MURS320

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Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction Available

• Ideal for automated placement

• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
SMC (DO-214AB) • Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
Cathode Anode • AEC-Q101 qualified
• Material categorization: for definitions of compliance
LINKS TO ADDITIONAL RESOURCES please see www.vishay.com/doc?99912

3D 3D TYPICAL APPLICATIONS
3D Models
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A MECHANICAL DATA
VRRM 200 V
Case: SMC (DO-214AB)
IFSM 125 A Molding compound meets UL 94 V-0 flammability rating
trr 25 ns Base P/N-E3 - RoHS-compliant, commercial grade
VF 0.71 V Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
TJ max. 175 °C (“_X” denotes revision code e.g. A, B, .....)
Package SMC (DO-214AB) Terminals: matte tin plated leads, solderable per
Circuit configuration Single
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MURS320 UNIT
Device marking code MD
Maximum repetitive peak reverse voltage VRRM 200 V
Working peak reverse voltage VRWM 200 V
Maximum DC blocking voltage VDC 200 V
TL = 140 °C 3.0
Maximum average forward rectified current at: (fig. 1) IF(AV) A
TL = 130 °C 4.0
Peak forward surge current 8.3 ms single half sine-wave
IFSM 125 A
superimposed on rated load
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C

Revision: 08-Apr-2020 1 Document Number: 88689

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 MURS320
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Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL MURS320 UNIT
IF = 3.0 A 0.875
TJ = 25 °C
Maximum instantaneous forward voltage IF = 4.0 A VF (1) 0.890 V
IF = 3.0 A TJ = 150 °C 0.710
Maximum instantaneous reverse current TJ = 25 °C 5.0
IR (1) μA
at rated DC blocking voltage TJ = 150 °C 150
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 25 ns
IF = 1.0 A, dI/dt = 50 A/μs,
Maximum reverse recovery time trr 35 ns
VR = 30 V, Irr = 10 % IRM
IF = 1.0 A, dI/dt = 100 A/μs,
Maximum forward recovery time tfr 25 ns
recovery to 1.0 V
Note
(1) Pulse test: t = 300 μs, duty cycle ≤ 2 %
p

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MURS320 UNIT
Typical thermal resistance junction to lead RθJL 11 °C/W

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MURS320-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
MURS320-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
MURS320HE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
MURS320HE3_A/I (1) 0.211 I 3500 13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

Revision: 08-Apr-2020 2 Document Number: 88689

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 MURS320
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
1000 10000
8.0
Average Forward Rectified Current (A)

TJ = 175 °C

Instantaneous Reverse Current (µA)

100

6.0
10 TJ = 100 °C 1000

2nd line
1st line
2nd line
4.0 1
TJ = 25 °C

0.1 100
2.0
0.01
TJ = -40 °C

0 0.001 10
0 25 50 75 100 125 150 175 0 20 40 60 80 100
Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics

125 1000
TJ = 25 °C
f = 1.0 MHz
Peak Forward Surge Current (A)

Vsig = 50 mVp-p
Junction Capacitance (pF)

100

75

100

50

25

0 10
1 10 100 0.1 1 10 100
Number of Cycles at 60 Hz Reverse Voltage (V)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance

Axis Title
100 10000
Instantaneous Forward Current (A)

TJ = 175 °C

10
TJ = 100 °C 1000
2nd line

TJ = 25 °C
100
0.1
TJ = -40 °C

0.01 10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)

Fig. 3 - Typical Forward Voltage

Revision: 08-Apr-2020 3 Document Number: 88689

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 MURS320
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Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMC (DO-214AB)
Cathode Band
Mounting Pad Layout

0.185 (4.69) MAX.

0.126 (3.20) 0.246 (6.22)
0.114 (2.90) 0.220 (5.59)
0.126 (3.20) MIN.

0.280 (7.11)
0.260 (6.60) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.320 (8.13) REF.

0.103 (2.62)
0.079 (2.06)

0.060 (1.52) 0.008 (0.2)

0.030 (0.76) 0 (0)
0.320 (8.13)
0.305 (7.75)

Revision: 08-Apr-2020 4 Document Number: 88689

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2021 1 Document Number: 91000