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vssb420s m3

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VSSB420S-M3

www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
SMB (DO-214AA) of 260 °C
• Material categorization: for definitions of compliance
Cathode Anode please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES For use in high frequency converters, freewheeling diodes,
3D 3D DC/DC converters and polarity protection applications.
3D Models

MECHANICAL DATA
Case: SMB (DO-214AA)
PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating
IF(AV) 4.0 A Base P/N-M3 - halogen-free and RoHS-compliant,
VRRM 200 V commercial grade
IFSM 40 A Terminals: matte tin plated leads, solderable per
VF at IF = 4.0 A 0.71 V J-STD-002 and JESD 22-B102
TJ max. 150 °C M3 suffix meets JESD 201 class 2 whisker test
Package SMB (DO-214AA) Polarity: color band denotes the cathode end
Circuit configuration Single

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)


PARAMETER SYMBOL VSSB420S UNIT
Device marking code V4D
Maximum repetitive peak reverse voltage VRRM 200 V
IF (1) 4.0
Maximum DC forward current A
IF (2) 1.8
Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 40 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
Notes
(1) Units mounted on PCB with 20 mm x 20 mm pad areas
(2) Free air, mounted on recommended PCB 1 oz. pad area

Revision: 09-Mar-2021 1 Document Number: 89317


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB420S-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
TA = 25 °C 1.44 1.90
Instantaneous forward voltage IF = 4.0 A VF (1) V
TA = 125 °C 0.71 0.80
TA = 25 °C 3 - μA
VR = 180 V
TA = 125 °C 0.7 - mA
Reverse current per diode IR (2)
TA = 25 °C 4 150 μA
VR = 200 V
TA = 125 °C 1.1 10 mA
Typical junction capacitance 4.0 V, 1 MHz CJ 120 - pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)


PARAMETER SYMBOL VSSB420S UNIT
RθJA (1) 120
Typical thermal resistance °C/W
RθJM (2) 15
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R
θJA - junction to ambient
(2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance R
θJM - junction to mount

ORDERING INFORMATION (Example)


PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSB420S-M3/52T 0.096 52T 750 7" diameter plastic tape and reel
VSSB420S-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel

Revision: 09-Mar-2021 2 Document Number: 89317


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB420S-M3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Axis Title
5.0 10 10000
Average Forward Rectified Current (A)

Instantaneous Reverse Current (mA)


4.5
1
4.0

3.5
0.1 1000
TJ = 150 °C
3.0 TJ = 125 °C

2nd line
TJ = 100 °C

1st line
2nd line
2.5 0.01
2.0
TJ = 25 °C
0.001 100
1.5

1.0
0.0001
0.5 TM Measured at Terminal
TJ = -40 °C
0 0.00001 10
0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100
TM - Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics

4 1000
D = 0.5 TJ = 25 °C
D = 0.8
3.5 D = 0.3 f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)

D = 0.2
Average Power Loss (W)

3.0

2.5
D = 0.1 D = 1.0
2.0 100

1.5 T

1.0

0.5 D = tp/T tp

0 10
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 0.1 1 10 100
Average Forward Current (A) Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance

Axis Title
100 10000 1000
Junction to Ambient
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)

TJ = 150 °C

10 1000 100
2nd line
1st line
2nd line

TJ = 125 °C TJ = 100 °C
1 100 10
TJ = 25 °C

TJ = -40 °C
0.1 10 1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100
Instantaneous Forward Voltage (V) t - Pulse Duration (s)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance

Revision: 09-Mar-2021 3 Document Number: 89317


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSB420S-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMB (DO-214AA)
Cathode Band
Mounting Pad Layout

0.086 (2.20) 0.155 (3.94) 0.085 (2.159)


0.077 (1.95) 0.130 (3.30) MAX.

0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.096 (2.44) MIN.
0.084 (2.13)
0.220 (5.59 REF.

0.060 (1.52) 0.008 (0.2)


0.030 (0.76) 0 (0)
0.220 (5.59)
0.205 (5.21)

Revision: 09-Mar-2021 4 Document Number: 89317


For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer

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Revision: 01-Jan-2023 1 Document Number: 91000

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