1N5817,1N5818,1N5819,1N5820 series

General Semiconductor
Schottky Barrier Plastic Rectifier Metal Version
FEATURES
• Guardring for overvoltage protection
• Very small conduction losses
• Extremely fast switching/Pulse switch
• Low forward voltage drop for battery charging
• High frequency operation for complicated waveform

DO-41 (DO-204AL) • Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling,
PRIMARY CHARACTERISTICS DC/DC converters, and polarity protection applications, and
IF(AV) 1.0 A grading batteries .
VRRM 20 V, 30 V, 40 V
IFSM 25 A
MECHANICAL DATA Case: DO-41 (DO-204AL)
Molding compound meets UL 94 V-0 flammability rating
VF 0.45 V, 0.55 V, 0.60 V
Base P/N-E3 - RoHS-compliant, commercial grade
TJ max. 125 °C Terminals: matte tin plated leads, solderable per
Package DO-41 (DO-204AL) J-STD-002 and JESD 22-B102
Circuit configuration Single E3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes the cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N5817 1N5818/20 1N5819 UNIT
Maximum repetitive peak reverse voltage VRRM 20 30 40 V
Maximum RMS voltage VRMS 14 21 28 V
Maximum DC blocking voltage VDC 20 30 40 V
Maximum non-repetitive peak reverse voltage VRSM 24 36 48 V
Maximum average forward rectified current
IF(AV) 1.0 A
at 0.375" (9.5 mm) lead length at TL = 90 °C
Peak forward surge current, 8.3 ms single half
IFSM 25 A
sine-wave superimposed on rated load
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -65 to +125 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL 1N5817 1N5818 1N5819 UNIT
Maximum instantaneous forward voltage 1.0 VF (1) 0.450 0.550 0.600 V
Maximum instantaneous forward voltage 3.1 VF (1) 0.750 0.875 0.900 V
Maximum average reverse current TA = 25 °C 1.0
IR (1) mA
at rated DC blocking voltage TA = 100 °C 10
Typical junction capacitance 4.0 V, 1.0 MHz CJ 125 110 pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

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THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT
RJA (1) 50
Typical thermal resistance °C/W
RJL (1) 15
Note
(1) Thermal resistance from junction to lead vertical PCB mounted, 0.375" (9.5 mm) lead length with 1.5" x 1.5" (38 mm x 38 mm) copper pads

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5819-E3/54 0.332 54 5500 13" diameter paper tape and reel
1N5819-E3/73 0.332 73 3000 Ammo pack packaging

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

1.0 100
Instantaneous Forward Current (A)
Average Forward Current (A)

TJ = 125 °C
0.75 10 Pulse Width = 300 μs
Resistive or Inductive Load 1 % Duty Cycle
0.375" (9.5 mm) Lead Length

0.5 1 TJ = 25 °C

0.25 0.1

0 0.01
0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Case Temperature (°C) Instantaneous Forward Voltage (V)

Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics

30 100
Instantaneous Reverse Current (mA)
Peak Forward Surge Current (A)

25
10

20 TJ = 125 °C
1

15

0.1 TJ = 75 °C
10

0.01
5
TJ = 25 °C

0 0.001
1 10 100 0 20 40 60 80 100
Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics

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1000 100

Transient Thermal Impedance (°C/W)

TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)

10

100

1N5817
10 0.1
0.1 1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t - Pulse Duration (s)

Fig. 5 - Typical Junction Capacitance Fig. 7 - Typical Transient Thermal Impedance

1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)

100

1N5818, 1N5819
10
0.1 1 10 100
Reverse Voltage (V)

Fig. 6 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-41 (DO-204AL)

1.0 (25.4)
MIN.

0.107 (2.7)
0.080 (2.0)
DIA.

0.205 (5.2)
0.160 (4.1)

1.0 (25.4)
MIN.

0.034 (0.86)
0.028 (0.71)
DIA.

Revision: 01-Jul-2020
Document Number: 88525 For technical questions3within your region: DiodesAmericas@Gen.com, DiodesAsia@Gen.com,
DiodesEurope@Gen.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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