SS29, SS210

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Vishay General Semiconductor
High Voltage Surface-Mount Schottky Rectifier
FEATURES
• Low profile package Available

• Ideal for automated placement

• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
SMB (DO-214AA) • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Cathode Anode • AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc?99912

3D 3D TYPICAL APPLICATIONS
3D Models
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A MECHANICAL DATA
VRRM 90 V, 100 V
Case: SMB (DO-214AA)
IFSM 75 A Molding compound meets UL 94 V-0 flammability rating
VF 0.71 V Base P/N-E3 - RoHS-compliant, commercial grade
TJ max. 150 °C Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
Package SMB (DO-214AA) (“_X” denotes revision code e.g. A, B,.....)
Circuit configuration Single Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SS29 SS210 UNIT
Device marking code S9 S10
Maximum repetitive peak reverse voltage VRRM 90 100 V
Maximum RMS voltage VRMS 63 70 V
Maximum DC blocking voltage VDC 90 100 V
Maximum average forward rectified current (fig. 1) IF(AV) 1.5 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 75 A
superimposed on rated load
Peak repetitive reverse surge current at tp = 2 μs, 1 kHz IRRM 1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

Revision: 23-Apr-2020 1 Document Number: 88749

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL SS29 SS210 UNIT
IF = 0.1 A 0.43
IF = 1.0 A TA = 25 °C 0.75
Maximum instantaneous forward voltage (1) IF = 3.0 A VF 0.95 V
IF = 1.5 A 0.71
TA = 100 °C
IF = 3.0 A 0.85
TA = 25 °C 30 μA
Maximum DC reverse current at rated VR (1) IR
TA = 100 °C 5 mA
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SS29 SS210 UNIT
RθJA 85
Maximum thermal resistance (1) °C/W
RθJL 25
Note
(1)
PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS210-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
SS210-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
SS210HE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel
SS210HE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

Revision: 23-Apr-2020 2 Document Number: 88749

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SS29, SS210
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
100 10000
2.0
Resistive or Inductive Load

Instantaneous Forward Current (A)

Average Forward Current (A)

1.5 TJ = 150 °C
10 1000

2nd line
TJ = 125 °C
1.0

1 100
TJ = 25 °C
0.5
PCB Mounted on
TJ = -40 °C
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0 0.1 10
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Lead Temperature (°C) Instantaneous Forward Voltage (V)

Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics

Axis Title
2.5 10 000 10000
D = 0.8
Instantaneous Reverse Current (μA)

TJ = 150 °C
1000
2.0 D = 0.5 TJ = 125 °C
Average Power Loss (W)

100
D = 0.3 1000
1.5 D = 0.2 D = 1.0
10

1st line
2nd line

D = 0.1
TJ = 25 °C
1
1.0
T 100
0.1
0.5
0.01
D = tp/T tp TJ = -40 °C

0 0.001 10
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Reverse Leakage Characteristics

100 1000
Peak Forward Surge Current (A)

Junction Capacitance (pF)

75

50 100

25

0 10
1 10 100 0.1 1 10 100
Number of Cycles at 60 Hz Reverse Voltage (V)

Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance

Revision: 23-Apr-2020 3 Document Number: 88749

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMB (DO-214AA)
Cathode Band
Mounting Pad Layout

0.086 (2.20) 0.155 (3.94) 0.085 (2.159)

0.077 (1.95) 0.130 (3.30) MAX.

0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.096 (2.44) MIN.
0.084 (2.13)
0.220 (5.59 REF.

0.060 (1.52) 0.008 (0.2)

0.030 (0.76) 0 (0)
0.220 (5.59)
0.205 (5.21)

Revision: 23-Apr-2020 4 Document Number: 88749

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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