GS = V DS
0.1 0 .6
I D = 250uA
2 3 4 5 0 .4
-5 0 0 50 10 0 150
V G S Gate-Source Voltage (V) Tj Junctio n Tem pe ra tu re ( °C)
Typ ical Transfer Characte ristics Norm alised Curves v Tem perature
RDS(on) Drain-Source On-Resistance (W)

1
IS D Reverse Drain Current (A)

3V 3.5V 4V 4.5V 10

V GS

5V
1 T = 150°C

1 0V
0.1 T = 25°C
T = 2 5°C 0.1
1 10 0.4 0 .6 0.8 1.0 1.2
I D Dr ain Cu rrent (A) V SD Sou rce- Drain Voltage ( V)
On-Resistance v Drain Cur rent Source-Drain Diode Forw ard Voltage

500 10
VGS Gate-Source Voltage (V)

V GS = 0V ID = 2.5A
400 f = 1MHz 8
C Capacitance (pF)

300 6 VD S = 30V
CI SS
COSS
200 4
CRSS
100 2

0 1 10 00 1 2 3 4 5 6
VDS - Drain - Source Voltage (V) Q - Charge (nC)
Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge

AL8812 5 of 11 March 2014

Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 AL8812

Typical Application Circuits

Circuits shown below represent connections employed for different topologies. To use the integrated MOSFET the typical configuration below
can be used.

DRIVE

SW/C

SW/E

GATE

DRAIN

SOURCE

AL8812

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Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 AL8812

Typical Application Circuits (cont.)

Boost Converter

Test Conditions Results

Line Regulation Vin = 9V to 12V, IO = 200mA 20mV = ±0.035%
Load Regulation Vin = 12V, IO = 50mA to 200mA 15mV = ±0.035%
Output Ripple Vin = 12V, IO = 200mA 500mVPP
Efficiency Vin = 12V, IO = 200mA 80%

AL8812 7 of 11 March 2014

Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
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Typical Application Circuits (cont.)

Buck Converter

Test Conditions Results

Line Regulation Vin = 12V to 24V, IO = 500mA 20mV = ±0.2%
Load Regulation Vin = 24V, IO = 50mA to 500mA 5mV = ±0.05%
Output Ripple Vin = 24V, IO = 500mA 160mVPP
Efficiency Vin = 24V, IO = 500mA 82%

AL8812 8 of 11 March 2014

Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 AL8812

Design Formula Table

Calculation Boost Buck
VOUT + VF -VIN (min) VOUT + vF
tON / toff
VIN (min) - Vsat VIN (min) - VSAT - VOUT
( tON + toff ) 1/f 1/f
tON + tOFF tON + tOFF
toff tON tON
+1 +1
tOFF tOFF
tON ( tON +tOFF ) - tOFF ( tON +tOFF) - tOFF
-5 -5
CT 4.0×10 tON 4.0×10 tON
Ipk (switch) 2IOUT (max) (tON / toff +1) 2IOUT (max)
Rsc 0.3 / Ipk (switch) 0.3 / Ipk (switch)
( VIN (min) – Vsat ) ( VIN (min) – VSAT -VOUT )
L (min) ton (max) ON (max)
Ipk (switch) Ipk (switch)
IOUT tON Ipk (switch) ( tOFF + tON )
CO 9
Vripple (pp) 8Vripple (pp)
Vsat = Saturation voltage of the output switch.
VF = Forward voltage drop of the output rectifier.

The following power supply characteristics must be chosen:

VIN - Nominal input voltage.
VOUT - Desired output voltage, |VOUT| = 1.25 (1+R2/R1)
IOUT - Desired output current.
fmin - Minimum desired output switching frequency at the selected values of Vin and Io.
Vripple(pp) - Desired peak-to-peak output ripple voltage. In practice, the calculated capacitor value will need to be increased due to its
equivalent series resistance and board layout. The ripple voltage should be kept to a low value since it will directly affect the line and
load regulation.

AL8812 9 of 11 March 2014

Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 AL8812

Ordering Information

Tube 13” Tape and Reel

Part Number Package Code Packaging Part Number Part Number
Quantity Quantity
Suffix Suffix
AL8812FDF-13 FDF U-DFN6040-12 NA NA 3000/Tape & Reel -13

Marking Information
(1) U-DFN6040-12

Package Outline Dimensions (All dimensions in mm.)

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A1 A3

A U-DFN6040-12
Seating Plane
Dim Min Max Typ
A 0.55 0.65 0.60
D A1 0 0.05 0.02
e A3 - - 0.15
b 0.35 0.45 0.40
D 5.95 6.05 6.00
D1 1.95 2.15 2.05
D2 D2 2.35 2.55 2.45
D1 e - - 1.00
E E1 E2
E 3.95 4.05 4.00
E1 2.10 2.30 2.20
L
E2 1.80 2.00 1.90
L 0.35 0.45 0.40
Z - - 0.30
b All Dimensions in mm
Z

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Document number: DS37099 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
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Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X3 Value
Dimensions
(in mm)
C Y C 0.500
G G 0.650
G1 0.350
X 0.250
X1 1.075
X2 1.275
Y1 Y2 Y3 X3 2.750
X1 X2 G1 Y 0.400
Y1 1.150
Y2 1.000
Y3 2.300
Pin1
X

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