Bav99 r1.1.0 Fairchild
Bav99 r1.1.0 Fairchild
Bav99 r1.1.0 Fairchild
April 2014
BAV99
200 mA 70 V High Conductance Ultra-Fast Switching
Diode
Features Description
• High Conductance: IF = 200 mA The BAV99 is a 350 mW high-speed switching diode
• Fast Switching Speed: trr < 6 ns Maximum array with series-pair diode configuration. It achieves
• Small Plastic SOT-23 Package high-current conductivity, up to 200 mA, in a very small
7mm2 footprint. These features make the BAV99 optimal
• Series-Pair Configuration
for area-constrained applications that need a little extra
power capability.
Connection Diagram
3
3
3
A7
2
1 2
1
1 2
SOT-23
Ordering Information
Part Number Marking Package Packing Method
BAV99 A7 SOT-23 3L Tape and Reel, Reel 7 inch
BAV99_D87Z A7 SOT-23 3L Tape and Reel, Reel 13 inch
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
150
Ta= 25 °C 300
Ta= 25° C
250
140
200
130
150
100
120
50
110 0
1 2 3 5 10 20 30 50 100 10 20 30 50 70 100
Reverse Current, IR [uA] Reverse Voltage, V R [V]
Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage
Ta= 25 ° C Ta= 25 ° C
700
450
Forward Voltage, VF [mV]
Forward Voltage, VF [mV]
650
400
600
350
550
300
500
250
450
1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10
Forward Current, IF [uA] Forward Current, IF [mA]
Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current
VF - 1 to 100 μA VF - 0.1 to 10 mA
1.3
Ta= 25 ° C Ta= 25 ° C
1.4
Total Capacitance [pF]
Forward Voltage, VF [V]
1.2 1.2
1.0
1.1
0.8
0.6 1.0
10 20 30 50 100 200 300 500 0 2 4 6 8 10 12 14
Forw ard C urrent, I F [m A ] R everse V oltage [V ]
Figure 5. Forward Voltage vs. Forward Current Figure 6. Total Capacitance vs. Reverse Voltage
VF - 10 to 800 mA
4.0 400
Ta= 25 °C
Reverse Recovery Time [ns]
3.5
300
3.0
Current [mA]
2.5 200 IF
(A V
) -A
VE
RA
GE
2.0 RE
CT
IF IE
100 DC
UR
1.5 RE
NT
-m
A
1.0 0
10 20 30 40 50 60 0 50 100 150
o
Reverse Current [mA] Ambient Temperature, T A [ C]
Figure 7. Reverse-Recovery Time vs. Figure 8. Average Rectified Current (IF(AV)) vs.
Reverse Current Ambient Temperature (TA)
500
Power Dissipation, PD [mW]
400
300
SOT-23 Pkg
200
100
0
0 25 50 75 100 125 150 175 200
o
Average Tem perature, [ C]
SOT-23
2.92±0.20 0.95
3
1.40
1.30+0.20
-0.15 2.20
1 2
(0.29) 0.60
0.95 0.37
0.20 A B 1.00
1.90 1.90
LAND PATTERN
RECOMMENDATION
(0.93) 0.10
0.00
0.10 C
C 2.40±0.30
SCALE: 2X
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
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