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    KSR 1002

    Uploaded by

    Silk Karim Oussama
    This document provides specifications for the KSR1002 NPN epitaxial silicon transistor. It is intended for switching applications and includes a built-in bias resistor. The transistor has absolute maximum ratings including 50V for collector-base and collector-emitter voltages. Electrical characteristics include a DC current gain of 30 min, 250MHz current gain-bandwidth product, and 0.3V typical collector-emitter saturation voltage.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    KSR 1002

    Uploaded by

    Silk Karim Oussama
    40 views2 pages
    This document provides specifications for the KSR1002 NPN epitaxial silicon transistor. It is intended for switching applications and includes a built-in bias resistor. The transistor has absolute maximum ratings including 50V for collector-base and collector-emitter voltages. Electrical characteristics include a DC current gain of 30 min, 250MHz current gain-bandwidth product, and 0.3V typical collector-emitter saturation voltage.

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    NPN ksr1002

    Original Title

    ksr1002

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    This document provides specifications for the KSR1002 NPN epitaxial silicon transistor. It is intended for switching applications and includes a built-in bias resistor. The transistor has absolute maximum ratings including 50V for collector-base and collector-emitter voltages. Electrical characteristics include a DC current gain of 30 min, 250MHz current gain-bandwidth product, and 0.3V typical collector-emitter saturation voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views2 pages

    KSR 1002

    Uploaded by

    Silk Karim Oussama
    This document provides specifications for the KSR1002 NPN epitaxial silicon transistor. It is intended for switching applications and includes a built-in bias resistor. The transistor has absolute maximum ratings including 50V for collector-base and collector-emitter voltages. Electrical characteristics include a DC current gain of 30 min, 250MHz current gain-bandwidth product, and 0.3V typical collector-emitter saturation voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    KSR1002 NPN EPITAXIAL SILICON TRANSISTOR

    SWITCHING APPLICATION (Bias Resistor Built In)


    • Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92
    Ï
    • Built in bias Resistor (R1=10 , R2=10 )Ï
    • Complement to KSR2002

    ABSOLUTE MAXIMUM RATINGS (TA=25 Î)


    Characteristic Symbol Rating Unit

    Collector-Base Voltage VCBO 50 V


    Collector-Emitter Voltage VCEO 50 V
    Emitter-Base Voltage VEBO 10 V
    Collector Current IC 100 mA

    Î
    Collector Dissipation PC 300 mW
    Junction Temperature TJ 150
    Storage Temperature T STG -55 ~ 150 Î

    1. Emitter 2. Collector 3. Base

    ELECTRICAL CHARACTERISTICS (TA=25 Î)


    Characteristic Symbol Test Conditions Min Typ Max Unit

    À
    IC=10 , IE=0
    Collector-Base Breakdown Voltage BVCBO
    À
    IC=100 , IB=0
    50 V

    À
    Collector-Emitter Breakdown Voltage BVCEO 50 V
    Collector Cut-off Current ICBO VCB=40V, IE=0 0.1
    DC Current Gain hFE VCE=5V, IC=10mA 30
    Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA 0.3 V
    Current Gain-Bandwidth Product fT VCE=5mA, IC=10V 250 MHz
    Output Capacitance COB VCB=10V, IE=0 3.7 pF

    À
    f=1.0MHz
    Input Off Voltage VI(off) VCE=5V, IC=100 0.5 V
    VCE=0.3V, IC=20mA
    Ï
    Input On Voltage VI(on) 3 V
    Input Resistor R1 7 10 13
    Resistor Ratio R1/R2 0.9 1 1.1

    Equivalent Circuit

    Collector

    Base

    Emitter
    KSR1002 NPN EPITAXIAL SILICON TRANSISTOR

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