vssb420s m3
vssb420s m3
vssb420s m3
www.vishay.com
Vishay General Semiconductor
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak
SMB (DO-214AA) of 260 °C
• Material categorization: for definitions of compliance
Cathode Anode please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
LINKS TO ADDITIONAL RESOURCES For use in high frequency converters, freewheeling diodes,
3D 3D DC/DC converters and polarity protection applications.
3D Models
MECHANICAL DATA
Case: SMB (DO-214AA)
PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating
IF(AV) 4.0 A Base P/N-M3 - halogen-free and RoHS-compliant,
VRRM 200 V commercial grade
IFSM 40 A Terminals: matte tin plated leads, solderable per
VF at IF = 4.0 A 0.71 V J-STD-002 and JESD 22-B102
TJ max. 150 °C M3 suffix meets JESD 201 class 2 whisker test
Package SMB (DO-214AA) Polarity: color band denotes the cathode end
Circuit configuration Single
Axis Title
5.0 10 10000
Average Forward Rectified Current (A)
3.5
0.1 1000
TJ = 150 °C
3.0 TJ = 125 °C
2nd line
TJ = 100 °C
1st line
2nd line
2.5 0.01
2.0
TJ = 25 °C
0.001 100
1.5
1.0
0.0001
0.5 TM Measured at Terminal
TJ = -40 °C
0 0.00001 10
0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100
TM - Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics
4 1000
D = 0.5 TJ = 25 °C
D = 0.8
3.5 D = 0.3 f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
D = 0.2
Average Power Loss (W)
3.0
2.5
D = 0.1 D = 1.0
2.0 100
1.5 T
1.0
0.5 D = tp/T tp
0 10
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 0.1 1 10 100
Average Forward Current (A) Reverse Voltage (V)
Axis Title
100 10000 1000
Junction to Ambient
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
TJ = 150 °C
10 1000 100
2nd line
1st line
2nd line
TJ = 125 °C TJ = 100 °C
1 100 10
TJ = 25 °C
TJ = -40 °C
0.1 10 1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100
Instantaneous Forward Voltage (V) t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance
SMB (DO-214AA)
Cathode Band
Mounting Pad Layout
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.096 (2.44) MIN.
0.084 (2.13)
0.220 (5.59 REF.
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