New Product

U3B, U3C & U3D

Vishay General Semiconductor

Surface Mount Ultrafast Plastic Rectifier

FEATURES
• Oxide planar chip junction
• Ultrafast recovery time
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
DO-214AB (SMC)
and WEEE 2002/96/EC

TYPICAL APPLICATIONS
For us in high frequency rectification and freewheeling
application in switching mode converters and
inverters for consumer, computer, automotive and
PRIMARY CHARACTERISTICS telecommunication.
IF(AV) 3.0 A
VRRM 100 V, 150 V, 200 V MECHANICAL DATA
IFSM 100 A Case: DO-214AB (SMC)
trr 20 ns Epoxy meets UL 94V-0 flammability rating
VF at IF = 3.0 A 0.74 V Terminals: Matte tin plated leads, solderable per
TJ max. 150 °C J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL U3B U3C U3D UNIT
Device marking code U3B U3C U3D
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Maximum average forward rectified current TM = 134 °C 2.0 (1)
IF(AV) A
(Fig. 1) TM = 125 °C 3.0 (2)
Peak forward surge current 8.3 ms single half sine-wave
IFSM 100 A
superimposed on rated load
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
Notes:
(1) Free air, mounted on recommende copper pad area
(2) Units mounted on P.C.B. with 0.47 x 0.47" (12 x 12 mm) copper pad areas.

Document Number: 89066 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 1
 New Product
U3B, U3C & U3D
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
TA = 25 °C 0.85 0.90
Instantaneous forward voltage (1) IF = 3.0 A VF V
TA = 100 °C 0.74 0.83
TA = 25 °C - 10
Reverse current (2) rated VR IR µA
TA = 100 °C 250 500
IF = 0.5 A, IR = 1.0 A,
TA = 25 °C trr - 20 ns
Irr = 0.25 A
Reverse recovery time
IF = 3.0 A, dI/dt = 50 A/µs, TA = 25 °C 25 30
trr ns
VR = 30 V, Irr = 0.1 IRM TA = 100 °C 35 50
IF = 3.0 A, dI/dt = 50 A/µs, TA = 25 °C 9 15
Storage charge Qrr nC
VR = 30 V, Irr = 0.1 IRM TA = 100 °C 22 35
Typical junction capacitance 4.0 V, 1 MHz CJ 25 - pF

Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL U3B U3C U3D UNIT
RθJA 92
Typical thermal resistance (1) °C/W
RθJM 10
Note:
(1) Free air, mounted on recommended copper pad area. Thermal resistance RθJA - junction to ambient, RθJM - junction to mount

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
U3D-E3/57T 0.239 57T 850 7" diameter plastic tape and reel
U3D-E3/9AT 0.239 9AT 3500 13" diameter plastic tape and reel

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

3.0 3.0
Average Forward Rectified Current (A)

D = 0.8
D = 0.5
2.5 D = 0.3
Average Power Loss (W)

D = 0.2
D = 1.0
2.0 2.0
D = 0.1

1.5

T
1.0 1.0

0.5
D = tp/T tp

0 0
80 90 100 110 120 130 140 150 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
TM - Mount Temperature (°C) Average Forward Current (A)

Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89066
2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Revision: 30-May-08
 New Product
U3B, U3C & U3D
Vishay General Semiconductor

100 100
TJ = 25 °C
Instantaneous Forward Current (A)

f = 1.0 MHz
TA = 150 °C Vstg = 50 mVp-p

Junction Capactiance (pF)

10

TA = 125 °C

1 TA = 100 °C

TA = 25 °C
0.1

0.01 10
0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance

10 000 100

Transient Thermal Impedance (°C/W)

TA = 150 °C Junction to Ambient
Instantaneous Reverse Leakage

1000 TA = 125 °C

TA = 100 °C
10
Current (µA)

100

10
TA = 25 °C 1

0.1 1
10 20 30 40 50 60 70 80 90 100 0.001 0.01 0.1 1 10 100
Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s)

Figure 4. Typical Reverse Leakage Characteristics Figure 6. Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-214AB (SMC)
Cathode Band
Mounting Pad Layout

0.185 (4.69) MAX.

0.126 (3.20) 0.246 (6.22)
0.114 (2.90) 0.220 (5.59)
0.126 (3.20) MIN.

0.280 (7.11)
0.260 (6.60) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.320 REF.

0.103 (2.62)
0.079 (2.06)

0.060 (1.52) 0.008 (0.2)

0.030 (0.76) 0 (0)
0.320 (8.13)
0.305 (7.75)

Document Number: 89066 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 30-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 3
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Vishay

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All product specifications and data are subject to change without notice.

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Document Number: 91000 www.vishay.com

Revision: 18-Jul-08 1