VBT4045BP-E3

www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
TMBS ® • Trench MOS Schottky technology
D2PAK (TO-263AB) • Low forward voltage drop, low power losses
K • High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2 • Material categorization: for definitions of compliance
1 please see www.vishay.com/doc?99912

PIN 1 K
TYPICAL APPLICATIONS
PIN 2 HEATSINK
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA
Models
Available Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
PRIMARY CHARACTERISTICS
Terminals: Matte tin plated leads, solderable per
IF(AV) 40 A
J-STD-002 and JESD 22-B102
VRRM 45 V E3 suffix meets JESD 201 class 1A whisker test
IFSM 240 A
Polarity: As marked
VF at IF = 40 A 0.51 V
Mounting Torque: 10 in-lbs maximum
TOP max. (AC mode) 150 °C

TJ max. (DC forward current) 200 °C 
Package D2PAK (TO-263AB) 
Circuit configuration Single

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VBT4045BP UNIT
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum DC forward bypassing current (fig. 1) IF(DC) (1) 40 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 240 A
superimposed on rated load
Operating junction temperature range (AC mode) TOP -40 to +150 °C
Junction temperature in DC forward current without reverse bias, t  1 h TJ (1)  200 °C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test

Revision: 02-Jul-2018 1 Document Number: 89442

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
IF = 5 A 0.41 -
IF = 20 A TA = 25 °C 0.50 -
IF = 40 A 0.57 0.67
Instantaneous forward voltage VF (1) V
IF = 5 A 0.28 -
IF = 20 A TA = 125 °C 0.41 -
IF = 40 A 0.51 0.63
TA = 25 °C - 3000 μA
Reverse current VR = 45 A IR (2)
TA = 125 °C 29 85 mA
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VBT4045BP UNIT
Typical thermal resistance RJC 0.8 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VBT4045BP-E3/4W 1.37 4W 50/tube Tube
TO-263AB VBT4045BP-E3/8W 1.37 8W 800/reel Tape and reel

RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)

45 100
Instantaneous Forward Current (A)

40 TA = 150 °C
35
DC Forward Current (A)

30 TA = 125 °C
10 TA = 100 °C
25
20

15 TA = 25 °C
1
10

5 DC Forward Current at
Thermal Equilibrium
0 0.1
0 25 50 75 100 125 150 175 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Case Temperature (°C) Instantaneous Forward Voltage (V)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics

Revision: 02-Jul-2018 2 Document Number: 89442

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VBT4045BP-E3
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Vishay General Semiconductor

100 1
Instantaneous Reverse Current (mA)

Transient Thermal Impedance (°C/W)

TA = 150 °C
TA = 125 °C
10 TA = 100 °C

0.1
TA = 25 °C

0.01

0.001 0.1
20 40 60 80 100 0.01 0.1 1 10 100

Percent of Rated Peak reverse Voltage (%) t - Pulse Duration (s)

Fig. 3 - Typical Reverse Characteristics Fig. 5 - Typical Transient Thermal Impedance

100 000
TJ = 25 °C
f = 1.0 MHz
Junction Capacitance (pF)

Vstg = 50 mVp-p

10 000

1000

100
0.1 1 10 100

Reverse Voltage (V)

Fig. 4 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-263AB
0.411 (10.45) 0.190 (4.83) Mounting Pad Layout
0.380 (9.65) 0.160 (4.06) 0.055 (1.40)
0.245 (6.22) 0.045 (1.14) 0.42 (10.66) MIN.
MIN.
K

0.055 (1.40) 0.33 (8.38) MIN.

0.360 (9.14)
0.047 (1.19)
0.320 (8.13) 0.624 (15.85)
1 K 2 0.591 (15.00) 0.047 (1.2) REF.
0.670 (17.02)
0.130 (3.3) 0 to 0.01 (0 to 0.254)
REF. 0.591 (15.00)
0.110 (2.79)
0.037 (0.940) 0.090 (2.29)
0.021 (0.53) 0.15 (3.81) MIN.
0.027 (0.686)
0.014 (0.36)
0.105 (2.67)
0.140 (3.56) 0.08 (2.032) MIN.
0.095 (2.41)
0.205 (5.20) 0.110 (2.79)
0.195 (4.95) 0.105 (2.67)
0.095 (2.41)

Revision: 02-Jul-2018 3 Document Number: 89442

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2019 1 Document Number: 91000

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