ES1AF THRU ES1JF

Surface Mount Superfast Recovery Rectifier

Reverse Voltage – 50 to 600 V PINNING
Forward Current – 1 A PIN DESCRIPTION
1 Cathode
FEATURES 2 Anode
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
1
• Superfast reverse recovery time 2
• Lead free in comply with EU RoHS 2011/65/EU directives
Top View
Marking Code:
MECHANICAL DATA ES1AF~ES1JF: ES1A~ES1J
• Case: SMAF Simplified outline SMAF and symbol
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 27mg / 0.00095oz

Absolute Maximum Ratings and Characteristics

Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

Parameter Symbols ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units

Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V

Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V

Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V

Maximum Average Forward Rectified Current

I F(AV) 1 A
at T c = 125 °C

Peak Forward Surge Current 8.3 ms Single Half

Sine Wave Superimposed on Rated Load
I FSM 30 A

Maximum Forward Voltage at 1 A VF 1 1.25 1.68 V

Maximum DC Reverse Current T a = 25 °C 5

IR μA
at Rated DC Blocking Voltage T a =125 °C 100

Typical Junction Capacitance

Cj 15 pF
at V R =4V, f=1MHz

（1）
Maximum Reverse Recovery Time t rr 35 ns

Typical Thermal Resistance （2） RθJA 80 °C/W

Operating and Storage Temperature Range T j , T stg -55 ~ +150 °C

（1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A .

（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 Page 1 of 3
 ES1AF THRU ES1JF

Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram

50 ohm
Noninductive
10 ohm
Noninductive
t rr
+0.5

D.U.T
+
PULSE
25Vdc GENERATOR 0
approx Note 2

- -0.25

1 ohm OSCILLOSCOPE
NonInductive Note 1

-1.0
Note：1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF. 10ns/div
2. Ries Time =10ns, max.
Source Impedance = 50 ohms. Set time Base for 10ns/div

Fig.2 Maximum Average Forward Current Rating Fig.3 Typical Reverse Characteristics

1.2 300
Average Forward Current (A)

100
1.0 I R - Reverse Current ( μ A)
T J =125°C
0.8
10
0.6 T J =75°C

0.4
1.0
T J =25°C
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0 0.1
25 50 75 100 125 150 175 0 20 40 60 80 100

Case Temperature (°C) % of PIV.VOLTS

Fig.4 Typical Forward Characteristics Fig.5 Typical Junction Capacitance

10 100
Junction Capacitance ( pF)
Instaneous Forward Current (A)

T J =25°C

1.0
ES1AF~ES1DF

0.1 ES1EF/ES1GF 10
ES1JF

0.01
T J=25°C
f = 1.0MHz
V sig = 50mV p-p
0.001 1
0 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100
Instaneous Forward Voltage (V) Reverse Voltage (V)

Fig.6 Maximum Non-Repetitive Peak

Forward Surage Current
Peak Forward Surage Current (A)

35

30

25

20

15

10

05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1 10 100

Number of Cycles

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 Page 2 of 3
 ES1AF THRU ES1JF

PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SMAF

∠ALL ROUND ∠ALL ROUND

A
C

HE V M A E

g g
D A

pad

pad
E

Top View Bottom View

UNIT A C D E e g HE ∠

max 1.1 0.20 3.7 2.7 1.6 1.2 4.9

mm
min 0.9 0.12 3.3 2.4 1.3 0.8 4.4
7°
max 43 7.9 146 106 63 47 193
mil
min 35 4.7 130 94 51 31 173

The recommended mounting pad size Marking

Type number Marking code

1.6 2.2 1.6
ES1AF ES1A
(63) (86) (63)
ES1BF ES1B

ES1CF ES1C

ES1DF ES1D
(71)
1.8

ES1EF ES1E

ES1GF ES1G
mm
Unit ：
(mil) ES1JF ES1J

Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0 Page 3 of 3