Not for New Designs

BYV26DGP, BYV26EGP
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Vishay General Semiconductor
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
Superectifier ® • Cavity-free glass passivated pellet chip junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
DO-15 (DO-204AC) • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
For use in high frequency rectification and freewheeling
IF(AV) 1.0 A
application in switching mode converters and inverters for
VRRM 800 V, 1000 V consumer, computer and telecommunication.
IFSM 30 A
trr 75 ns
MECHANICAL DATA
VF at IF 1.3 V
Case: DO-15 (DO-204AC), molded epoxy over glass body
TJ max. 175 °C
Molding compound meets UL 94 V-0 flammability rating
Package DO-15 (DO-204AC) Base P/N-E3 - RoHS-compliant, commercial grade
Circuit configuration Single
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT
Maximum repetitive peak reverse voltage VRRM 800 1000 V
Maximum RMS voltage VRMS 560 700 V
Maximum DC blocking voltage VDC 800 1000 V
Maximum average forward rectified current 0.375" (9.5 mm)
IF(AV) 1.0 A
lead length (fig. 1)
Peak forward surge current 10 ms single half sine-wave
IFSM 30 A
superimposed on rated load
Non repetitive peak reverse energy ERSM (1) 10 mJ
Operating junction and storage temperature range TJ, TSTG -65 to +175 °C
Note
(1) Peak reverse energy measured at I = 400 mA, T = T max. on inductive load, t = 20 μs
R J J

Revision: 06-Oct-2021 1 Document Number: 88554

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Not for New Designs
BYV26DGP, BYV26EGP
www.vishay.com
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL BYV26DGP BYV26EGP UNIT
Minimum avalanche breakdown voltage 100 μA VBR 900 1100 V
TJ = 25 °C 2.5
Maximum instantaneous forward voltage 1.0 A VF V
TJ = 175 °C 1.3

Maximum DC reverse current at rated DC TA = 25 °C 5.0

IR μA
blocking voltage TA = 165 °C 150
IF = 0.5 A, IR = 1.0 A,
Max. reverse recovery time trr 75 ns
Irr = 0.25 A
Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BYV26DGP BYV26EGP UNIT
RθJA (1) 70
Typical thermal resistance °C/W
RθJL (2) 16
Notes
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYV26EGP-E3/54 0.428 54 4000 13" diameter paper tape and reel
BYV26EGP-E3/73 0.428 73 2000 Ammo pack packaging

Revision: 06-Oct-2021 2 Document Number: 88554

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Not for New Designs
BYV26DGP, BYV26EGP
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

1.2 100
TL = Lead Temperature
Average Forward Rectified Current (A)

Resistive or

Instantaneous Forward Current (A)

Inductive Load
1.0 Lead Mounted
TJ = 175 °C
on Heatsinks
10
0.8
TJ = 150 °C

0.6 1
Mounted on P.C.B. TJ = 125 °C
0.375" (9.5 mm) Lead Length on
0.4
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads 0.1
TJ = 25 °C
0.2
TA = Ambient Temperature
0 0.01
0 25 50 75 100 125 150 175 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
Temperature (°C) Instantaneous Forward Voltage (V)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Voltage Characteristics

1.8 100
D = 0.8 TJ = 175 °C
1.6 D = 0.5
Instantaneous Reverse Leakage

D = 0.3 TJ = 165 °C
10
Average Power Loss (W)

1.4
D = 0.2 D = 1.0 TJ = 125 °C
1.2
Current (μA)

D = 0.1 1
1.0

0.8
0.1
0.6 T
TJ = 25 °C
0.4 0.01
0.2 D = tp/T tp

0 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100
Average Forward Current (A) Percent of Peak Reverse Voltage (%)

Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Reverse Leakage Characteristics

100 100
TJ = TJ Max. TJ = 25 °C
10 ms Single Half Sine-Wave f = 1.0 MHz
Peak Forward Surge Current (A)

Vsig = 50 mVp-p
Junction Capacitance (pF)

10 10

1 1
1 10 100 0.1 1 10 100
Number of Cycles at 60 Hz Reverse Voltage (V)

Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 6 - Typical Junction Capacitance

Revision: 06-Oct-2021 3 Document Number: 88554

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Not for New Designs
BYV26DGP, BYV26EGP
www.vishay.com
Vishay General Semiconductor

100
Transient Thermal Impedance (°C/W)

10

Mounted on P.C.B.
0.375" (9.5 mm) Lead Length on
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
1
0.01 0.1 1 10 100
t - Pulse Duration (s)

Fig. 7 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-15 (DO-204AC)
0.034 (0.86)
0.028 (0.71)
DIA.

1.0 (25.4)
MIN.

0.300 (7.6)
0.230 (5.8)

0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.

Revision: 06-Oct-2021 4 Document Number: 88554

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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